BE542380A - - Google Patents

Info

Publication number
BE542380A
BE542380A BE542380DA BE542380A BE 542380 A BE542380 A BE 542380A BE 542380D A BE542380D A BE 542380DA BE 542380 A BE542380 A BE 542380A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE542380A publication Critical patent/BE542380A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE542380D 1954-10-29 BE542380A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US465638A US2840497A (en) 1954-10-29 1954-10-29 Junction transistors and processes for producing them

Publications (1)

Publication Number Publication Date
BE542380A true BE542380A (en:Method)

Family

ID=23848571

Family Applications (1)

Application Number Title Priority Date Filing Date
BE542380D BE542380A (en:Method) 1954-10-29

Country Status (7)

Country Link
US (1) US2840497A (en:Method)
BE (1) BE542380A (en:Method)
CH (1) CH338904A (en:Method)
DE (1) DE1179646B (en:Method)
FR (1) FR1143107A (en:Method)
GB (1) GB799293A (en:Method)
NL (2) NL200888A (en:Method)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US3066051A (en) * 1957-05-14 1962-11-27 Sprague Electric Co Preparation of multiple p-n junction semiconductor crystals
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US3008089A (en) * 1958-02-20 1961-11-07 Bell Telephone Labor Inc Semiconductive device comprising p-i-n conductivity layers
US2998334A (en) * 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US3109938A (en) * 1958-03-19 1963-11-05 Rauland Corp Semi-conductor device having a gas-discharge type switching characteristic
NL230316A (en:Method) * 1958-08-07
US3049451A (en) * 1959-09-02 1962-08-14 Tung Sol Electric Inc Multiple zone semiconductor device and method of making the same
NL259311A (en:Method) * 1959-12-21
NL263771A (en:Method) * 1960-04-26
GB985864A (en) * 1960-08-05 1965-03-10 Telefunken Patent A semiconductor device
NL257150A (en:Method) * 1960-10-22 1900-01-01
NL278058A (en:Method) * 1961-05-26
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
NL272046A (en:Method) * 1961-11-30
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3275906A (en) * 1962-08-20 1966-09-27 Nippon Electric Co Multiple hetero-layer composite semiconductor device
US3235419A (en) * 1963-01-15 1966-02-15 Philips Corp Method of manufacturing semiconductor devices
GB1145121A (en) * 1965-07-30 1969-03-12 Associated Semiconductor Mft Improvements in and relating to transistors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (en:Method) * 1949-11-30
BE505814A (en:Method) * 1950-09-14 1900-01-01
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
BE510303A (en:Method) * 1951-11-16
USRE24537E (en) * 1952-07-29 1958-09-23 Unsymmetrical conductor arrangements
BE524233A (en:Method) * 1952-11-14
BE525428A (en:Method) * 1952-12-30

Also Published As

Publication number Publication date
FR1143107A (fr) 1957-09-26
NL200888A (en:Method)
GB799293A (en) 1958-08-06
DE1179646B (de) 1964-10-15
NL103256C (en:Method)
CH338904A (de) 1959-06-15
US2840497A (en) 1958-06-24

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