AU766260B2 - Nitride semiconductor device - Google Patents

Description

P/00/01 1 Regulation 3.2

AUSTRALIA

Patents Act 1990

ORIGINAL

COMPLETE SPECIFICATION STANDARD PATENT Invention Title: Nitride semiconductor device The following statement is a full description of this invention, including the best method of performing it known to us: Freeh~IIs Carter Smith Beadle Melbourne\003969281 Printed 20 December 2001 (14:42) page 3 Freehills Carter Smith Beadle Melbourne\003969281 Printed 20 December 2001 (14:42) page 3 003968874 1IA NITRIDE SEMICONDUCTOR DEVICE Technical field of the Invention This invention relates to a device provided with a nitride semiconductor including light emitting devices such as LED (light emitting diode), LD (laser diode) and SLD (super luminescent diode), solar cells, light receiving devices such as optical sensors and electronic devices such as transistors and power devices.

Background of the Invention Nitride semiconductors have been recently produced as materials used for a high bright blue LED and a pure green LED, a full color LED display and a traffic signal LED. Such LEDs are provided with an active layer of SQW (Single Quantum Well) or MQW (Multi Quantum Well) where the well layer is made of InGaN and positioned between a p-type nitride layer and an n-type nitride layer to form a DH (Double Hetero) structure. The wavelength of the blue or green light emitting from the active layer depends on a ration of In in the InGaN well layer.

15 The inventors have first realized laser emitting by using the above nitride materials and reported it in Jpn. J. Appl. Phys. 35(1996)L74 and Jpn. J. Appl.

:Phys. 35(1996)L217. The laser device comprises DH structure where the active layer is MQW having InGaN well layers and showed the following data: Threshold current: 610mA; Threshold current density: 8.7kA/m2; Wavelength: 410 nm (pulse width 2 pm and pulse cycle 2ms) The inventors have further improved the laser device and reported it in Appl. Phys. Lett. 69(1996)1477. The laser device comprises a ridge strip structure formed on a part of p-type nitride semiconductor and showed the following data.

Threshold.current: 187mA; Threshold current density: 3kA/m2; Wavelength: 410 nm (pulse width 2 pm, pulse cycle 2ms and duty ratio: 0.1%) The inventors have first succeeded in CW (Continuous- Wave) Oscillation or Operation at room temperature and reported it in Gijutsu-Sokuho of Nikkei Electronics issued on Dec. 2, 1996, Appl. Phys. Lett. 69(1996) and Appl. Phys. Lett. 69(1996)4056.

The laser diode showed a lifetime of 27 hours at 20"C under the threshold current density of 3.6 ka/cm', the threshold voltage of 5.5 V and the output of 1.5 mW.

20 On the otherhand, the blue and green LED of nitrides showed a forward current (If) of 20 mA and a forward voltage (Vf) of 3.4 to 3.6 V which are higher by 2 V or more than those of red LEDs made of GaAlAs semiconductors. Therefore, further decrease of Vf in the blue and green LED was required. Additionally, there was required an effective LD which can decrease the threshold current and voltage to get a longer lifetime of CW operation at room d04302740 3 temperature, because the conventional LD still had a higher threshold current and voltage.

The inventors have gotten the idea that technology of decreasing the threshold in LDs was applicable to LEDs in order to decrease the Vf. Therefore, a first object of the present invention is to decrease the threshold current and voltage of nitride semiconductor LDs and realize a longer lifetime of CW operation.

In the specification, it should be understood that the general formulae: InxGalxN and AlyGalyN show chemical atoms which compose of nitride layers and therefore, even if different layers are represented by the same formula, the different layers do not necessarily have the same composition, that is, the same X or Y does not mean the same ratio.

Disclosure of the invention O o In a first aspect of the present invention, there is provided a nitride semiconductor device comprising an n-type semiconductor region comprising one 15 or more nitride semiconductor layers, a p-type semiconductor region comprising o one or more nitride semiconductor layers and an active layer of nitride semiconductor positioned between said n-type semiconductor region and said ptype semiconductor region.

In one form of the first aspect of the invention, at least one nitride 20 semiconductor layer in said n-type semiconductor region is an n-side super lattice selected from a group consisting of a super lattice layer comprising a plurality of first nitride semiconductor layers and a plurality of second nitride semiconductor layers both doped with n-type impurity having a first and second impurity concentrations, respectively, the first impurity concentration being larger than the second impurity concentration, 004333680(, 3a a super lattice layer comprising a plurality of first nitride semiconductor layers and a plurality of second nitride semiconductor layers both doped with n-type impurity having a first and second impurity concentrations, respectively, the first impurity concentration being lower than the second impurity concentration, a super lattice layer comprising a plurality of first nitride semiconductor layers undoped with n-type impurity and a plurality of second nitride semiconductor layers doped with ntype impurity and, a super lattice layer comprising a plurality of first nitride semiconductor layers doped with n-type impurity, and a plurality of second nitride semiconductor layers undoped with n-type impurity, each of said first nitride semiconductor layers and each of said second nitride semiconductor layers being laminated alternately.

In another form of the first aspect of the invention, at least one nitride semiconductor layer in said p-type semiconductor region is a p-side super lattice selected from a group consisting of a super lattice layer comprising a plurality of third nitride semiconductor layers and a plurality of fourth nitride semiconductor layers both doped with n-type impurity having a third and fourth impurity concentrations, respectively, the first impurity concentration being larger than the second impurity 25 concentration, a super lattice layer comprising a plurality of third nitride S"semiconductor layers and a plurality of fourth nitride semiconductor layers both doped with n-type impurity having a 004333650,, 3b third and fourth impurity concentrations, respectively, the third impurity concentration being lower than the fourth impurity concentration, a super lattice layer comprising a plurality of third nitride semiconductor layers undoped with p-type impurity and a plurality of fourth nitride semiconductor layers doped with ptype impurity and, a super lattice layer comprising a plurality of third nitride semiconductor layers doped with p-type impurity and a plurality of fourth nitride semiconductor layers undoped with ptype impurity, each of said third nitride semiconductor layers and each of said fourth nitride semiconductor layers being laminated alternately.

Both of these forms are present in an embodiment of the invention.

In a preferred embodiment, the super lattice layer is made by laminating first layers which is made of a nitride semiconductor and has a thickness of not more than 100 angstroms and second layers which is made of a nitride semiconductor having different constitutions from the first layer and has a S: thickness of not more than 100 angstroms.

In order to keep or confine carriers in the active layer, at least one of the first and second layers is preferably made of a nitride semiconductor containing Al, especially AIyGaiyN (0<YI1).

.9 e et Brief Explanation of the Drawing Fig.i is a schematic sectional view of the nitride semiconductor device (LED) structure of the first embodiment according to the present invention, Fig.2 is a schematic sectional view of the nitride semiconductor device (LD) structure of the second embodiment according to the present invention, Fig.3 is a schematic sectional view of the nitride semiconductor device (LD) structure of the third embodiment according to the present invention, Fig.4 is a perspective view of the LD shown in Fig.3 is a graph showing the relation between, the thickness of the p-side contact layer and the threshold voltage in Example 1 of the present invention, Fig.6 is a schematic sectional view of the LD in Examle 26 of the present invention, Fig.7 is a schematic sectional view of the LD in Example o 28 of the present invention, Fig. 8 is a schematic sectional view of the LD in Example 20 33 of the present invention, Fig.9 is a schematic view of the nitride semiconductor device (LD) structure of the fourth embodiment according to the present invention.

PREFERRED EMBODIMENT OF THE INVENTION Preferred embodiments of the nitride semiconductor device according to the present invention will now be described below with reference to the accompanying drawings.

Embodiment 1 Fig. 1 is a schematic cross sectional view showing the configuration of the nitride semiconductor device according to the first embodiment of the present invention. The nitride semiconductor device is an LED device having such a basic configuration as a buffer layer 2 made of GaN, an n-side contact layer 3 made of Si-doped n-type GaN, an active layer 4 made of InGaN of single quantum well structure, a p-side cladding layer made of a super lattice layer comprising a first layer and a second layer of different constitutions being laminated, and a p-type contact layer 6 made of Mg-doped GaN are laminated .'oo successively on a substrate 1 made of sapphire. In the nitride semiconductor device of the first embodiment, nearly entire surface of the p-side contact layer 6 is covered with a planar electrode 7 formed thereon which is provided with a p electrode 8 for the purpose of bonding installed on the surface thereof, *ooo while an n electrode 9 is installed on the surface of the n-side contact layer 2 which is exposed by removing a part of nitride .semiconductor layer by etching. The planar electrode 7 allows light to transmit.

The nitride semiconductor device of the first embodiment has the p-type cladding layer 5 having a low resistance and comprising a super lattice layer made by laminating the first layer which is made of AlyGaj_-N (0!Y51) doped with Mg as a ptype impurity, for example, and has a thickness of 30 angstroms, and a second layer which is made of p-type AlyGa_,yN (0Y l) doped with the same amount of Mg as in the first layer as the p-type impurity and has a thickness of 30 angstroms, and therefore Vf can be made lower. When the super lattice layer is formed on the p layer side as described above, the super lattice layer is rendered p-type conductivity by doping the first layer and/or the second layer with ap-type impuritysuchas Mg, Zn, Cd, Be, etc. The first layer and the second layer may be laminated either in the order of 1st, 2nd, 1st and so on, or in the order of 2nd, 1st, 2nd and so on, provided that at least two layers are laminated.

The first layer and the second layer which is made of the nitride semiconductor and constitute the super lattice layer are S..o .not limited to the layer made of InGa 1 (0X51) and the layer made of AlyGa 1 _N and may be other layers provided that .they are made of nitride semiconductors of different constitutions.

The first layer and the second layer may or may not have the same band gap energy. For example, -when the first layer is made of *oo* InxGa_-xN (0Y:l) and the second layer is made of AlyGa 1 (0<Y 20 band gap energy of the second layer becomes higher than that of the first layer, although when the first layer is made of InxGa 1 xN (0X_1) and the second layer is made of InzAl 1 _zN (0<Z the first layer and the second layer may be of different constitutions but have the same band gap energy. Also when the first layer is made of AlGa 1 _yN (05Yl) and the second layer is made of InzAl_zN the first layer and the second layer may be of different constitutions but have the same band gap energy.

That is, according to the present invention, the first layer and the second layer may or may not have the same band gap energy, provided that they constitute a super lattice layer which has a function to be described later. As described above, the super lattice layer referred to herein is a layer made by laminating extremely thin layers of different constitutions, which is free from lattice defects accompanying lattice mismatch, because every layer is very thin, having broad implications including the quantum well structure. Although the super lattice layer does not have inner defects, it usually has a strain accompanying lattice e g. mismatch, and is hence called also a stained layer super lattice.

According to the present invention, the first layer and the second layer remain to be nitride semiconductors as long as they include N even when part of N (nitrogen) atoms are substituted with V group -elements such as As and P.

eve* According to the present invention, because the thickness of the first layer and the second layer which constitute the super lattice layer reaches the elastic strain limit or greater when it is greater than 100 angstroms, and microscopic cracks or crystal defects are likely to be generated in the film, and therefore the thickness is preferably set to within 100 angstroms. Lower limit of the thickness of the first layer and the second layer is.not limited and may be of any value provided that it is monoatomic layer or thicker. According to the first embodiment, the first layer and the second layer are preferably 70 angstroms or thinner to obtain better quality of crystal and, more preferably, further thinner in a range from 10 angstroms to 40 angstroms. According to the present invention, although the thickness may be angs.troms or less (for example, monoatomic layer or diatomic layer) setting the thickness within 10 angstroms leads to lamination of too many layers in case a cladding layer having the thickness of 500 angstroms or greater is formed in super lattice structure, for example, resulting in longer forming time and increased labor in the manufacturing process. Thus the first layer and the second layer are preferably set to be thicker than 10 angstroms.

oo In the case of the nitride semiconductor device of the first embodiment shown in Fig. 1, the p-type cladding layer 5 made of super lattice layer is formed between the active layer 4 and the p-side contact layer 6 which is a current injection layer, 15 and functions as a carrier trapping layer. When a super lattice layer is used as a carrier trapping layer in this way, mean band gap energy of the super lattice layer must be higher than that of the active layer. In a nitride semiconductor device, therefore, a nitride semiconductor which includes Al in such a form as AlN, 20 AlGaN or InAlN having relatively high band gap energy is used as a carrier trapping layer. Among such layers, AlGaN has a tendency to develop cracks during crystal growing process when grown to be thick as a single layer-.

In the first embodiment, therefore, a super lattice layer having less cracks with excellent quality of crystal is formed and used as a cladding layer having a high band gap energy, by making at least one of the first layer and the- second layer from a nitride semiconductor which includes at least Al, preferably AlyGa_-yN and growing the first layer and the second layer alternately with the thickness within the elastic strain limit.

In this case, when a nitride semiconductor layer which does not include Al is grown as the first layer to the thickness within 100 angstroms and the second layer made of a nitride semiconductor which includes Al is grown thereon, the first layer also functions as a buffer layer when growing the second layer so that cracks are less likely to develop in the second layer, making it possible to form a super lattice layer which has less cracks with excellent quality of crystal. Thus according to the first embodiment, it is desirable that the super lattice layer be formed from the first layer (the second layer) made of InxGa_.N 15 and the second. layer (the first layer) made of AlyGa_-yN (0_-OYl1, Also in the nitride semiconductor device of the first embodiment, at least one of the first layer and the second layer which constitute the p-side cladding layer 5, that is the super 20 lattice layer, is preferably doped with a p-type impurity which makes the conductivity of the layer p-type, for the purpose of adjusting the carrier concentration. In case the first layer and the second layer are doped with a p-type impurity, the first layer and the second layer may be doped in different concentrations.

This is because, when the first layer and the second layer are doped in different concentrations, carrier concentration in one of the layers becomes substantially higher, thus making it possible to decrease the resistance of the super lattice layer as a whole.

Thus according to the present invention, the first layer and the second layer may .be doped in different concentrations, or alternatively, only one of the first layer and the second layer may be doped.

Concentrations of the impurity doped in the first layer and the second layer are preferably controlled in a range from 1X1016/cm 3 tol 1X1O0 2 /cm, more preferably from 1X1lO/cm 3 to 1 Xl1On/cm 3 and most preferably from 1 X 10/cm 3 to 2 X 10 20 /cm3 in the case of p type impurity, although the present invention is not limited to this configuration. This is because, when impurity concentration is lower than 1X10 1 6 /cm 3 it becomes difficult to obtain the effect of reducing Vf and the threshold voltage and, 15 when impurity concentration is higher than 10 22 /cm 3 quality of ""crystal of the super lattice layer deteriorate. Concentration of n type impurity is also desired to be controlled within a similar range, for the same reason.

The super lattice layer constituted as described above 20 is formed by laminating the first layer and the second layer alternately with the thickness within the elastic strain limit, and therefore lattice defects of the crystal can be reduced and microscopic cracks can be reduced, thus improving the quality of crystal drastically. As a result, the amount of impurity doped can be increased thereby increasing the carrier concentrations in the n-type nitride semiconductor layer and in the p-type nitride

I

11 semiconductor layer without substantially -deteriorating the quality of crystal, thus allowing the carrier to move without being scattered by crystal defects, and therefore it is made possible to reduce the resistivity at least one order of magnitude lower than that of the p-type or n-type nitride semiconductor which does not have super lattice structure.

Thus in the nitride semiconductor device (LED device) of the first embodiment, Vf can be reduced by forming the p-type cladding layer 5, of a semiconductor region 251 of p conductivity side (the region comprising the p-type cladding layer 5 and the p-type contact layer 6 in the first embodiment) where it has been difficult to obtain a nitride semiconductor layer having a low resistance in the prior art, by using the super lattice layer, thereby reducing the resistance of the p-type cladding layer 15 That is, nitride semiconductor is a semiconductor which is difficult to obtain in the form of p-type crystal and, if ever obtained, resistivity is usually at least two orders of magnitude higher compared to n-type nitride semiconductor. Therefore, when a super lattice layer of type p is formed on p-type conductivity side, resistance of the p-type layer constituted from the super lattice layer can be reduced to an extremely low level, resulting in a remarkable decrease inVf. As a prior art technology to obtain a p-type crystal, such a process has been known where a nitride semiconductor layer doped with a p-type impurity is annealed and hydrogen is removed thereby manufacturing a p-type nitride semiconductor (Japanese Patent No. 2540791) However, the p-type nitride semiconductor thus obtained has resistivity as high as several ohm-centimeters at the lowest. By turning this p-type layer into p-type super lattice layer, better quality of crystal can be obtained. According to the study of the present inventors, resistivity of the p-type layer can be reduced to a level at least one order of magnitude lower than that of the prior art, resulting in a conspicuous effect of decreasing Vf.

According to the first embodiment, a super lattice layer which has good quality. of crystal and is free from cracks can be formed by constituting the first layer (the second layer) made from InxGal,_N and the second layer (the first layer) made from AlGa,-yN (0Y_51, X*Y=0) as described above, and therefore service life of the device can be elongated.

Now the present invention will be compared with examples 15 of the prior art disclosed in literature known to the public, including Japanese Patent Publication filed by the present inventors in the past.

As a technology similar to the present invention, the present inventors proposed the technology disclosed in Japanese Patent Non-examined Patent Publication No. 8-228048. This technology forms a multi-layer film made of AlGaN, GaN, InGaN, etc. as a laser beam reflecting film on the outside of an n-type cladding layer and/or the outside (on the side farther from an active layer) of a p-type cladding layer which interpose the active layer. According to this technology, because the multi-layer film is formed as the light reflecting film, each layer is designed 13 to have a thickness of X/4n (n is a refractive index of the nitride semiconductor and X is a wavelength) and becomes very thick. Thus each layer of the multi-layer film has the thickness not within the elastic strain limit. U.S. Patent. 5,146,465 discloses a laser device.having such a constitution as an active layer is interposed between mirrors made of AlxGa 1 _xN/AlyGajyN. This technology, similarly to that described above, makes AlGaN/AlGaN act as mirrors, and therefore requires each layer to be thick.

Particularly it is very difficult to laminate many layers of hard semiconductor such as AlGaN without generating cracks.

According to the first embodiment, unlike the technologies described above, the first and the second layers are set to have such the thickness (preferably within 100 angstroms, namely within the critical film thickness for both layers) so as 15 to constitute a super lattice layer. That is, the present invention utilizes the effect of strained layer super lattice of a nitride semiconductor which constitutes the super lattice layer, thereby to improve the quality of crystal and reduce Vf.

Japanese Non-examined Patent Publication Nos. 5 20 110138 and 5-110139 disclose a method to obtain a crystal of AlyGa 1 .yN by laminating thin films of AIN and GaN. This technology is to laminate A1N and GaN layers which are several tens of angstroms thick thereby to obtain a mixed crystal of Al1GaiyN having a specified mix proportion, and is different from the technology of this invention. And because the technology does not include an active layer made of InGaN, the super lattice layer is liable 14 to cracks developing therein. Japanese Non-examined Patent Publication Nos. 6-21511 and No. 6-268257 also disclose a light emitting device of double-hetero structure having an active layer of multiple quantum well structure made by laminating GaN and InGaN or InGaN and InGaN. This technology is also different from the.

present invention which proposes a technology of making a multi-layer structure other than the active layer. Japanese Non-examined Patent Publication No. 2-288371 patent 005, 057) discloses a structure having a super lattice layer other than the active later. However, the supper lattice disclosed in Japanese Non-examined Patent Publication No. 2-288371 consist of BP layers and GaA1N layers while the supper lattice of present invention consist of nitride semiconductor layers having different constitution each other.

15 Therefore, this technology is different from the present invention with regard to structure and an effect.

Further in the device of the present invention, the effect of the super lattice layer becomes conspicuous when the active layer is provided with a nitride semiconductor, which includes 20 at least indium, such as InGaN. InGaN active layer has less band gap energy and is most suitable for the active layer of a nitride semiconductor device. Therefore, when super lattice layers comprising InGa 1 and AlGa 1 _yN are formed to interpose the active layer, difference in the band gap energy and difference in refractive index from th6se of the active layer can be increased, thereby making the super lattice layer capable of functioning as an excellent light trapping layer when forming a laser device (applied to the nitride semiconductor device of second embodiment) Moreover, because InGaN has quality of crystal of being softer than other nitride semiconductors which include Al such as AlGaN, use of InGaN as the active layer makes the laminated nitride semiconductor layers less liable to cracks. Conversely, use of a nitride semiconductor such as AlGaN as the active layer makes it likely that cracks develop in the entire crystal because the crystal is hard in nature.

According to the first embodiment, it is desirable that the thickness of the p-side contact layer 6 be controlled to within 500 angstroms, more preferably within 300 angstroms and most preferably within 200 angstroms. This is because resistivity can be further decreased by controlling the thickness of the p-type 15 nitride semiconductor which has a high resistivity of several ohm-centimeters or higher within 500 angstroms, thus reducing the threshold current and voltage. It is also made possible to increase the amount of hydrogen removed from the p-type layer, thereby further reducing the resistivity.

20 As described above in detail, in the nitride semiconductor device (LED device) of the first embodiment, the p-type cladding layer 5 is constituted from the super lattice layer made by laminating the first layer and the second layer, and therefore resistance of the p-type cladding layer 5 can be made extremely low and the forward voltage Vf of the LED device can be reduced.

Although the first embodiment uses the super lattice layer 16 in the p-side cladding layer 5, the present invention is not limited to this configuration and a p-type super lattice layer may also be used in the p-type contact layer 6. That is, the p-type contact layer 6 to which.current (positive holes) is injected may also be made as p-type super lattice layer formed by laminating the first layer made of InxGalKN and the second layer made of AlyGa 1 When the p-type contact layer 6 is made as a super lattice layer and the band gap energy of the first layer is less than that of the second layer, it is preferable that the first layer made of InxGalxN or GaN having a low band gap energy be placed on the top and put into contact with the p electrode, so that the contact resistance with the p electrode becomes lower thereby providing better ohmic contact. This is because the first layer which has lower band gap energy has a tendency to provide a nitride 15 semiconductor layer of higher carrier concentration than in the case of the second layer. Also according to the present invention, when a p-type nitride semiconductor layer other than the p-side cladding layer and the p-side contact layer is further formed on the semiconductor region 251 of p conductivity side, the p-type 20 nitride semiconductor layer may be constituted from a super lattice layer.

