BE586693A - Semiconductor device manufacturing processes. - Google Patents
Semiconductor device manufacturing processes.Info
- Publication number
- BE586693A BE586693A BE586693A BE586693A BE586693A BE 586693 A BE586693 A BE 586693A BE 586693 A BE586693 A BE 586693A BE 586693 A BE586693 A BE 586693A BE 586693 A BE586693 A BE 586693A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor device
- device manufacturing
- manufacturing processes
- processes
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR784591A FR1222719A (en) | 1959-01-21 | 1959-01-21 | Semiconductor device manufacturing processes |
Publications (1)
Publication Number | Publication Date |
---|---|
BE586693A true BE586693A (en) | 1960-07-19 |
Family
ID=8710365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE586693A BE586693A (en) | 1959-01-21 | 1960-01-19 | Semiconductor device manufacturing processes. |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE586693A (en) |
CH (1) | CH364846A (en) |
DE (1) | DE1163975C2 (en) |
FR (1) | FR1222719A (en) |
GB (1) | GB909804A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1292257B (en) * | 1960-08-30 | 1969-04-10 | Siemens Ag | Method for alloying an electrode with the formation of a pn junction in a semiconducting germanium crystal for a semiconductor component |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL189769C (en) * | 1953-12-30 | Amp Akzo Corp | PROCEDURE FOR MAINTAINING BATH SOLUTIONS FOR THE DEPOSIT OF COPPER ON SUBSTRATE PLATES WITHOUT POWERLESS IN METAL ESTABLISHMENTS. | |
BE562973A (en) * | 1956-12-06 | 1900-01-01 | ||
NL230243A (en) * | 1957-08-07 |
-
1959
- 1959-01-21 FR FR784591A patent/FR1222719A/en not_active Expired
-
1960
- 1960-01-15 GB GB1495/60A patent/GB909804A/en not_active Expired
- 1960-01-19 BE BE586693A patent/BE586693A/en unknown
- 1960-01-20 DE DE1960J0017558 patent/DE1163975C2/en not_active Expired
- 1960-01-21 CH CH63860A patent/CH364846A/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB909804A (en) | 1962-11-07 |
CH364846A (en) | 1962-10-15 |
DE1163975B (en) | 1964-02-27 |
FR1222719A (en) | 1960-06-13 |
DE1163975C2 (en) | 1964-08-27 |
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