BE572917A - - Google Patents

Info

Publication number
BE572917A
BE572917A BE572917DA BE572917A BE 572917 A BE572917 A BE 572917A BE 572917D A BE572917D A BE 572917DA BE 572917 A BE572917 A BE 572917A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE572917A publication Critical patent/BE572917A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Conductive Materials (AREA)
BE572917D 1957-11-14 BE572917A (US06589383-20030708-C00041.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB35471/57A GB847681A (en) 1957-11-14 1957-11-14 Improvements in or relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
BE572917A true BE572917A (US06589383-20030708-C00041.png)

Family

ID=10378096

Family Applications (1)

Application Number Title Priority Date Filing Date
BE572917D BE572917A (US06589383-20030708-C00041.png) 1957-11-14

Country Status (5)

Country Link
US (1) US2985807A (US06589383-20030708-C00041.png)
BE (1) BE572917A (US06589383-20030708-C00041.png)
DE (1) DE1127483B (US06589383-20030708-C00041.png)
GB (1) GB847681A (US06589383-20030708-C00041.png)
NL (1) NL233208A (US06589383-20030708-C00041.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1722795U (US06589383-20030708-C00041.png) * 1900-01-01
US2583009A (en) * 1948-09-16 1952-01-22 Bell Telephone Labor Inc Asymmetric electrical conducting device
DE906955C (de) * 1952-03-28 1954-02-04 Licentia Gmbh Verfahren zur Erzeugung groesserer zusammenhaengender defektleitender Bereiche in den Aussenschichten von ueberschussleitenden Germaniumkristallen
US2767287A (en) * 1952-12-31 1956-10-16 Sprague Electric Co Electrode for crystalline negative resistance elements
US2840770A (en) * 1955-03-14 1958-06-24 Texas Instruments Inc Semiconductor device and method of manufacture
DE1765071U (de) * 1957-07-23 1958-04-17 Telefunken Gmbh Zuleitung zu einer legierungsstelle einer kristallode des legierungstyps.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Also Published As

Publication number Publication date
DE1127483B (de) 1962-04-12
US2985807A (en) 1961-05-23
GB847681A (en) 1960-09-14
NL233208A (US06589383-20030708-C00041.png)

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