BE551952A - - Google Patents

Info

Publication number
BE551952A
BE551952A BE551952DA BE551952A BE 551952 A BE551952 A BE 551952A BE 551952D A BE551952D A BE 551952DA BE 551952 A BE551952 A BE 551952A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE551952A publication Critical patent/BE551952A/xx

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q3/00Selecting arrangements
    • H04Q3/42Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/87Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
BE551952D 1955-11-22 BE551952A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US548330A US2855524A (en) 1955-11-22 1955-11-22 Semiconductive switch

Publications (1)

Publication Number Publication Date
BE551952A true BE551952A (fr)

Family

ID=24188389

Family Applications (1)

Application Number Title Priority Date Filing Date
BE551952D BE551952A (fr) 1955-11-22

Country Status (7)

Country Link
US (1) US2855524A (fr)
BE (1) BE551952A (fr)
CH (1) CH349299A (fr)
DE (1) DE1021891C2 (fr)
FR (1) FR1157540A (fr)
GB (1) GB813862A (fr)
NL (1) NL99632C (fr)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3141119A (en) * 1957-03-28 1964-07-14 Westinghouse Electric Corp Hyperconductive transistor switches
US2980810A (en) * 1957-12-30 1961-04-18 Bell Telephone Labor Inc Two-terminal semiconductive switch having five successive zones
DE1072714B (de) * 1958-02-13 1960-01-07 Westinghouse Electric Corporation, East Pittsburgh, Pa. (V. St. A.) Stromversorgungsschutzschaltung
US3027427A (en) * 1958-06-06 1962-03-27 Bell Telephone Labor Inc Electronic switching network
NL122949C (fr) * 1958-06-25 1900-01-01
DE1074090B (fr) * 1958-07-03 1960-01-28 Western Electric Company, Incor porated, New York, N. Y. (V. St. A.)
NL241053A (fr) * 1958-07-10
DE1142411B (de) * 1958-08-08 1963-01-17 Siemens Ag Einrichtung zur Umformung von Wechselstrom konstanter Frequenz in solchen veraenderbarer Frequenz und gegebenenfalls anderer Phasenzahl
NL246349A (fr) * 1958-12-15
US2997604A (en) * 1959-01-14 1961-08-22 Shockley William Semiconductive device and method of operating same
NL248703A (fr) * 1959-02-24
DE1104071B (de) * 1959-04-04 1961-04-06 Siemens Ag Vierschichten-Halbleiteranordnung mit einkristallinem Halbleiterkoerper und drei hintereinandergeschalteten pn-UEbergaengen mit abwechselnd entgegengesetzter Sperrichtung und Verfahren zu ihrer Herstellung
US3089998A (en) * 1959-04-15 1963-05-14 Westinghouse Electric Corp Regulator system
DE1121693B (de) * 1959-05-28 1962-01-11 Licentai Patent Verwaltungs G Anordnung zum Steuern eines elektrisch steuerbaren Schalters
BE590420A (fr) * 1959-06-04
NL251532A (fr) * 1959-06-17
US3093813A (en) * 1959-08-26 1963-06-11 Ferumeldewerk Arnstadt Veb Electronic switch
US3040270A (en) * 1959-09-01 1962-06-19 Gen Electric Silicon controlled rectifier circuit including a variable frequency oscillator
GB910459A (en) * 1959-10-02 1962-11-14 Standard Telephones Cables Ltd Improvements in or relating to automatic telecommunication exchanges
US3160828A (en) * 1960-01-25 1964-12-08 Westinghouse Electric Corp Radiation sensitive semiconductor oscillating device
BE623647A (fr) * 1960-03-23 1900-01-01
NL129185C (fr) * 1960-06-10
US3173091A (en) * 1960-08-30 1965-03-09 Westinghouse Electric Corp Microwave detector apparatus
NL268951A (fr) * 1960-09-07
US3254267A (en) * 1960-10-25 1966-05-31 Westinghouse Electric Corp Semiconductor-controlled, direct current responsive electroluminescent phosphors
DE1159096B (de) * 1960-12-05 1963-12-12 Fairchild Camera Instr Co Vierzonen-Halbleiterbauelement, insbesondere Transistor, zum Schalten mit einem pnpn-Halbleiterkoerper
NL272752A (fr) * 1960-12-20
US3171040A (en) * 1961-01-16 1965-02-23 Gen Dynamics Corp Fast charging circuit for pulse networks
US3193700A (en) * 1961-02-23 1965-07-06 Fairbanks Morse Inc Ramp generator circuit employing two capacitors, one including means for rapid discharging thereof
US3177375A (en) * 1961-03-27 1965-04-06 Electro Mechanical Res Inc Time-of-occurrence markers
US3135875A (en) * 1961-05-04 1964-06-02 Ibm Ring counter employing four-layer diodes and scaling resistors to effect counting
US3109109A (en) * 1961-08-29 1963-10-29 Bell Telephone Labor Inc Circuit employing negative resistance asymmetrically conducting devices connected inseries randomly or sequentially switched
US3248616A (en) * 1962-03-08 1966-04-26 Westinghouse Electric Corp Monolithic bistable flip-flop
US3221106A (en) * 1962-03-22 1965-11-30 Itt Speech path controller
US3193739A (en) * 1962-05-15 1965-07-06 Siemens Ag Semiconductor device having four-layer components for obtaining negative current-voltage characteristics
US3223978A (en) * 1962-06-08 1965-12-14 Radiation Inc End marking switch matrix utilizing negative impedance crosspoints
US3278687A (en) * 1963-07-19 1966-10-11 Stromberg Carlson Corp Four-layer diode network for identifying parties on a telephone line
DE1231296C2 (de) * 1964-03-19 1974-03-28 Elektronische schaltanordnung mit mindestens zwei zweipoligen halbleiterschaltelementen
DK114912B (da) * 1964-07-15 1969-08-18 R Relsted Vælgerkobling med lysimpulsstyring til anvendelse i automatiske koblingsanlæg samt vælger og koblingsanlæg opbygget med den nævnte vælgerkobling.
US3410966A (en) * 1965-05-27 1968-11-12 Bell Telephone Labor Inc System for remote testing of telephone subscribers' lines
US3454434A (en) * 1966-05-09 1969-07-08 Motorola Inc Multilayer semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588254A (en) * 1950-05-09 1952-03-04 Purdue Research Foundation Photoelectric and thermoelectric device utilizing semiconducting material
DE1048359B (fr) * 1952-07-22

Also Published As

Publication number Publication date
NL99632C (fr)
GB813862A (en) 1959-05-27
US2855524A (en) 1958-10-07
DE1021891B (de) 1958-01-02
CH349299A (de) 1960-10-15
DE1021891C2 (de) 1958-06-12
FR1157540A (fr) 1958-05-30

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