Although the first embodiment uses the super lattice layer in the p-side cladding layer5, the present invention is not limited to the configuration of the semiconductor region 251 of p-type conductivity, and an n-type super lattice layer may also be used in the n-type contact layer 3 of the semiconductor region 201 of 17 n conductivity side. In such a case as the n-type contact layer 3 is used as the super lattice layer, the first layer and/or the second layer can be doped with an n-type impurity such as Si and Ge, for example, thereby forming a super lattice layer having n-type conductivity as the n-type contact layer 3 between the substrate 1 and the active layer 4. In this case, it was verified that making the n-type contact layer 3 in the form of super lattice layer having different impurity concentration, in particular, decreases the resistance in the transverse direction and tends to decrease the threshold voltage and current in a laser diode, for example.

This is supposed to be due to an effect similar to HEMT (High-Electron Mobility Transistor) as described below, in case a super lattice layer, which is made by doping a layer having higher 15 band gap energy with greater amount of n-type impurity, is formed Sas n-type contact layer. In the super lattice layer made by laminating the first layer (the second layer) which is doped with an n-type impurity and has a greater band gap and the second layer (the first layer) which is undoped (state of being not doped will 20 be called undoped hereinafter) and has less band gap, the layer having higher band gap energy is depleted in the interface between the layer doped with the n-type impurity and the undoped layer, and electrons (two dimensional electron gas) accumulate in the interface around the layer which has lower band gap energy and a thickness of about 100 angstroms. It is supposed that, because the two dimensional electron gas is generated in the layer having 18 lower band gap energy, the electrons move without being scattered by the impurity, and therefore electron mobility in the super lattice layer increases and resistivity decreases.

Also according to the present invention, when an n-side cladding layer is installed on a semiconductor layer 201 of n conductivity side, the n-side cladding layer may be made in super lattice layer. In case an n-type nitride semiconductor layer other than the n-side contact layer and the n-side cladding layer is installed in a semiconductor region 201 of n conductivity side, the n-type nitride semiconductor layer may be made in the form of super lattice layer. However, it is a matter of course that, o..

in case the nitride semiconductor layer comprising the super lattice layer is installed in the semiconductor region 201 of n conductivity side, it is desirable that either the n-type cladding 15 layer acting as a carrier trapping layer or the n-type contact layer 3 to which current (electrons) is injected be made in super lattice structure.

In case a super lattice layer is formed in the semiconductor region 201 of n conductivity side placed between 20 the active layer 4 and the substrate 1 as described above, the first layer and the second layer which constitute the super lattice layer may not be doped with impurity. This is because nitride semiconductor has a nature of becoming n-type even when undoped.

It is desirable, however, to dope the first layer and the second layer with n-type impurity such as Si and Ge to make a difference in the impurity concentration as described above, even when forming on the n layer side.

When a super lattice layer is formed in the semiconductor region 201 of n conductivity side, the effect thereof will be an improvement in the quality of crystal similarly to the case of forming the super lattice layer in the semiconductor region 251 of p-type conductivity side. Specifically, in the case of a nitride semiconductor device which has hetero junction, carrier trapping layers of n-type and p-type are usually constituted from AlGaN which has a band gap energy which is higher than the active layer. Crystal of AIGaN is very difficult to grow, and cracks tend to develop in the crystal when a layer having the thickness of 0.5 pm or greater is grown with a single constitution. However, when a super lattice layer is made by laminating the first layer and the second layer each with a thickness within the elastic strain 15 limit, as in the case of the present invention, the first layer and the second layer can be laminated with good quality of crystal :and therefore a cladding layer having good quality of crystal can be grown. Thus because the nitride semiconductor is given good quality of crystal all over the semiconductor region 201 of n 20 conductivity side, mobility can be increased throughout the semiconductor region 201 of n conductivity side and therefore Vf of a device wherein the super lattice layer is used as a cladding layer can be decreased. Further, when the super lattice layer is doped with an impurity such as Si and Ge and the super lattice layer is used as the contact layer, it is supposed that the effect similar to that of HEMT described previously appears markedly, making it possible to decrease the threshold voltage and Vf further.

Also according to the present invention, the super lattice layer may not be doped with the impurity which determines the conductivity types of the first layer and the second layer. The super lattice layer which is not doped with the impurity may be formed as any of the layers between the active layer and the substrate, in case the layer is in the semiconductor region 201 of n conductivity side, and may be formed as any of the layers between the carrier trapping layer (light trapping layer) and the .000 active layer, provided that the layer is in the semiconductor region 251 of p conductivity side.

i'.00 According to the present invention, as described above, because the super lattice layer is used either as the cladding 15 layer acting as a carrier trapping layer formed in the Ssemiconductor regon 201 of n conductivity side or in the semiconductor region 21 of p conductivity side interpos in the semiconductor region 251 of p conductivity side interposing the active layer, or as an optical waveguide layer of the active layer or as a current injection layer provided with an electrode being formed in contact therewith, it is desirable that mean band gap energy of the nitride semiconductor constituting the super lattice layer be controlled to be higher than that of the active layer.

While the region comprising the nitride semiconductor layers placed between the active layer and the p electrode is referred to as the semiconductor region on p conductivity side in this specification, this does not mean that all the nitride semiconductor layers constituting the semiconductor region have.

the p-type conductivity. Similarly, the region comprising nitride semiconductor layers between the active layer and a GaN subs.trate 100 is referred to as the semiconductor region of n-side conductivity, this does not mean that all the nitride semiconductor layers constituting the region have the p-type conductivity.

Embodiment 2 Now the second embodiment of the present invention will be described below.

Fig. 2 is a schematic cross sectional view (cross section perpendicular to the direction of propagation of laser light) showing the configuration of a nitride semiconductor device 9 according to the second embodiment of the present invention. The nitride semiconductor device is, for example, a nitride 15 semiconductor laser diode device which has an active layer 16 comprising a nitride semiconductor interposed by a semiconductoi region 202 of n conductivity side (consisting of an n-side contact layer 12, a crack preventing layer 13, an n-side cladding layer 14 and an n-side optical waveguide layer 15) and a semiconductor 20 region 252 of p conductivity side (consisting of a cap layer 17, a p-side optical waveguide layer 18, a p-side cladding layer 19 and a p-side contact layer 20) provided on a C plane of a substrate made of sapphire or the like.

In the nitride semiconductor device of the second embodiment, threshold voltage of the nitride semiconductor device which is a laser diode is set to a low level by forming the n-side cladding layer 14 in the semiconductor region 202 of n conductivity side in the form of super lattice layer and forming the p-side cladding layer 19 in the semiconductor region 252 of p conductivity side in the form of super lattice layer. The nitride semiconductor device according to the second embodiment of the present invention will be described in detail below by referring to Fig. 2.

In the nitride semiconductor device of the second embodiment, first the n-side contact layer 12 is formed on the substrate 10 via a buffer layer 11 and a second buffer layer 112, then the crack preventing layer 13, the n-side cladding layer 14 .and the n-side optical waveguide layer 15 are laminated on the °eoon-side contact lay er 12, thereby to form the semiconductor region of n conductivity side.. Formed On the surfaces, of the n-side ooe o contact layer 12 exposed on both sides of the crack preventing 15 layer"13 are n-side electrodes 23 which make ohmic contact with othe n-side contact layer 12, while an n-side pad electrode for the purpose of wire bonding, for example, is formed on 'the nelectrode 23. Then the active layer 16 made of a nitride semiconductor is formed on the n-side opticalwaveguide layer 20 and the cap layer 17, the p-side optical wavequide layer. 18, the oo p-side cladding layer 19 and the p-side contact layer 20 are formed on the active layer 16, thereby to form the semiconductor region 252 of p conduct ivity side.. Further on the p-side contact layer the p-side electrode 21 which makes ohmic contact with the p-side contact layer 20 is formed, and the p-side pad electrode for the purpose of wire bonding, for example, is formed on the p-side electrode 21. Formed on the p-side contact layer 20 and the p-side cladding layer 19 is a ridge which extends long in the direction of resonance, thereby to trap light in the active layer 16 in the transverse direction (direction perpendicular to the direction of propagation) and form a resonator which resonates in the longitudinal direction of the ridge by using a cleavage plane which is at right angles to the ridge, thus making the laser oscillate.

Components of the nitride semiconductor device of the second embodiment will now be described below.

(Substrate The substrate 10 may be made of, in addition to sapphire having principal plane in C plane, sapphire having principal plane in Rplane orA plane, insulating substrate such as spinel (MgA20 4 15 or other semiconductor substrate such as SiC (including 6H, 4H and 3C), ZnS, ZnO, GaAs and GaN.

(Buffer layer 11) The buffer layer 11 is formed by growing A1N, GaN, AlGaN, InGaN, etc., for example, at a temperature within 900°C to a 20 thickness of several tens to several hundreds of angstroms While the buffer layer 11 is formed for the purpose of relaxing lattice constant mismatch between the substrate and the nitride semiconductor, it may be omitted depending on the method of growing the nitride semiconductor, type of substrate and other conditions.

(Second buffer layer 112) The second buffer layer 112 is a layer made of a single crystal nitride semiconductor which is grown on the buffer layer 11 at a temperature higher than that of the buffer layer, and is formed to be thicker than the buffer layer 11. The second buffer layer 112 is made as a layer which has a concentration of n-type impurity lower than that of the n-side contact layer 12 to be grown next, or as a nitride semiconductor layer which is not doped with an n-type impurity. The second buffer layer 112 maybe constituted as InxAlyGa 1 ._yN (0 X, 0 Y, X+Y 1) for example, of which composition is not a matter of importance here, but the composition 10 is preferably in the form of AlyGa.yN which is undoped and has a proportion of Al (value of Y) within 0.1, and most preferably undoped GaN. When made in such a composition, the second buffer layer 112 having few defects can be grown and, when the second buffer layer 112 is made in the form of undoped GaN, the second buffer layer 112 having fewest defects can be formed. Also it is further preferable that the n-side contact layer 12 be formed in super lattice structure.

When the second buffer layer 112 having low impurity concentration and few defects is grown before growing the n-side contact layer 12, as described above, the n-side contact layer 12 having a high carrier concentration and few defects can be formed with a relatively larger thickness. That is, while the n-side contact layer 12 having a high carrier concentration needs to be formed by growing a nitride semiconductor of a high n-type impurity concentration, it is difficult to grow a thick nitride O=semicoductor layer having a high impurity concentration with few defect. Thus when the n-side contact layer 12 is formed without forming the n-side buffer layer 112, not only the n-side contact layer 12 having many defects is formed but also other nitride semiconductor such as active layer comes to be grown on the n-side contact layer having many defects, causing the layer to be formed thereon to include crystal defect extending from the layer below, making it impossible for the layer (active layer or the like) to be formed thereon to grow with few defects. Therefore, the second buffer layer 112 has important roles in growing the n-side contact layer to be formed thereon with few defects as well as in forming the semiconductor layers which constitute the nitride semiconductor device with few defect.

Thickness of the second buffer layer 112 is preferably controlled to be 0.1 um or grater, more preferably 0.5 pm or grater, and most preferably in a range from 1 pm to 20 pim. When the second buffer layer 112 is thinner than 0.1 m, substantial improvement in the quality of crystal of the n-side contact layer 12 cannot be expected. When the second buffer layer 112 is thicker than um, on the other hand, the second buffer layer 112 itself tends to include much crystal defects resulting in decreased effect of buffer layer. When the second buffer layer 112 is grown to be relatively thick to an extent that does not exceed 20 um, there is an advantage of improved heat dissipation. That is, when a laser device is made, heat is more easily transmitted in the secondbuffer layer 112 and therefore life of the laser device is elongated.

Moreover, leaking light from the laser light diffuses in the second buffer layer 112, thereby making it easier to obtain laser beam having near elliptical configuration. The second buffer layer 112 may be omitted when an electrically conductive substrate such as GaN, SiC, ZnO or the like is used as the substrate.

(n-side contact layer 12) The n-side contact layer 12 acts as a contact layer whereon a negative electrode is formed, of which thickness is preferably controlled within a range from 0.2 m to 4 um. When the thickness is less than 0.2 pm, it becomes difficult to control the etching.

10 rate for exposing the layer in a subsequent process of forming the negative electrode. When the thickness is greater than 4 pm, on the other hand, quality of crystal tend to become poorer due to impurity. The n-side contact layer 12 is made of, for example, GaN doped with Si. Doping concentration of n-type impurity in the 15 nitride semiconductor of the n-side contact layer 12 is preferably in a range from 1X10 1 7 /cm 3 to 1X10 2 /cm 3 and more preferably from 1X101/cm 3 to 1Xl01/cm 3 When the concentration is lower than 1 X. X10 /cm 3 satisfactory ohmic contact with the n electrode material cannot be obtained and therefore threshold current and voltage cannot be decreased in a laser device. When the concentration is higher than 1X10 21 /cm 3 leak current in the device increases and the quality of crystal deteriorate, resulting in a shorter device life. It is desirable to set the impurity concentration in the n-side contact layer 12 higher than that of the n-cladding layer 14 thereby to increase the carrier concentration in the n-side contact layer 12, in order to reduce the ohmic contact resistance with the n electrode 23. When an electrically conductive substrate such as GaN, SiC, ZnO or the like is used as the substrate and the negative electrode is installed on the back of the substrate, the n-side contact layer 12 acts as a buffer layer, not as a contact layer.

At least one of the second buffer layer 11 .and the nside contact layer 12 may also be made in super lattice structure, in which case quality of crystal of the layer are drastically improved and the threshold current can be decreased. Preferably 10 the n-side contact layer 12 which is thinner than the second buffer layer 11 is made in super lattice structure. When the n-side contact layer 12 is made in such a super lattice structure that the first layer and the second layer having different levels of band gap energy are laminated, contact resistance with the n 15 electrode 23 can be decreased and the value of threshold can be decreased by exposing the layer having lower band gap energy thereby to form the n electrode 23. As materials to make the n electrode 23 for providing favorable ohmic contact with the n-type nitride semiconductor, there are metals such as Al, Ti, W, Si, Zn, Sn and In, and alloys thereof.

When the n-side contact layer 12 is made in super lattice structure of different impurity concentration, resistance in the transverse direction can be reduced due to an effect similar to that of HEMT described in conjunction with the first embodiment, thereby making it possible to reduce the threshold voltage and current of the LD device.

(Crack preventing layer 13) The crack preventing layer 13 is made of, for example, Ino.Gao.gN doped with Si in a concentration of 5X101/cm 3 and has a thickness of, for example, 500 angstroms. The crack preventing layer 13, when formed by growing an n-type nitride semiconductor which includes In, preferably InGaN, is capable of preventing cracks from developing in a nitride semiconductor layer which includes Al to be formed thereon. The crack preventing layer 13 is preferably grown to a thickness in a range from 100 angstroms 10 to 0.5 pm. When the thickness is less than 100 angstroms, the layer is difficult to function as a crack preventing layer. When the thickness is greater than 0.5 pm, the crystal tends to be blackened.

The crack preventing layer 13 may be omitted in case the n-side contact layer 12 is made in super lattice structure as in the case of the first embodiment, or when the n-side cladding layer 14 to be grown next is made in super lattice structure.

(n-side cladding layer 14 made in n-type super lattice structure) The n-side cladding layer is made of n-type Al 0 .2Gao.sN doped with Si in a concentration of 5 X 10 1 /cm 3 in super lattice structure made by laminating the first layer 20 angstroms thick and the second layer made of undoped GaN 20 angstroms thick alternately, and has an overall thickness of, for example, 0.5 pm. The n-side cladding layer 14 functions as a carrier trapping layer and light trapping layer and, when it is made in super lattice structure, one of the layers is preferably made by growing a nitride semiconductor which includes Al, preferably AlGaN. When the layer is grown to a 29 thickness not less than 100 angstroms and within 2 pm, more preferably in a range from 500 angstroms to 1 pum, a good carrier trapping layer can be formed. While the n-side cladding layer 14 may be made by growing a single nitride semiconductor, it may also be made in a super lattice layer which enables it to form a carrier trapping layer of good quality of crystal without cracks.

(n-side optical waveguide layer The n-side optical waveguide layer 15 is made of, for example, n-type GaN doped with Si in a concentration of 5 X 10'/cm 3 S 10 and has a thickness of 0.1 pm. The n-side optical waveguide layer S 15 functions as an optical waveguide layer for the active layer and is preferably formed by growing GaN or InGaN to a thickness usually in a range from 100 angstroms to 5 pm, more preferably in a range from 200 angstroms to 1 pm. The optical waveguide layer 15 may also be made in super lattice structure. In case the n-side optical waveguide layer 15 and the n-side cladding layer 14 are made in super lattice structure, mean band gap energy of the nitride semiconductor layers which constitute the super lattice layer is set to be higher than that of the active layer. When forming a super lattice layer, at least one of the first layer and the second layer may or may not be doped with an n-type impurity. The nside optical waveguide layer 15 may also be either a single layer of undoped nitride semiconductor or a super lattice layer made by laminating undoped nitride semiconductors.

(Active layer 16) The active layer 16 is made by alternately laminating a quantum well layer which is made of, for example, In 0 .2Gao 0 8 N doped with Si in a concentration of 8X10'/cm 3 and has a thickness of angstroms and a barrier layer made of Inoo 05 Gao 0 sN doped with Si in a concentration of 8 X 10 1 /cm 3 and has a thickness of 50 angstroms, thereby forming a layer of multiple quantum well structure

(MQW)

having a specified thickness. In the active layer 16, either both or one of the quantum well layer and the barrier layer may be doped with the impurity. When doped with an n-type impurity, threshold value tends to decrease. When the active layer 16 is made in 10 multiple quantum well structure as described above, it is always S: formed by laminating the quantum well layer having a lower band gap energy and a barrier layer having a band gap energy lower than that of the quantum well layer, and is therefore distinguished from super lattice layer.. Thickness of the quantum well layer is within 100 angstroms, preferably within 70 angstroms and most preferably 50 angstroms. Thickness of the barrier layer is within 150 angstroms, preferably within 100 angstroms and most preferably angstroms. For example, the quantum well structure active layer disclosed by Japanese Non-examined Patent Publication No.

9-148678 Patent Application 08/743,72).

(p-side cap layer 17) The p-side cap layer 17 has band gap energy higher than that of the active layer 16, and is made of, for example, p-type Al 0 3 GaoN doped with Mg in a concentration of 1X10 2 0 cm 3 and has a thickness of, for example, 200 angstroms. While the cap layer 17 is preferably used in this way according to the second embodiment, the cap layer is formed with a small thickness and therefore may be of i-type wherein carriers are compensated by doping n-type impurity. Thickness of the p-side cap layer 17 is controlled within 0.1 pm, more preferably within 500 angstroms, and most preferably within 300 angstroms. When grown to a thickness greater than 0 .1 pm, cracks tend to develop in the p-side cap layer 17 making it difficult to grow a nitride semiconductor layer of good quality of crystal. When the thickness of the p-side cap layer 17 is greater than 0.1 um, the carrier cannot pass through the 1 0 p-side cap layer 17, which acts as an energybarrier, through tunnel effect. When the penetration of carrier by tunnel effect is taken into consideration, the thickness is preferably set to within 500 angstroms and more preferably within 300 angstroms.

The p-side cap layer 17 is preferably formed by using AlGaN having a high proportion of Al in order to make the LD device easier to oscillate, and the LD device becomes easier to oscillate when the AlGaN layer is made thinner. For example, in the case of AlyGa 1 with the value of Y being 0.2 or greater, the thickness is preferably controlled within 500 angstroms. While the lower limit of the p-side cap layer 17 is not specified, it is preferably formed to a thickness not less than 10 angstroms.

(p-side optical waveguide layer 18) The p-side optical waveguide layer 18 has band gap energy higher than that of the p-side cap layer 17 and is made of, for example, p-type GaN doped with Mg in a concentration of 1 X l0 2 /cm 3 and has a thickness of 0 .1 pm. The p-side optical waveguide layer 18 functions as an optical waveguide layer for the active layer 16, and is preferably formed by growing GaN, InGaN similarly to the n-side optical waveguide layer 15. This layer functions also as .a buffer layer when growing the p-side cladding layer 19, and functions as a favorable optical waveguide layer when grown to a thickness in a range from 100 angstroms to 5 pm, and more preferably in a range from 200 angstroms to 1 pm. While the p-side optical waveguide layer is usually rendered p-type conductivity by doping a p-type impurity such as Mg, alternatively it may not 10 be doped with any impurity. And the p-side optical waveguide layer may also be made in super lattice structure. When made in super lattice structure, at least one of the first layer and the second layer may be doped with a p-type impurity, or may not be doped at all.

(p-side cladding layer 19 super lattice layer) The p-side cladding layer 19 is made of p-type Al0.2Gao.

0

N

doped with Mg in a concentration of 1X10 20 /cm 3 in super lattice structure made by alternately laminating the first layer angstroms thick and the second layer which is made of p-type GaN and is doped with Mg in a concentration of 1X10 2 0 /cm 3 having a thickness of 20 angstroms. The p-side cladding layer 19 functions as a carrier trapping layer similarly to the n-side cladding layer 14 and particularly functions as a layer for decreasing the resistivity of the p-type layer. While limits of thickness of the p-side cladding layer 19 are not specified, too, it is preferably formed to a thickness not less than 100 angstroms and not greater than 2 more preferably not less than 500-angstroms and not greater than 1 nm.

(p-side contact layer The p-side contact layer 20 is made of, for example, p-type GaN doped with Mg in a concentration of 2 X 10 2 /cm 3 and has a thickness of, for example, 150 angstroms. The p-side contact layer 20 can be made in a constitution of InxAlyGa_xN (0X, 0 9Y, X+Y-l) of p-type, and the most preferable ohmic contact with the p electrode 21 can be obtained by using GaN doped with Mg as 10 described above. Thickness of the p-type contact layer is preferably controlled to within 500 angstroms, more preferably within 300 angstroms and most preferably within 200 angstroms.

This is because resistivity can be further decreased by controlling the thickness of the p-type nitride semiconductor which has a high resistivity of several ohm-centimeters or higher within 500 angstroms, thus reducing the threshold current and voltage. It o i s also made possible to increase the amount of hydrogen removed from the p-type layer, thereby further reducing the resistivity.

According to the present invention, the p-side contact layer 20 may also be made in super lattice structure. When making a super lattice layer, the first layer and the second layer having different values of band gap energy are laminated in a succession of 1st, 2nd, 1st, 2nd and so on, so that the layer having lower band gap energy is exposed at the last, in which case preferable ohmic contact with the p electrode 21 can be obtained. The p electrode 21 may be made of, for example, Ni, Pd, Ni/Au, etc.

According to the second embodiment, an insulating film made of SiO 2 is formed on the surface of nitride semiconductor layer exposed between the p electrode 21 and an n electrode 23 as shown in Fig. 2, while the p pad electrode 22 which is electrically connected to the p electrode 21 via an aperture formed in the insulating film 25 and an n pad electrode 24 connected to the n electrode 23 are formed. The p pad electrode 22 increases the substantial surface of the p pad electrode 22 so that the side of p electrode can be wire-bonded and die-bonded, and the n pad electrode 24 prevents the n electrode 23 from peeling off.

