BE614728A - Technique d'attaque. - Google Patents
Technique d'attaque.Info
- Publication number
- BE614728A BE614728A BE614728A BE614728A BE614728A BE 614728 A BE614728 A BE 614728A BE 614728 A BE614728 A BE 614728A BE 614728 A BE614728 A BE 614728A BE 614728 A BE614728 A BE 614728A
- Authority
- BE
- Belgium
- Prior art keywords
- attack technique
- attack
- technique
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94056A US3122463A (en) | 1961-03-07 | 1961-03-07 | Etching technique for fabricating semiconductor or ceramic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BE614728A true BE614728A (fr) | 1962-07-02 |
Family
ID=22242591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE614728A BE614728A (fr) | 1961-03-07 | 1962-03-06 | Technique d'attaque. |
Country Status (2)
Country | Link |
---|---|
US (1) | US3122463A (fr) |
BE (1) | BE614728A (fr) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3361597A (en) * | 1963-12-20 | 1968-01-02 | Bell Telephone Labor Inc | Method of forming a photodiode |
US3272670A (en) * | 1965-08-27 | 1966-09-13 | Stanford Research Inst | Two-stable, high-resolution electronactuated resists |
BE687248A (fr) * | 1966-09-22 | 1967-03-22 | ||
US3637377A (en) * | 1966-11-03 | 1972-01-25 | Teeg Research Inc | Method for making a pattern on a support member by means of actinic radiation sensitive element |
US3637378A (en) * | 1966-11-03 | 1972-01-25 | Teeg Research Inc | Radiation-sensitive element, provided with flexible base and methods for exposing and processing the same |
US3663224A (en) * | 1966-11-03 | 1972-05-16 | Teeg Research Inc | Electrical components, electrical circuits, and the like, and methods for making the same by means of radiation sensitive elements |
US3637383A (en) * | 1966-11-03 | 1972-01-25 | Teeg Research Inc | Radiation-sensitive elements and etch processes using the same |
US3471291A (en) * | 1967-05-29 | 1969-10-07 | Gen Electric | Protective plating of oxide-free silicon surfaces |
US3520686A (en) * | 1967-05-29 | 1970-07-14 | Gen Electric | Indirect photolytic etching of silicon dioxide |
US3489564A (en) * | 1967-05-29 | 1970-01-13 | Gen Electric | Photolytic etching of silicon dioxide |
US3520685A (en) * | 1967-05-29 | 1970-07-14 | Gen Electric | Etching silicon dioxide by direct photolysis |
US3520684A (en) * | 1967-05-29 | 1970-07-14 | Gen Electric | Photolytic etching of silicon dioxide by acidified organic fluorides |
US3494768A (en) * | 1967-05-29 | 1970-02-10 | Gen Electric | Condensed vapor phase photoetching of surfaces |
US3520687A (en) * | 1967-05-29 | 1970-07-14 | Gen Electric | Etching of silicon dioxide by photosensitive solutions |
US3637379A (en) * | 1967-06-20 | 1972-01-25 | Teeg Research Inc | Method for making a relief pattern by means of electromagnetic radiation and heat-sensitive elements |
US3637380A (en) * | 1967-06-26 | 1972-01-25 | Teeg Research Inc | Methods for electrochemically making metallic patterns by means of radiation-sensitive elements |
US3650743A (en) * | 1967-10-06 | 1972-03-21 | Teeg Research Inc | Methods for making lithographic offset plates by means of electromagnetic radiation sensitive elements |
US3658616A (en) * | 1968-03-01 | 1972-04-25 | Polacoat Inc | Method of making light polarizing patterns |
US3761327A (en) * | 1971-03-19 | 1973-09-25 | Itt | Planar silicon gate mos process |
US4243865A (en) * | 1976-05-14 | 1981-01-06 | Data General Corporation | Process for treating material in plasma environment |
US4190488A (en) * | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
US4226666A (en) * | 1978-08-21 | 1980-10-07 | International Business Machines Corporation | Etching method employing radiation and noble gas halide |
US4260649A (en) * | 1979-05-07 | 1981-04-07 | The Perkin-Elmer Corporation | Laser induced dissociative chemical gas phase processing of workpieces |
US4454004A (en) * | 1983-02-28 | 1984-06-12 | Hewlett-Packard Company | Utilizing controlled illumination for creating or removing a conductive layer from a SiO2 insulator over a PN junction bearing semiconductor |
JPS59207631A (ja) * | 1983-05-11 | 1984-11-24 | Semiconductor Res Found | 光化学を用いたドライプロセス装置 |
US4612085A (en) * | 1985-04-10 | 1986-09-16 | Texas Instruments Incorporated | Photochemical patterning |
GB8806800D0 (en) * | 1988-03-22 | 1988-04-20 | British Telecomm | Etching methods |
JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
US6015503A (en) * | 1994-06-14 | 2000-01-18 | Fsi International, Inc. | Method and apparatus for surface conditioning |
US5534107A (en) * | 1994-06-14 | 1996-07-09 | Fsi International | UV-enhanced dry stripping of silicon nitride films |
US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
US5635102A (en) | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
US6165273A (en) | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
US20050014383A1 (en) * | 2003-07-15 | 2005-01-20 | Bing Ji | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
US9090499B2 (en) * | 2013-03-10 | 2015-07-28 | Qualcomm Incorporated | Method and apparatus for light induced etching of glass substrates in the fabrication of electronic circuits |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL34436C (fr) * | 1945-04-20 | |||
US2445238A (en) * | 1946-10-08 | 1948-07-13 | Rca Corp | Production of skeletonized low reflectance glass surface with fluosilicic acid vapor |
US2841477A (en) * | 1957-03-04 | 1958-07-01 | Pacific Semiconductors Inc | Photochemically activated gaseous etching method |
US2992586A (en) * | 1958-03-05 | 1961-07-18 | American Optical Corp | Multiple path light-conducting devices and method and apparatus for making same |
-
1961
- 1961-03-07 US US94056A patent/US3122463A/en not_active Expired - Lifetime
-
1962
- 1962-03-06 BE BE614728A patent/BE614728A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
US3122463A (en) | 1964-02-25 |
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