BE548745A - - Google Patents
Info
- Publication number
- BE548745A BE548745A BE548745DA BE548745A BE 548745 A BE548745 A BE 548745A BE 548745D A BE548745D A BE 548745DA BE 548745 A BE548745 A BE 548745A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/50—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1066283T |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE548745A true BE548745A (cg-RX-API-DMAC10.html) |
Family
ID=7719150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE548745D BE548745A (cg-RX-API-DMAC10.html) |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE548745A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1066283B (cg-RX-API-DMAC10.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1123402B (de) * | 1958-12-15 | 1962-02-08 | Ibm | Halbleiterdiode mit mehreren PN-UEbergaengen |
| DE1161645B (de) * | 1957-02-27 | 1964-01-23 | Westinghouse Electric Corp | Schaltdiode mit drei Zonen abwechselnden Leitfaehigkeitstyps sowie je einer ohmschen Elektrode an den beiden aeusseren Zonen |
| DE1166941B (de) * | 1957-02-07 | 1964-04-02 | Telefunken Patent | Halbleiterbauelement mit pn-UEbergang |
| DE1205197B (de) * | 1958-02-28 | 1965-11-18 | Westinghouse Electric Corp | Anordnung zur Steuerung des Zuendkreises elektrischer Entladungsgefaesse mit Hilfe einer Schaltdiode |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1196794C2 (de) * | 1960-03-26 | 1966-04-07 | Telefunken Patent | Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen |
| US3194699A (en) * | 1961-11-13 | 1965-07-13 | Transitron Electronic Corp | Method of making semiconductive devices |
| DE102017103111B4 (de) | 2017-02-16 | 2025-03-13 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterdiode und elektronische Schaltungsanordnung hiermit |
-
0
- BE BE548745D patent/BE548745A/xx unknown
- DE DENDAT1066283D patent/DE1066283B/de active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1166941B (de) * | 1957-02-07 | 1964-04-02 | Telefunken Patent | Halbleiterbauelement mit pn-UEbergang |
| DE1161645B (de) * | 1957-02-27 | 1964-01-23 | Westinghouse Electric Corp | Schaltdiode mit drei Zonen abwechselnden Leitfaehigkeitstyps sowie je einer ohmschen Elektrode an den beiden aeusseren Zonen |
| DE1205197B (de) * | 1958-02-28 | 1965-11-18 | Westinghouse Electric Corp | Anordnung zur Steuerung des Zuendkreises elektrischer Entladungsgefaesse mit Hilfe einer Schaltdiode |
| DE1123402B (de) * | 1958-12-15 | 1962-02-08 | Ibm | Halbleiterdiode mit mehreren PN-UEbergaengen |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1066283B (cg-RX-API-DMAC10.html) | 1959-10-01 |
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| DE1066283B (cg-RX-API-DMAC10.html) | ||
| DE1196794C2 (de) | Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen | |
| US10312380B2 (en) | Semiconductor diode and electronic circuit arrangement herewith | |
| DE1166941B (de) | Halbleiterbauelement mit pn-UEbergang | |
| DE1205197B (de) | Anordnung zur Steuerung des Zuendkreises elektrischer Entladungsgefaesse mit Hilfe einer Schaltdiode | |
| DE1161645B (de) | Schaltdiode mit drei Zonen abwechselnden Leitfaehigkeitstyps sowie je einer ohmschen Elektrode an den beiden aeusseren Zonen |