The nitride semiconductor device of the second embodiment has the p-type cladding layer 19 of good quality of crystal which is a super lattice layer made by laminating the first layer and the second layer with a film thickness within the elastic strain limit. With this configuration of the nitride semiconductor device according to the second embodiment, resistance of the p-side cladding layer 19 can be decreased to a level at least one order of magnitude lower than that of a p-type cladding layer which does not have super lattice structure, and therefore threshold voltage and current can be reduced.

Also in the nitride semiconductor device of the second embodiment, a nitride semiconductor having a low band gap energy is formed as the p-side contact layer 20 having a small thickness of 500 angstroms or less in contact with the p-side cladding layer 19 which includes p-type AlGa,,yN, so that the carrier concentration of the p-side contact layer 20 is substantially increased and favorable ohmic contact with the p electrode can be obtained, thereby making it possible to decrease the threshold current and voltage of the device. Further, because the second buffer layer 112 is installed before growing the n contact layer, the nitride semiconductor layer to be grown on the second buffer layer 112 can be rendered good quality of crystal and a longlife device can be made. When the n-side contact layer which is grown on the second buffer layer 112 is made in super lattice structure, resistance in the transverse direction is reduced 10 thereby making it possible to make a device having low threshold voltage and threshold current.

In case a nitride semiconductor which includes at least indium, such as InGaN, is provided in the active layer 16 in the ooo *LD device of the second embodiment 2, it is preferable that a super lattice layer made by alternately laminating InxGalxN and AlyGajyN is used as layers which interpose the active layer 16 (the n-

SI

side cladding layer 14 and the p-side cladding layer 19). When configured in this way, differences in the band gap energy and refractive index between the active layer 16 and the super lattice layer can be increased, so that the super lattice layer can act as an excellent light trapping layer when a laser device is manufactured. Moreover, because InGaN has softer crystal characteristic than other nitride semiconductors which include Al such as AlGaN, cracks are less likely to develop throughout the laminated nitride semiconductor layers when InGaN is used in the active layer. Thus the service life of the LD device can be elongated.

In the case of a semiconductor device of double-hetero structure having the active layer 16 of quantum well structure as in the second embodiment, it is preferable that the p-side cap layer 17 made of a nitride semiconductor which has band gap energy higher than that of the active layer 16 and a thickness within 0.1 pm, preferably the p-side cap layer 17 made of a nitride semiconductor which includes Al is installed in contact with the active layer 16, the p-side optical waveguide layer 18 having a Soo* band gap energy lower than that of the p-side cap layer 17 is installed at a position farther than the p-side cap layer 17 from the active layer, and a nitride semiconductor having a band gap energy higher than that of the p-side optical waveguide layer 18, preferably the p-side cladding layer 19 having super lattice structure which includes a nitride semiconductor including Al, is installed at a position farther than the p-side optical too**: p waveguide layer 18 from the active layer. Because the p-side cap layer 17 is made with a high band gap energy, electrons injected from the n layer are blocked by the p-side cap layer 17 and trapped, so that the electrons do not overflow the active layer, thus resulting in less leakage current in the device.

While configurations of the nitride semiconductor device according to the second embodiment which are preferable as the configuration of laser device are described above, the present invention is not limited to any particular device configuration and is applicable as long as at least one n-type super lattice layer is provided in the semiconductor region 202 on n conductivity side below the active layer 16, and at least one p-type super lattice layer is provided in the semiconductor region 252 on p conductivity side above the active layer 16. However, it is most preferable for the purpose of reducing the values of Vf and' threshold of the device, that the p-type super lattice layer is formed in the p-side cladding layer 19, which acts as a carrier trapping layer, when provided in the semiconductor region 252 on p conductivity side, and is formed in the n contact layer 12, which 10 acts as a current injection layer which the n electrode 23 is in contact with, or the n cladding layer 14, which acts as a carrier trapping layer, when provided in the semiconductor region 202 on n conductivity side. It is a matter of course that the o "configuration similar to that of the device of the second embodiment can be applied to an LED device (except for that a ridge *is not necessary for the LED device).

In the nitride semiconductor device of the second 5.55 embodiment configured as described above, it is preferable that the device be annealed in an atmosphere which does not include H, for example nitrogen atmosphere, at a temperature not lower than 400°C, for example 700°C, after the layers have been formed.

This process decreases the resistance of each layer of the ptype nitride semiconductor region further, thereby decreasing the threshold voltage further.

Also in the nitride semiconductor device of the second embodiment, the p electrode 21 made of Ni and Au is formed in the form of stripe on the surface of the p-side contact layer 12, while the n-side contact layer is exposed symmetrically with respect to the p electrode 21 and the n electrode 23 is installed to cover .nearly the entire surface of the n-side contact layer. When an insulating substrate is used, such a configuration of providing the n electrode 23 symmetrically on both sides of the p electrode 21 is very advantageous in decreasing the threshold voltage.

According to the second embodiment, a multi-layer dielectric film made of SiO 2 and TiO 2 may be formed on the cleavage 10 plane (plane of resonator) which is perpendicular to the ridge (stripe-shaped electrode).

According to the present invention, because the super o e .lattice layer is used either as the cladding layer which acts as the carrier trapping layer formed in the n-type region or p-type *0 15 region interposing the active layer, or as, an optical waveguide layer of the active layer or as a current injection layer provided o.

with an electrode being formed in contact therewith, it is preferable to control the mean band gap energy of the nitride semiconductor which constitutes the super lattice layer to be higher than that of the active layer.

Embodiment 3 Fig. 3 is a schematic cross sectional view showing the configuration of the nitride semiconductor device according to the third embodiment of the present invention. The nitride semiconductor device of the third embodiment is a laser diode of stripe electrode type using the end face of the active layer as a resonance plane, and Fig. 3 schematically shows the cross section of the device when cut in a direction perpendicular to the direction of propagation of laser light. The third embodiment of the present invention will be described below by referring to Fig. 3.

In Fig. 3, reference numerals refer to the following components.

100 denotes a GaN substrate of a thickness not less than nm which is grown on an auxiliary substrate made of a material other than nitride semiconductor, for example a substrate made 10 of such material as sapphire, spinel, SiC, Si, GaAs and ZnO. The auxiliary substrate may be removed after the GaN substrate 100 is formed as shown in Fig. 3, or may be left to remain thereon and used without removing as in the case of an embodiment to be described later (Fig. 8) S. 15 11 denotes a buffer layer made of Si-doped n-type GaN, which also functions as an n-side contact layer in the third embodiment.

14 denotes an n-side cladding layer of super lattice structure made by laminating Si-doped n-type Al.

2 Gao.aN (first nitride semiconductor layer) 40 angstroms thick and undoped GaN layer (second nitride semiconductor layer) 40 angstroms thick, alternately in 100 layers. In the third embodiment, the n-side cladding layer 14 is formed at a position located apart from the active layer.

15 denotes an n-side guide layer made of, for example, undoped GaN which is placed between the n-side cladding layer 14 and the active layer 16 and has a band gap energy lower than that of Al 0 2 Gao.

8 N of the n-side cladding layer 14.

A semiconductor region 203 of n conductivity side is constituted from the n-side buffer layer 11, the n-side cladding layer 14 and the n-side optical waveguide layer 16 denotes an active layer of multi-quantum well structure made by laminating three quantum well layers made of Al.2Gao.

0 N with a thickness of 30 angstroms and two barrier layers made of Ino.

05 Ga.s 95 N having a band gap energy higher than that of the quantum 10 well layers and thickness of 30 angstroms, alternately, in five layers in all.

17 denotes a p-side cap layer made of, for example, Mg-doped p-type Alo.1Gao.,N which has a band gap energy higher than the band gap energy of the quantum well layers of the active layer 16 and higher than the band gap energy of the p-side optical waveguide layer 18. The band gap energy of the p-side cap layer 17 is preferably set to be higher than that of the nitride semiconductor layer (fourth nitride semiconductor layer) which has less band gap energy among the p-side cladding layer 19 of the super lattice structure.

18 denotes the p-side guide layer made of, for example, undoped GaN which is placed between the p-side cladding layer 19 and the active layer 16 and has a band gap energy lower than that of A1 0 2 Gao.eN of the p-side cladding layer 19.

19 denotes a p-side cladding layer of super lattice structure made by laminating Mg-doped p-type AlozGao.

8 N which is angstroms thick and undoped GaN layer 40- angstroms thick, alternately in 100 layers, located apart from the active layer.

denotes a p-side contact layer made of, for example, Mg-doped GaN which has a band gap energy lower than that of the Al 0 2 Ga 08 N of the p-side cladding layer 19.

A semiconductor region 253 of p conductivity side is constituted from the p-side cap layer 17, the p-side optical waveguide layer 18, the p-side cladding layer 19 and the p-side contact layer As described above, the laser device of the third embodiment of the present invention has such a structure as the nitride semiconductor layers 11 and 14 through 20 are laminated on the GaN substrate 100, wherein stripe ridge is formed on the nitride semiconductor layer located over the p-side cladding layer 19 and the p electrode 21 is formed on substantially the entire surface of the p-side contact layer 20 located on the outermost surface of the ridge. On the surface (top surface) of the exposed n-side buffer layer 11, on the other hand, is formed the n electrode 23. In the third embodiment, the n electrode 23 is formed on the surface of the n-side buffer layer 11, but because the GaN substrate 100 is used as the substrate, such a configuration may also be employed as the portion where the n electrode is to be formed is etched down to the GaN substrate 100 thereby to expose the surface of the GaN substrate 100, then the n electrode is formed on the exposed GaN substrate 100 so that the p electrode and the n electrode are provided on the same side. An insulating film made of, for example, SiO 2 is formed on the exposed surface of the nitride semiconductor except for the top of the n electrode 23 and the p electrode 21, while the n pad electrode 22 and the n pad electrode 24 are provided for the purpose of bonding for the connection with the p electrode 21 and the n electrode 23 via the apertures in the insulating film 25 above the n electrode 23 and the p electrode 21. While the region comprising the nitride semiconductor layers placed between the active layer and the p electrode is referred to as the semiconductor region of p conductivity side, this does not mean that all the nitride semiconductor layers constituting the semiconductor region have p-type conductivity. Similarly, the region comprising the nitride semiconductor layers placed between the active layer and a GaN substrate 100 is referred to as the semiconductor region of n-side conductivity, this does not mean that all the nitride semiconductor layers constituting the region have n-type conductivity, as described previously.

The laser device according to the third embodiment of the present invention has the n-side cladding layer 14 of super lattice structure made by laminating the first nitride semiconductor layer having a high band gap energy and the second nitride semiconductor layer having a band gap energy lower than that of the first nitride semiconductor layer, the two layers having different impurity concentrations, provided at positions apart from the active layer 16 in the n-side nitride semiconductor layer located below the active layer 16 shown in Fig. 3. Thickness of the first nitride semiconductor layer and the second nitride semiconductor layer which constitute the super lattice layer is preferably controlled to be within 100 angstroms, more preferably within 70 angstroms and most preferably within a range from 10 to 40 angstroms. When the thickness is greater than 100 angstroms, the first nitride semiconductor layer and the second nitride semiconductor layer become thicker than the elastic strain limit and microscopic cracks or crystal defect tend to develop in the film. While the lower limit of the thickness of the first nitride semiconductor layer S 10 and the second nitride semiconductor layer is not specified according to the present invention and may be of any value as long as it is monoatomic layer or thicker, it is preferably 10 angstroms or greater. Further, the first nitride semiconductor layer is preferably made by growing a nitride semiconductor which includes at least Al, preferably AlxGa 1 -xN (0<X While the second nitride semiconductor layer may be anything as long as it is a nitride semiconductor having a band gap energy lower than that of the first nitride semiconductor layer, it is preferably made of a nitride semiconductor of binary mixed crystal or ternarymixed crystal such as AlyGa 1 _yN X>Y) and InzGa 1 -zN (05z<l) which can be grown easily and provide good quality of crystal. According to the present invention, it is more preferable that the first nitride semiconductor be AlxGaj-.N which does not include In and the second nitride semiconductor be InzGaLzN (0Z<1) which does not include Al, and most preferably the first nitride semiconductor is AlxGa_-xN (0<X 0.3) with the mixing proportion of Al (value of Y) being 0.3 or less and the second nitride semiconductor is GaN, for the purpose of obtaining super lattice of excellent quality of crystal.

When the first nitride semiconductor is made by using AlxGa._N and the second nitride semiconductor is made by using GaN, a remarkable advantage in terms of manufacture as described below can be obtained. That is, when forming the AlIGa .xN layer and the GaN layer by metal organic vapor phase deposition process (MOVPE: metal organic vapor phase epitaxy), every layer can be grown in the same H 2 atmosphere. Therefore, a super lattice layer can be formed by growing the AlxGa 1 _N (0<X<1) S layer and the GaN layer alternately without changing the atmosphere.

This provides a remarkable advantage when manufacturing the super lattice layer which requires several tens to several hundreds of 15 layers to be laminated.

The cladding layer which has the functions of light trapping layer and carrier trapping layer must have a band gap energy higher than that of quantum well structure of the active layer. Although a nitride semiconductor of high mixing proportion of Al can be used to make a nitride semiconductor layer of a relatively high band gap energy, it has been very difficult to grow a crystal of nitride semiconductor of high mixing proportion of Al, because of cracks which are likely to develop in a thick film. When formed in a super lattice layer as in the case of the present invention, however, cracks are made less likely to occur because the crystal is grown to a thickness within the elastic strain limit, even when the AlGaN layer formed as the first nitride semiconductor layer constituting the super lattice layer is made with a somewhat high mixing proportion of Al. With this configuration, in the present invention, a layer having a high mixing proportion of Al can be grown with good quality of crystal, and therefore it is made possible to form a cladding layer having good effects of light trapping and carrier trapping, thereby reducing the threshold voltage in the laser device. The present invention can also be applied to LED devices, in which case it is made possible to decreaseVf (forward voltage) inthe LEDdevice.

Further in the laser device according to the third *o...embodiment of the present invention, n-type impurity concentration is set to be different between the first nitride semiconductor layer and the second nitride semiconductor layer of the n-side cladding layer 14. This configuration is the :so-called modulation doping. When one layer is made with lower o n-type impurity concentration or is preferably undoped with the impurity and the other layer is doped in a higher concentration, this modulation doping is also capable of decreasing the threshold voltage and Vf. This is because the presence of a layer having a low impurity concentration in the super lattice layer increases the mobility in the layer, and coexistence of a layer having a high concentration of impurity makes it possible to form a super lattice layer even when the carrier concentration is high. That is, it is supposed that the coexistence of a layer of low impurity concentration and high mobility and a layer of high impurity concentration and high carrier concentration allows a layer having a high impurity concentration and high mobility to be a cladding layer, thus decreasing the threshold voltage and vf.

When a nitride semiconductor layer having a high band gap energy is doped with an impurity in a high concentration, the modulation doping effect is supposed to generate two dimensional electron gas between a high impurity concentration layer and a low impurity concentration layer, so that the resistivity decreases due to the effect of the two dimensional electron gas.

10 In a super lattice layer made by laminating a nitride semiconductor layer which is doped with an n-type impurity and has a high band gap energy and an.undoped nitride semiconductor layer with a low band gap energy, for example, the barrier layer side is depleted in the hetero-junction interface between the layer which is doped 15 with the n impurity and the undoped layer, while electrons (two dimensional electron gas) accumulate in the vicinity of the interface on the side of the layer having lower band gap. Since the two dimensional electron gas is formed on the lower band gap side and therefore the electron movement is not subject to disturbance by the impurity, electron mobility in the super lattice increases and the resistivity decreases. It is also supposed that the modulation doping on p side is caused by the effect of the two dimensional positive hole gas. In the case of p layer, AlGaN has higher resistivity than GaN has. Thus it is supposed that, because the resistivity is decreased by doping AlGaN with p type impurity in a higher concentration, a substantial decrease is caused in the resistivity of the super lattice layer, thereby making it possible to decrease the threshold value when the laser device is made.

When a nitride semiconductor layer having a low band gap energy is doped with an impurity in a high concentration, such an effect as described below is expected to be produced. When the AlGaN layer and the GaN layer are doped with the same amounts of Mg, for example, acceptor level of Mg becomes deeper and the activation ratio becomes lower in the AlGaN layer. In the GaNlayer, on the other hand, acceptor level of Mg becomes less deep and the Mg activation ratio becomes higher than in the AlGaN layer. When doped withMg in a concentration of 1X 10 20 /cm 3 for example, carrier concentration of about lXlO"/cm 3 is obtained in GaN, while the concentration obtained in AlGaN is only about 1 X 10"/cm 3 Hence 15 in the present invention, a super lattice layer is made from AlGaN and GaN and the GaN layer from which higher carrier concentration :can be expected is doped with greater amount of impurity, thereby forming super lattice of a high carrier concentration. Moreover,

*C*

because tunnel effect causes the carrier to move through the AlGaN layer of a lower impurity concentration due to the super lattice structure, the carrier can move in the AlGaN layer under almost no influence of the impurity, while the AlGaN layer functions also as a cladding layer having a high band gap energy. Therefore, even when the nitride semiconductor layer of lower band gap energy is doped with a greater amount of impurity, very good effect can be obtained in decreasing the threshold voltage of the laser device or LED device. The above description deals with a case of forming the super lattice layer on p-type layer side, although similar effect can be obtained also when a super lattice layer is formed on the n layer side.

When the first nitride semiconductor layer having a higher band gap energy is doped with an n-type impurity in a high concentration, the amount of doping in the first nitride semiconductor layer is preferably controlled within a range from lXlOl/cm to 1X10 2 0 /cm 3 or more preferably within a range from 10 lXl10"/cm 3 to 5 X10 9 /cm 3 When the impurity concentration is lower than 1 X 10 7 /cm 3 the difference from the concentration in the second nitride semiconductor layer becomes too small to obtain a layer of high carrier concentration. When the impurity concentration is higher than 1 X10 2 0 /cm 3 on the other hand, leak 15 current in the device itself tends to increase. Meanwhile the n-type impurity concentration in the second nitride semiconductor .B 5 layer may be at any level as long as it is lower than that of the first nitride semiconductor layer, but it is preferably lower than one tenth of the latter. Most preferably the second nitride semiconductor layer is undoped, in which case a layer of the highest mobility can be obtained. However, because each of the component layers of a super lattice layer is thin, some of the n-type impurity diffuses from the first nitride semiconductor into the second semiconductor layer. Though even in this case, effects of the present invention can be obtained when the n-type impurity concentration in the second nitride semiconductor layer is within 49 1 X l0'/cm 3 The n-type impurity is selected from among the elements of IVB group and VIB group of the periodic table such as Si, Ge, Se, S and 0, and preferably selected from among Si, Ge and S. The effect is the same also in case the first nitride semiconductor layer having a higher band gap energy is doped with less amount of n-type impurity and the second nitride semiconductor layer having a lower band gap energy is doped with greater amount of N-type impurity.

The laser device according to the third embodiment of the present invention has the p-side cladding layer 19 of super lattice structure made by laminating a third nitride semiconductor layer O, having a high band gap energy and a fourth nitride semiconductor layer having a band gap energy lower than that of the third nitride semiconductor layer, the two layers having different impurity 0 15 concentrations, provided at positions apart from the active layer 16 in the p-side nitride semiconductor layer located above the S. active layer 16 shown in Fig. 3. Thickness of the third nitride semiconductor layer and the fourth nitride semiconductor layer 0000 which constitute the super lattice layer are preferably controlled S0 20 to be within 100 angstroms, more preferably within 70 angstroms and most preferably within a range from 10 to 40 angstroms, as in the case of the n-side cladding layer 14. Similarly, the third nitride semiconductor layer is preferably made by growing a nitride semiconductor which includes at least Al, preferably AlxGa,_XN (0 The fourth nitride semiconductor is preferably made of a nitride semiconductor of binary mixed crystal or ternary mixed crystal such as AlGa, 1 yN (0Y<1, X>Y) or InzGa,-N (0Z l).

When the p-type cladding layer 19 is made in super lattice structure, the super lattice structure has the same effect on the laser device as that of the n cladding layer 14, and also has such an effect as follows in addition to the case of forming on the n layer side. That is, the p-type nitride semiconductor has resistivity which is usually at least two orders of magnitude higher compared to n-type nitride semiconductor. Therefore, when a super lattice layer is formed on the p layer side, remarkable 1 0 effect of reducing the threshold voltage is obtained. Nitride semiconductor is known to be a semiconductor which is difficult to obtain in the form of p-type crystal. Such a process has been known where a nitride semiconductor layer doped with a p-type impurity is annealed and then hydrogen is removed thereby 15 manufacturing a p-type crystal (Japanese Patent No. 2540791) However, the p-type nitride semiconductor thus obtained has 9 S0*" resistivity as high as several ohm-centimeters at the lowest. By turning this p-type layer into a super lattice layer, better quality of crystal can be obtained and the resistivity can be 0 00 20 reduced at least one order of magnitude lower than that of the prior art, thereby making it possible to decrease the threshold voltage.

In the third embodiment, the third nitride semiconductor layer and the fourth nitride semiconductor layer of the p-type cladding layer 19 are set to have different concentrations of p-type impurity, so that one layer has a high impurity concentration and the other layer has a lower impurity concentration. Similarly to the case of the n-side cladding layer.

14, threshold voltage and Vf can be decreased by doping the third nitride semiconductor layer which has a high band gap energy with the p-type impurity in a higher concentration and doping the fourth nitride semiconductor layer which has a low band gap energy with the p-type impurity in a lower concentration.

A configuration reverse to the above is also possible: the third nitride semiconductor -layer which has high band gap 10 energy is doped with the p-type impurity in a lower concentration and the fourth nitride semiconductor layer which has low band gap S* energy is doped with the p-type impurity in a higher concentration.

*fl.

The reason is as described previously.

The amount of doping in the third nitride semiconductor S 15 layer is preferably controlled within a range from 1X1lO 8 /cm 3 to 1X10n 2 /cm 3 or more preferably within a range from iX1O/cm 3 to 5Xl0 20 /cm 3 When the impurity concentration is lower than 1X l0 18 /cm 3 the difference from the concentration in the fourth nitride semiconductor layer becomes too small to obtain a layer of high carrier concentration. When the impurity concentration -is higher than 1X10 2 /cm 3 on the other hand, quality of crystal tend to deteriorate. Meanwhile the p-type impurity concentration in the fourth nitride semiconductor layer may be at any level as long as it is lower than that of the third nitride semiconductor layer, but it is preferably lower than one tenth of the latter.

