AUPR083300A0 - An isotope structure formed in an indriect band gap semiconductor material - Google Patents

An isotope structure formed in an indriect band gap semiconductor material

Info

Publication number
AUPR083300A0
AUPR083300A0 AUPR0833A AUPR083300A AUPR083300A0 AU PR083300 A0 AUPR083300 A0 AU PR083300A0 AU PR0833 A AUPR0833 A AU PR0833A AU PR083300 A AUPR083300 A AU PR083300A AU PR083300 A0 AUPR083300 A0 AU PR083300A0
Authority
AU
Australia
Prior art keywords
indriect
semiconductor material
band gap
structure formed
gap semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AUPR0833A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILEX SYSTEMS Ltd
Original Assignee
SILEX SYSTEMS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILEX SYSTEMS Ltd filed Critical SILEX SYSTEMS Ltd
Priority to AUPR0833A priority Critical patent/AUPR083300A0/en
Publication of AUPR083300A0 publication Critical patent/AUPR083300A0/en
Priority to PCT/AU2001/001305 priority patent/WO2002033758A1/en
Priority to AU2001295280A priority patent/AU2001295280A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
AUPR0833A 2000-10-17 2000-10-17 An isotope structure formed in an indriect band gap semiconductor material Abandoned AUPR083300A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AUPR0833A AUPR083300A0 (en) 2000-10-17 2000-10-17 An isotope structure formed in an indriect band gap semiconductor material
PCT/AU2001/001305 WO2002033758A1 (en) 2000-10-17 2001-10-17 An isotope structure formed in an indirect band gap semiconductor material
AU2001295280A AU2001295280A1 (en) 2000-10-17 2001-10-17 An isotope structure formed in an indirect band gap semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPR0833A AUPR083300A0 (en) 2000-10-17 2000-10-17 An isotope structure formed in an indriect band gap semiconductor material

Publications (1)

Publication Number Publication Date
AUPR083300A0 true AUPR083300A0 (en) 2000-11-09

Family

ID=3824891

Family Applications (1)

Application Number Title Priority Date Filing Date
AUPR0833A Abandoned AUPR083300A0 (en) 2000-10-17 2000-10-17 An isotope structure formed in an indriect band gap semiconductor material

Country Status (2)

Country Link
AU (1) AUPR083300A0 (en)
WO (1) WO2002033758A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7119400B2 (en) * 2001-07-05 2006-10-10 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
WO2015117003A1 (en) 2014-01-31 2015-08-06 The Regents Of The University Of California Electric field control element for phonons
CN111960471B (en) * 2020-08-06 2022-10-25 天津理工大学 Method for regulating and controlling two-dimensional crystal band gap

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63208056A (en) * 1987-02-24 1988-08-29 Toshiba Corp Electrophotographic sensitive body
JPH0541355A (en) * 1991-08-05 1993-02-19 Fujitsu Ltd Modulation semiconductor material and semiconductor device using same
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
JPH09106946A (en) * 1995-10-11 1997-04-22 Mitsubishi Electric Corp Semiconductor device, semiconductor laser and high-electron mobility transistor device
JPH11297624A (en) * 1998-04-08 1999-10-29 Japan Science & Technology Corp Thin-film element and its manufacture

Also Published As

Publication number Publication date
WO2002033758A1 (en) 2002-04-25

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