BE622805A - - Google Patents

Info

Publication number
BE622805A
BE622805A BE622805DA BE622805A BE 622805 A BE622805 A BE 622805A BE 622805D A BE622805D A BE 622805DA BE 622805 A BE622805 A BE 622805A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE622805A publication Critical patent/BE622805A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/308Semiconductor cathodes, e.g. cathodes with PN junction layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/142Semiconductor-metal-semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
BE622805D 1961-09-25 BE622805A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US140533A US3121809A (en) 1961-09-25 1961-09-25 Semiconductor device utilizing majority carriers with thin metal base between semiconductor materials

Publications (1)

Publication Number Publication Date
BE622805A true BE622805A (pt)

Family

ID=22491688

Family Applications (1)

Application Number Title Priority Date Filing Date
BE622805D BE622805A (pt) 1961-09-25

Country Status (3)

Country Link
US (1) US3121809A (pt)
BE (1) BE622805A (pt)
NL (1) NL283434A (pt)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068724A (en) * 1994-05-06 2000-05-30 Otor Machine and method for manufacture of a sheet of single-face corrugated board by gluing under tension

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE603293A (pt) * 1960-05-02
US3275844A (en) * 1962-11-16 1966-09-27 Burroughs Corp Active thin film quantum mechanical tunneling apparatus
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3321711A (en) * 1963-12-12 1967-05-23 Westinghouse Electric Corp Space charge limited conduction solid state electron device
US3337375A (en) * 1964-04-13 1967-08-22 Sprague Electric Co Semiconductor method and device
US3375418A (en) * 1964-09-15 1968-03-26 Sprague Electric Co S-m-s device with partial semiconducting layers
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor
US3334248A (en) * 1965-02-02 1967-08-01 Texas Instruments Inc Space charge barrier hot electron cathode
US3394289A (en) * 1965-05-26 1968-07-23 Sprague Electric Co Small junction area s-m-s transistor
US3401449A (en) * 1965-10-24 1968-09-17 Texas Instruments Inc Method of fabricating a metal base transistor
US3457473A (en) * 1965-11-10 1969-07-22 Nippon Electric Co Semiconductor device with schottky barrier formed on (100) plane of gaas
DE1283978B (de) * 1965-12-08 1968-11-28 Telefunken Patent Elektronisches Festkoerperbauelement mit durch Ladungstraegerinjektion steuerbarem elektrischem Widerstand
US3508125A (en) * 1966-01-06 1970-04-21 Texas Instruments Inc Microwave mixer diode comprising a schottky barrier junction
US3614560A (en) * 1969-12-30 1971-10-19 Ibm Improved surface barrier transistor
US3699404A (en) * 1971-02-24 1972-10-17 Rca Corp Negative effective electron affinity emitters with drift fields using deep acceptor doping
US3808477A (en) * 1971-12-17 1974-04-30 Gen Electric Cold cathode structure
GB2056166B (en) * 1979-08-08 1983-09-14 Philips Electronic Associated Hot-electron or hot-hole transistor
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4771321A (en) * 1984-08-29 1988-09-13 Varian Associates, Inc. High conductance ohmic junction for monolithic semiconductor devices
FR2793602B1 (fr) 1999-05-12 2001-08-03 Univ Claude Bernard Lyon Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif
US6806630B2 (en) * 2002-01-09 2004-10-19 Hewlett-Packard Development Company, L.P. Electron emitter device for data storage applications and method of manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1877140A (en) * 1928-12-08 1932-09-13 Lilienfeld Julius Edgar Amplifier for electric currents
US2720573A (en) * 1951-06-27 1955-10-11 Dick O R Lundqvist Thermistor disks
US2836776A (en) * 1955-05-07 1958-05-27 Nippon Electric Co Capacitor
US3011075A (en) * 1958-08-29 1961-11-28 Developments Ltd Comp Non-linear resistance devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068724A (en) * 1994-05-06 2000-05-30 Otor Machine and method for manufacture of a sheet of single-face corrugated board by gluing under tension

Also Published As

Publication number Publication date
NL283434A (pt)
US3121809A (en) 1964-02-18

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