Most preferably the fourth nitride semiconductor layer is undoped, 52 in order to obtain the highest mobility. In practice, however, because the film is thin, some of the p-type impurity diffuses from the third nitride semiconductor. In order to obtain good effect in the present invention, the concentration is preferably within IXl0 2 1/cm3. The p-type impurity is selected from among the elements of HA group and fIB group of the periodic table such as Mg, Zn, Ca and Be, and preferably selected from among Mg and Ca.

The above applies also to such a case as the third nitride semiconductor layer having higher band gap energy is doped with 1 0 less amount of p-type impurity and the fourth nitride semiconductor layer having lower band gap energy is doped with greater amount of p-type impurity.

In the nitride semiconductor layer constituting the super lattice layer, the layer doped with the impurity in a higher e 15 concentration is preferably doped so that such a distribution of impurity concentration is obtained, that the impurity concentration is high in the middle portion of the semiconductor layer in the direction of thickness (located far from the second nitride semiconductor layer or the fourth nitride semiconductor layer) and is low (or undoped) in the portions near the ends (portions adjacent to the second nitride semiconductor layer and the fourth nitride semiconductor layer). When the super lattice layer is formed from the AlGaN layer doped with Si as n-type impurity and the undoped GaN layer, the AlGaN layer releases electrons as donor into the conductive band because it is doped with Si, the electrons fall in the conductive band of the GaN which has a low potential. Because the GaN crystal is not doped with the donor impurity, carrier disturbance due to an impurity does not occur. Thus the electrons can move easily in the GaN crystal, namely high electron mobility is obtained. This is similar to the effect of the two dimensional electron gas described previously, thus increasing the mobility of the electrons substantially in the transverse direction and decreasing the resistivity. In the AlGaN layer having a high band gap energy, the effect is further enhanced when the central region relatively apart from the GaN layer is doped with the n-type impurity in a high concentration.

That is, among the electrons that move in GaN, electrons passing through a portion near the AlGaN are more or less subject to disturbance by the n-type impurity ions (Si in this case) which are present in a portion of the AlGaN layer adjacent to the GaN 15 layer. However, when a portion of the AlGaN layer adjacent to the

S

GaN layer is undoped as described above, electrons passing through the portion near the AlGaN layer become less subject to the disturbance of Si, and therefore mobility in the undoped GaN layer is further improved. Similar effect is obtained also when super S 20 lattice is formed from the third nitride semiconductor layer of the p layer side and the fourth nitride semiconductor layer, although the action is different somewhat, and it is preferable that the third nitride semiconductor layer having a high band gap energy be doped with the p-type impurity in a higher concentration at the middle portion thereof and doped in a lower concentration or undoped at all at portions which are adjacent to the fourth nitride semiconductor layer. Although the impurity concentration distribution may also be realized in the nitride semiconductor layer having a low band gap energy doped with the n-type impurity in a higher concentration, a super lattice layer made by doping the nitride semiconductor layer of.a lower band gap energy has less effect.

While the configurations where the n-side cladding layer 14 and the p-side cladding layer 19 are made in super lattice layer structure have been described above, according to the present invention, the n-side buffer layer 11 acting as a contact layer, the n-side optical waveguide layer 15, p-side cap layer 17, the e p-side optical waveguide layer 18, p-side contact layer 20, or the like may also be formed in super lattice structure. That is, any layer, whether it makes contact with the activation or not, 15 may be formed in super lattice structure. When the n-side buffer layer 11 whereon the n electrode is formed is formed in super lattice structure, in particular, the effect similar to that of HEMT can be easily obtained.

S* Further in the laser device according to the third S 20 embodiment of the present invention, the n-side optical waveguide layer 15 in which the impurity (n-type impurity in this case) concentration is controlled within 1X10' 9 /cm 3 is formed between the n-side cladding layer 14 made of super lattice layer and the active layer 16, as shown in Fig. 3. Even when the n-side optical waveguide layer 15 is undoped, there is a possibility that the n-type impurity from other layers diffuses into this layer, although the effect of the present invention will not be lost provided that the concentration of the doped impurity is within 1XO1"/cm 3 in which case the n-side optical waveguide layer functions as.an optical waveguide layer. However, according to the present invention, impurity concentration in the n-side optical waveguide layer 1.5 is preferably within 1X10"/cm3, more preferably within 1 X 10/cm 3 and most preferably the n-side optical waveguide layer 15 is undoped. It is also preferable that the n-side optical waveguide layer 15 be formed from a nitride 10 semiconductor which includes In or from GaN.

Also in the laser device according to the third embodiment, the p-side optical waveguide layer 18 in which the impurity (p-type impurity in this case) concentration is controlled within 1 X 9 /cm3 is formed between the p-side cladding layer 19 made of super 15 lattice layer and the active layer 16. According to the present invention, impurity concentration in the p-side optical waveguide layer 18 may be within 1X10/cm 3 but is preferably controlled *a within 1 X 10 8 /cm 3 and most preferably the p-side optical waveguide layer 18 is undoped. While a nitride semiconductor shows n-type conductivity when undoped, conductivity of the p-side optical waveguide layer 18 may be either n-type or p-type according to the present invention and is referred to as p-side optical waveguide layer regardless of the conductivity type in this specification. In practice, there is a possibility that the p-type impurity from other layers diffuses into the p-side optical waveguide layer 18. It is preferable that the p-side optical waveguide layer be also formed from a nitride semiconductor which includes In or from GaN.

The reason why it is preferable that an undoped nitride semiconductor be interposed between the active layer and the cladding layer is as follows. A nitride semiconductor is designed to have the active layer emit light of wavelength usually in a range from 360 to 520 nm, more particularly from 380 to 450 nm.

An undoped nitride semiconductor has lower absorptance for light of the wavelength region described above, than nitride semiconductors doped with n-type impurity or p-type impurity.

Therefore, when an undoped nitride semiconductor is interposed between a light emitting active layer and a cladding layer which acts as a light trapping layer, light emitted by the active layer is subject to less attenuation and it is made possible to make a laser device which oscillates with a low gain while decreasing the threshold voltage. This effect can be achieved when the impurity concentration in the optical waveguide layer is within 1 X i01 9 /cm 3 Thus a preferred embodiment of the present invention is a light emitting device which is located apart from an active layer and has a cladding layer of super la'ttice structure that has been modulation-doped with an impurity, and a guide layer which is doped with an impurity in a low concentration or preferably undoped, interposed between the cladding layer and the active layer.

Further preferred embodiment is the light emitting device of the third embodiment wherein a quantum well layer of active layer and the p-side cap layer 17 made of a nitride semiconductor of thickness 0.1 zm or less having a band gap energy higher than the band gap energy of the interface of the p-side guide layer 18 is formed between the p-side guide layer 18 and the active layer 16, with the impurity concentration in the p-side cap layer being controlled at lXlO10/cm 3 or higher. Thickness of the p-type cap layer 17 is controlled within 0.1 pm, more preferably within 500 angstroms, and most preferably within 300 angstroms. When grown to be thicker than 0.1 um, cracks tend to develop in the p-type 10 cap layer 17 thus making it difficult to grow a nitride semiconductor layer of good quality of crystal. When a thin layer having a high band gap energy is formed to a thickness within 0.1 p:m adjacent to the active layer, leak current in the light emitting device can be decreased. This causes the electrons injected from 15 the n layer side to accumulate in the active layer due to the energy barrier of the cap layer, resulting in increased probability of recombination of electrons and positive holes, thereby making it possible to increase the output power of the device. It is necessary to control the impurity concentration in the cap layer at iXl0 18 /cm 3 or higher. That is, the cap layer has a relatively high proportion of mixed Al, and a layer having a high proportion of mixed Al tends to have high resistance. Therefore, unless the layer is doped with an impurity to increase the carrier concentration and reduce the resistivity, the layer becomes similar to i layer of high resistance, thus forming p-i-n structure with poor current-voltage characteristics. The cap layer 58 provided on the p side may also be formed on then -side. When formed on the n side, doping of the n-type impurity is not necessary.

In the laser device of the third embodiment constituted as described above, because the n-side cladding layer 14 and the p-side cladding layer 19 are made in super lattice structure, electric resistance and the threshold voltage of the n-side cladding layer 14 and the p-side cladding layer 19 can be reduced and the laser can be oscillated for a long period of time.

In the laser device of the third embodiment, reduction of the threshold voltage -is attempted with various means as described above, in addition to the constitution of the n-side cladding layer 14 and the p-side cladding layer 19 in super lattice structure.

Although the n-side cladding layer 14 and the p-side cladding layer 19 are made in super lattice structure in the third embodiment, the present invention is not limited to this configuration and either one of the n-side cladding layer 14 and the p-side cladding layer 19 may be made in super lattice structure.

With such a configuration, too, the threshold voltage can be reduced compared to the prior art.

Although the n-side cladding layer 14 and the p-side cladding layer 19 are made in super lattice structure in the third embodiment, the present invention is not limited to this configuration and it suffices that any one or more of the p-side and n-side nitride semiconductor layers other than the n-side cladding layer 14 and the p-side cladding layer 19 may be made in super lattice structure. With such a configuration, too, the threshold voltage can be reduced compared to the prior art.

Although the n-side cladding layer 14 and the p-side cladding layer 19 are made in super lattice structure in the laser device of the third embodiment, the present invention is not limited to this configuration and can be applied to other nitride semiconductor devices such as light emitting diode (LED), as a matter of course. With such a configuration, Vf (forward voltage) can be reduced in the case of a light emitting diode.

As described above, because the laser device of the third i" embodiment has the cladding layer made in super lattice layer made by modulation doping of an impurity, the threshold voltage can be decreased and oscillation can be continued for a long period of time. Also the laser device can be set to a high characteristic temperature which makes it possible to make a good laser device.

The characteristic temperature is the threshold current density .i S""as a function of temperature, which is proportional to exp(T/T 0 where T is the operating temperature and T. is the characteristic temperature In the laser device, higher value of T o allows lower threshold current density even at a; high temperature, resulting in stable operation. In the laser device of embodiment 27. to be described later, for example, To is as high as 150K or over. This value indicates excellent temperature characteristic of the LD. Thus when the laser device of the present invention is used as a writing light source and/or reading light source, a capacity not obtained with the prior art can be achieved, providing a great value of industrial utilization Embodiment 4 Fig. 9 is a schematic perspective view showing the shape of the laser device according to the fourth embodiment of the present invention. Fig. 9 also shows the cross section of the device when cut in a direction perpendicular to the ridge stripe. The fourth embodiment of the present invention will be described below by referring to Fig. 9.

Each layer of the laser device according to the fourth embodiment is formed in a manner as described below.

(Underlying layer 302) The underlying layer 302 is, for example, made of GaN and has a thickness of 4 um. The underlying layer 302 is formed via a 200-angstrom-thick buffer layer (not shown) consisting of GaN on an auxiliary substrate 301 made of, for example, sapphire.

The underlying layer 302 forms partially a protective film on the "surface and is used for the layer on which the nitride semiconductor substrate is to be grown selectively. The underlying layer 302 is made of GaN or AlxGal_ 1 N and in the case of including Al, AlGa_-,N (0 X-0.5) having a Al mixed crystal ratio exceeds 0.5, cracking easily occurs in the crystal itself, rather than the crystal defects, resulting in difficulty of the crystal growing itself.

The under lying layer 302 is desirably grown to a larger thickness than that of the buffer layer and adjusted to not more than pm. The auxiliary substrate 301 may be made of SiC, ZnO, spinel, GaAs and the like, as well as sapphire, which are known to be used 61 for growing the nitride semiconductors and are different from nitride semiconductors.

(Protective film 303) For a protective film 303, 1-um-thick SiO, film having a sufficient length in the resonating direction is patterned to form 10-pm-wide stripe windows with a periodicity of 2 pm on the underlying layer 302. The examples of the protective film may include stripes, dots or checks. The protective film 303 may preferably have a larger area than the windows (the exposed parts 10 of the underlying layer 302 on which the SiO 2 is not formed), so o** as to grow a nitride semiconductor substrate 304 with less crystal defects. The materials of the protective film 303 may include oxides such as silicon oxide (SiOj), silicon nitride (Si.Niy),.

titanium oxide (TiO.) and zirconium oxide (ZrOj), nitrides, or 15 multi-layer film thereof, as well as metals having a melting point higher than 12000C. These materials can stand at high temperatures ranging between 600°C and 1100°C at which nitride semiconductors can be grown and nitride semiconductors do not grow or are difficult to grow on the surface of the materials.

(Nitride semiconductor substrate 304) For a nitride semiconductor substrate 304, for example, undoped GaN having a thickness of, for example, 20 pm is grown on the protective film 303 using MOVPE method. The nitride semiconductor substrate 304 may be grown using Halide Vapor Phase Epitaxy (HVPE) method as well as using MOVPE method in this way.

The nitride semiconductor substrate may be most preferably 62 obtained by growing GaN without In or Al. It is most desirable to use TMG as well as organic gallium compounds such as triethylgallium (TEG) as a gas for growth and to use ammonia or hydrazine as nitrogen sources. Donor impurities such as Si and Ge may be doped to the GaN substrate so as to adjust the carrier density to the suitable range. In the case that the auxiliary substrate 301, the underlying layer 302, and the protective film 303 are eliminated, the nitride semiconductor substrate functions as a contact layer and therefore, donor impurities may be desirably 10 doped to the nitride semiconductor substrate.

(n-side buffer layer 311= which also functions as a contact layer) The n-side buffer layer 311 is obtained for example, by forming a 5 in-thick GaN doped with Si to 3 X10"/cm 3 on the nitride semiconductor substrate 304. The buffer layer 311 15 functions as a contact layer for forming a n-electrode in the case of the fabrication of the light emitting device having a structure Sas shown in Fig. 9. In the case that the auxiliary substrate 301 to the protective film 303 are eliminated and the electrode is formed on the nitride semiconductor substrate 304, the n-side buffer layer can be omitted. The n-side buffer layer 311 is one which is grown at high temperature and is different from the buffer layer which is formed by growing GaN, A1N and the like to a thickness of 0.5 pm or less directly on the substrate of the material such as sapphire, SiC and spinel and which is different from the nitride semiconductor at a low temperature of 900°C or less.

(Crack-preventing layer 312) The crack-preventing layer 312 is formed by, for example, growing Ino.

06 Gao.s 4 N to a thickness of 0.15 pm on the n-side buffer layer 311.

(n-side cladding layer 313 super lattice layer) The n-side cladding layer 313 is composed of a super lattice layer which is obtained by laminating alternately the 2 5 -angstrom-thick first layer consisting of n-type Alo.

0 Gao 0 4

N

doped with Si to 1 X10O/cm 3 and the 25-angstrom-thick second layer consisting of undopedGaN, and has a total thickness of, for example, 1 0 1.2 pm. The n-side cladding layer 313 composed of a super lattice layer has an average Al composition of 8.0 and the product of that and the film thickness equals 9.6. In the case that the n-side cladding layer 313 is composed of a super lattice layer obtained by laminating the nitride semiconductor layers which have different band gap energy from each other, more impurities may be doped to one layer, that is, modulation-doping may be performed, so as to lower the threshold value. The composition and thickness of the n-side cladding layer 313 (a super lattice layer) will be described in detail below.

(n-side light waveguide layer 314) The n-side light waveguide layer 314 is made of undoped GaN and has a thickness of, for example, 0.1 pm. The n-side light waveguide layer functions as a light waveguide layer for the active layer. The n-side light waveguide layer is desirably formed by growing GaN or InGaN to a thickness, usually ranging between 100 angstroms and 5 pm, preferably ranging between 200 angstroms and 1 Pum.

(active layer 315) The active layer 315 is made by alternately laminating a quantum well layer which is made of undoped Ino.

2 Gao.

8 N and has a thickness of 40 angstroms and a barrier layer made of undoped Ino.oiGao.

99 N and has a thickness of 100 angstroms, thereby forming a layer of multiple quantum well structure having a total thickness of, for example, 440 angstroms. The active layer 315 maybe undoped as in the present embodiment or may be doped with donor impurities 10 and/or p-type impurities. In this case, either both or one of the quantum well layer and the barrier layer may be doped with the S impurity.

(p-side cap layer 316) The p-side cap layer 316 has band gap energy higher than S. 15 that of the p-side light waveguide layer 317 which is formed thereon, and is made of p-type A1 0 .3Gao.,N doped with Mg in a concentration of 1X10 20 /cm 3 and has a thickness of, for example, 300 angstroms.

The p-type cap layer 316 has a thickness of 0.1 pm or less so as to ehhance the laser of the device. The lower limit of the film S 20 thickness is not specified, but the p-side cap layer 316'may desirably have a thickness of 10 angstroms or more.

(p-side light waveguide layer 317) The p-side light waveguide layer 317 has band gap energy lower than that of the p-side cap layer 316, and is made of, for example, undoped GaN and has a thickness of 0.1 pm. The p-side light waveguide layer functions as a light waveguide layer for the active layer and is desirably made of GaN- or InGaN like the n-type light waveguide layer 314.

(p-side cladding layer 318) The p-side cladding layer 318 has a super lattice structure made by alternately laminating the third layer which is made of p-type Alo.

0 1 Ga 0 o.

4 N doped with Mg to 1X10 20 /cm 3 and has a thickness of 25 angstroms and the fourth layer which is made of undoped GaN and has a thickness of 25 angstroms. The p-side cladding layer 318 has an average Al composition of 8% and the product of the value and the film thickness equals 4.8. In the case that the p-side cladding layer 318 is composed of a super lattice layer obtained by laminating the nitride semiconductor layers at least one of which includes a nitride semiconductor layer containing Al and which have different band gap energy from each S. 15 other, more impurities may be doped to any one layer, that is, modulation-doping may be performed, so as to lower the threshold value. The composition and thickness of the p-side cladding layer 318 (a super lattice layer) will be described in detail below.

Now, the thickness of the core part (waveguide part) 20 which is sandwiched between the cladding layers will be described below. The core part is the area including the n-side light waveguide layer 314, active layer 315, p-side cap layer 316 and the p-side light waveguide layer 317, that is, the nitride semiconductor layers including the active layer which are sandwiched between the n-side cladding layer and the p-side cladding layer and the area which waveguides the emitting from the active layer. In the case of the nitride semiconductor laser device, as mentioned above, FFP is not a single beam because the emission leaking via the cladding layer can be wave-guided within the n-side contact layer, resulting in multi-mode. Otherwise, the emission is resonated within the core part, resulting in multi-mode.

According to the present invention, the n-side cladding layer has a large thickness and a large average Al composition in order to obtain the difference between the refractive indices and to trap the emission from the core part within the cladding layer. However, if the multi-mode occurs within the core part, FFP is disturbed.

Therefore, in order that the multi-mode does not occur within the core part, the thickness of the core part is desirably adjusted, with respect to the n-side cladding layer. The thickness is desirably adjusted to the range from 200 angstrom to 1.0 pm, 15 preferably from 500 angstroms to 0.8 pm, most preferably from 0.1 pm to 0.5 um, in order that the multi-mode does not occur within the core part. If the thickness is below 200 angstroms, the emission leaks from the core part to increase the threshold value.

SIf the thickness is above 1.0 pm, the multi-mode is likely to occur.

S 20 (p-side contact layer 319) The p-side contact layer 319 is made of, for example, p-type GaN doped with Mg to 2X10 20 /cm 3 and has a thickness of, for example, 150 angstrom. The p-side contact layer 319 can be made in a constitution of p-type InxAlyGa 1 x_yN(O X, 0:Y, X+Y: as well as p-type GaN as mentioned above, and the preferable ohmic contact with the p electrode 321 can be obtained by using GaN doped with Mg.

In the embodiment 4, the wafer on which each nitride semiconductor layer is formed is preferably annealed at 700 0

C

within the nitrogen atmosphere in the reactor so as to decrease the resistance of the layer doped with the p-type impurity.

In the laser device of the embodiment 4, the p-side contact layer 318 which is a top layer, and the p-side cladding layer are etched with the RIE apparatus to form a ridge geometry having a stripe width of 4 unm, as shown in Fig. 9. When the ridge 10 stripe is formed, the ridge stripe is formed above the position of the surface of the nitride semiconductor substrate 304 where the crystal defects do not appear. In Fig. 9, the crystal defects g appear in the central part of the protective film 303 in the form of stripe and in the.central part of the window in the form of •15 stripe. Thus, when the stripe is formed at the point where almost no crystal defects are present, the crystal is prevented from developing to the active layer, with the result that the laser device can has a long lifetime and the reliability thereof can *be enhanced.

20 Further, a mask is formed on the ridge surface and the etching is performed with RIE to expose the surface of the nside buffer layer 311 on both sides of the ridge. On the exposed surface of the n-side buffer layer 311, the n electrode 322 made of Ti and Al is formed, respectively.

And on the outermost surface of the ridge of the pside contact layer 319, the p electrode 320 made of Ni and Au is 68 formed in the form of stripe. As shown in Fig.- 9, the insulating film 323 made of SiO 2 is formed on the surface of the nitride semiconductor layer which is exposed between the p electrode 320 and the n electrode 322. The p-pad electrode 321 which is electrically connected to the p electrode 320 is formed via the insulating film 323.

The sapphire substrate of the wafer on which the n electrode and p electrode are formed in a manner as mentioned above is polished to a thickness of 70 um and cleaved into bars from the substrate, perpendicularly with respect to the stripe-shaped *feg electrode to fabricate a resonator in which the cleaving facet functions as a reflective plane. A multi-layer dielectric film made of SiO 2 and TiO 2 may be formed on the reflective plane.

The laser device of the fourth embodiment is fabricated ooo** 15 as described above.

The .laser device of the embodiment 4 fabricated as descibed above has as a light trapping layer the n-side cladding goo** layer 313 and the p-side cladding layer 318 of a super lattice structure which have smaller refractive indices than the well layer 20 of the active layer and include nitride semiconductor, respectively. In the embodiment 4, the supper lattice layer means the multi-layer structure obtained by laminating nitride semiconductor layers which have a thickness of not more than 100 angstroms respectively and have a different composition from each other. The thickness of the layer which is laminated is preferably not more than 70 angstroms, and more preferably not more than 69 angstroms. To be concrete, for example, the super lattice layer may be made by laminating the layer made of AlxGai-xN(0<X<1) and the other nitride semiconductor layer which has a different composition from the layer made of AlxGa 1 xN, and by laminating the layer of the ternary mixed crystal and the layer of the ternary mixed crystal or the layer of the ternary mixed crystal and the layer of binary mixed crystal such as AlxGa_-xN/GaN, AlxGai.

xN/AlyGaiyN(0<Y<1, AlxGalxN /InzGa_-zN(0<Z<1) and so on.

Thereamong, the most preferable super lattice layer is made of 10 AlxGalxN and GaN.

