BE517808A - - Google Patents
Info
- Publication number
- BE517808A BE517808A BE517808DA BE517808A BE 517808 A BE517808 A BE 517808A BE 517808D A BE517808D A BE 517808DA BE 517808 A BE517808 A BE 517808A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F9/00—Magnetic amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US276511A US2790037A (en) | 1952-03-14 | 1952-03-14 | Semiconductor signal translating devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BE517808A true BE517808A (es) |
Family
ID=23056924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE517808D BE517808A (es) | 1952-03-14 |
Country Status (7)
Country | Link |
---|---|
US (1) | US2790037A (es) |
BE (1) | BE517808A (es) |
CH (1) | CH330640A (es) |
DE (1) | DE1007887B (es) |
FR (1) | FR1068868A (es) |
GB (1) | GB756339A (es) |
NL (1) | NL96818C (es) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2899652A (en) * | 1959-08-11 | Distance | ||
US3123788A (en) * | 1964-03-03 | Piezoresistive gage | ||
NL299567A (es) * | 1952-06-14 | |||
US2974236A (en) * | 1953-03-11 | 1961-03-07 | Rca Corp | Multi-electrode semiconductor devices |
US2933619A (en) * | 1953-03-25 | 1960-04-19 | Siemens Ag | Semi-conductor device comprising an anode, a cathode and a control electrode |
NL188547B (nl) * | 1953-06-22 | Nippon Musical Instruments Mfg | Elektronisch muziekinstrument. | |
US2927221A (en) * | 1954-01-19 | 1960-03-01 | Clevite Corp | Semiconductor devices and trigger circuits therefor |
US2932748A (en) * | 1954-07-26 | 1960-04-12 | Rca Corp | Semiconductor devices |
DE1025994B (de) * | 1954-08-09 | 1958-03-13 | Deutsche Bundespost | Halbleiteranordnung zur Gleichrichtung, Steuerung oder Verstaerkung elektrischer oder photoelektrischer Stroeme |
US2883313A (en) * | 1954-08-16 | 1959-04-21 | Rca Corp | Semiconductor devices |
US2908871A (en) * | 1954-10-26 | 1959-10-13 | Bell Telephone Labor Inc | Negative resistance semiconductive apparatus |
US2913676A (en) * | 1955-04-18 | 1959-11-17 | Rca Corp | Semiconductor devices and systems |
US2877358A (en) * | 1955-06-20 | 1959-03-10 | Bell Telephone Labor Inc | Semiconductive pulse translator |
US2889469A (en) * | 1955-10-05 | 1959-06-02 | Rca Corp | Semi-conductor electrical pulse counting means |
US2967952A (en) * | 1956-04-25 | 1961-01-10 | Shockley William | Semiconductor shift register |
US2869054A (en) * | 1956-11-09 | 1959-01-13 | Ibm | Unipolar transistor |
US2878152A (en) * | 1956-11-28 | 1959-03-17 | Texas Instruments Inc | Grown junction transistors |
US3047733A (en) * | 1957-03-12 | 1962-07-31 | Ibm | Multiple output semiconductor logical device |
US2929753A (en) * | 1957-04-11 | 1960-03-22 | Beckman Instruments Inc | Transistor structure and method |
US3033714A (en) * | 1957-09-28 | 1962-05-08 | Sony Corp | Diode type semiconductor device |
NL238689A (es) * | 1958-02-15 | |||
US3116183A (en) * | 1958-05-15 | 1963-12-31 | Gen Electric | Asymmetrically conductive device |
DE1099081B (de) * | 1958-05-15 | 1961-02-09 | Gen Electric | Spacistor mit einem in Sperrichtung vorgespannten pin-Halbleiterkoerper und mit einer injizierenden Elektrode und einer nicht injizierenden Modulator-Elektrode auf der i-Zone |
US2893904A (en) * | 1958-10-27 | 1959-07-07 | Hoffman Electronics | Thermal zener device or the like |
GB936181A (en) * | 1959-05-19 | 1963-09-04 | Nat Res Dev | Improvements in and relating to solid-state electrical devices |
NL252543A (es) * | 1959-06-12 | |||
US2959681A (en) * | 1959-06-18 | 1960-11-08 | Fairchild Semiconductor | Semiconductor scanning device |
US3093752A (en) * | 1959-08-24 | 1963-06-11 | Westinghouse Electric Corp | Function generator and frequency doubler using non-linear characteristics of semiconductive device |
US3150299A (en) * | 1959-09-11 | 1964-09-22 | Fairchild Camera Instr Co | Semiconductor circuit complex having isolation means |
US3025438A (en) * | 1959-09-18 | 1962-03-13 | Tungsol Electric Inc | Field effect transistor |
US3007119A (en) * | 1959-11-04 | 1961-10-31 | Westinghouse Electric Corp | Modulating circuit and field effect semiconductor structure for use therein |
US3084078A (en) * | 1959-12-02 | 1963-04-02 | Texas Instruments Inc | High frequency germanium transistor |
US3171068A (en) * | 1960-10-19 | 1965-02-23 | Merck & Co Inc | Semiconductor diodes |
US3158754A (en) * | 1961-10-05 | 1964-11-24 | Ibm | Double injection semiconductor device |
