H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
H10D48/01—Manufacture or treatment
H10D48/07—Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]
H10D48/071—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate or reduction treatment
H10D48/074—Oxidation and subsequent heat treatment of the foundation plate
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
H10P14/34—Deposited materials, e.g. layers
H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
Procédé de fabrication d'un fil stratifié de petit diamètre et en particulier d'un fil électrode pour usinage par électroérosion et fil électrode obtenu
Procede d'assemblage par resistance d'un materiau de contact sur un support metallique, contact electrique realise par un tel procede et pastille de contact utilisee