Next, the total thickness of the n-side cladding layer 313 and the thickness and the composition of each layer which

O

constitute the super lattice layer according to the embodiment 4 will be described.

First, in these specifications, the Al average composition of the super lattice layer means that calculated as described below. For example, when the super lattice layer is made by laminating a 25-angstrom-thick Al0 .Ga 0 osN and a thick GaN in 200 pairs (1.0 um), the thickness of one pair is angstroms and the mixing proportion of Al of the layer containing Al is 0.5. Using the value 0.25 obtained by multiplying the mixing ratio ofAl of the layer containing Al, 0.5, by the film thickness ratio (25/50), the Al average composition of the super lattice layer is When the super lattice layer is made by laminating the layers having a different thickness, that is, by laminating a 710 Alo.1Gao.sN and a 20-angstrom-thick GaN, the weighed mean of the film thickness is calculated to be 0.5 (40/60) 0.33, and therefore, the Al average composition is 33.3. That is, the mixing ratio of Al of the nitride semiconductor layer containing Al multiplied by the ratio of said nitride semiconductor layer to one pair of the super lattice layers equals the Al average composition in the present invention. When both layers contain Al, the Al average composition can be obtained in the same manner.

For example, the super lattice layer -is made by laminating a 10 20-angstrom- thick Alo.1Gao.

8 N and a 30-angstrom-thick Al 0 .2Gao.

8

N,

0.1 (20/50) 0.2 (30/50) 0.16, that is, the Al average composition is 16%. The example mentioned above refers to AlGaN/GaN and AlGaN/AlGaN and the same calculation method can be applied to the case of AlGaN/InGaN. And, the Al average

S

15 composition of the n-side cladding layer can be detected with an instrument for analysis such as SIMS (secondary ion mass spectrometer) and Auger electron spectrometer.

In the embodiment 4, the composition and the film thickness of each layer which constitute the super lattice layer of the n-side cladding layer 313 is set on the basis of the Al average composition as calculated using the above-mentioned calculating method. The laser device according to the embodiment 4 is characterized in that the total thickness of the n-side cladding layer 313 is not less than 0.5 m and the Al average composition in of the n-side cladding layer 313 is set to be such that the product of the Al average composition multiplied by the total thickness of the n-side cladding layer (pm) is not less than 4.4. In other words, in the embodiment 4, the thickness and the Al average composition of each layer constituting the super lattice layer are set to be such that the total thickness of the n-side cladding layer 313 is not less than 0.5 uin and the product of said thickness multiplied by the Al average composition in.% as calculated in the above-mentioned way is not less than 4.4.

When the total thickness of the n-side cladding layer 313 is less than 0.5 um and the product of said total thickness (um) multiplied by the Al average composition is less than 4.4, the light trapping effect of the n-side cladding layer is insufficient and the resonance occurs again in the n-side contact layer, with the result that the FFP is disturbed and the threshold value tends to increase. The product of the Al average composition multiplied by the total thickness of the n-side cladding layer 313 is preferably not less than 5.0, more preferably not less than 5.4, most preferably not less than According to the present invention, because of the n-side cladding layer 313 composed of a super lattice layer, even if the mixing ratio of Al is increased, the cracks can be difficult to develop in the cladding layer. Therefore, the upper limit of the total thickness of the n-side cladding layer 313 is not specified from the viewpoint of crystralinity (from the viewpoint in which the cracks are prevented from occurring), and however, it is desirable to control the thickness to be not more than pm so as to decrease the laminating times of the nitride semiconductor layers which constitute the super lattice layer.

To be concrete, for example, the total thickness of said n-side cladding layer is set to be not less than 0.8 pm and the Al average composition which is contained in said n-side cladding layer is set to be not less than 5.5 In this case, the product is not less than 4.4. Preferably, the total thickness of said n-side cladding layer is set to be not less than 1.0 pm and the Al average composition which is contained in said n-side cladding layer is set to be not less than 5.0 In this case, the product 10 is not less than 5.0. More preferably, the total thickness of said n-side cladding layer is set to be not less than 1.2 pm and the Al average composition which is contained in said n-side cladding layer is set tobe not less than 4.5 In this case, the product is not less than 5.4. The examples mentioned above described concretely the relation between the thickness of the n-side cladding layer and the Al average composition of the n-side cladding layer made in super lattice structure. It is known that when the mixing ratio of Al in AlxGal_-N is increased, the band gap energy increases and the refractive index decreases. Therefore, it is ideal and industrially convenient that the AlxGa _xN layer having a large mixing ratio of Al of, for example, not less than is grown in a single layer of, for example, a few pnm, however, the AlxGa_-xN layer is difficult to be grown thickly. If the AlxGa 1 xN, particularly having a mixing ratio of Al of not less than is intended to be grown in a single layer, the cracks should develop in the crystal in the thickness of, for example, not less than 73 0.1 im. Thus, the AlxGa 1 _xN layer having a mixing ratio of Al of not less than 0.5 is difficult to be grown in a single layer having a thickness of, for example, a few pum.

However, according to the present invention, a thin film made of AlxGa 1 _xN is used to constitute a super lattice layer and the thickness of the single film is not more than the critical film thickness of AlxGa 1 therefore, the cracks being to develop.

Therefore, when the cladding layer is composed of a super lattice layer, the layer having a high mixing ratio of Al and a large thickness can be grown. In the present invention, since the relation between the specific mixing ratio of Al and the thickness of the cladding layer could be found, the combination thereof enables the light not to leak from the n-side cladding layer to the substrate side.

When the n-side cladding layer is constituted as mentioned above to trap the emission from the active layer, the -side cladding layer may have the same constitution as that of the n-side cladding layer. When the p-side cladding layer 318 is constituted in the same manner as the n-side cladding layer 313, the thickness of the p-side cladding layer is desirably smaller than that of the n-side cladding layer. Because, when the mixing ratio of Al or the thickness of the p-side cladding layer is large, the resistance of the AlGaN layer tends to increase with the result that the threshold value tends to increase. Therefore, even if the p-side cladding layer is constituted of a super lattice layer including the nitride semiconductor layer containing Al and the product of the thickness multiplied by the Al average composition is not less than 4.4, the thickness is desirably no more than pm. The lower limit is not specified but is desirably not less than 50 angstroms in order to function as a cladding layer. In the case of the super lattice layer, the Al average composition is desirably not more than 50 Since the p-side cladding layer is shaped into a ridge and the electrode is installed thereon, the leakage of the light can be almost neglected and it is not necessary for the p-side cladding layer to have the same 10 constitution as that of the n-side cladding layer 313, but the e p-side cladding layer may have the same constitution as that of the n-side cladding layer. That is, the p-side cladding layer has a super lattice structure including the nitride semiconductor layer containing at least Al and has a total thickness of not more 15 than 1.0 Pm. Moreover, the Al average composition in contained in the p-side cladding layer may be set to be such that the product of the total thickness (pm) of the p-side cladding layer multiplied .by the Al average composition is not less than 4.4.

When the p-side cladding layer is composed of a super lattice layer including the nitride semiconductor layer containing Al (in this case, the leakage of light is not concerned and the case in which the cladding layer functions only as a carrier trapping layer is included), the total thickness of the n-side cladding layer is desirably larger than that of the p-side cladding layer. The p-side cladding layer is composed of a super lattice layer made by laminating the nitride semiconductor layers in the same way as the n-side cladding layer, for example, by laminating the AlxGal_×N layer and the other nitride semiconductor layer which has a different composition from said AlxGalxN layer, or by laminating the layer made of ternary mixed crystal and the layer made of ternary mixed crystal or the layer made of ternary mixed crystal ant the layer made of binary mixed crystal such as AlxGal-xN/GaN, AlxGal-xN/AlGal.yN AlxGa_-xN/In z GalzN and so on. Thereamong, the most preferable super lattice layer is made of AlxGa_N and GaN.

10 The present invention will be described in detail in :*the following examples.

Examples The invention will be described in detail in the S following examples.

Example 1 *According to Example 1 of the invention, nitride semiconductor devices (LD devices), as shown in Fig. 1 and 2, can be fabricated. The nitride semiconductor devices were fabricated as follows.

First, a C-plane sapphire substrate 10 was set in the reactor and the inside atmosphere of the reactor was fully replaced with hydrogen. The temperature of the substrate was increased to 1050°C with hydrogen flown in order to clean the substrate.

Subsequently, the temperature was decreased to 510 0

C.

A first buffer layer 11 consisting of GaN was grown to a film thickness of about 200 angstrom using hydrogen as a carrier gas, ammonia and TMG (trimethylgallium) as a source of GaN.

After growing the buffer layer, only TMG was stopped and the temperature was increased to 10500C. At 1050°C in the same way using ammonia and TMG (trimethylgallium) as a source of GaN, a 5 pm-thick second buffer layer 112 consisting of undoped GaN having a carrier density of 1X10O/cm was grown.

Subsequently, a 1 pm-thick n-side contact layer 12 consisting of n-type GaN doped with Si to 1X0 19 /cm 3 was grown, using TMG and ammonia and silane gas (SiH) as a source of impurity 10 at 1050 0

C.

Next, the temperature was increased to 800 0 C. A 500-angstrom-thick crack-preventing layer consisting Ino.iGao.

9

N

e doped with Si to 5X10/cm 3 was grown, using TMG, TMI (trimethylindium) and ammonia as source gases and silane gas as 15 a source of impurity.

Then, the temperature was increased to 10500C and a 20-angstrom-thick first layer consisting of n-type A1 0 2 Gao.aN doped with Si to 5 X0l/cm 3 was grown, using TMA, TMG ,ammonia and silane gas. Subsequently, TMA and silane were stopped and a angstrom-thick second layer consisting of undoped GaN was grown.

Then, each of these operations was repeated 100 times and a n-side cladding layer 14 of superlattices having a total thickness of 0.4 upm was grown.

Subsequently, a 0.1 um-thick n-side light guide layer 15 consisting of n-type GaN doped with Si to 5X101B/cm 3 was grown at 10500C.

Next, an active layer 16 was grown using TMG, TMI, ammonia and silane. For the active layer 16, first, a angstrom-thick well layer 25 consisting of Ino.2Gao.8N doped with Si to 8 Xl10"/cm was grown at 800°C. Next, at the same temperature, a 50-angstrom-thick barrier layer consisting of Ino 0 .oGao.

99 N doped with Si to 8X101"/cm 3 was grown, only by changing the molar ratio of TMI. This operation was repeated twice. Finally, the well layer was laminated and a multi-quantum-well-structure active layer 16 was grown with a total thickness of 175 angstroms.

S 10 Next, the temperature was increased to 1050 0 C. A 300-angstrom-thick p-side cap layer 17 consisting of p-type 9**e Alo10Gao.

7 N doped with Mg to 1 X10 2 /cm 3 was grown which had a greater band gap energy than the active layer, using TMG, TMA and ammonia as a source of AlGaN and Cp2Mg (cyclopentadienyl magnesium) as 9, a source of impurity.

Subsequently, a 0.1 pm-thick p-side light guide layer 18 consisting of p-type GaN doped with Mg to 1X10 20 /cm 3 was grown which had a smaller band gap energy than the p-side cap layer 17 at 1050°C.

Subsequently, a 20-angstrom-thick first layer consisting of p-type Al 0 2 Gao.eN doped with Mg to 1 X 10 2 /cm3 was grown, using TMA, TMG, ammonia and Cp2Mg at 1050 0 C. Subsequently, TMG was stopped and a 20-angstrom-thick second layer consisting of p-type GaN doped with Mg to 1X10 20 /cm 3 was grown. Each of these operations was repeated 100 times and a p-side cladding layer 19 of superlattices with a total thickness of 0.4 pm was formed.

Finally, a 150-angstrom-thick p-side contact layer consisting of p-GaN doped with Mg to 2X102°/cm 3 was grown on the p-side cladding layer 19 at 1050 0

C.

After the reaction was completed, the temperature was decreased to room temperature. Additionally, the annealing was performed to thewafer at 700°C in nitrogen atmosphere within the reactor, so as to make the p-type layer less resistive. The annealing method disclosed in U.S. Patent 5,306,662 is employed in this Example.

10 After annealing, the wafer was removed from the reactor.

As shown in Fig. 2, the top p-side contact layer 20 and the p-side cladding layer 19 were etched with RIE apparatus to make them a ridge geometry having a stripe width of 4 pm.

0 Next, a mask was formed on the surface of the ridge.

As shown in Fig. 2, the surfaces of the n-side contact layer were exposed symmetrically respect to the stripe ridge.

Next, a p-electrode 21 consisting of Ni andAuwas formed on the almost whole top surface of the stripe ridge of the pside contact layer 20, while a n-electrode 23 consisting of Ti and Al was formed on the almost whole surface of the stripe-geometry n-side contact layer.

Next, as shown in Fig. 2, an insulating film 25 was formed on the surface of the nitride semiconductor layer exposed between p-electrode 21 and n electrode 23. A p-pad electrode 22 and an n-pad electrode 24 were formed which are electrically connected to the p-electrode via the insulating film The wafer on which the n-electrode and p-electrode were formed in the above-mentioned manner was transferred to the polishing machine. The sapphire substrate on whose side the nitride semiconductor was not formed was lapped with a diamond abrasive to a substrate thickness of 50 m. After lapping, the surface of the substrate was further polished by 1 um with a finer abrasive, resulting in the mirror facet.

After polishing the substrate, the polished facet was scribed and cleaved into bars perpendicularly respect to the S 10 stripe-geometry electrode to fabricate a facet of a resonator on the cleaving facet. Adielectric multi-layer film consisting SiO 2 and TiO 2 was formed on the facet of the resonator and finally, the bar was cut parallel to the p-electrode, resulting in laser chips.

Next, the chips were set face-up (in the state that the substrate was faced to the heat sink) onto the heat sink and each electrode was connected by wire-bonding. The laser oscillation was tried at room temperature. The continuous emission at an emission wavelength of 405 nm was observed at the threshold current density of 2.9 kA/cm and the threshold voltage of 4.4Vat room temperature.

The lifetime was 50 hours or longer.

(Comparative Example 1) With the same procedure as in Example 1, the second buffer layer was not grown, the 5 pn-thick n-side contact layer 12 only consisting of n-type GaN doped with Si to 1X101 9 /cm' was grown, the 0.4 pun-thick n-side cladding layer only consisting of n-type Al 0 .2Gao.

8 N doped with Si to 1X1O' 9 /cm 3 was grown, the 0.4 pmr-thick p-side cladding layer 19 only consisting of p-type Al. 2 Ga 0 o.N doped with Mg to 1X 10/cm 3 was grown, and the 0.2 pm-thick p-side contact layer 20 only consisting of p-type GaN doped with Mg to 2 X10 2 /cm 3 was grown, so as to obtain laser devices. The basic construction was as shown in Fig. 1.

Table 1 Substrate 10 sapphire Buffer layer 11 GaN 200 A n-side contact layer '12 Si doped n-type GaN 5 pm Si: IX1019/cm 3 Crack preventing layer 13 Si doped n-type In 0 o.Gao.N 500 A Si: 5X10l/cm3 n-side cladding layer 14 Si doped n-type Al.

2 Gao.eN .0.5 pm Si: 5X10"1cm 3 n-side optical 15 Si doped n-type GaN 0.1 pm waveguide layer Si: 5X10 1 /cm 3 Active layer (MQW) 16 Si doped Ino.2Gao.eN 25 A (total thickness 175A) Si doped Ino.oiGao.

0 9 N 50 A Si: 8X101Bcm 3 Cap layer 17 Mg doped p-type Alo.Gao.gN 300 A Mg 1Xl10 2 cm 3 p-side optical 18 Mg doped p-type GaN 0.1 pm waveguide layer Mg: 1X10 2 0 cm 3 p-side cladding layer 19 Mg doped p-type AlO.2Gao.

0 N 0.5 pm Mg: 1X10 2 0 cm 3 p-side contact layer 20 Mg doped p-type GaN 0.2 pm Mg:- 2X10 20 cl 3 81 For the laser devices of Comparative Example 1 constructed in this way, the continuous emission was obtained at the threshold current density of 7kA/cm 2 However, the threshold voltage was 8.0V or higher and the emission was observed for few minutes.

Example 2 With the same procedure as in Example 1, for the n-side contact layer 12, a 30-angstrom-thick first layer consisting of 10 n-type Al 0 05 Gao. 5 N doped with Si to 2 X10/cm3 was grown and subsequently, a 30-angstrom-thick second layer consisting of undoped GaN was grown and these procedures were repeated, resulting in superlattices having a total thickness of 1.2 um. The other constructions of the laser devices were the same as in Example 15 1. The threshold current density was 2.7kA/cm 2 the threshold voltage was 4.2V and the lifetime was 60 hours or longer.

Example 3 The laser devices were fabricated which had the same constructions as in'Example 2, except for the n-side contact layer 12 composed of superlattices whose second layers consisted of GaN doped with Si to 1X10"/cm 3 The laser devices had almost similar properties to those of Example 2.

Example 4 The laser devices were fabricated which had the same constructions as in Example 1, except that the 4 -thick second buffer layer 112 consisting of GaN doped with Si to 1X10L 7 /cm 3 was grown. The threshold current density was 2.9kA/cm 2 the threshold voltage was 4.5V and the lifetime was 50 hours or longer.

Example With the same procedure as in Example 1, for the nside contact layer 12, a 60-angstrom-thick first layer consisting of n-type A10.2Gao.eN doped with Si to 2X10 9 /cm 3 was grown and subsequently, a 40-angstrom-thick second layer consisting of GaN doped with Si to IX10/cm' of Si was grown and these procedures were repeated, resulting in superlattices having a total thickness 10 of 2 upm. And the 0.4 p -thick n-side cladding layer 14 consisting of only n-type Al0.2Gao.

8 N doped with Si to 1X1019/cm 3 was grown.

The other constructions of the laser devices were the same as those in Example 1. The threshold current density was 3.2kA/cm 2 the threshold voltage was 4. 8V and the lifetime was 30 hours or longer.

15 Example 6 With the same procedure as in Example 1, the following procedures and were changed.

After the growth of the buffer layer 11, only TMG was stopped and the temperature was increased to 105b0C. At 1050 0

C,

the 60-angstrom-thick first layer consisting of n-type Al0.

2 Gao.ON doped with Si to 1 X10/cm 3 was grown using TMA, TMG, ammonia and silane as material gases and subsequently, silane and TMA were stopped and the 60-angstrom-thick second layer consisting of undoped GaN was grown. The superlattices were constructed in a manner of the first layer the second layer the first layer the second layer Five-hundreds first layers and fivehundred second layers were laminated by turns. The n-side contact layer 12 of superlattices having a total thickness of 5 un was formed.

(2)'Next, the 500-angstrom thick-crack preventing layer 13 consisting of Ino.Gao.,N doped with Si to 5X10 1 8 /cm 3 was grown in the same manner as in Example 1.

And at 1050 0 C the 0.5 pn-thick n-side cladding layer 14 consisting of n-type Alo.2Gao.

8 N doped with Si to 5X10/cm' was grown using TMA, TMG, ammonia and silane.

1 0 The constructions above the n-side cladding layer were the same as those of the laser devices in Example 1. The laser devices of this example had the basic constructions as described in Table 1, except that the n-side contact layer 12 and p-side cladding layer 19 were composed of superlattices and the p-side contact layer 20 had a thickness of 150 angstrom like Example 1.

The continuous emission at a wavelength of 405nm was observed at the threshold current density of 3.2kA/cm 2 and the threshold voltage of 4.8V. The lifetime was 30 hours or longer.

S. Further, in the case that the film thickness of the p-side contact layer of LDs according to Example 6 is changed gradually, the relation between the film thickness of the p-side contact layer and the threshold voltage of the LDs is shown in Fig. 5. The figure shows the threshold voltages in the case the p-side contact layer has a thickness of less than 10 angstrom 10 angstrom C (30 angstrom), 150 angstrom this example), 500 angstrom 0.2 um 0.5 pm and 0.8 pm in order from the left. As shown in this drawing, the-threshold voltage tends to increase gradually when the film thickness of the pside contact layer is over 500 angstrom. The p-side contact layer preferably has a thickness of 500 angstrom or less, more preferably 300 angstrom or less. When the film thickness is angstrom or less (almost one atom layer or two atom layer), the surface of the p-side cladding layer 19 which is under the pside contact layer is exposed and therefore, the contact resistance of the p-electrode is bad, resulting in that the threshold voltage 10 tends to increase. However, since LDs of the present invention had a superlattice layer, the threshold voltage was much lower than that of the comparative examples.

(Comparative Example 2) The laser devices having the construction as described 15 in Table 1 were fabricated, except that n-side cladding layer 14 was formed which was a multi-layer film having a total thickness of 0.6 pm, by growing the 180-angstrom-thick first layer consisting n-type Al.2Gao.9N doped with Si to 1X1019/cm2 and subsequently, growing the 120-angstrom-thick second layer consisting of undoped GaN. That is, the thickness of the first layer and second layer was increased and LDs were fabricated. The continuous emission was observed at the threshold current density of 6.5 kA/cm 2 and the threshold voltage was 7.5 V. The emission was observed for few minutes.

Example 7 The laser devices having the same construction as in Example 6 were fabricated, except that the p-side cladding layer 19 had a superlattice structure with a total thickness of 0.5 um obtained by laminating the 60-angstrom-thick first layers consisting of Al 0 2 Gao.,N doped with Mg to 1X10 2 "/cm 3 and the 4 0-angstrom-thick second layers consisting of p-type GaN doped withMg to 1Xl10 2 That is, the thickness of the superlattice layer constructing the p-side cladding layer 19 of Example 7 was changed and the other constructions were the same as in Example 7. The threshold voltage increased a little, as compared with that 10 in Example 6. The lifetime was 20 hours or longer.

Example 8 The laser devices having the same construction as in Example 7 were fabricated, except that the n-side cladding layer 19 had a superlattice structure with a total thickness of 0.5 p 15 m obtained by laminating the 60-angstrom-thick first layers consisting of AlO.2Gao.eN doped with Si to 1X10 1 /cm' and the 40-angstrom-thick second layers consisting of n-type GaN doped with Si to 1X10 9 /cm 3 That is, the laser devices had superlattices o as the n-side cladding layer, in addition to the n-side contact layer and p-side cladding layer having a superlattice structure in Example 6. The present laser devices had similar properties to those of Example 6.

Example 9 With the same procedures as in Example 1, the second buffer layer 112 was not grown and the 5 pm-thick n-side contact layer consisting of n-type GaN doped with Si to 1 X10"/cm was grown directly on the first buffer layer 11. The other constructions were the same as those in Example 1. That is, the laser devises had the basic constructions as described in Table 1, except that the n-side cladding layer 14 had a superlattice structure with a total thickness of 0.4 pm obtained by laminating the angstrom-thick first layers consisting of n-type Al.2GaO.

