BE531626A - - Google Patents

Info

Publication number
BE531626A
BE531626A BE531626DA BE531626A BE 531626 A BE531626 A BE 531626A BE 531626D A BE531626D A BE 531626DA BE 531626 A BE531626 A BE 531626A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE531626A publication Critical patent/BE531626A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE531626D 1953-09-04 BE531626A (US20020095090A1-20020718-M00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US378567A US2836521A (en) 1953-09-04 1953-09-04 Hook collector and method of producing same

Publications (1)

Publication Number Publication Date
BE531626A true BE531626A (US20020095090A1-20020718-M00002.png)

Family

ID=23493644

Family Applications (1)

Application Number Title Priority Date Filing Date
BE531626D BE531626A (US20020095090A1-20020718-M00002.png) 1953-09-04

Country Status (4)

Country Link
US (1) US2836521A (US20020095090A1-20020718-M00002.png)
BE (1) BE531626A (US20020095090A1-20020718-M00002.png)
FR (1) FR1114367A (US20020095090A1-20020718-M00002.png)
GB (1) GB754404A (US20020095090A1-20020718-M00002.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105522B (de) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor mit einem scheibenfoermigen Halbleiterkoerper

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
NL219673A (US20020095090A1-20020718-M00002.png) * 1956-08-10
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US3066051A (en) * 1957-05-14 1962-11-27 Sprague Electric Co Preparation of multiple p-n junction semiconductor crystals
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US2961475A (en) * 1957-05-29 1960-11-22 Rca Corp Solid-state charge carrier valve
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US2974262A (en) * 1957-06-11 1961-03-07 Abraham George Solid state device and method of making same
US3150017A (en) * 1957-06-29 1964-09-22 Sony Corp Doping a pulled semiconductor crystal with impurities having different diffusion coefficients
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
NL224041A (US20020095090A1-20020718-M00002.png) * 1958-01-14
US2998334A (en) * 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US3109938A (en) * 1958-03-19 1963-11-05 Rauland Corp Semi-conductor device having a gas-discharge type switching characteristic
NL229074A (US20020095090A1-20020718-M00002.png) * 1958-06-26
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
NL111773C (US20020095090A1-20020718-M00002.png) * 1958-08-07
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
GB936181A (en) * 1959-05-19 1963-09-04 Nat Res Dev Improvements in and relating to solid-state electrical devices
US3092733A (en) * 1959-07-16 1963-06-04 Rauland Corp Four zone transistor having integral diode formed on base remote from transistor
US3049451A (en) * 1959-09-02 1962-08-14 Tung Sol Electric Inc Multiple zone semiconductor device and method of making the same
US3072504A (en) * 1959-10-20 1963-01-08 Texas Instruments Inc Junction growing technique
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1184586B (de) * 1960-03-24 1964-12-31 Siemens Ag Verfahren zur Erzeugung einlegierter Dotierungszonen bzw. Elektroden an Halbleiteranordnungen
NL263771A (US20020095090A1-20020718-M00002.png) * 1960-04-26
NL264273A (US20020095090A1-20020718-M00002.png) * 1960-05-02
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3257589A (en) * 1962-05-22 1966-06-21 Texas Instruments Inc Transistors and the fabrication thereof
US3268375A (en) * 1962-05-22 1966-08-23 Gordon J Ratcliff Alloy-diffusion process for fabricating germanium transistors
CH396228A (de) * 1962-05-29 1965-07-31 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium
US3235419A (en) * 1963-01-15 1966-02-15 Philips Corp Method of manufacturing semiconductor devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE466804A (US20020095090A1-20020718-M00002.png) * 1941-12-19
BE466591A (US20020095090A1-20020718-M00002.png) * 1945-07-13
US2449484A (en) * 1945-11-10 1948-09-14 Brush Dev Co Method of controlling the resistivity of p-type crystals
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
BE500302A (US20020095090A1-20020718-M00002.png) * 1949-11-30
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
NL168491B (US20020095090A1-20020718-M00002.png) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
NL87620C (US20020095090A1-20020718-M00002.png) * 1952-11-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105522B (de) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor mit einem scheibenfoermigen Halbleiterkoerper

Also Published As

Publication number Publication date
GB754404A (en) 1956-08-08
US2836521A (en) 1958-05-27
FR1114367A (fr) 1956-04-11

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