BE622805A - - Google Patents
Info
- Publication number
- BE622805A BE622805A BE622805DA BE622805A BE 622805 A BE622805 A BE 622805A BE 622805D A BE622805D A BE 622805DA BE 622805 A BE622805 A BE 622805A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/142—Semiconductor-metal-semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US140533A US3121809A (en) | 1961-09-25 | 1961-09-25 | Semiconductor device utilizing majority carriers with thin metal base between semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
BE622805A true BE622805A (no) |
Family
ID=22491688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE622805D BE622805A (no) | 1961-09-25 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3121809A (no) |
BE (1) | BE622805A (no) |
NL (1) | NL283434A (no) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068724A (en) * | 1994-05-06 | 2000-05-30 | Otor | Machine and method for manufacture of a sheet of single-face corrugated board by gluing under tension |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE603293A (no) * | 1960-05-02 | |||
US3275844A (en) * | 1962-11-16 | 1966-09-27 | Burroughs Corp | Active thin film quantum mechanical tunneling apparatus |
US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
US3321711A (en) * | 1963-12-12 | 1967-05-23 | Westinghouse Electric Corp | Space charge limited conduction solid state electron device |
US3337375A (en) * | 1964-04-13 | 1967-08-22 | Sprague Electric Co | Semiconductor method and device |
US3375418A (en) * | 1964-09-15 | 1968-03-26 | Sprague Electric Co | S-m-s device with partial semiconducting layers |
DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
US3334248A (en) * | 1965-02-02 | 1967-08-01 | Texas Instruments Inc | Space charge barrier hot electron cathode |
US3394289A (en) * | 1965-05-26 | 1968-07-23 | Sprague Electric Co | Small junction area s-m-s transistor |
US3401449A (en) * | 1965-10-24 | 1968-09-17 | Texas Instruments Inc | Method of fabricating a metal base transistor |
US3457473A (en) * | 1965-11-10 | 1969-07-22 | Nippon Electric Co | Semiconductor device with schottky barrier formed on (100) plane of gaas |
DE1283978B (de) * | 1965-12-08 | 1968-11-28 | Telefunken Patent | Elektronisches Festkoerperbauelement mit durch Ladungstraegerinjektion steuerbarem elektrischem Widerstand |
US3508125A (en) * | 1966-01-06 | 1970-04-21 | Texas Instruments Inc | Microwave mixer diode comprising a schottky barrier junction |
US3614560A (en) * | 1969-12-30 | 1971-10-19 | Ibm | Improved surface barrier transistor |
US3699404A (en) * | 1971-02-24 | 1972-10-17 | Rca Corp | Negative effective electron affinity emitters with drift fields using deep acceptor doping |
US3808477A (en) * | 1971-12-17 | 1974-04-30 | Gen Electric | Cold cathode structure |
GB2056166B (en) * | 1979-08-08 | 1983-09-14 | Philips Electronic Associated | Hot-electron or hot-hole transistor |
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
US4771321A (en) * | 1984-08-29 | 1988-09-13 | Varian Associates, Inc. | High conductance ohmic junction for monolithic semiconductor devices |
FR2793602B1 (fr) | 1999-05-12 | 2001-08-03 | Univ Claude Bernard Lyon | Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif |
US6806630B2 (en) * | 2002-01-09 | 2004-10-19 | Hewlett-Packard Development Company, L.P. | Electron emitter device for data storage applications and method of manufacture |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1877140A (en) * | 1928-12-08 | 1932-09-13 | Lilienfeld Julius Edgar | Amplifier for electric currents |
US2720573A (en) * | 1951-06-27 | 1955-10-11 | Dick O R Lundqvist | Thermistor disks |
US2836776A (en) * | 1955-05-07 | 1958-05-27 | Nippon Electric Co | Capacitor |
US3011075A (en) * | 1958-08-29 | 1961-11-28 | Developments Ltd Comp | Non-linear resistance devices |
-
0
- BE BE622805D patent/BE622805A/xx unknown
- NL NL283434D patent/NL283434A/xx unknown
-
1961
- 1961-09-25 US US140533A patent/US3121809A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068724A (en) * | 1994-05-06 | 2000-05-30 | Otor | Machine and method for manufacture of a sheet of single-face corrugated board by gluing under tension |
Also Published As
Publication number | Publication date |
---|---|
US3121809A (en) | 1964-02-18 |
NL283434A (no) |