8 N doped with Si to 1XlO'/cm' and the 20-angstrom-thick second layers consisting of undoped GaN. Further, the p-side cladding layer had a superlattice structure with a total thickness of 0.4 pm obtained 10 by laminating the 20-angstrom-thick first layers consisting of p-type Alo.2Gao.

8 N doped with Mg to lXlO/cm' and the angstrom-thick second layers consisting of p-type GaN doped with *o Mg to 1X102/cm 3 Additionally, the p-side contact layer consisted of p-type GaN doped with Mg to 2Xl10 2 /cm' and had a thickness of 15 angstrom. The continuous emission at a wavelength of 405 nmwas observed at the threshold current density of 3.3kA/cm 2 and the threshold voltage was 5.0V. The lifetime was 30 hours or onger.

Example The laser devices were fabricated in the same manner as in Example 9, except that the second layer which constructed the superlattices of the n-side cladding layer 14 consisted of GaN doped with Si to 1Xl0"/cm 3 That is, the laser devices were fabricated in the same manner as in Example 9, except that the layers having a larger band gap energy were doped with Si to more amount. The present laser devises had similar properties to those 87 of Example 9.

Example 11 The laser devices were fabricated in the same manner as in Example 9, except that the second layer which constructed the n-side cladding layer 14 consisted of n-type Ino.

0 Gao.

99 N doped with Si to 1X1l0/cm 3 That is, the laser devices were fabricated in the same manner as in Example 9, except that the second layer which composed the superlattices of the n-side cladding layer 14 consisted of InGaN and had the same impurity density as the first layer. The present laser devises had similar properties to those of Example 9.

Example 12 With the same procedures as in Example 9, the n-side cladding layer had a superlattice structure with a total thickness of 0.5 u composed of the 60-angstrom-thick first layers consisting A-1 2 Ga. N doped with Si to 1X10'/cm 3 and the second layers consisting of GaN doped with Si to 1X10"/cm 3 Further, the p-side cladding layer 19 had a superlattice structure with a total thickness of 0.5 composed of the first layers consisting AlO.2Ga 0 doped with Mg to 1X10 20 /cm 3 and the 40-angstrom-thick second layers consisting of GaN doped with Mg to 1X10l 2 /cm. That is, the laser devices were fabricated in the same manner as in Example 9, except that the doped amounts in the first layers and the second layers composing the n-side cladding layer 14 were equal to each other, the thickness of them was changed, and the thickness of the first layers and the second layers composing the p-side cladding layer 19 was changed. The continuous emission at a wavelength of 405nm was observed at the threshold current density of 3.4kA/cm 2 and the threshold voltage was 5.2V. The lifetime was 20 hours or longer.

Example 13 The laser devices having the same constructions as those in Example 11 were fabricated, except that the second layer composing the n-side cladding layer 14 consisted of GaN doped with Si to 1X1lO/cm 3 The present laser devices had the similar 10 properties to those in Example 11.

•Example 14 The laser devices having the same constructions as those in Example 11 were fabricated, except that the second layer *e composing the n-side cladding layer 14 consisted of undoped GaN.

The present laser devices had the similar properties to those in Example 11.

Example The laser devices were fabricated in the same manner as in Example 9, except that the 0.4pm-thick n-side cladding layer 14 consisting of only n-type Al 0 .2Gao.,N doped with Si to lX10"1/cm 3 was grown. That is, the present laser devices had the basic constructions as described in table 1, except that the p-side cladding layer 19 had a superlattice structure with a total thickness of 0.4 m composed of the 20-angstrom-thick first layers consisting of p-type A10.2Ga0.8N doped with Mg to 1X10 2 /cm 3 and the 20-angstrom-thick second layers consisting of p-type GaN doped 89 wi~ Mg C:0 L(i0 1 cm 1 a-,Id ffzhr teT Z Z: Ze c 0 ac lae 2 0 Ia d a' t1'ickness 0 1 L30 an~s t roms and consis ted a doced wj- -gat 2XLOzO/cm' Like Examptle L. The continuous emi~ssion a a 7e Leng thoaz 4 03 5 r-was aobs e red a c the thze sholid currZen t de-ns i ty aoff 3 .4 kA/ =2 The thres hoid vol1t age was 53. I: and the L lffe-ti--me was 20 hours or longer.

-Xammial 16 The laser devices were fabricated in the same mtar'mer as in Exarnmle 13, except that the o-side cladding laver 19 had :10 a sumerlattice structure with a total th ickne ss ao- 0 .3 5 o bt ainead by laminating the 6-angstrom-thick ifirst lavers (l.G 0 3 N and the 4Q-ar-gstromt-th ick second layers (Gaf'f) -The t-hreshold valtage t-enrded to rise a little. The ifetime was 20 hours or longer.

(Ekamples 17, 18 and 19 have been deleced] ExamoLe 2 with the same nrWceduzes as n Example 9, cne a.-side lih wavequide Layer 15 hada, superia~ca struzure r4LZ:. a total.

thicness of 900 anaszwomr obtained by laminating the angstrom-thick first layers consisting of undaped G-aff and the second layers consIs ting of undaped !n,.Ga, 3 .r i In addition, the p-side light waveguide layer 18 also had a superlattice structure with a total thickness of 800 angstrom obtained by laminating the 20-angstrom-thick first layers consisting of undoped GaN and the 20-angstrom-thick second layers consisting of undoped In 0 .Ga, 9 N. That is, the present laser devices had the basic constructions as described in table 1, except that the n-side cladding layer 14, the n-side light waveguide layer the p-side light waveguide layer 18 and the p-side cladding layer 19 had a superlattice structure respectively and further, 10 the p-side contact layer 20 had a thickness of 150 angstrom and Sconsisted of p-type GaN doped with Mg to 2X10 20 /cm' like Example 1. The continuous emission at a wavelength of 405 nm was observed at the threshold current density of 2.9 kA/cm. The threshold voltage was 4.4V and the lifetime was 60 hours or longer.

Example 2-1 The present example will be described on the basis of LED devices as shown in Fig. 1. With the same procedures as in Example 1, a 200-angstrom-thick buffer layer 2 consisting of GaN was grown on a sapphire substrate 1, and subsequently a 5 g m-thick contact layer consisting of n-type GaN doped with Si to IX10' 9 /cm 3 was grown. Next, a 30-angstrom-thick active layer 4. having a single quantum well structure and consisting of In0.4Ga0.6N was grown.

(p-side superlattice layer) Next, with the same procedures as in Example 1, a first layer consisting of p-type Al.

0 Ga. N doped with Mg to 1X10O/cm 3 was grown, and subsequently, a angstrom-thick second layer consisting of p-type GaN doped with Mg to 1XlO"/cm 3 And then, a p-side cladding layer 5 having a superlattice structure with a total thickness of 0.4 pm was grown.

The thickness of the p-side cladding layer 4 is not limited to a particular value and preferably within the range of 100 angstrom to 2 um, more preferably 500 angstrom to 1 pm.

Next, a 0.5 ur-thick p-type GaN layer doped with Mg to 1X10 2 /cm' was grown on the p-side cladding layer 5. After the 10 growth, the wafer was removed out of the reactor and the annealing was performed in the same manner as in Example 1. Then, the etching was performed from the side of the p-side contact layer 6 to expose the surface of the n-side contact layer 3 on which a n-electrode 9 was to be formed. A 200-angstrom-thick p-electrode consisting of Ni-Au was formed on the almost whole surface of the top pside contact layer 6. Ap-pad electrode consisting ofAu was formed on the whole surface electrode 7. An-side electrode 9 consisting of Ti-Al was formed on the exposed surface of the n-contact layer.

The wafer on which the electrodes were formed in the above-mentioned way were cut into chips which were 350 by 350 pm square to obtain LED devices. The green-emission at a wavelength of 520 nm was observed at If of 20mA and Vf was 3.2V. On the contrary, LED devices having a p-side cladding layer 5 consisting of only Mg-doped A1.

0 2 Gao.

0 N showed Vf of 3.4V. Moreover, The withstand static voltage of the present example was two times better.

Example 22 The LEDs were fabricated in the same manner as in Example 21, except that the p-side cladding layer 5 had superlattices with a total thickness of 0.25 pm obtained by laminating twenty-five first layers and twenty-five second layers consisting GaN doped with Mg to 1 X10 20 /cm. The LEDs had similar properties to those in Example 21.

Example 23 The LEDs were fabricated in the same manner as in Example 21, except that the p-side cladding layer 5 had superlattices with 0 a total thickness of 0.25 pm obtained by laminating 100o angstrom-thick first layers and 70-angstrom-thick second. Vf.was 3.4V, but The withstand static voltage was superior to that of the conventional devices by 20 Example 24 With the same procedures as in Example 21, for growing the n-side contact layer 3, the 60-angstrom-thick first layer consisting of n-type AI0.

2 Go.,N doped with Si to 2 X 10"/cm 3 was grown and the 40-angstrom-thick second layer consisting of undoped GaN was grown, and five-hundred first layers and five-hundred second layers were laminated by turns to obtain superlattices with a total thickness of 5 um. .The LEDs were fabricated in which other constructions were the same as those in Example 12. Vf decreased to 3.1V at If of 20mA. The withstand static voltage was 2.5 times better than that of the conventional LEDs.

Example The LEDs were fabricated in the same manner as in Example 23, except that the p-side cladding layer 5 was composed of superlattices with a total thickness of 0.3 pun obtained by laminating twenty-five 60-angstrom-thick first layers (A10.2Gao.

0

N)

and twenty-five 40-angstrom-thick second layers, by turns. Vf was 3.2V and The withstand static voltage was two times better than that of the conventional LEDs.

Example 26 10 First, a 300 Ipm-thick GaN layer doped with Si to 10/cm 3 was grown on a sapphire substrate using MOVPE method or HVPE method, and then the sapphire substrate was removed to C fabricate a Si-doped GaN substrate 101 having a thickness of 300 pm. The GaN substrate 101 was obtained by growing a nitride semiconductor layer to a thickness of 100 pm or more on a substrate which is not a nitride semiconductor and by removing the substrate.

The GaN substrate may be made of undoped GaN or n-type impurity -doped GaN. In the case of doping a n-type impurity, the impurity was usually doped within the range of 1X10 1 /cm 3 to 1X10 1 /cm 3 to obtain a GaN substrate having a few defect.

After the fabrication of the GaN substrate 101, the temperature was adjusted to 1050°C and a 3 pm-thick third buffer layer 113 consisting of n-type GaN doped with Si to 3X101 8 /cm' was grown. The third buffer layer corresponds to the n-side contact layer 14 as shown in Figs. 1 and 2. However, an electrode is not on the buffer layer and thus, the third buffer layer 3 is not referred to a contact layer. The first layer may be grown at a low temperature in the same manner as in Example 1 between the GaN substrate 101 and the third buffer layer 113 and if the first layer is grown, the thickness may be preferably 300 angstrom or less.

The 500-angstrom-thick crack-preventing layer 13 consisting of InO.Gao, 9 N doped with Si to 5X10"/cm 3 of Si was grown on the third buffer layer 113 in the same manner as in example 1.

10 Next, a n-side cladding layer was grown which was r composed of superlattices with a total thickness of 0.4 mn obtained by laminating 20-angstrom-thick first layers consisting of ntype A1 0 .2Ga 0 .aN doped with Si to 5X10 1 /cm' and second layers consisting of GaN doped with Si to 5 X 10 8 /cm 3 by turns 100 times.

Next, a 0.1 um-thick n-side light waveguide layer consisting of n-type GaN doped with Si to 5X10 1 '/cm 3 was grown in the same manner as in Example 1.

Next, a 25-angstrom-thick well layer consisting of undoped In.

0 2 Ga 0 .N was grown and a 50-angstrom-thick barrier layer consisting of undoped GaN was grown. They were grown by turns, respectively two times. And finally a well layer was grown on the top, with the result that an active layer 16 having a multi-quantum-well-structure (MQW) with a total thickness of 175 angstroms was grown.

Next, in the same manner as in Example 1, a p-side cap 1 1 layer 17 consisting of p-type Al 0 .3Ga 07 N doped with Mg to 1 X 10 2 /cm' was grown to a thickness of 300 angstroms and a p-side light waveguide layer 18 consisting of p-type GaN doped with Mg to 1 20 /cm 3 was grown to a thickness of 0.1 pm.

Next, in the same manner as in Example 1, a p-side cladding layer 19 was formed which was composed of superlattices with a total thickness of 0.4 pm obtained by laminating angstrom-thick first layers consisting of p-type Alo.

0 Ga 0 o.N doped with Mg to 1X1l0 2 /cm 3 of Mg and 2 0-angstrom-thick second layers consisting of p-type GaN doped with Mg to 1X10 20 And finally, a 150-angstrom-thick p-side contact layer 20 consisting of ptype GaN doped with Mg to 2 X 10 2 /cm 3 was grown on the p-side cladding layer 19.

After the reaction was completed, the annealing at 700'C was performed. Then, in the same manner as in Example 1, the top p-side contact layer 20 and p-side cladding layer were etched into a ridge-geometry with a stripe width of 4 pm with the RIE apparatus.

Next, in the same manner as in Example 1, a p-electrode :21 consisting Ni and Au was formed on the almost whole surface of the stripe ridge of the p-side contact layer 20 and a n-electrode 23 consisting of Ti and Al was formed on the almost back surface of the GaN substrate 101.

Next, as shown in Fig. 6, an insulating layer 25 was formed on the p-side cladding layer 19 except for the p-electrode 21 and a p-pad electrode was formed which connected to the pelectrode 21 electrically via the insulating layer After formation of the electrode, the GaN substrate 101 was cleaved into bars perpendicularly respect to the p-electrode 21 to fabricate facets of a resonator on the cleaved facet. The cleaved facet of the GaN substrate was M plane. A dielectric multi-layer film consisting SiO, and TiO 2 was formed on the cleaved facet and finally, the bar was cut parallel to the p-electrode, resulting in laser chips as shown in Fig. 6. Next, the chips were set face-up (in the state that the substrate was faced to the heat sink) onto the heat sink and the p-pad electrode 22 was connected by wire-bonding. The laser was tried at room temperature. The continuous emission at a wavelength of 405nm was observed at the threshold current.density of 2.5kA/cm' and the threshold voltage of 4.0V at room temperature. The lifetime was 500 hours or longer.

This results from usage of GaN substrate to reduce the number of threading dislocations.

The examples of the present invention will be described, optionally in connection with the following drawings. Fig. 4 is a perspective view showing the shape of the laser devices as shown in Fig. 3.

Example 27 A GaN substrate 100 was prepared by growing a single crystal consisting of GaN to a thickness of 50 un on a buffer layer consisting of GaN on a C-plane sapphire substrate. The GaN substrate 100 was set within the reactor and the temperature was increased to 1050 0 C. And using hydrogen as a carrier gas, ammonia and TMG (trimethylgallium) as a source of GaN and silane gas as a source of impurity, a 4 pm-thick n-side buffer layer 11 consisting of GaN doped with Si to lXl0'/cm' was grown on the GaN substrate 100. The buffer layer also acts as a contact layer for forming the n-electrode when light emitting devices having a structure as shown in Fig. 3 are fabricated. Further, the n-side buffer layer is that is grown at a high temperature and is distinguished from a buffer layer having a thickness of 0.5 pm or less which is grown at a low temperature of 900°C or less directly on the substrate made of the material, such as sapphire, SiC and spinel, which is S 10 different from nitride semiconductors.

(n-side cladding layer 14 superlattice layer) Subsequently, at 1050 0 C a 40-angstrom-thick first layer consisting of n-type A1 0 .2Ga 0 8 N doped with Si to 1X10/cm' was grown using TMA (trimethylammonium) TMG, ammonia and silane 15 gas. And then, silane gas and TMA were stopped and a angstrom-thick second.layer consisting of undoped GaN was grown.

A superlattice layer was constructed in a manner of the first layer the second layer the first layer the second layer One-hundred first layers and one-hundred second layers were laminated by turns. Thus, the n-side cladding layer 14 composed of superlattices having a total thickness of 0.8 pm was grown.

(n-side light waveguide layer Subsequently, silane gas was stopped and at 1050 0 C, a 0.1 pm-thick n-side light waveguide layer 15 consisting of undoped GaN was grown. The n-side light waveguide layer acts as a light waveguide layer of an active layer and preferably, consists of GaN or InGaN and has a thickness of 100 angstroms to 5 pim more preferably of 200 angstroms to 1 Unm. This n-side light waveguide layer may be composed of undoped superlattices. In the case of the superlattice layer, the band gap energy is larger than that of the active layer and smaller than that of the n-cladding layer consisting of Al. 2 Gao.

0

N.

(active layer 16) Next, an active layer 16 was grown using TMG, TMI and ammonia as a source of InGaN. For the active layer 16, the 10 temperature was maintained at 800 0 C and a 25-angstrom-thick well layer consisting of undoped In 0 Ga. N was grown. Next, at the same temperature, the molar ratio of TMI was changed and a angstrom-thick barrier layer consisting of In 0 .o 0 Ga 0 9 sN was grown.

These operations were repeated two times. And finally, an well 15 layer was laminated, with the result that an active layer having a multi-quantum-well (MQW) structure with a total thickness of 175 angstroms was grown. The active layer may be undoped like in the present example, or doped with donor impurities and/or ptype impurities. Both of the well layer and the barrier layer may be doped with impurities or either of them may be doped.

(p-side cap layer 17) Next, the temperature was increased to 1050°C and a 3 0 0 -angstrom-thick p-side cap layer consisting of p-type Al 0 3 Gao.,N doped with Mg to 1Xl102/cm 3 and having a larger band gap energy than the p-side light waveguide layer was grown using TMG, TMA, ammonia and Cp2Mg (cyclopentadienyl magnesium). The p-side cap 100 layer has a thickness of 0.1 pm or less and the lower limit is not specified, but the thickness is preferably 10 angstroms or more.

(p-side light waveguide layer 18) Subsequently, Cp2Mg and TMA were stopped and at 10500C, a 0.1 pm-thick p-side light waveguide layer 18 consisting of undoped GaN and having a smaller band gap energy than the p-side cap layer was grown. The layer acts as a light waveguide layer of the active layer and preferably consists of GaN or InGaN, like the n-side light waveguide layer 15. And the p-side light waveguide layer may be a superlattice layer consisting of a undoped nitride semiconductor or a nitride semiconductor doped with an impurity. In the case of the superlattice layer, the band gap energy is larger than that of the well layer of the active layer 15 and is smaller than that of the p-side cladding layer consisting of Al 0 .2Gao. N.

(p-side cladding layer) Subsequently, at 10500C, a 40-angstrom-thick third layer consisting of p-type Al0 2 .Ga 0 o.N doped with Mg to 1X10 2 0 /cm' was grown. Then, only TMA was stopped and a fourth layer consisting of undoped GaN was grown. These operations were repeated, respectively 100 times to grow a pside cladding layer 19 composed of superlattices with a total thickness of 0.8 um.

(p-side contact layer Finally, at 1050°C, a 150-angstrom-thick p-side contact layer 20 consisting of p-type GaN doped with Mg- to 2X10 2 0 /cm 3 was grown on the p-side cladding layer 19. The p-side contact layer may consist of p-type InxAlyGa__.N 0Y, X+Y_1), preferably GaN doped with Mg to 2XX2O/cm' to obtain the most preferable ohmic contact to the p-electrode 21. The p-side contact layer 20 was close to the p-side cladding layer 19 having a superlattice structure including p-type AlyGa~,N and consists of a nitride semiconductor having a small band gap energy and the thickness of the p-side contact layer 20 was as thin as 500 10 angstroms or less. Therefore, the carrier density of the p-side contact layer 20 was high and a good ohmic contact between the a p-side contact layer and the p-electrode was achieved, with the result that the threshold current and voltage of the devices decreased.

15 The wafer on which the nitride semiconductors were grown in the above-mentioned manner was annealed at 7000C within the nitrogen atmosphere in the reactor to make the layers doped with p-type impurities less resistive. The annealing method disclosed by U.S. Patent 5,306,662 is employed in this Example.

After annealing, the wafer was removed out of the reactor and as shown in Fig. 3, the top p-side contact layer and p-side cladding layer 19 were etched with RIE apparatus into a ridge geometry with a stripe width of 4 pm. Thus, since the layers above the active layer were made to have a stripe ridge geometry, the emission from the active layer was focused under the stripe ridge and the threshold value decreased. Particularly, the layers 102 above the p-side cladding layer 19 composed of superlattice layers are preferably made to have a ridge geometry.

Next, a mask was formed on the surface of the ridge and the etching was performed with a RIE apparatus until the n-side buffer layer was exposed. The exposed n-side buffer layer 11 also acts as a contact layer for forming a n-electrode 23. In Fig. 3, the n-side buffer layer 11 is shown as a contact layer. However, the etching can be performed until the GaN substrate 100 is exposed and the exposed GaN substrate 10.0 can be a contact layer.

10 Next, a stripe p-electrode 21 consisting of Ni and Au was formed on the top surface of the ridge of the p-side contact layer 20. The materials for the p-electrode 21 to obtain preferable ohmic contact to the p-side contact layer may include Ni, Pt, Pd, Ni/Au, Pt/Au, Pd/Au and so on.

15 On the other hand, a stripe n-electrode 23 consisting of Ti and Au was formed on the exposed surface of n-side buffer layer 11. The materials for the n-electrode 23 to obtain preferable ohmic contact to the GaN substrate 100 may include metals such as Al, Ti, W, Cu, Zn, Sn, In and the like or alloys thereof.

Next, as shown in Fig. 3, an insulating layer 25 was formed on the surface of the exposed nitride semiconductors between the p-electrode and n-electrode 23. And a p-pad electrode 22 and n-pad electrode were formed which were connected to the p-electrode 21 electrically via the insulating layer 25. The p-pad electrode 22 enlarges the substantial surface area of the p-electrode 21 to enable the wire-bonding or die-bonding of the p-electrode. On the other hand, the n-pad electrode 24 prevents the n-electrode 23 from coming off.

The wafer on which the n-electrode and p-electrode were formed in the above-mentioned manner was is transferred to the polishing machine. The sapphire substrate on whose side the nitride semiconductor was not formed was lapped with an diamond abrasive to a substrate thickness of 70 upm. After lapping, the surface of the substrate was further polished by 1 pm with a finer 10 abrasive, resulting in the mirror facet and the whole surface was metallized with Au/Sn.

