BE586866A - Structure à semi-conducteur pour amplificateur paramétrique à micro-ondes. - Google Patents

Structure à semi-conducteur pour amplificateur paramétrique à micro-ondes.

Info

Publication number
BE586866A
BE586866A BE586866A BE586866A BE586866A BE 586866 A BE586866 A BE 586866A BE 586866 A BE586866 A BE 586866A BE 586866 A BE586866 A BE 586866A BE 586866 A BE586866 A BE 586866A
Authority
BE
Belgium
Prior art keywords
parametric
semiconductor structure
microwave amplifier
microwave
amplifier
Prior art date
Application number
BE586866A
Other languages
English (en)
Inventor
Maurice G A Bernard
Original Assignee
Maurice G A Bernard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maurice G A Bernard filed Critical Maurice G A Bernard
Publication of BE586866A publication Critical patent/BE586866A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F7/00—Parametric amplifiers
    • H03F7/04—Parametric amplifiers using variable-capacitance element; using variable-permittivity element
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Bipolar Transistors (AREA)
BE586866A 1959-03-11 1960-01-22 Structure à semi-conducteur pour amplificateur paramétrique à micro-ondes. BE586866A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR789076A FR1228285A (fr) 1959-03-11 1959-03-11 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes

Publications (1)

Publication Number Publication Date
BE586866A true BE586866A (fr) 1960-05-16

Family

ID=8712341

Family Applications (1)

Application Number Title Priority Date Filing Date
BE586866A BE586866A (fr) 1959-03-11 1960-01-22 Structure à semi-conducteur pour amplificateur paramétrique à micro-ondes.

Country Status (4)

Country Link
US (1) US3226268A (fr)
BE (1) BE586866A (fr)
FR (1) FR1228285A (fr)
GB (1) GB883468A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
DE1154871B (de) * 1961-01-13 1963-09-26 Bbc Brown Boveri & Cie Verfahren zum Herstellen von Halbleiterbauelementen mit wenigstens einem pn-UEbergang
US3397349A (en) * 1961-02-17 1968-08-13 Motorola Inc High voltage semiconductor rectifier with a sloping surface across barrier edge
NL276059A (fr) * 1961-03-17
NL280849A (fr) * 1961-07-12 1900-01-01
GB1052661A (fr) * 1963-01-30 1900-01-01
DE1278016B (de) * 1963-11-16 1968-09-19 Siemens Ag Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper
US4946800A (en) * 1965-09-28 1990-08-07 Li Chou H Method for making solid-state device utilizing isolation grooves
GB1145392A (en) * 1967-03-08 1969-03-12 Ass Elect Ind Improvements in semi-conductor rectifiers
US3486087A (en) * 1967-08-30 1969-12-23 Raytheon Co Small capacity semiconductor diode
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
BE556337A (fr) * 1956-04-03
BE552928A (fr) * 1957-03-18
NL112556C (fr) * 1957-06-25 1900-01-01
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
US3065115A (en) * 1959-12-29 1962-11-20 Texas Instruments Inc Method for fabricating transistors having desired current-transfer ratios
US3114088A (en) * 1960-08-23 1963-12-10 Texas Instruments Inc Gallium arsenide devices and contact therefor

Also Published As

Publication number Publication date
US3226268A (en) 1965-12-28
GB883468A (en) 1961-11-29
FR1228285A (fr) 1960-08-29

Similar Documents

Publication Publication Date Title
CH397089A (de) Halbleiterbauelement
CH430881A (de) Halbleiterbauelement
BE586866A (fr) Structure à semi-conducteur pour amplificateur paramétrique à micro-ondes.
BE616048A (fr) Monochromateur.
FR1217880A (fr) Amplificateur pour hyperfréquences
CH394402A (de) Halbleiterbauelement
BE588588A (fr) Amplificateur paramétrique.
BE589149A (fr) Circuits à semi-conducteurs.
BE592702A (fr) Circuits amplificateurs à transistors.
FR1312562A (fr) Amplificateur à transistrons
FR1301808A (fr) Haut-parleur perfectionné pour fréquences aiguës
AT249502B (de) Lichtpausgerät
FR1339862A (fr) Amplificateur à transistor symétrique
OA00875A (fr) Panneau pour constructions diverses.
FR1238790A (fr) Nouvel amplificateur paramétrique
FR1339887A (fr) Amplificateur à semi-conducteur
FR1217353A (fr) Amplificateur pour microondes
FR1359007A (fr) Amplificateurs paramétriques à fréquences élevées
FR1241493A (fr) Amplificateur paramétrique
FR1311629A (fr) Transistor à gain élevé
AT235141B (de) Mikrophotographische Einrichtung
FR1323649A (fr) Amplificateur à semi-conducteur
BE595419A (fr) Panneau pour constructions diverses.
FR1347665A (fr) Amplificateur à hyperfréquence
FR1252514A (fr) Amplificateur paramétrique de micro-onde