BE525387A - - Google Patents

Info

Publication number
BE525387A
BE525387A BE525387DA BE525387A BE 525387 A BE525387 A BE 525387A BE 525387D A BE525387D A BE 525387DA BE 525387 A BE525387 A BE 525387A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE525387A publication Critical patent/BE525387A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
BE525387D 1952-12-29 BE525387A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US328436A US2721965A (en) 1952-12-29 1952-12-29 Power transistor

Publications (1)

Publication Number Publication Date
BE525387A true BE525387A (zh) 1900-01-01

Family

ID=23280975

Family Applications (1)

Application Number Title Priority Date Filing Date
BE525387D BE525387A (zh) 1952-12-29

Country Status (3)

Country Link
US (1) US2721965A (zh)
BE (1) BE525387A (zh)
FR (1) FR1090281A (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859394A (en) * 1953-02-27 1958-11-04 Sylvania Electric Prod Fabrication of semiconductor devices
US2822307A (en) * 1953-04-24 1958-02-04 Sylvania Electric Prod Technique for multiple p-n junctions
US2918719A (en) * 1953-12-30 1959-12-29 Rca Corp Semi-conductor devices and methods of making them
US2859141A (en) * 1954-04-30 1958-11-04 Raytheon Mfg Co Method for making a semiconductor junction
BE548647A (zh) * 1955-06-28
US2897421A (en) * 1954-08-11 1959-07-28 Westinghouse Electric Corp Phototransistor design
US2879457A (en) * 1954-10-28 1959-03-24 Raytheon Mfg Co Ohmic semiconductor contact
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2948836A (en) * 1955-03-30 1960-08-09 Raytheon Co Electrode connections to semiconductive bodies
US2861909A (en) * 1955-04-25 1958-11-25 Rca Corp Semiconductor devices
US2761800A (en) * 1955-05-02 1956-09-04 Rca Corp Method of forming p-n junctions in n-type germanium
US2887415A (en) * 1955-05-12 1959-05-19 Honeywell Regulator Co Method of making alloyed junction in a silicon wafer
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US2767085A (en) * 1955-07-01 1956-10-16 Rca Corp Indium-gold amalgams
US3062690A (en) * 1955-08-05 1962-11-06 Hoffman Electronics Corp Semi-conductor device and method of making the same
US2849665A (en) * 1955-10-17 1958-08-26 Westinghouse Electric Corp Ultra high power transistor
US2937961A (en) * 1955-11-15 1960-05-24 Sumner P Wolsky Method of making junction semiconductor devices
US2960419A (en) * 1956-02-08 1960-11-15 Siemens Ag Method and device for producing electric semiconductor devices
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
NL215555A (zh) * 1956-03-23
US3063129A (en) * 1956-08-08 1962-11-13 Bendix Corp Transistor
US2820135A (en) * 1956-09-05 1958-01-14 Pacific Semiconductors Inc Method for producing electrical contact to semiconductor devices
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US2968750A (en) * 1957-03-20 1961-01-17 Clevite Corp Transistor structure and method of making the same
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
US3124640A (en) * 1960-01-20 1964-03-10 Figure
NL269092A (zh) * 1960-09-09 1900-01-01
US3303400A (en) * 1961-07-25 1967-02-07 Fairchild Camera Instr Co Semiconductor device complex
US3153154A (en) * 1962-02-13 1964-10-13 James J Murray Grid controlled transistor device
US3317801A (en) * 1963-06-19 1967-05-02 Jr Freeman D Shepherd Tunneling enhanced transistor
US3352726A (en) * 1964-04-13 1967-11-14 Philco Ford Corp Method of fabricating planar semiconductor devices
US3430115A (en) * 1966-08-31 1969-02-25 Webb James E Apparatus for ballasting high frequency transistors
US3584268A (en) * 1967-03-03 1971-06-08 Xerox Corp Inverted space charge limited triode
DE1803883A1 (de) * 1968-10-18 1970-05-27 Siemens Ag Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
US2586080A (en) * 1949-10-11 1952-02-19 Bell Telephone Labor Inc Semiconductive signal translating device
US2561123A (en) * 1950-04-04 1951-07-17 Rca Corp Multicontact semiconductor devices
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells

Also Published As

Publication number Publication date
US2721965A (en) 1955-10-25
FR1090281A (fr) 1955-03-29

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