BE639365A - - Google Patents

Info

Publication number
BE639365A
BE639365A BE639365DA BE639365A BE 639365 A BE639365 A BE 639365A BE 639365D A BE639365D A BE 639365DA BE 639365 A BE639365 A BE 639365A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE639365A publication Critical patent/BE639365A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
BE639365D 1962-10-30 BE639365A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US234150A US3248670A (en) 1962-10-30 1962-10-30 Semiconductor laser with optical cavity

Publications (1)

Publication Number Publication Date
BE639365A true BE639365A (de)

Family

ID=22880157

Family Applications (1)

Application Number Title Priority Date Filing Date
BE639365D BE639365A (de) 1962-10-30

Country Status (6)

Country Link
US (1) US3248670A (de)
BE (1) BE639365A (de)
CH (1) CH414029A (de)
DE (1) DE1464711C3 (de)
GB (1) GB995950A (de)
NL (1) NL299208A (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser
US3330991A (en) * 1963-07-12 1967-07-11 Raytheon Co Non-thermionic electron emission devices
US3359509A (en) * 1964-02-19 1967-12-19 Gen Electric Semiconductive junction laser with temperature compensation
US3300671A (en) * 1964-03-10 1967-01-24 Gen Electric Surface-adjacent junction electroluminescent device
US3531735A (en) * 1966-06-28 1970-09-29 Gen Electric Semiconductor laser having grooves to prevent radiation transverse to the optical axis
US3701047A (en) * 1966-08-16 1972-10-24 Rca Corp Semiconductor laser devices utilizing light reflective metallic layers
US3522388A (en) * 1966-11-30 1970-07-28 Norton Research Corp Electroluminescent diode light source having a permanent implanted opaque surface layer mask
US3522389A (en) * 1966-12-06 1970-07-28 Norton Research Corp Masked film recording electroluminescent diode light source having a transparent filled mask aperture
US3526851A (en) * 1967-07-10 1970-09-01 Rca Corp Filamentary structure injection laser having a very narrow active junction
DE1614846B2 (de) * 1967-07-26 1976-09-23 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Halbleiterdiodenanordnung
US3824493A (en) * 1972-09-05 1974-07-16 Bell Telephone Labor Inc Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
NL7312139A (de) * 1972-09-08 1974-03-12
GB2175176A (en) * 1985-05-10 1986-11-19 Philips Electronic And Assaoci Signal transmission arrangement, a transmitter and a receiver for such an arrangement and a communication system including such an arrangement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
NL251064A (de) * 1955-11-04
US3039362A (en) * 1958-05-09 1962-06-19 Ca Nat Research Council Narrow band interference filter
US3102201A (en) * 1958-12-15 1963-08-27 Rca Corp Semiconductor device for generating modulated radiation
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser
NL128040C (de) * 1960-10-07

Also Published As

Publication number Publication date
DE1464711B2 (de) 1973-08-23
NL299208A (de)
DE1464711A1 (de) 1969-05-14
GB995950A (en) 1965-06-23
US3248670A (en) 1966-04-26
CH414029A (de) 1966-05-31
DE1464711C3 (de) 1974-03-28

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