BE621486A - - Google Patents
Info
- Publication number
- BE621486A BE621486A BE621486DA BE621486A BE 621486 A BE621486 A BE 621486A BE 621486D A BE621486D A BE 621486DA BE 621486 A BE621486 A BE 621486A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
- H01L21/31675—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES75370A DE1184423B (de) | 1961-08-19 | 1961-08-19 | Verfahren zum Herstellen einer Schutzschicht auf einem Halbleiterbauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
BE621486A true BE621486A (nl) |
Family
ID=7505314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE621486D BE621486A (nl) | 1961-08-19 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3264201A (nl) |
BE (1) | BE621486A (nl) |
DE (1) | DE1184423B (nl) |
GB (1) | GB1000264A (nl) |
NL (1) | NL280871A (nl) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH422166A (de) * | 1965-04-27 | 1966-10-15 | Bbc Brown Boveri & Cie | Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht |
US3844904A (en) * | 1973-03-19 | 1974-10-29 | Bell Telephone Labor Inc | Anodic oxidation of gallium phosphide |
GB1536177A (en) * | 1976-12-07 | 1978-12-20 | Nat Res Dev | Anodising a compound semiconductor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1815768A (en) * | 1930-12-09 | 1931-07-21 | Aerovox Wireless Corp | Electrolyte |
DE655700C (de) * | 1935-01-08 | 1938-01-21 | Max Schenk Dr | Verfahren zur Herstellung opaker, emailaehnlicher Schutzschichten auf Aluminium und dessen Legierungen |
NL144803C (nl) * | 1948-02-26 | |||
US2739110A (en) * | 1951-10-27 | 1956-03-20 | Gen Electric | Method of forming oxide films on electrodes for electrolytic capacitors |
DE1031893B (de) * | 1952-08-01 | 1958-06-12 | Standard Elektrik Ag | Verfahren zur aeusseren Formgebung von Halbleiteranordnungen, insbesondere fuer Gleichrichter- und Verstaerkerzwecke mit Halbleitern aus Germanium oder Silizium |
US2785116A (en) * | 1954-01-25 | 1957-03-12 | Gen Electric | Method of making capacitor electrodes |
DE1040134B (de) * | 1956-10-25 | 1958-10-02 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen mit Halbleiterkoerpern mit p-n-UEbergang |
GB895695A (en) * | 1958-07-15 | 1962-05-09 | Scient Res I Ltd | A method of forming an anodic film on metallic titanium |
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0
- NL NL280871D patent/NL280871A/xx unknown
- BE BE621486D patent/BE621486A/xx unknown
-
1961
- 1961-08-19 DE DES75370A patent/DE1184423B/de active Pending
-
1962
- 1962-08-15 US US217011A patent/US3264201A/en not_active Expired - Lifetime
- 1962-08-17 GB GB31760/62A patent/GB1000264A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1000264A (en) | 1965-08-04 |
NL280871A (nl) | |
DE1184423B (de) | 1964-12-31 |
US3264201A (en) | 1966-08-02 |