BE588537A - Process for obtaining a single crystal from a polycrystalline semiconductor bar by zonal melting without crucible - Google Patents

Process for obtaining a single crystal from a polycrystalline semiconductor bar by zonal melting without crucible

Info

Publication number
BE588537A
BE588537A BE588537A BE588537A BE588537A BE 588537 A BE588537 A BE 588537A BE 588537 A BE588537 A BE 588537A BE 588537 A BE588537 A BE 588537A BE 588537 A BE588537 A BE 588537A
Authority
BE
Belgium
Prior art keywords
crucible
obtaining
single crystal
polycrystalline semiconductor
semiconductor bar
Prior art date
Application number
BE588537A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE588537A publication Critical patent/BE588537A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
BE588537A 1959-03-13 1960-03-11 Process for obtaining a single crystal from a polycrystalline semiconductor bar by zonal melting without crucible BE588537A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES62123A DE1079593B (en) 1959-03-13 1959-03-13 Method for growing a single crystal from a polycrystalline semiconductor rod by crucible-free zone melting

Publications (1)

Publication Number Publication Date
BE588537A true BE588537A (en) 1960-07-01

Family

ID=7495362

Family Applications (1)

Application Number Title Priority Date Filing Date
BE588537A BE588537A (en) 1959-03-13 1960-03-11 Process for obtaining a single crystal from a polycrystalline semiconductor bar by zonal melting without crucible

Country Status (4)

Country Link
BE (1) BE588537A (en)
CH (1) CH376088A (en)
DE (1) DE1079593B (en)
GB (1) GB889160A (en)

Also Published As

Publication number Publication date
DE1079593B (en) 1960-04-14
GB889160A (en) 1962-02-07
CH376088A (en) 1964-03-31

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