BE614728A - Technique d'attaque. - Google Patents

Technique d'attaque.

Info

Publication number
BE614728A
BE614728A BE614728A BE614728A BE614728A BE 614728 A BE614728 A BE 614728A BE 614728 A BE614728 A BE 614728A BE 614728 A BE614728 A BE 614728A BE 614728 A BE614728 A BE 614728A
Authority
BE
Belgium
Prior art keywords
attack technique
attack
technique
Prior art date
Application number
BE614728A
Other languages
English (en)
Inventor
Joseph Raymond Ligenza
Herbert Meyer Shapiro
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE614728A publication Critical patent/BE614728A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
BE614728A 1961-03-07 1962-03-06 Technique d'attaque. BE614728A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94056A US3122463A (en) 1961-03-07 1961-03-07 Etching technique for fabricating semiconductor or ceramic devices

Publications (1)

Publication Number Publication Date
BE614728A true BE614728A (fr) 1962-07-02

Family

ID=22242591

Family Applications (1)

Application Number Title Priority Date Filing Date
BE614728A BE614728A (fr) 1961-03-07 1962-03-06 Technique d'attaque.

Country Status (2)

Country Link
US (1) US3122463A (fr)
BE (1) BE614728A (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3361597A (en) * 1963-12-20 1968-01-02 Bell Telephone Labor Inc Method of forming a photodiode
US3272670A (en) * 1965-08-27 1966-09-13 Stanford Research Inst Two-stable, high-resolution electronactuated resists
BE687248A (fr) * 1966-09-22 1967-03-22
US3663224A (en) * 1966-11-03 1972-05-16 Teeg Research Inc Electrical components, electrical circuits, and the like, and methods for making the same by means of radiation sensitive elements
US3637378A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Radiation-sensitive element, provided with flexible base and methods for exposing and processing the same
US3637383A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Radiation-sensitive elements and etch processes using the same
US3637377A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Method for making a pattern on a support member by means of actinic radiation sensitive element
US3520685A (en) * 1967-05-29 1970-07-14 Gen Electric Etching silicon dioxide by direct photolysis
US3520686A (en) * 1967-05-29 1970-07-14 Gen Electric Indirect photolytic etching of silicon dioxide
US3471291A (en) * 1967-05-29 1969-10-07 Gen Electric Protective plating of oxide-free silicon surfaces
US3494768A (en) * 1967-05-29 1970-02-10 Gen Electric Condensed vapor phase photoetching of surfaces
US3489564A (en) * 1967-05-29 1970-01-13 Gen Electric Photolytic etching of silicon dioxide
US3520684A (en) * 1967-05-29 1970-07-14 Gen Electric Photolytic etching of silicon dioxide by acidified organic fluorides
US3520687A (en) * 1967-05-29 1970-07-14 Gen Electric Etching of silicon dioxide by photosensitive solutions
US3637379A (en) * 1967-06-20 1972-01-25 Teeg Research Inc Method for making a relief pattern by means of electromagnetic radiation and heat-sensitive elements
US3637380A (en) * 1967-06-26 1972-01-25 Teeg Research Inc Methods for electrochemically making metallic patterns by means of radiation-sensitive elements
US3650743A (en) * 1967-10-06 1972-03-21 Teeg Research Inc Methods for making lithographic offset plates by means of electromagnetic radiation sensitive elements
US3658616A (en) * 1968-03-01 1972-04-25 Polacoat Inc Method of making light polarizing patterns
US3761327A (en) * 1971-03-19 1973-09-25 Itt Planar silicon gate mos process
US4243865A (en) * 1976-05-14 1981-01-06 Data General Corporation Process for treating material in plasma environment
US4226666A (en) * 1978-08-21 1980-10-07 International Business Machines Corporation Etching method employing radiation and noble gas halide
US4190488A (en) * 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
US4454004A (en) * 1983-02-28 1984-06-12 Hewlett-Packard Company Utilizing controlled illumination for creating or removing a conductive layer from a SiO2 insulator over a PN junction bearing semiconductor
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
US4612085A (en) * 1985-04-10 1986-09-16 Texas Instruments Incorporated Photochemical patterning
GB8806800D0 (en) * 1988-03-22 1988-04-20 British Telecomm Etching methods
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US20050014383A1 (en) * 2003-07-15 2005-01-20 Bing Ji Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
US9090499B2 (en) * 2013-03-10 2015-07-28 Qualcomm Incorporated Method and apparatus for light induced etching of glass substrates in the fabrication of electronic circuits

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL34436C (fr) * 1945-04-20
US2445238A (en) * 1946-10-08 1948-07-13 Rca Corp Production of skeletonized low reflectance glass surface with fluosilicic acid vapor
US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
US2992586A (en) * 1958-03-05 1961-07-18 American Optical Corp Multiple path light-conducting devices and method and apparatus for making same

Also Published As

Publication number Publication date
US3122463A (en) 1964-02-25

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