Then, the Au/Sn side was scribed and cleaved into bars perpendicularly respect to the strip electrode to fabricate a resonator on the cleaved facet. A dielectric multi-layer film 15 consisting SiO 2 and TiO, was formed on the plane of the resonator and finally, the bar was cut parallel to the p-electrode, resulting Sin laser chips. Next, the chips were set face-up (in the state that the substrate was faced to the heat sink) onto the heat sink and each electrode was connected by wire-bonding. The laser was tried at room temperature. The continuous emission at a wavelength of 405nm was observed at the threshold current density of 2.0 OkA/cm 2 and the threshold voltage of 4. 0V at room temperature.

The lifetime was 100 hours or longer.

Example 28 Fig. 7 is a sectional view showing the structure of the laser devices according to another example of the present invention.

104 In this drawing, the devices which are cut in the perpendicular direction to the propagating direction of the emission are shown, like in Fig. 3. Example 28 will be described with reference to Fig. 7. In Fig. 7, identical reference numerals have been used to designate identical elements that are common to Fig. 3 and Fig.

4.

A 150-angstrom-thick single crystal consisting of GaN doped with Si to 5Xlo0 1 /cm 3 was grown via the buffer layer consisting of GaNon the C-plane sapphire substrate, so as to obtain 1. 0 a GaN substrate 100. A n-side buffer layer 11 was grown on the k GaN substrate in the same manner as in Example 27.

(Crack preventing layer 13) After the growth of the n-side buffer layer 11, the temperature was adjusted to 800 0 C and a 500-angstrom-thick crack 15 preventing layer consisting of In 0 .Ga 0 doped with Si to 5 X 10"/cm 3 was grown using TMG, TMI and ammonia as a source of InGaN and silane gas as a source of Si. The crack preventing layer 13 can be obtained by growing a nitride semiconductor containing In, preferably InGaN, and can prevent cracks in the nitride semiconductor layers containing Al. The crack preventing layer may preferably have a thickness ranging 100 angstroms and 0.5 pm. If the crack preventing layer has a thickness less than 100 angstroms, the layer is hard to prevent cracks. If the layer has a thickness more than pm, the crystal itself tends to change into black.

After the growth of the crack preventing layer 13, a n-side cladding layer 14 composed of modulation-doped 105 superlattices 14 and an undoped n-side light waveguide layer were grown in the same manner as in Example 27.

(n-side cap layer Subsequently, a 300-angstrom-thick n-side cap layer consisting of n-type AI 0 3 Gao 7 ,N doped with Si to 5X10"/cm 3 and having a larger band gap energy than the n-side light waveguide layer 15 was grown using TMG, TMA, ammonia and silane gas.

After this, with the same procedures as those in Example 27, a p-side cap layer 17, an undoped p-side light waveguide layer 1 0 18, a p-side cladding layer 19 composed modulation-doped superlattices and a p-side contact layer 20 were grown.

After the growth of nitride semiconductor layers, annealing was performed in the same manner to make the p-type impurities doped layers less resistive. After annealing, as shown 15 in Fig. 7, the top p-side contact layer 20 and p-side cladding layer were etched into a ridge geometry with a stripe width of 4 pm.

After forming a ridge, a stripe p-electrode 21 consisting of Ni/Au was formed on the top surface of the ridge of the p-side contact layer 20. An insulating layer 25 consisting of SiO 2 was formed on the surface of the top nitride semiconductor layer except for the p-electrode 21. A p-pad electrode 22 was formed which was connected electrically to the p-electrode 21 via the insulating layer The wafer on which the p-electrode was formed in the above-mentioned manner was transferred to the polishing machine.

The saoo'n±:e substrate was removed by poii shinga to expose tte sur~aeoc-l the GaiM substrate 100. Ar n-electrode 2] consisting offTiAlwas ffored on the almtost whole surfface off the exposed GaIN substrate.

S After fforlrLing th~e electrodes, the GaN substrate was cleaved with respect to 'M-planie (which corresponds. to a side plane off a hexagonal coluirn in the case that the nitride semiconductor is represented according to a hexagonal system) The dielectric multilayers consisting off SiO,. and TiOz were formed on the cleaved ffacet. The bar was cut parallel to the p-electLrode into the laser ch~ips. For these chips, a continuous emission at room temperat'ure was observed. These devices had similar properties to those according to Example 27.

Example 29 is With the same procedures as in Exampole 27, after growing the n-side buffer layer a crack-pre-7enting layer 13 was grown ini the same mer as in Example 28. Next, a 0. 4-him-thick n-side cladding laver 14 composed off a single layer consisting ofAl,Ga, 7

N

doced with Si to 1 X< 10"/cm' was grown on the crack preventing layer.

The other constructions were the same as those in Example 27. For the ffabricated laser devices, the laser was c bse.-ved at room te-mrOerature and the liffetime was a little shorter than that off the laser devices in Example 27.

t(:campJia 30 has been delecedj 107 Examnple 31 r t he s ame aoc edu -e s a s nEx amplie 2 7, is te a d tne c add~ ng laye 14 av a une L~ ice scructure, a 0 -4 -Pm- thc k r-s ide c laddin-g l ayer, 14 C si1 fAL.:a oe wth, Si "ao lXlOtB/m was gz'rw. -Ad istead o-L the P-side cladding layVer having a superlattice structure, a Q.4-iLm-thick 9-side claddiLng iayer con-sistig c'f AQ.Ga,3.N doped with mfg to 1 x 102/=3 was grown. The n-side light waveguide layer 15 was composed off sum-erlattices with a total thickness off 0.12 Pm obtained by laminating 3O-anigstrom-thick layers consistn ofGNded ith Si~~stn to Ga laesdnitnope~d wed T-j.QLC~a.,N. The p-side light waveguide layer 18 was composed off SDlerlattices with a total thicmess off 0-.12 obtained by *laminating 3O-angstZOM-tbI Ck layers consisting off undooed 0 TVGa 3Naid0-angstrom-thick layers consistigof -N oe with Mg to I XlO1 7 off .The other cans Cructions off the ffabr-icated laser devices were the same as those in .Examole 27.

9 The:'Iaser was observed at room temoerature and the liffetime was a little sh~orter than that. off the laser devices in Example 27.

20 Example 32 W-ith the. same procedures as in Example 27, the n.-side buffffer laver 11 was composed off superattie ih oa thickness of 1.2 pm obtained by laminating 3 0-angstrom-thick undoped GaN layers and 30-angstrom-thick layers consisting of Al 05 Ga 0 sN doped with Si to 1 X O1/cm'. The layers above the n-side cladding layer were grown in the same manner as in Example 27 and the laser devices were fabricated. When the n-electrode was formed, the surface exposed by etching was positioned somewhere of the superlattices with a total thickness 1.2 pm and the nelectrode was formed on the exposed superlattice layer.

A

continuous emission was observed and the threshold value was a little lower than that of the laser devices in Example 27..The lifetime was 1000 hours or longer.

Example 33 Fig. 8 is a sectional view showing the structure of the laser devices according to another example of the present invention.

In this drawing, identical reference numerals have been used to designate identical layers that are common to other drawings.

Example 33 will be described with reference to Fig. 8.

With the same procedures as in Example 27, a 200angstrom-thick GaN buffer layer (not shown) was grown on a (0001) C-plane sapphire substrate 30 with 2-inch O,at 500 0 C and then, a 5 pm-thick undoped GaN layer 31 was grown at 1050°C. The thickness is not limited to 5 pm and may be preferably over the thickness of the buffer layer and 10 pmor less. Thematerial of the substrate may include sapphire, SiC ZnO, spinel, or other materials which are different fromnitride semiconductors and are known for growing nitride semiconductors such as GaAs.

Next, after growing the undoped GaN layer 31, the wafer was removed out of the reactor. A striped photomask was formed on the surface of the GaN layer 31 and with a CVD apparatus, 0.1-pm-thick SiOz protective film 32 was patterned to form um-wide stripe windows with a periodicity of 5 im. Fig. 8 is a sectional view showing the partial structure of the wafer when cut perpendicularly to the longitudinal direction of the stripes.

The examples of the mask pattern may include stripes, dots or checks and the exposed parts of. the undoped GaN layer 31, that is, the parts on which the mask was not formed (windows) may preferably have a smaller area than the mask, so as to grow a GaN substrate 100 with less crystal defects. The materials of the mask may a include oxides such as silicon oxide silicon nitride (SiNiy) titanium oxide (TiOj) and zirconium oxide (ZrO) nitrides, or multi-layer film thereof, as well as metals having a melting point higher than 1200 0 C. These materials can stand at high temperatures ranging between 600aC and 1100 0 C at which nitride semiconductors can be grown and nitride semiconductors do not grow or are difficult to grow on the surface of the materials.

After forming the protective film 32, the wafer was set in the reactor again and a 10-pm-thick undoped GaN layer to be a GaN substrate 100 was grown at 1050 0 C. The preferable thickness of the GaN layer depends on the thickness and the size of the protective film 32 and the GaN had a thickness enough to grow laterally perpendicularly to the thickness direction) above the mask, so as to cover the surface of the protective film 32. In the case that the GaN substrate 100 was grown- in a manner that a GaN layer was laterally grown on the surface of the protective film 32 on which nitride semiconductor were difficult to grow, initially, the GaN layer did not grow on the protective film 32 and grew selectively on the undoped GaN layer 31 in the window regions. In the case that the GaN layer was continued to grow, the GaN layer grew laterally and covered the protective film 32 and the GaN layers grown from the neighboring windows linked with each other, resulting in that the GaN layer was grown on the protective film 32. That is, the GaN layer was laterally grown on the GaN layer 31 via the protective film 32. Crystal defects in the GaN layer 31 grown on the sapphire substrate 30 and the number of crystal defects in the GaN substrates 100 grown on the protective film 32 were important. That is, extremely large number of crystal defects were caused in the nitride semiconductor layers grown on an auxiliary substrate due to the lattice mismatch between S-the auxiliary substrate and the nitride semiconductors and the crystal defects threaded through the nitride semiconductors grown sequentially upward to the surface. On the other hand, in Example 33, The GaN substrate 100 grown laterally on the protective film 32 was not directly on an auxiliary substrate and was obtained in a manner that the GaN layer grown from the neighboring windows linked to each other during growing laterally on the protective film 32. Therefore, the number of crystal defects decreased extremely, compared with that in the semiconductor layers grown on an auxiliary substrate. Thus, a mask was partially formed on Ill the nitride semiconductor layer grown on an auxiliary substrate and a GaN layer was grown laterally on the mask, resulting in a GaN substrate having much less crystal defects than the GaN substrate according to Example 27. Actually, the number of the crystal defects in the undoped GaN layer was 10" 0 /cm 2 or more, while the number of crystal defects in the GaN substrate according to Example 33 was 10 6 /cm 2 or less.

After forming a GaN substrate 100 in the above-mentioned manner, a 5-um-thick n-side buffer layer, besides acting as a 10 contact layer 11, consisting of GaN doped with Si to 1X1lO'/cm 3 was grown on the GaN substrate in the same manner as in Example 27. And then, a 500-angstrom-thick crack preventing layer 13 consisting of In.

1 Gao.,N doped with Si to 5 X 0'/cm 3 was grown. The crack preventing layer 13 can be omitted.

15 (n-side cladding layer 14 composed of superlattices having a highly doped center part) Next, a 20-angstrom-thick undoped GaN layer was grown using TMG and ammonia gas at 1050 0 C to form a second nitride the same temperature, adding TMA, a 5-angstrom-thick undopedAla.Gao.gN layer was grown and subsequently, adding silane gas, a angstrom-thick Al 0 a.Gao.

0 N layer dopedwith Si to 1 X 10 9 /cm 3 was grown, then, stopping Si, a 5-angstrom-thick undopedAl.

0 1 Ga 0 .gN layer being grown to form a 30-Uim-thick first nitride semiconductor layer having a large band gap energy. Thereafter, in the same manner, the second nitride semiconductor layers and the first nitride semiconductor layers were formed by turns repeatedly. In Example 112 33, one-hundred-twenty second layers and one-hundred-twenty first layers were laminated by turns to form a n-side cladding layer 14 of superlattices with a thickness of 6 um.

Next, a n-side light waveguide layer 15, an active layer 16, a p-side cap layer 17, and a p-side light waveguide layer were grown sequentially in the same manner as in Example 27.

(p-side cladding layer 19 composed of superlattices having a highly doped center part) Next, a 20-angstrom-thick undoped GaN layer was grown 10 using TMG and ammonia gas at 1050 0 C to form a fourth nitride semiconductor layer having a small band gap energy. Next, at. the same temperature, adding TMA, a 5-angstrom-thick undoped Al 0 .Gao.gN layer was grown and subsequently, adding Cp2Mg, a angstrom-thick Alo.LGa.gN layer doped with Mg to 1 X 10 20 /cm 3 was grown, 15 then, stopping Cp2Mg, a 5-angstrom-thick undoped Al 0 .Gao.gN layer being grown to form a 30-pm-thick third nitride semiconductor layer hcving a large band gap energy. Thereafter, in the same manner, the fourth nitride semiconductor layers and the third nitride semiconductor layers were formed by turns repeatedly. In Example 33, one-hundred-twenty fourth layers and one-hundred-twenty third layers were laminated by turns to form a n-side cladding layer 19 of superlattices with a thickness of 6 pm.

And finally, a p-side contact layer 20 was grown in the same manner as in Example 27 and then, the wafer was removed out of the reactor. The annealing was performed and the layers above the p-side cladding layer were etched into a stripe ridge geometry.

o- 113 Next, as shown in Fig. 8, etching was performed symmetrically with respect to the ridge to expose the surface of the n-side buffer layer on which a n-electrode was to be formed and a n-electrode was formed. On the other hand, a stripe pelectrode was also formed on the top surface of the ridge of the p-side contact layer 20. Thereafter, in the same manner as in Example 27, laser devices were fabricated. The threshold current density and voltage decreased by 10 compared to those in Example 27. The continuous emission at a wavelength of 405 nm was observed 10 for 2000 hours or more. This was mainly because the enhancement of the crystal quality in the nitride semiconductors due to-the e GaN substrate 100 having less crystal defects. In Fig. 8, in the case of the GaN substrate 100 having a thickness of, for example, 80 pm or more, the layers between an auxiliary substrate 30 and 15 the protective film 32 can be omitted.

Example 34 S.b With the same procedures as in Example 33, the n-side cladding layer was composed of superlattices with a total thickness of 0.6 pm obtained by laminating 20-angstrom-thick undoped GaN S* o layers and 20-angstrom-thick Al 0 .Ga 0 .gN layers doped with Si to 1 instead of superlattices having a highly doped center part.

On the other hand, the p-side cladding layer 19 was composed of superlattices with a total thickness of 0.6 um obtained by laminating 20-angstrom-thick undoped GaN layers and angstrom-thick Al 0 o.Gao.,N layers doped with Mg to 1 X 10 20 /cm instead 114 of superlattices having a highly doped center-part. The other constructions were the same as those in Example 33. For the fabricated laser devices, the threshold value decreased a little and the lifetime was similarly 2000 hours or longer, compared to those of Example 33.

Example With the same procedures as in Example 33, the n-side cladding layer 14 was composed of superlattices with a total thickness of 0.6 pum obtained by laminating 25-angstrom-thick GaN 10 layers doped with Si to lXlO"/cm' and 25-angstrom-thick undoped Al.

0 Ga 0 o.N layers respectively by turns. On the other hand, the -side cladding layer 19 was composed of superlattices with a total Sthickness of 0.6 gm obtained by laminating 25-angstrom- thick GaN :layers doped with Mg to 1X10 20 /cm 3 and 25-angstrom-thick undoped Alo.1Ga 0 9 ,N layers respectively by turns. The other constructions were the same as those in Example 33. The fabricated laser devices had similar properties and lifetime to those of Example 33.

Example 36 With the same procedures as in Example 33, the n-side cladding layer 14 was composed of superlattices with a total thickness of 0.6 pm obtained by laminating 25-angstrom-thick GaN layers doped with Si to 1Xl10 9 /cm 3 and 25-angstrom-thickA1 0 l.Gao.,N layers doped with Si to 1X10 17 /cm 3 respectively by turns. On the other hand, the p-side cladding layer 19 was composed of superlattices with a total thickness of 0.6 pm obtained by laminating 25-angstrom- thick GaN layers doped with Mg to 1X 115 and 25-angstrom-thick Al 0 .LGao.,N layers doped with Mg to 1X10"/cm 1 respectively by turns. The other constructions were the same as those in Example 33. The fabricated laser devices had similar properties and lifetime to those of Example 33.

Example 37 With the same procedures as in Example 33, the n-side cladding layer was composed of a 0.6 pm-thick Al 0 1 Ga.,N layer doped with Si to 1X101/cm 3 instead of superlattices. On the other hand, the p-side cladding layer 19 was composed of superlattices with 10 a total thickness of 0.6 im obtained by laminating S angstrom-thick GaN layers doped with Mg to 1X10 2 0 /cm' and angstrom-thick Alo 0 .Gao.

9 N layers doped with Mg to 1Xl1O'/cm 3 respectively by turns. The other constructions were the same as those in Example 33. For the fabricated laser devices, the 15 threshold values increased a little and the lifetime was similarly 1000 hours or longer, compared to those of Example 33.

Example 38 With the same procedures as in Example 33, the n-side cladding layer and p-side cladding layer were modulation-doped superlattices (in which the center part was not highly doped and the impurity density was almost even within the layer) And the n-side buffer layer 11 was composed of superlattices with a total thickness of 2 pm obtained.by laminating Al 0 o.oGao.

9 sN layers doped with Si to lXlO"/cm 3 and thick undoped GaN layers respectively by turns. The other constructions were the same as those in Example 33. For the 116 fabricated laser devices, the threshold values decreased a little and the lifetime was 3000 hours or longer, compared to those of Example 33.

Example 39 With the same procedures as in Example 33, the.n-side cladding layer 14 was composed of superlattices with a total thickness of 0.6 um obtained by laminating undoped GaN layers and 20-angstrom-thick Al 0 a.Ga 0 .gN layers doped with Si to 1X10 9 /cm 3 respectively by turns. The n-side light 10 waveguide layer 15 was composed of superlattices with a total thickness of 0.1 p.u obtained by laminating 25-angstrom-thick GaN layers doped with Si to lXl0"/cm' and 25-angstrom-thick undoped Al-0.sGa 095 N layers respectively by turns.

On the other hand, the p-side light waveguide layer was 15 composed of superlattices with a total thickness of 0.1 m obtained by laminating 25-angstrom-thick GaN layers doped with Mg to 1 X10 9 /cm' and 25-angstrom-thick undoped Ala1 0 .Gao.

9 5 N layers respectively by turns. Next, the p-side cladding layer was composed of superlattices with a total thickness of 0.6 pm obtained by laminating 20-angstrom-thick undoped GaN and Al. Ga 0 oN layers doped with Mg to 1 X 10/cm 3 respectively by turns.

The other constructions were the same as those in Example 33. For the fabricated laser devices, the threshold values decreased a little and the lifetime was 3000 hours or longer, compared to those of Example 33.

Example 117 Example 40 provides laser devices fabricated using a GaN substrate like Example 33.

That is, the laser devices according to Example 40 were fabricated by forming the following semiconductor layers on the GaN substrate 100 which was formed in the same manner as in Example.

First, a 2-pm-thick n-side contact layer (n-side second nitride semiconductor layer) consisting of n-type GaN doped Si to 1X10"/cm' or more was grown on the GaN substrate 100. This layer may be composed of superlattices consisting of undoped GaN 10 and Si doped AlGa_.-N (0<X:0.4) Next, after growing the n-side contact layer, at 800 0

C,

using TMG, TMI, ammonia and silane gas in the nitrogen atmosphere, a 500-angstrom-thick crack preventing layer consisting of InO.

0 Gaa.

9 N doped with Si to 5X10l'/cm 3 was grown. The crackpreventing layer consisted of n-type nitride semiconductor containing In, preferably InGaN, so as to prevent the crack from threading the nitride semiconductor layers containing Al to be grown thereafter. The thickness of the crack preventing layer may preferably range between 1000 angstroms and 0.5 pm. If the thickness is thinner than 100 angstroms, the crack preventing layer is difficult to prevent cracks. If the thickness is thicker than um, the crystal itself tends to turn into black.

Subsequently, at 1050 0 C, using TMA, TMG, ammonia and silane gas, a 40-angstrom-thick n-type Alo .Ga 0 8 N layer doped with Si to 1X10/cm 3 and a 40-angstrom-thick undoped GaN layer were grown. One-hundred of these layers were laminated respectively by turns to grow a n-side cladding layer of superlattices with a total thickness of 0.8 pm.

Subsequently, a 0.1 um thick n-side light waveguide layer consisting of undoped A1 0 .asGao.

5 N was grown. This layer acts as a light waveguide layer to guide the waves of light emitted from the active layer and may be undoped or doped with n-type impurity. This layer may be composed of superlattices consisting of GaN and AlGaN.

Next, a 400-angstrom-thick active layer consisting of 0 undoped In 0 .o 0 Gao., 9 N was grown.

Next, a 300-angstrom-thick p-side cap layer consisting of p-type Al 0 .2Gao.aN doped with Mg to 1X 10"/cm and having a larger 9 band gap energy than the p-side light waveguide layer to be formed thereafter was grown.

15 Next, a 0.1 pm-thick n-side light waveguide layer S. consisting of Al 0 0 .Gao.

99 N and having a smaller band gap energy than the p-side cap layer was grown. This layer acted as a waveguide for the active layer. The layer may be composed of superlattices consisting of nitride semiconductors. In the case that the pside light waveguide layer is composed of superlattices, the band gap energy of the barrier layer having a larger band gap energy should larger than that of the active layer and smaller than that of the p-side cladding layer.

Subsequently, a p-side cladding layer composed of superlattices with a total thickness of 0.8 pm obtained by laminating 40-angstrom-thick p-type Alo.1Ga 0 .aN layers doped with Mg to lX10/cm' and 40-angstrom-thick undoped'GaN layers respectively by turns was grown.

Finally, a 150-angstrom-thick p-side contact layer consisting of p-type GaN doped with Mg to 1Xl0 2 0 /cm3 was grown on the p-side cladding layer. Particularly, in the case of laser devices, the p-side contact layer consisting of nitride semiconductors having a small band gap energy is in contact with the p-side cladding layer of superlattices containing AlGaN and has a thickness of as thin as 500 angstroms or less. Therefore, 10 the carrier density in the p-side contact layer is high and a good ohmic contact to the p-electrode is obtained, with the result that the threshold current and voltage tends to decrease.

