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1953-02-27 |
1958-11-04 |
Sylvania Electric Prod |
Fabrication of semiconductor devices
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1953-04-24 |
1958-02-04 |
Sylvania Electric Prod |
Technique for multiple p-n junctions
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US2918719A
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*
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1953-12-30 |
1959-12-29 |
Rca Corp |
Semi-conductor devices and methods of making them
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*
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1954-04-30 |
1958-11-04 |
Raytheon Mfg Co |
Method for making a semiconductor junction
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NL99619C
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*
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1955-06-28 |
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US2897421A
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*
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1954-08-11 |
1959-07-28 |
Westinghouse Electric Corp |
Phototransistor design
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1954-10-28 |
1959-03-24 |
Raytheon Mfg Co |
Ohmic semiconductor contact
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DE1073111B
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1954-12-02 |
1960-01-14 |
Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen |
Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
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1955-03-30 |
1960-08-09 |
Raytheon Co |
Electrode connections to semiconductive bodies
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1955-04-25 |
1958-11-25 |
Rca Corp |
Semiconductor devices
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1955-05-02 |
1956-09-04 |
Rca Corp |
Method of forming p-n junctions in n-type germanium
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1955-05-12 |
1959-05-19 |
Honeywell Regulator Co |
Method of making alloyed junction in a silicon wafer
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1955-05-23 |
1959-10-20 |
Texas Instruments Inc |
Base contacts for transistors
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1955-07-01 |
1956-10-16 |
Rca Corp |
Indium-gold amalgams
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1955-08-05 |
1962-11-06 |
Hoffman Electronics Corp |
Semi-conductor device and method of making the same
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*
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1955-10-17 |
1958-08-26 |
Westinghouse Electric Corp |
Ultra high power transistor
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1955-11-15 |
1960-05-24 |
Sumner P Wolsky |
Method of making junction semiconductor devices
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1956-02-08 |
1960-11-15 |
Siemens Ag |
Method and device for producing electric semiconductor devices
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1956-02-29 |
1961-08-01 |
Baldwin Piano Co |
Transistor amplifiers
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NL215555A
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1956-03-23 |
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US3063129A
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1956-08-08 |
1962-11-13 |
Bendix Corp |
Transistor
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1956-09-05 |
1958-01-14 |
Pacific Semiconductors Inc |
Method for producing electrical contact to semiconductor devices
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1957-01-04 |
1961-05-23 |
Texas Instruments Inc |
Production of high temperature alloyed semiconductors
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1957-03-20 |
1961-01-17 |
Clevite Corp |
Transistor structure and method of making the same
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1958-07-14 |
1960-05-24 |
Int Rectifier Corp |
Temperature compensating zener diode construction
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1958-11-20 |
1965-12-28 |
Int Rectifier Corp |
Method of making a transistor containing a multiplicity of depressions
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1960-01-20 |
1964-03-10 |
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Figure |
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NL269092A
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1960-09-09 |
1900-01-01 |
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1961-07-25 |
1967-02-07 |
Fairchild Camera Instr Co |
Semiconductor device complex
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1962-02-13 |
1964-10-13 |
James J Murray |
Grid controlled transistor device
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1963-06-19 |
1967-05-02 |
Jr Freeman D Shepherd |
Tunneling enhanced transistor
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1964-04-13 |
1967-11-14 |
Philco Ford Corp |
Method of fabricating planar semiconductor devices
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1966-08-31 |
1969-02-25 |
Webb James E |
Apparatus for ballasting high frequency transistors
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1967-03-03 |
1971-06-08 |
Xerox Corp |
Inverted space charge limited triode
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1968-10-18 |
1970-05-27 |
Siemens Ag |
Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung
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2006-01-09 |
2012-05-01 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Interdigitated capacitive structure for an integrated circuit
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