US3248677A (en) * | 1961-10-27 | 1966-04-26 | Ibm | Temperature compensated semiconductor resistor |
US3249828A (en) * | 1962-06-15 | 1966-05-03 | Crystalonics Inc | Overlapping gate structure field effect semiconductor device |
US3252003A (en) * | 1962-09-10 | 1966-05-17 | Westinghouse Electric Corp | Unipolar transistor |
US3229104A (en) * | 1962-12-24 | 1966-01-11 | Ibm | Four terminal electro-optical semiconductor device using light coupling |
DE1265795B (de) * | 1963-01-25 | 1968-04-11 | Ibm | Transistorschaltung zur Verwendung als Oszillator, Frequenzmodulator oder Verzoegerungskette |
DE1279853B (de) * | 1964-07-03 | 1968-10-10 | Siemens Ag | Halbleiter-Gleichrichteranordnung zur Gleichrichtung von Wechselspannungen hohen Betrages und hoher Frequenz |
US3381189A (en) * | 1964-08-18 | 1968-04-30 | Hughes Aircraft Co | Mesa multi-channel field-effect triode |
US3381187A (en) * | 1964-08-18 | 1968-04-30 | Hughes Aircraft Co | High-frequency field-effect triode device |
US3381188A (en) * | 1964-08-18 | 1968-04-30 | Hughes Aircraft Co | Planar multi-channel field-effect triode |
US3377529A (en) * | 1965-10-04 | 1968-04-09 | Siemens Ag | Semiconductor device with anisotropic inclusions for producing electromag-netic radiation |
US3409812A (en) * | 1965-11-12 | 1968-11-05 | Hughes Aircraft Co | Space-charge-limited current triode device |
GB1200379A (en) * | 1966-10-13 | 1970-07-29 | Sony Corp | Magnetoresistance element |
JPS4828114B1 (es) * | 1966-10-29 | 1973-08-29 | ||
JPS501635B1 (es) * | 1969-10-06 | 1975-01-20 | ||
US3593045A (en) * | 1969-12-29 | 1971-07-13 | Bell Telephone Labor Inc | Multiaddress switch using a confined electron beam in a semiconductor |
US5585654A (en) * | 1971-04-28 | 1996-12-17 | Handotai Kenkyu Shinkokai | Field effect transistor having saturated drain current characteristic |
JPS526076B1 (es) * | 1971-04-28 | 1977-02-18 | ||
US5557119A (en) * | 1971-04-28 | 1996-09-17 | Handotai Kenkyu Shinkokai | Field effect transistor having unsaturated drain current characteristic |
US3714473A (en) * | 1971-05-12 | 1973-01-30 | Bell Telephone Labor Inc | Planar semiconductor device utilizing confined charge carrier beams |
US3849789A (en) * | 1972-11-01 | 1974-11-19 | Gen Electric | Schottky barrier diodes |
GB1444951A (en) * | 1973-06-18 | 1976-08-04 | Mullard Ltd | Electronic solid state devices |
US4024420A (en) * | 1975-06-27 | 1977-05-17 | General Electric Company | Deep diode atomic battery |
FR2501913A1 (fr) * | 1981-03-10 | 1982-09-17 | Thomson Csf | Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor |
DE3334167A1 (de) * | 1983-09-21 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterdiode |
US4635084A (en) * | 1984-06-08 | 1987-01-06 | Eaton Corporation | Split row power JFET |
JPS61198779A (ja) * | 1985-02-28 | 1986-09-03 | Res Dev Corp Of Japan | 両面ゲ−ト静電誘導サイリスタ及びその製造方法 |
JP6981365B2 (ja) * | 2018-05-17 | 2021-12-15 | 日本電信電話株式会社 | 光検出器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2524035A (en) * | 1948-02-26 | 1950-10-03 | Bell Telphone Lab Inc | Three-electrode circuit element utilizing semiconductive materials |
US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
US2600500A (en) * | 1948-09-24 | 1952-06-17 | Bell Telephone Labor Inc | Semiconductor signal translating device with controlled carrier transit times |
NL79529C (es) * | 1948-09-24 | |||
NL154165C (es) * | 1949-10-11 | |||
US2586080A (en) * | 1949-10-11 | 1952-02-19 | Bell Telephone Labor Inc | Semiconductive signal translating device |
US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2623105A (en) * | 1951-09-21 | 1952-12-23 | Bell Telephone Labor Inc | Semiconductor translating device having controlled gain |
-
0
- BE BE517808D patent/BE517808A/xx unknown
- NL NL96818D patent/NL96818C/xx active
-
1952
- 1952-03-14 US US276511A patent/US2790037A/en not_active Expired - Lifetime
- 1952-08-20 DE DEW9285A patent/DE1007887B/de active Pending
- 1952-09-17 FR FR1068868D patent/FR1068868A/fr not_active Expired
-
1953
- 1953-03-10 CH CH330640D patent/CH330640A/fr unknown
- 1953-03-13 GB GB6978/53A patent/GB756339A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1007887B (de) | 1957-05-09 |
GB756339A (en) | 1956-09-05 |
NL96818C (es) | |
CH330640A (fr) | 1958-06-15 |
US2790037A (en) | 1957-04-23 |
FR1068868A (fr) | 1954-07-01 |