BE598065A - Semi-conducteur à deux bornes et à régions multiples. - Google Patents

Semi-conducteur à deux bornes et à régions multiples.

Info

Publication number
BE598065A
BE598065A BE598065A BE598065A BE598065A BE 598065 A BE598065 A BE 598065A BE 598065 A BE598065 A BE 598065A BE 598065 A BE598065 A BE 598065A BE 598065 A BE598065 A BE 598065A
Authority
BE
Belgium
Prior art keywords
terminal
region semiconductor
semiconductor
region
Prior art date
Application number
BE598065A
Other languages
English (en)
Inventor
G Strull
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE598065A publication Critical patent/BE598065A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Contacts (AREA)
BE598065A 1959-12-14 1960-12-12 Semi-conducteur à deux bornes et à régions multiples. BE598065A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US859191A US3189800A (en) 1959-12-14 1959-12-14 Multi-region two-terminal semiconductor device

Publications (1)

Publication Number Publication Date
BE598065A true BE598065A (fr) 1961-03-31

Family

ID=25330304

Family Applications (1)

Application Number Title Priority Date Filing Date
BE598065A BE598065A (fr) 1959-12-14 1960-12-12 Semi-conducteur à deux bornes et à régions multiples.

Country Status (6)

Country Link
US (1) US3189800A (fr)
BE (1) BE598065A (fr)
DE (1) DE1208414B (fr)
FR (1) FR1275987A (fr)
GB (1) GB965554A (fr)
NL (1) NL122785C (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1234326B (de) * 1963-08-03 1967-02-16 Siemens Ag Steuerbarer Gleichrichter mit einem einkristallinen Halbleiterkoerper und mit vier Zonen abwechselnd entgegengesetzten Leitungstyps
DE1212643B (de) * 1963-10-26 1966-03-17 Siemens Ag Steuerbares Halbleiterbauelement vom pnpn-Typ und Verfahren zum Herstellen
GB1037199A (en) * 1964-07-14 1966-07-27 Standard Telephones Cables Ltd Improvements in or relating to transistor manufacture
US3328652A (en) * 1964-07-20 1967-06-27 Gen Electric Voltage comparator

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2806983A (en) * 1956-06-01 1957-09-17 Gen Electric Remote base transistor
US2923870A (en) * 1956-06-28 1960-02-02 Honeywell Regulator Co Semiconductor devices
DE1063279B (de) * 1957-05-31 1959-08-13 Ibm Deutschland Halbleiteranordnung aus einem Halbleiterkoerper mit flaechenhaftem innerem pn-UEbergang und mit mehr als drei Elektroden
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
NL246349A (fr) * 1958-12-15
FR1223593A (fr) * 1959-01-30 1960-06-17 Perfectionnements aux transistors à effet de champ pour réseaux à deux bornes à résistance différentielle négative
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch

Also Published As

Publication number Publication date
DE1208414B (de) 1966-01-05
US3189800A (en) 1965-06-15
GB965554A (en) 1964-07-29
NL122785C (fr) 1967-08-15
FR1275987A (fr) 1961-11-10
NL258964A (fr) 1964-04-27

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