BE541945A - - Google Patents

Info

Publication number
BE541945A
BE541945A BE541945A BE541945A BE541945A BE 541945 A BE541945 A BE 541945A BE 541945 A BE541945 A BE 541945A BE 541945 A BE541945 A BE 541945A BE 541945 A BE541945 A BE 541945A
Authority
BE
Belgium
Application number
BE541945A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE541945A publication Critical patent/BE541945A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/787—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with two electrodes and exhibiting a negative resistance characteristic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE541945A 1954-10-26 1955-10-10 BE541945A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US464737A US2908871A (en) 1954-10-26 1954-10-26 Negative resistance semiconductive apparatus

Publications (1)

Publication Number Publication Date
BE541945A true BE541945A (xx) 1955-10-31

Family

ID=23845040

Family Applications (1)

Application Number Title Priority Date Filing Date
BE541945A BE541945A (xx) 1954-10-26 1955-10-10

Country Status (4)

Country Link
US (1) US2908871A (xx)
BE (1) BE541945A (xx)
DE (1) DE1021966B (xx)
GB (1) GB790387A (xx)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3016313A (en) * 1958-05-15 1962-01-09 Gen Electric Semiconductor devices and methods of making the same
NL276371A (xx) * 1959-08-25
US3109758A (en) * 1959-10-26 1963-11-05 Bell Telephone Labor Inc Improved tunnel diode
US3151006A (en) * 1960-02-12 1964-09-29 Siemens Ag Use of a highly pure semiconductor carrier material in a vapor deposition process
US3202912A (en) * 1960-05-05 1965-08-24 Bell Telephone Labor Inc Method of utilizing tunnel diodes to detect changes in magnetic fields
US3118794A (en) * 1960-09-06 1964-01-21 Bell Telephone Labor Inc Composite tunnel diode
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
GB1025111A (en) * 1962-02-02 1966-04-06 Ass Elect Ind Improvements relating to solid state radiation detectors
DE1464305B2 (de) * 1962-02-10 1970-09-10 Nippon Electric Co. Ltd., Tokio Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente
NL291461A (xx) * 1962-04-18
US3300710A (en) * 1963-01-23 1967-01-24 Dalton L Knauss Voltage reference circuit with low incremental impedance and low temperature coefficient
US3365627A (en) * 1963-06-18 1968-01-23 Sprague Electric Co Diode circuits and diodes therefor
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3374404A (en) * 1964-09-18 1968-03-19 Texas Instruments Inc Surface-oriented semiconductor diode
US3374124A (en) * 1965-01-07 1968-03-19 Ca Atomic Energy Ltd Method of making lithium-drift diodes by diffusion
USB433088I5 (xx) * 1965-02-16
US3385981A (en) * 1965-05-03 1968-05-28 Hughes Aircraft Co Double injection two carrier devices and method of operation
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Ind Co Ltd Negative resistance semiconductor device having an intrinsic region
US3366819A (en) * 1966-02-14 1968-01-30 Ibm Light emitting semiconductor device
US3471924A (en) * 1967-04-13 1969-10-14 Globe Union Inc Process for manufacturing inexpensive semiconductor devices
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure
US3697834A (en) * 1971-01-27 1972-10-10 Bell Telephone Labor Inc Relaxation semiconductor devices
KR100464054B1 (ko) 2002-12-27 2005-01-03 엘지전자 주식회사 일체형 캐비넷/터브를 구비한 드럼 세탁기
EP2305874B1 (en) 2002-12-27 2017-08-23 LG Electronics Inc. Drum type washing machine
KR100634802B1 (ko) 2004-07-20 2006-10-16 엘지전자 주식회사 드럼 세탁기
US7841220B2 (en) 2005-09-30 2010-11-30 Lg Electronics Inc. Drum-type washing machine
KR100651853B1 (ko) 2005-09-30 2006-12-01 엘지전자 주식회사 인서트사출형 베어링하우징조립체 및 이를 구비한캐비넷/터브 일체형 드럼세탁기
US7536882B2 (en) 2006-03-29 2009-05-26 Lg Electronics Inc. Drum type washing machine

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2670441A (en) * 1949-09-07 1954-02-23 Bell Telephone Labor Inc Alpha particle counter
US2794863A (en) * 1951-07-20 1957-06-04 Bell Telephone Labor Inc Semiconductor translating device and circuit
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain
NL96818C (xx) * 1952-03-14
US2711379A (en) * 1952-08-04 1955-06-21 Rothstein Jerome Method of controlling the concentration of impurities in semi-conducting materials

Also Published As

Publication number Publication date
GB790387A (en) 1958-02-05
US2908871A (en) 1959-10-13
DE1021966B (de) 1958-01-02

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