BE610281A - Process for obtaining semiconductor silicon, in particular monocrystalline. - Google Patents
Process for obtaining semiconductor silicon, in particular monocrystalline.Info
- Publication number
- BE610281A BE610281A BE610281A BE610281A BE610281A BE 610281 A BE610281 A BE 610281A BE 610281 A BE610281 A BE 610281A BE 610281 A BE610281 A BE 610281A BE 610281 A BE610281 A BE 610281A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor silicon
- obtaining semiconductor
- particular monocrystalline
- monocrystalline
- obtaining
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES71249A DE1147567B (en) | 1960-01-15 | 1960-11-14 | Process for obtaining, in particular, single-crystal, semiconducting silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
BE610281A true BE610281A (en) | 1962-03-01 |
Family
ID=7502338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE610281A BE610281A (en) | 1960-11-14 | 1961-11-14 | Process for obtaining semiconductor silicon, in particular monocrystalline. |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE610281A (en) |
CH (1) | CH464864A (en) |
SE (1) | SE306077B (en) |
-
1961
- 1961-09-19 CH CH1087461A patent/CH464864A/en unknown
- 1961-11-13 SE SE1129761A patent/SE306077B/xx unknown
- 1961-11-14 BE BE610281A patent/BE610281A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CH464864A (en) | 1968-11-15 |
SE306077B (en) | 1968-11-18 |
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