BE641090A - - Google Patents

Info

Publication number
BE641090A
BE641090A BE641090A BE641090A BE641090A BE 641090 A BE641090 A BE 641090A BE 641090 A BE641090 A BE 641090A BE 641090 A BE641090 A BE 641090A BE 641090 A BE641090 A BE 641090A
Authority
BE
Belgium
Application number
BE641090A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE641090A publication Critical patent/BE641090A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906Special atmosphere other than vacuum or inert
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1068Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE641090A 1962-12-12 1963-12-11 BE641090A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0082820 1962-12-12

Publications (1)

Publication Number Publication Date
BE641090A true BE641090A (en:Method) 1964-06-11

Family

ID=7510626

Family Applications (1)

Application Number Title Priority Date Filing Date
BE641090A BE641090A (en:Method) 1962-12-12 1963-12-11

Country Status (6)

Country Link
US (1) US3351433A (en:Method)
JP (1) JPS5021431B1 (en:Method)
BE (1) BE641090A (en:Method)
CH (1) CH420072A (en:Method)
DE (1) DE1444530B2 (en:Method)
GB (1) GB1029804A (en:Method)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519902C3 (de) * 1966-09-24 1975-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
GB1179545A (en) * 1968-01-16 1970-01-28 Siemens Ag Apparatus for Melting a Rod of Crystalline Material Zone-by-Zone
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
JPS535867B2 (en:Method) * 1973-03-08 1978-03-02
US3996094A (en) * 1975-01-02 1976-12-07 Motorola, Inc. Silicon manufacture
US3977934A (en) * 1975-01-02 1976-08-31 Motorola, Inc. Silicon manufacture
GB1475261A (en) * 1975-04-02 1977-06-01 Nat Res Dev Siliceous materials
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
EP0504929B1 (en) * 1991-03-22 1996-08-28 Shin-Etsu Handotai Company Limited Method of growing silicon monocrystalline rod
RU182737U1 (ru) * 2016-12-29 2018-08-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) Устройство для получения высокочистого монокристалла зонной плавкой

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB775817A (en) * 1954-03-09 1957-05-29 Siemens Ag Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal
FR1235341A (fr) * 1958-03-05 1960-07-08 Siemens Ag Procédé et appareil de fabrication continue de tiges mono-cristallines minces
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
NL251304A (en:Method) * 1959-05-08
NL108958C (en:Method) * 1959-05-29
GB911360A (en) * 1959-10-16 1962-11-28 Westinghouse Electric Corp Process for growing crystals
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
SE347579B (en:Method) * 1970-11-27 1972-08-07 Aga Ab

Also Published As

Publication number Publication date
JPS5021431B1 (en:Method) 1975-07-23
GB1029804A (en) 1966-05-18
US3351433A (en) 1967-11-07
CH420072A (de) 1966-09-15
DE1444530A1 (de) 1969-04-24
DE1444530B2 (de) 1970-10-01

Similar Documents

Publication Publication Date Title
JPS5021431B1 (en:Method)
BE614432A (en:Method)
BE615244A (en:Method)
BE615962A (en:Method)
BE618679A (en:Method)
BE620202A (en:Method)
BE620613A (en:Method)
BE621994A (en:Method)
BE622536A (en:Method)
BE623435A (en:Method)
BE624858A (en:Method)
BE625273A (en:Method)
BE625824A (en:Method)
BE625835A (en:Method)
BE626185A (en:Method)
BE626188A (en:Method)
BE626588A (en:Method)
BE626815A (en:Method)
BE626897A (en:Method)
BE626966A (en:Method)
BE626982A (en:Method)
BE627066A (en:Method)
BE627123A (en:Method)
BE627165A (en:Method)
BE627234A (en:Method)