BE445828A - - Google Patents

Info

Publication number
BE445828A
BE445828A BE445828DA BE445828A BE 445828 A BE445828 A BE 445828A BE 445828D A BE445828D A BE 445828DA BE 445828 A BE445828 A BE 445828A
Authority
BE
Belgium
Prior art keywords
selenium
emi
conductivity
manufacturing
asymmetric
Prior art date
Application number
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE445828A publication Critical patent/BE445828A/fr

Links

Landscapes

  • Physical Vapour Deposition (AREA)
BE445828D 1941-06-20 BE445828A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEA0012183 1941-06-20

Publications (1)

Publication Number Publication Date
BE445828A true BE445828A (OSRAM)

Family

ID=6922446

Family Applications (1)

Application Number Title Priority Date Filing Date
BE445828D BE445828A (OSRAM) 1941-06-20

Country Status (2)

Country Link
BE (1) BE445828A (OSRAM)
FR (1) FR882101A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970900C (de) * 1944-05-24 1958-11-13 Standard Elek K Lorenz Ag Verfahren zur Herstellung unipolarer Leiter mit Selen oder Selenverbindungen als Halbleiter
DE970899C (de) * 1948-10-02 1958-11-13 Siemens Ag Zweischichten-Trockengleichrichter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970900C (de) * 1944-05-24 1958-11-13 Standard Elek K Lorenz Ag Verfahren zur Herstellung unipolarer Leiter mit Selen oder Selenverbindungen als Halbleiter
DE970899C (de) * 1948-10-02 1958-11-13 Siemens Ag Zweischichten-Trockengleichrichter

Also Published As

Publication number Publication date
FR882101A (fr) 1943-05-18

Similar Documents

Publication Publication Date Title
DE1918556A1 (de) Verfahren zum Herstellen einer Halbleitereinrichtung
Bilmes et al. SERS from pyridine adsorbed on electrodispersed platinum electrodes
Sweeney Jr et al. Electron probe measurements of evaporated metal films
DE2713912A1 (de) Sperrschichtzelle sowie verfahren zu ihrer herstellung
Ives Photo-Electric Properties of Thin Films of Alkali Metals
BE445828A (OSRAM)
Sathaye et al. Studies on thin films of cadmium sulphide prepared by a chemical deposition method
Qamhieh et al. Steady-state photoconductivity in amorphous germanium selenide films
DE102008024517A1 (de) Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
BE468457A (OSRAM)
US8461511B2 (en) Photo-sensitive composite film, method of fabricating the same, and photo-switched device comprising the same
US2105303A (en) Photoelectric device
USRE22052E (en) Light-sensitive device
Iovu et al. Photoconductivity of amorphous Sb2Se3 and Sb2Se3: Sn thin films
Saito et al. Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)–arsenic selenide (As2Se3) multi-layered thin film
JPS6119706B2 (OSRAM)
BE438184A (OSRAM)
JPS5772368A (en) Fusing type semiconductor device and its manufacture
Khalili et al. Study of anodization parameters effects on photoconductivity of porous silicon
SU39278A1 (ru) Способ изготовление мозаичных поверхностей дл фотоэлементов
Pradhan et al. Optical properties change in Sb/As2Se3 bilayer thin film
US1940245A (en) Light sensitive cell
DE941631C (de) Selen-Sperrschicht-Photozelle
JPS60142579A (ja) 光導電性薄膜の製造方法
Takagaki Evidence for the quenching of rapid photoresponse by defect generation in ultraviolet illumination of CuSbS2 films