BE505814A - - Google Patents

Info

Publication number
BE505814A
BE505814A BE505814DA BE505814A BE 505814 A BE505814 A BE 505814A BE 505814D A BE505814D A BE 505814DA BE 505814 A BE505814 A BE 505814A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE505814A publication Critical patent/BE505814A/xx
Priority claimed from US184869A external-priority patent/US2792538A/en
Priority claimed from US184870A external-priority patent/US2950425A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2924/1203Rectifying Diode
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    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
BE505814D 1950-09-14 BE505814A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US184869A US2792538A (en) 1950-09-14 1950-09-14 Semiconductor translating devices with embedded electrode
US184870A US2950425A (en) 1950-09-14 1950-09-14 Semiconductor signal translating devices

Publications (1)

Publication Number Publication Date
BE505814A true BE505814A (en) 1900-01-01

Family

ID=26880550

Family Applications (1)

Application Number Title Priority Date Filing Date
BE505814D BE505814A (en) 1950-09-14

Country Status (6)

Country Link
BE (1) BE505814A (en)
CH (1) CH302296A (en)
DE (1) DE977615C (en)
FR (1) FR1038658A (en)
GB (1) GB759012A (en)
NL (2) NL90092C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1179646B (en) * 1954-10-29 1964-10-15 Westinghouse Electric Corp Surface transistor and process for its manufacture
DE977596C (en) * 1952-03-13 1967-08-03 Siemens Ag Process for the production of an area p-n rectifier or area transistor
DE1288687B (en) * 1957-06-06 1969-02-06 Ibm Deutschland Process for the production of a surface transistor with an alloyed electrode pill, from which, during alloying, contaminants of different diffusion coefficients are diffused into the basic semiconductor body

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520380A (en) * 1952-06-02
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
BE534311A (en) * 1953-12-23
CA563722A (en) * 1953-12-31 1958-09-23 N.V. Philips Gloeilampenfabrieken Semiconductor junction electrodes and method
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
DE1109270B (en) * 1954-04-07 1961-06-22 Standard Elektrik Lorenz Ag Method for melting a power supply to an alloy electrode of a semiconductor arrangement
DE1032408B (en) * 1954-06-21 1958-06-19 Siemens Ag Process for the production of p-n junctions according to the alloy or diffusion process
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
NL199836A (en) * 1954-08-23 1900-01-01
DE1107343B (en) * 1954-10-14 1961-05-25 Licentia Gmbh Method for manufacturing electrical semiconductor devices
DE1027323B (en) * 1954-12-02 1958-04-03 Siemens Ag Surface transistor and method of manufacture
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
NL106108C (en) * 1955-07-21
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2862160A (en) * 1955-10-18 1958-11-25 Hoffmann Electronics Corp Light sensitive device and method of making the same
US2847336A (en) * 1956-01-30 1958-08-12 Rca Corp Processing semiconductor devices
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
NL216614A (en) * 1956-05-15
US2845375A (en) * 1956-06-11 1958-07-29 Itt Method for making fused junction semiconductor devices
DE1100818B (en) * 1958-09-24 1961-03-02 Siemens Ag Process for the production of a semiconductor arrangement with a single-crystal, disk-shaped base body made of silicon
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE518421C (en) * 1927-02-12 1931-10-03 Kurt Brodowski Process for the manufacture of rectifiers for alternating current
GB342643A (en) * 1929-07-11 1931-02-05 British Thomson Houston Co Ltd Improvements relating to electric rectifiers
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
NL85856C (en) * 1948-02-26
BE489418A (en) * 1948-06-26
NL89623C (en) * 1949-04-01
DE840418C (en) * 1949-05-30 1952-06-05 Licentia Gmbh Process for the production of semiconductors containing defects, in particular for dry rectifiers
DE968911C (en) * 1949-06-14 1958-04-10 Licentia Gmbh Electrically controllable dry rectifier and method for its manufacture
DE976468C (en) * 1949-08-15 1963-09-19 Licentia Gmbh Method for producing an excess semiconductor from a defect semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977596C (en) * 1952-03-13 1967-08-03 Siemens Ag Process for the production of an area p-n rectifier or area transistor
DE1179646B (en) * 1954-10-29 1964-10-15 Westinghouse Electric Corp Surface transistor and process for its manufacture
DE1288687B (en) * 1957-06-06 1969-02-06 Ibm Deutschland Process for the production of a surface transistor with an alloyed electrode pill, from which, during alloying, contaminants of different diffusion coefficients are diffused into the basic semiconductor body

Also Published As

Publication number Publication date
NL162993B (en)
FR1038658A (en) 1953-09-30
NL90092C (en) 1900-01-01
DE977615C (en) 1967-08-31
CH302296A (en) 1954-10-15
GB759012A (en) 1956-10-10

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