BE405202A - - Google Patents

Info

Publication number
BE405202A
BE405202A BE405202DA BE405202A BE 405202 A BE405202 A BE 405202A BE 405202D A BE405202D A BE 405202DA BE 405202 A BE405202 A BE 405202A
Authority
BE
Belgium
Prior art keywords
barrier layer
electrode
layer
selenium
semiconductor
Prior art date
Application number
Other languages
English (en)
French (fr)
Publication of BE405202A publication Critical patent/BE405202A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
BE405202D BE405202A (enrdf_load_stackoverflow)

Publications (1)

Publication Number Publication Date
BE405202A true BE405202A (enrdf_load_stackoverflow)

Family

ID=70423

Family Applications (1)

Application Number Title Priority Date Filing Date
BE405202D BE405202A (enrdf_load_stackoverflow)

Country Status (1)

Country Link
BE (1) BE405202A (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
Cao et al. High‐performance Langmuir–Blodgett monolayer transistors with high responsivity
US8093109B2 (en) Method for forming semiconductor thin film and method for manufacturing electronic device
EP0496672B1 (fr) Capteur pour la détection d'espèces chimiques ou de photons utilisant un transistor à effet de champ
FR2554237A1 (fr) Capteur d'humidite et son procede de fabrication
EP3025381B1 (fr) Procede de fabrication d'un module thermoelectrique a base de film polymere
JP2008016227A (ja) 有機光起電力素子およびその製造方法ならびに光センサー
BE405202A (enrdf_load_stackoverflow)
FR2577668A1 (fr) Procede de realisation d'un detecteur photoelectrique du type photoresistance de grande sensibilite
Shen et al. Heterojunction diodes of soluble conducting polypyrrole with porous silicon
US2105303A (en) Photoelectric device
Dutta et al. Electronic conduction processes in DNA-doped polypyrrole nanocomposite films
US20250236523A1 (en) Manufacturing method of laser-induced graphene and laser-induced graphene manufactured thereby
CN112885907B (zh) 一种与半导体Si集成的人工神经元及其应用
JP2014507063A (ja) トリアリールアミンの超分子集合体による電気伝導
CH118322A (fr) Elément redresseur de courants alternatifs et procédé pour sa fabrication.
JP2678830B2 (ja) 有機微粒子を分散させた高分子複合物の製造方法
BE522000A (enrdf_load_stackoverflow)
CH119067A (fr) Procédé pour la fabrication d'un élément redresseur de courant alternatif et élément redresseur obtenu d'après ce procédé.
BE416676A (enrdf_load_stackoverflow)
BE332315A (enrdf_load_stackoverflow)
CH165274A (fr) Dispositif redresseur de courant.
BE508382A (enrdf_load_stackoverflow)
CH132459A (fr) Cellule photoélectrique et procédé pour sa fabrication.
Shen et al. Fabrication and electrical properties of a Cu–tetracyanoquinodimethane nanowire array ina porous anodic alumina template
BE445299A (enrdf_load_stackoverflow)