BE583121A - - Google Patents

Info

Publication number: BE583121A
Authority: BE; Belgium

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-09-30

Publication of BE583121A publication Critical patent/BE583121A/xx

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Electrodes Of Semiconductors (AREA)
Bipolar Transistors (AREA)

BE583121D 1958-09-30 BE583121A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DES60101A DE1113520B (en)	1958-09-30	1958-09-30	Process for the production of semiconductor arrangements, in particular for high current purposes, with several relatively large-area layers of different conductivity types

Publications (1)

Publication Number	Publication Date
BE583121A true BE583121A (en)

Family

ID=7493854

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE583121D BE583121A (en)	1958-09-30

Country Status (6)

Country	Link
BE (1)	BE583121A (en)
CH (1)	CH374773A (en)
DE (1)	DE1113520B (en)
FR (1)	FR1233333A (en)
GB (1)	GB909335A (en)
NL (1)	NL242039A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE668063A (en) *	1963-06-25
DE1278016B (en) *	1963-11-16	1968-09-19	Siemens Ag	Semiconductor component with a monocrystalline semiconductor body
GB1072703A (en) *	1964-05-12	1967-06-21	Mullard Ltd	Improvements in and relating to methods of manufacturing semiconductor bodies
DE1216989B (en) *	1964-06-24	1966-05-18	Licentia Gmbh	Method for producing a semiconductor component with a silicon body

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2821493A (en) *	1954-03-18	1958-01-28	Hughes Aircraft Co	Fused junction transistors with regrown base regions

0
- NL NL242039D patent/NL242039A/xx unknown
- BE BE583121D patent/BE583121A/xx unknown
1958
- 1958-09-30 DE DES60101A patent/DE1113520B/en active Pending
1959
- 1959-08-17 FR FR802977A patent/FR1233333A/en not_active Expired
- 1959-08-18 GB GB2819059A patent/GB909335A/en not_active Expired
- 1959-09-22 CH CH7851559A patent/CH374773A/en unknown

Also Published As

Publication number	Publication date
NL242039A (en)
GB909335A (en)	1962-10-31
DE1113520B (en)	1961-09-07
CH374773A (en)	1964-01-31
FR1233333A (en)	1960-10-12

Publication	Publication Date	Title
AT214638B (en)	1961-04-25
AT221043B (en)	1962-04-25
AT217439B (en)	1961-10-10
AT215747B (en)	1961-06-26
AT213908B (en)	1961-03-10
AT213446B (en)	1961-02-27
AT216227B (en)	1961-07-10
AT215751B (en)	1961-06-26
AT219815B (en)	1962-02-26
AT213670B (en)	1961-02-27
AT214270B (en)	1961-03-27
AT214348B (en)	1961-03-27
AT213631B (en)	1961-02-27
AT215738B (en)	1961-06-26
AT213558B (en)	1961-02-27
AT213557B (en)	1961-02-27
AT213472B (en)	1961-02-27
AT216612B (en)	1961-08-10
AT216749B (en)	1961-08-10
AT216771B (en)	1961-08-25
AT216803B (en)	1961-08-25
AT216831B (en)	1961-08-25
AT213337B (en)	1961-02-10
AT217982B (en)	1961-11-10
AT213313B (en)	1961-02-10