|
GB853352A
(en)
*
|
1957-12-16 |
1960-11-02 |
Vickers Electrical Co Ltd |
Improvements relating to electron emitters
|
|
FR1204367A
(fr)
*
|
1958-03-24 |
1960-01-26 |
Csf |
Cathode thermoélectronique froide à semi-conducteur
|
|
US3105166A
(en)
*
|
1959-01-15 |
1963-09-24 |
Westinghouse Electric Corp |
Electron tube with a cold emissive cathode
|
|
US3036234A
(en)
*
|
1959-09-28 |
1962-05-22 |
Bell Telephone Labor Inc |
Electron discharge devices employing secondary electron emission
|
|
US3119947A
(en)
*
|
1961-02-20 |
1964-01-28 |
Clevite Corp |
Semiconductive electron emissive device
|
|
US3242374A
(en)
*
|
1961-04-21 |
1966-03-22 |
Tung Sol Electric Inc |
Cold cathode with nickel base, calcium oxide interface and magnesium oxide layer
|
|
US3184636A
(en)
*
|
1961-06-15 |
1965-05-18 |
Sylvania Electric Prod |
Cold cathode
|
|
US3275844A
(en)
*
|
1962-11-16 |
1966-09-27 |
Burroughs Corp |
Active thin film quantum mechanical tunneling apparatus
|
|
FR1359344A
(fr)
*
|
1963-03-15 |
1964-04-24 |
Csf |
Perfectionnements aux cathodes froides à couche diélectrique
|
|
US3277313A
(en)
*
|
1963-07-05 |
1966-10-04 |
Burroughs Corp |
Solid state quantum mechanical tunneling apparatus
|
|
US3330991A
(en)
*
|
1963-07-12 |
1967-07-11 |
Raytheon Co |
Non-thermionic electron emission devices
|
|
US3364367A
(en)
*
|
1963-12-12 |
1968-01-16 |
Westinghouse Electric Corp |
Solid state electron multiplier including reverse-biased, dissimilar semiconductor layers
|
|
US3349297A
(en)
*
|
1964-06-23 |
1967-10-24 |
Bell Telephone Labor Inc |
Surface barrier semiconductor translating device
|
|
US3521073A
(en)
*
|
1965-11-26 |
1970-07-21 |
Gen Dynamics Corp |
Light emitting semiconductor diode using the field emission effect
|
|
US3581151A
(en)
*
|
1968-09-16 |
1971-05-25 |
Bell Telephone Labor Inc |
Cold cathode structure comprising semiconductor whisker elements
|
|
US3699404A
(en)
*
|
1971-02-24 |
1972-10-17 |
Rca Corp |
Negative effective electron affinity emitters with drift fields using deep acceptor doping
|
|
US3882355A
(en)
*
|
1972-12-29 |
1975-05-06 |
Ibm |
Flat screen display device using controlled cold cathodes
|
|
US3872489A
(en)
*
|
1973-02-22 |
1975-03-18 |
Gte Laboratories Inc |
Electron emission from a cold cathode
|
|
NL184549C
(nl)
*
|
1978-01-27 |
1989-08-16 |
Philips Nv |
Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
|
|
US4683399A
(en)
*
|
1981-06-29 |
1987-07-28 |
Rockwell International Corporation |
Silicon vacuum electron devices
|
|
NL8104893A
(nl)
*
|
1981-10-29 |
1983-05-16 |
Philips Nv |
Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
|
|
GB2109159B
(en)
*
|
1981-11-06 |
1985-05-30 |
Philips Electronic Associated |
Semiconductor electron source for display tubes and other equipment
|
|
GB2109160B
(en)
*
|
1981-11-06 |
1985-05-30 |
Philips Electronic Associated |
Semiconductor electron source for display tubes and other equipment
|
|
NL8200875A
(nl)
*
|
1982-03-04 |
1983-10-03 |
Philips Nv |
Inrichting voor het opnemen of weergeven van beelden en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.
|
|
US4513308A
(en)
*
|
1982-09-23 |
1985-04-23 |
The United States Of America As Represented By The Secretary Of The Navy |
p-n Junction controlled field emitter array cathode
|
|
NL8500413A
(nl)
*
|
1985-02-14 |
1986-09-01 |
Philips Nv |
Electronenbundelapparaat met een halfgeleider electronenemitter.
|
|
FR2634060B1
(fr)
*
|
1988-07-05 |
1996-02-09 |
Thomson Csf |
Structure de source d'electrons et application aux tubes d'emission d'ondes electromagnetiques
|
|
US5359257A
(en)
*
|
1990-12-03 |
1994-10-25 |
Bunch Kyle J |
Ballistic electron, solid state cathode
|
|
US5410158A
(en)
*
|
1993-01-22 |
1995-04-25 |
Motorola, Inc. |
Bipolar transistor apparatus with iso-terminals
|
|
EP0959485A1
(en)
*
|
1998-05-18 |
1999-11-24 |
Barco N.V. |
Cold cathode electron-emitting device
|