BE638992A - - Google Patents

Info

Publication number
BE638992A
BE638992A BE638992DA BE638992A BE 638992 A BE638992 A BE 638992A BE 638992D A BE638992D A BE 638992DA BE 638992 A BE638992 A BE 638992A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE638992A publication Critical patent/BE638992A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
BE638992D 1962-10-23 1963-10-22 BE638992A (pm)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23251162A 1962-10-23 1962-10-23
US279788A US3271636A (en) 1962-10-23 1963-05-13 Gallium arsenide semiconductor diode and method

Publications (1)

Publication Number Publication Date
BE638992A true BE638992A (pm) 1964-02-17

Family

ID=26926066

Family Applications (1)

Application Number Title Priority Date Filing Date
BE638992D BE638992A (pm) 1962-10-23 1963-10-22

Country Status (6)

Country Link
US (1) US3271636A (pm)
BE (1) BE638992A (pm)
DE (1) DE1439952A1 (pm)
FR (1) FR1372252A (pm)
GB (1) GB1057817A (pm)
NL (1) NL299561A (pm)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1030670A (en) * 1964-12-02 1966-05-25 Standard Telephones Cables Ltd Semiconductor devices
FR1489613A (pm) * 1965-08-19 1967-11-13
US3457473A (en) * 1965-11-10 1969-07-22 Nippon Electric Co Semiconductor device with schottky barrier formed on (100) plane of gaas
US3476984A (en) * 1966-11-10 1969-11-04 Solitron Devices Schottky barrier semiconductor device
US3523223A (en) * 1967-11-01 1970-08-04 Texas Instruments Inc Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
US3562606A (en) * 1969-08-13 1971-02-09 Varian Associates Subsurface gallium arsenide schottky-type diode and method of fabricating same
US3656030A (en) * 1970-09-11 1972-04-11 Rca Corp Semiconductor device with plurality of small area contacts
EP1950326A1 (en) 2007-01-29 2008-07-30 Interuniversitair Microelektronica Centrum Method for removal of bulk metal contamination from III-V semiconductor substrates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL235742A (pm) * 1958-02-03 1900-01-01
US3160539A (en) * 1958-09-08 1964-12-08 Trw Semiconductors Inc Surface treatment of silicon
DE1071846B (pm) * 1959-01-03 1959-12-24
US3015048A (en) * 1959-05-22 1961-12-26 Fairchild Camera Instr Co Negative resistance transistor
NL265436A (pm) * 1960-01-20
US3154450A (en) * 1960-01-27 1964-10-27 Bendix Corp Method of making mesas for diodes by etching
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device

Also Published As

Publication number Publication date
DE1439952A1 (de) 1969-01-16
FR1372252A (fr) 1964-09-11
US3271636A (en) 1966-09-06
GB1057817A (en) 1967-02-08
NL299561A (pm) 1965-08-25

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