BE533564A - - Google Patents
Info
- Publication number
- BE533564A BE533564A BE533564DA BE533564A BE 533564 A BE533564 A BE 533564A BE 533564D A BE533564D A BE 533564DA BE 533564 A BE533564 A BE 533564A
- Authority
- BE
- Belgium
- Prior art keywords
- sep
- electrode
- semiconductor
- contact
- block
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Conductive Materials (AREA)
Publications (1)
Publication Number | Publication Date |
---|---|
BE533564A true BE533564A (hu) |
Family
ID=165230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE533564D BE533564A (hu) |
Country Status (1)
Country | Link |
---|---|
BE (1) | BE533564A (hu) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1068385B (hu) * | 1957-07-01 | 1959-11-05 |
-
0
- BE BE533564D patent/BE533564A/fr unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1068385B (hu) * | 1957-07-01 | 1959-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2877147A (en) | Alloyed semiconductor contacts | |
Triboulet et al. | Growth and characterization of bulk HgZnTe crystals | |
Conn et al. | Thermoelectric and crystallographic properties of Ag2Se | |
US2757324A (en) | Fabrication of silicon translating devices | |
US4433342A (en) | Amorphous switching device with residual crystallization retardation | |
EP0835947B1 (fr) | Tole aluminiée à faible émissivité et procédé pour obtenir ledit produit | |
US2847335A (en) | Semiconductor devices and method of manufacturing them | |
FR2760931A1 (fr) | Ensemble capteur-dispositif de chauffage | |
FR2588572A1 (fr) | Alliage de cuivre et sa fabrication | |
US2959501A (en) | Silicon semiconductor device and method of producing it | |
JPH03150273A (ja) | 超伝導材料を、それら自体に、導電材料に、又は半導体材料に電気的に接合する方法 | |
KR920702798A (ko) | 열전반도체 재료 및 그 제조방법 | |
EP0135230B1 (fr) | Dispositif semi-conducteur, notamment transistor incluant des moyens de protection contre les surcharges | |
FR2481517A1 (fr) | Procede permettant de provoquer l'ecoulement de materiaux a base de dioxyde de silicium au moyen d'un laser | |
EP0526361A1 (fr) | Electrode en alliage de cuivre à hautes performances pour usinage par électro érosion et procédé de fabrication | |
FR2484469A1 (fr) | Procede de preparation de couches homogenes de hg1-xcdxte | |
BE533564A (hu) | ||
Suzuki et al. | Low‐resistance contacts on YBa2Cu3O7− δ ceramics prepared by direct wire bonding methods | |
US3959522A (en) | Method for forming an ohmic contact | |
FR2824766A1 (fr) | Procede et dispositif pour un brasage sans martensite | |
FR3090433A1 (fr) | fil électrode à laiton en phase Delta pour usinage par électroérosion, et procédé pour sa fabrication | |
US2861230A (en) | Calorized point contact electrode for semiconductor devices | |
US3065534A (en) | Method of joining a semiconductor to a conductor | |
US3368274A (en) | Method of applying an ohmic contact to silicon of high resistivity | |
FR2678432A1 (fr) | Procede de liaison entre une ceramique supraconductrice a haute temperature critique et un conducteur supraconducteur a base de niobium-titane. |