The wafer on which nitride semiconductors were grown in the above-mentioned manner was annealed at a given temperature 15 to make the p-type impurity doped layers less resistive and removed out of the reactor. The top p-side contact layer and the p-side cladding layer were etched into a ridge geometry with a stripe width of 4 m. Thus, the layers above the active layer had a stripe r ridge geometry and the emission from the active layer focused under the stripe ridge, with the result that the threshold values decreased. Particularly, the layers above the p-side cladding layer of superlattices may preferably have a ridge geometry. The annealing method disclosed by U.S. Patent 5,306,662 is employed in this Example.

Next, a mask was formed on the surface of the ridge and the etching was performed with a RIE apparatus to expose the surface of the n-side contact layer, a stripe n-electrode consisting of Ti and Al being formed. On the other hand, a stripe p-electrode consisting of Ni and Au was formed on the top surface of the ridge of the p-side contact layer. Examples of electrode materials to obtain a good ohmic contact to the p-type GaN layer may include Ni, Pt, Pd, Ni/Au, Pt/Au, Pd/Au and so on. Examples of electrode materials to obtain a good ohmic contact to the n-type GaN may include metals such as Al, Ti, W, Cu, Zn, Snor In and alloys thereof.

Next, insulating layers consisting of SiO, were formed 10 on the exposed surfaces of the nitride semiconductor layers between the p-electrode and the n-electrode and a p-pad electrode was formed which was connected with the p-electrode electrically via the insulating layers. The p-electrode enlarged substantially the surface area of the p-electrode to enable wire-bonding and 15 die-bonding of the p-electrode side.

The wafer on which the n-electrode and p-electrode were f6rmed in the above-mentioned manner is transferred to the polishing machine. The sapphire substrate on whose side the :nitride semiconductors were not formed was lapped with a diamond abrasive to a substrate thickness of 70 pm. After lapping, the surface of the substrate was further polished by 1 pm with a finer abrasive, resulting in the mirror facet and the whole surface was metallized with Au/Sn.

Then, the Au/Sn side was scribed and cleaved into bars perpendicularly with respect to the stripe electrode to fabricate a facet of a resonator on the cleaved facet. A dielectric 121 multi-layer film consisting SiO, and TiO 2 was formed on the facet of the resonator and finally, the bar was cut parallel to the p-electrode, resulting in laser chips. Next, the chips were set face-up (in the state that the substrate was faced to the heat sink) onto the heat sink and each electrode was connected by wire-bonding. The laser oscillation was tried at room temperature.

The continuous emission at a wavelength of 368nm was observed at the threshold current density of 2.0kA/cm 2 and the threshold voltage of 4.0V at room temperature. The lifetime was 1000 hours 10 or longer.

Example 41 The laser device in Example 41 and the following examples was fabricated on the basis of the embodiment 4. The Example 41 will be described in connection with Fig. 9.

15 (underlying layer 302) The auxiliary substrate 301 made of sapphire with 20-inch 0 and a C-plane was set in the MOVPE reactor and the temperature was set to be 500"C. A 200-angstrom- thick buffer layer (not shown) made of GaN was grown using trimethylgallium S 20 (TMG) and ammonia (NH3). After the growth of the buffer.layer, the temperature was increased to 1050°C and a 4-um-thick underlying layer 302 made of the same GaN was grown.

(protective film 303) After the growth of the underlying layer 302, the wafer was removed out of the reactor and a stripe-shaped photomask was formed on the surface of the underlying layer. A 1-pm-thick protective film 303 made of SiO, was patterned to form stripe windows with a periodicity of 2pm on the underlying layer 302 with a CVD apparatus.

(nitride semiconductor substrate 304) After the growth of the protective film 303, the wafer was set again in the MOVPE reactor and the temperature was set to be 1050 0 C. A20-pum- thick nitride semiconductor substrate made of undoped GaN was grown using TMG and ammonia. On the surface of the resulting nitride semiconductor substrate, the crystal 10 defects developed parallel to the stripe-shaped protective film *s in the stripe center part of the protective film and in the stripe center part of the window. However, when the ridge of the laser device was formed later, the ridge stripe was formed not to be on the crystal defects, so as to prevent the developing of the 15 crystal defects into the active layer and enhance the reliability of the device.

(n-side buffer layer 311 which also functions as a n-side contact layer) Next, a 5-pm-thick n-side buffer layer made of GaN doped with Si to 3 X101'/cm' was grown on the second nitride semiconductor layer 4 using ammonia and TMG, and silane gas as an impurity gas.

(crack preventing layer 312) Next, a 0.15-pm-thick crack preventing layer 312 made of In 0 o.Ga 0 4 N was grown using TMG, TMI (trimethylindium) and ammonia at 800 0

C.

(n-side cladding layer 313 a super lattice layer) Subsequently, a 25-angstrom-thick first layer made of n-type Al_. Ga 0 4 N doped with Si to 1X 10'/cm 3 was grown using TMA, TMG, ammonia and silane gas at 1050 0 C. Successively, the silane gas and TMA was stopped and a 25-angstrom-thick second layer made of undoped GaN was grown. The first layer and the second layer may be laminated in the order of 1st, 2nd, 1st and so on, to constitute a super lattice layer, resulting in the n-side cladding layer 313 having a super lattice structure and a total thickness of 1.2pm. The n-side cladding layer made in a super lattice 10 structure had an Al average composition of 8.0% and the product thereof multiplied by the thickness was 9.6.

(n-side light waveguide layer 314) Subsequently, the silane gas was stopped and a 0.1m-thick n-side light waveguide layer made of undoped GaN was grown 15 at 1050 0

C.

(active layer 315) Next, the active layer 314 was grown using TMG, TMI and ammonia.

For the active layer, the temperature was maintained at 800 0 C and a 40-angstrom-thick quantum well layer made of undoped Ino.

2 Gao.aN was grown.. Successively, only the ratio of TMI was changed and at the same temperature, a 100-angstrom -thick barrier layer made of undoped Ino.o 0 Ga 0 99 N was grown. The quantum well layer and the barrier layer were laminated alternately so that a barrier layer was the last one, resulting in the active layer having a multi-quantum-well structure and a total thickness of 440 angstroms.

124 (p-side cap layer 316) Next, the temperature was increased to 1050 0 C and a 300-angstrom-thick p-side cap layer 316 made of.p-type Al 0 .jGao.N doped Mg to 1X10 0 /cm 3 and has a larger band gap energy than the p-side light waveguide layer 317 was grown using TMG, TMA, ammonia an Cp2Mg (cyclopentadienyl magnesium).

(p-side light waveguide layer 317) Subsequently, Cp2Mg and TMA were stopped and a 0.1-pm-thick p-side light waveguide layer made of undoped GaN and having a smaller band gap energy than the p-side cap layer 316 was grown at 1050 0

C.

(p-side cladding layer 318) Subsequently, a 2 5 -angstrom-thick third layer made of p-type Ala.

0 gao.

0 4 N doped with Mg to 1X10 2 0 /cm 3 was grown at 1050 0

C.

Successively, only TMG was stopped and a 25-angstrom-thick fourth layer made of undoped GaN was grown, so as to obtain the p-side 0 cladding layer having a super lattice layer with a total thickness of 0.6pm. The p-side cladding layer also had an Al average o* composition of 8% and the product thereof multiplied by the thickness was 4.8.

(p-side cladding layer 319) Subsequently, a 2 5 -angstrom-thick third layer made of p-type Al.

16 Gao.

84 N doped with Mg to IX10 2 0 /cm' was grown at 1050 0

C

and successively, only TMA was stopped and a 25-angstrom- thick fourth layer made of undopedGaN was grown, so as to grow the p-side cladding layer 318 having a super lattice structure with a total 125 thickness of 0.6 pm. The p-side cladding layer had an average Al composition of 8% and the product thereof multiplied by the thickness was 4.8.

(p-side contact layer 319) Finally, a 150-angstrom- thick p-side contact layer 318 made of p-type GaN doped with Mg to 2X10 2 0 /cm' was grown on the p-side cladding layer 318 at 1050 0

C.

The wafer on which the nitride semiconductor was grown in the above-mentioned way was annealed in the nitrogen atmosphere within the reactor to decreased the resistance of the layer doped with a p-type impurity.

After annealing, the wafer was removed out of the reactor and the p-side contact layer 318 which was the top layer and the p-side cladding layer 317 were etched into a ridge having a stripe width of 4 umn, as shown in Fig. 9, with a RIE apparatus.

When the ridge stripe was formed, said ridge was formed at the position where the crystal defects did not develop on the surface of the nitride semiconductor substrate.

o* Next, a mask was formed on the ridge surface and the etching was performed to expose the surface of the n-side buffer layer 311.

Next, the p electrode 320 made of Ni and Au was formed in the form of stripe on the outermost surface of the ridge of the p-side contact layer 319, while the n electrode 322 made of Ti and Al was formed in the form of stripe on the surface of the n-side buffer layer 311 which had been just exposed. Thereafter, 126 as shown in Fig. 9, an insulating film 323 made .of SiO 2 was formed on the surface of the nitride semiconductor layer which were exposed between the p electrode 320 and the n electrode 322. The p pad electrode 321 was formed which was electrically connected to the p electrode 320 via said insulating layer 323.

The sapphire substrate of the wafer on which the n electrode andp electrode were formed in the above-mentioned manner was polished to a thickness of 70., and then the wafer was cleaved into bars perpendicularly to the stripe-geometry electrode from the substrate side to fabricate a facet of a resonator on the cleaving facet. Amulti-layer dielectric film consisting SiO 'and TiO 2 was formed on the facet of the resonator and finally, the bar was cut parallel to the p-electrode, resulting in laser chips.

.The laser device was set onto the heat sink and each electrode was connected by wire-bonding. The laser oscillation was tried at room temperature. The continuous emission was observed at room temperature. The FFP of the single laser was uniform and the shape thereof was an oval, which was a good shape.

Concerning the characteristics of the laser device, the threshold was decreased by not less than 10% and the lifetime was increased by not less than 50%, compared with the laser device which we had published in Jpn. J. Appl. phys. Vol. 36 (1997).

Example 42 With the same procedures as in Example 41 except that the n-side cladding layer 313 had a super lattice layer structure with a total thickness of 1.0 pm which was obtained by laminating a 2 5 -angstrom-thick Si-doped n-type Al 0 20 Gaa.8o and a angstrom-thick undoped GaN, the laser device was fabricated. The n-side cladding layer had an average Al composition of 10.0 and the product thereof multiplied by the thickness was 10.0. The laser device had almost the same characteristics as that in Example 41.

Example 43 With the same procedures as in Example 4"1 except that the n-side cladding layer 313 had a super lattice layer structure with a total thickness of 0.7 pm which was obtained by laminating a 25-angstrom-thick Si-doped n-type Al 0 20 Gao., 0 N and a angstrom-thick undoped GaN, the laser device was fabricated. :The n-side cladding layer had an average Al composition of 1.0 and the product thereof multiplied by the thickness was 7.0. The laser device had almost the same characteristics as that in Example 41.

Example 44 With the same procedures as in Example 41 except that the n-side cladding layer 313 had a super lattice layer structure with a total thickness of 0.8 um which was obtained by laminating a 25-angstrom-thick Si-doped n-type Al 0 .,2Ga 0 88 N and a angstrom-thick undoped GaN, the laser device was fabricated. The n-side cladding layer had an average Al composition of 6.0 and the product thereof multiplied by the thickness was 4.8. The threshold of said laser device was decreased by not less than and the lifetime was increased by not less than 20%, compared with the laser device which we had published in Jpn. J. Appl. phys.

Vol. 36 (1997).

128 Example With the same procedures as in Example 41 except that the n-side cladding layer 313 had a super lattice layer structure with a total thickness of 1.4 um which was obtained by laminating a 25-angstrom-thick Si-doped n-type Alo.

0 7 Gao.93N and a angstrom-thick undoped GaN, the laser device was fabricated. The n-side cladding layer had an average Al composition of 3.5 and the product thereof multiplied by the thickness was 4.9. The laser device had almost the same characteristics as that in Example 41.

Industrial Applicability As mentioned above, the nitride semiconductor devices according to the present invention are composed of superlattice .layers in the domain of the p-type nitride semiconductor or n-type nitride semiconductor except for the active layer, to improve the electric power efficiency extremely.

""That.is, in the conventional nitride semiconductor devices, the active layer having a multi-quantum-well-structure has been proposed. However, the layer such as the cladding layer, which was on the either side of the active layer, has been usually composed of a single nitride semiconductor layer. In the nitride semiconductor devices according to the present invention, the cladding layer or the contact layer injecting electric current is composed of superlattice layer which shows quantum effect to reduce the resistivity of the cladding layer side. Therefore, the threshold electric current and the threshold voltage of LD devices 129 can be low and the lifetime thereof can be long. Moreover, the conventional LED has been weak to the static electricity, but the devices according to the present invention can have a good electrical static discharge survivability. Thus, since Vf and the threshold voltage can be low, the calorific value can be small and the reliability of the devices can be enhanced. The nitride semiconductor devices according to the present invention can be applied to emitting devices such as LED and LD, as well as solar cells using nitride semiconductors, light sensors, transistors and so on, to realize devices with very high efficiency and the industrial applicability is very wide.

It will also be understood that the term "comprises" (or its grammatical variants) as used in this specification is equivalent to the term "includes" and should not be taken as excluding the presence of other elements or features.

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Claims (25)

1. 6. A nitride semiconductor device according to Claim 20 4 or wherein the concentration of the n-type impurity in said first nitride semiconductor layer ranges between 1 x 101/cm 3 and 1 x 10 20 /cm 3 and the concentration of the n-type impurity in said second nitride semiconductor layer is not more than 1 x 101'/cm 3 r:. oeo 133 7, A nitride semiconductor device according to Claim 1 or wherein for said n-side super lattice layer, said first nitride semiconductor layer has a higher band gap energy and a smaller concentration of the n-type impurity than said second nitride semiconductor layer.
2. 8- A nitride semiconductor device according to Claim 7 wherein the part of said second nitride semiconductor layer which is close to said first nitride semiconductor 10 layer has a lower concentration of the n-type impurity than 0 o.. the part which is farther from the first nitride semiconductor layer.
3. 9. A nitride semiconductor device according to Claims 7 or wherein the concentration of the n-type impurity *0 in said first nitride semiconductor layer is not more than 1 x 10"/cm 3 and the concentration of the n-type impurity in said second nitride semiconductor layer ranges between 1 x 3 and 1 x 10 2 /cm 3 A nitride semiconductor device according to any one of Claim 4 to Claim wherein said first nitride semiconductor layers are made of AlyGa _yN and said second nitride semiconductor layers are made of InxGa,-_N (0 X<1). 134
4. 11. A nitride semiconductor device according to Claim wherein said second nitride semiconductor layers are made of GaN.
5. 12. A nitride semiconductor device according to any one of Claim 24 to Claim wherein said first nitride semiconductor layers are made of AlxGa_-N and said second nitride semiconductor layers are made of AlyGa 1 _yN 10 X>Y). S. 13. A nitride semiconductor device according to/ any one of Claim 4 to Claim 12, wherein said first nitride semiconductor layer or said second nitride semiconductor layer is not doped with an n-type impurity.
6. 14- A nitride semiconductor device according to Claims 2 or 3, wherein for said p-side super lattice layer, said third nitride semiconductor layer has a higher band gap energy and a larger concentration of the p-type impurity than said fourth nitride semiconductor layer. A nitride semiconductor device according to Claim 14, wherein the part of said third nitride semiconductor layer which is close to said fourth nitride semiconductor 135 layer has a lower concentration of the p-type impurity than the part which is farther from the fourth nitride semiconductor layer.
7. 16. A nitride semiconductor device according to Claim 11 or 12 wherein the concentration of the p-type impurity in said third nitride semiconductor layer.ranges between 1 x 10"1/cm 3 and 1 x 10 2 /cm 3 and the concentration of the p-type impurity in said fourth nitride semiconductor layer is not 10 more than 1 x 10 2 /cm. :17. A nitride semiconductor device according to Claim 2 or 3, wherein for said p-side super lattice layer, said third nitride semiconductor layer has a higher band gap energy and a smaller concentration of the p-type impurity .o than said fourth nitride semiconductor layer.
8. 18. A nitride semiconductor device according to Claim 17, wherein the part of said fourth nitride semiconductor layer which is close to third nitride semiconductor layer has a lower concentration of the p-type impurity than the part which is farther from the third nitride semiconductor layer. 2S 19. A nitride semiconductor device according to Claim 136 17 or 18, wherein the concentration of the p-type impurity in said third nitride semiconductor layer is not more than 1 x 10 2 /cm 3 and the concentration of the p-type impurity in said fourth nitride semiconductor layer ranges between 1 x 10"/cm 3 and 1 x 10 2 /cm 3 A nitride semiconductor device according to any one of Claim 14 to Claim 19, wherein said third nitride semiconductor layers are made of AlyGa-N and said 10 fourth nitride semiconductor layers are made of InxGa 1 -xN (0 X<1)
9. 21. A nitride semiconductor device according to Claim 20 wherein said fourth nitride semiconductor layers are made 15 of GaN.
10. 22. A nitride semiconductor device according to any one of Claim 14 to Claim 19, wherein said third nitride semiconductor layers are made of AlGa_xN and said fourth nitride semiconductor layers are made of AlyGa-_yN X>Y).
11. 23. A nitride semiconductor device according to any one of Claim :14 to Claim 22 wherein said third nitride semiconductor layer or said fourth nitride semiconductor 137 layer is not doped with an n-type impurity.
12. 24. A nitride semiconductor device according to Claim 3 wherein for said n-side super lattice layer, said first nitride semiconductor layer has a higher band gap energy and a larger concentration of the n-type impurity than said second nitride semiconductor layer, and for said p-side super lattice layer, said third nitride semiconductor layer has a higher band gap energy and 10 a larger concentration of the p-type impurity than said f fourth nitride semiconductor layer. A nitride semiconductor device according to Claim wherein the concentration of the n-type impurity in said first nitride semiconductor layer ranges between 1 x 10"/cm 3 And 1 x 10 2 /cm 3 and the concentration of the n-type impurity in said second nitride semiconductor layer is not more than 1 x 10 1 /cm 3 and the concentration of the p-type impurity in said third nitride semiconductor layer ranges between 1 x 10' 8 /cm 3 and 1 x 10 21 /cm 3 and the concentration of the p-type impurity in said fourth nitride semiconductor layer is not more than 1 x 10 2 /cm3.
13. 26. A nitride semiconductor device according to Claim wherein for said n-side super lattice layer, said first nitride semiconductor layer has a higher band gap energy and a larger concentration of the n-type impurity than said second nitride semiconductor layer, and fourthe p-side super lattice layer, said third nitride semiconductor layer has a higher band gap energy and a smaller concentration of the p-type impurity than said fourth nitride semiconductor layer. S.. S S. S S. 10 27.- A nitride semiconductor device according to Claim 26 wherein the concentration of the n-type impurity in said first nitride semiconductor layer ranges between 1 x 10 17 /cm 3 and 1 x 10 20 /cm 3 and the concentration of the n-type impurity in said second nitride semiconductor layer is not more than 1 x 101/cm 3 and i the concentration of the p-type impurity in said third nitride semiconductor layer is not more than 1 x 20 /cm 3 and the concentration of the p-type impurity in said fourth nitride semiconductor layer ranges between 1 x 10' 8 /cm 3 and 1 x 10 2 /cm 3
14. 28. A nitride semiconductor device according to Claim 3 wherein for said n-side super lattice layer, said first nitride semiconductor layer has a higher band gap energy and a smaller concentration of the n-type impurity than said 139 second nitride semiconductor layer, and for said p-side super lattice layer, said third nitride semiconductor layer has a higher band gap energy and a larger concentration of the p-type impurity than said fourth nitride semiconductor layer.
15. 29. A nitride semiconductor device according to Claim 28 wherein the concentration of the n-type impurity in said first nitride semiconductor layer is not more than 1 x 10 10 19 /cm 3 and the concentration of the n-type impurity in said second nitride semiconductor layer ranges between 1 x 10L 7 /cm 3 and 1 x- 10 2 /cm 3 and the concentration of the p-type impurity in said third nitride semiconductor layer ranges between 1 x 101/cm 3 and 1 x 10 2 /cm 3 and the concentration of'the p-type impurity in said fourth nitride semiconductor layer is not more than 1 x 10 2 /cm 3 0 A nitride semiconductor device according to.Claim 3, wherein for said n-side super lattice layer, said first nitride semiconductor layer has a higher band gap energy and a smaller concentration of the n-type impurity than said second nitride semiconductor layer, and for said p-side super lattice layer, said third nitride semiconductor layer has a higher band gap energy and 140 a smaller concentration of the p-type impurity than said fourth nitride semiconductor layer.
16. 31. A nitride semiconductor device according to Claim 30, wherein the concentration of the n-type impurity in said first nitride semiconductor layer is not more than 1 x 1 9 /cm 3 and the concentration of the n-type impurity in said second nitride semiconductor layer ranges between 1 x 10' 7 /cm 3 and 1 x 10 20 /cm 3 and 0 the concentration of the p-type impurity in said third nitride semiconductor layer is not more than 1 .x 110 0 /cm' and the concentration of the p-type impurity in said fourth nitride semiconductor layer ranges between 1 x 10 1 /cm 3 1 x 10 2 /cm 3
17. 32. A nitride semiconductor device according to any one of Claim 25 to Claim 3 1 wherein for said n-side super lattice layer, said first nitride semiconductor layers are made of AlyGalyN and said second nitride semiconductor layers are made of InxGaxN and for said p-side super lattice layer, said third nitride semiconductor layers are made of AlyGa 1 yN and said fourth nitride semiconductor layers are made of In.Ga _,N (0 X<1). 141
18. 33. A nitride semiconductor device according to any one of Claim 24 to Claim 31, wherein said second and fourth nitride semiconductor layers are made of GaN, respectively.
19. 34. A nitride semiconductor device according to any one of Claim 24 to Claim 31, wherein for said n-side super lattice layer, said first nitride semiconductor layer is made of AlxGalxN and said second nitride semiconductor layer is made of AlyGal_,N X>Y), 10 for said p-side super lattice layer, said third nitride semiconductor layer is made of AlxGa 1 _N and said fourth nitride semiconductor layer is made of AlyGazyN X>Y). 15 35. A nitride semiconductor device according to any one of Claim 24 to Claim 34 wherein said first nitride semiconductor layer or said second nitride semiconductor layer is an undoped layer to which an n-type impurity is not doped.
20. 36. A nitride semiconductor device according to any one of Claim 24 to Claim 34 wherein said third nitride semiconductor layer or said fourth nitride semiconductor layer is an undoped layer which is not doped with a p-type impurity. .1 142
21. 37. A nitride semiconductor device according to any one of Claim 1 to Claim 37 wherein said active layer includes a InGaN layer.
22. 38. A nitride semiconductor device according to Claim 37, wherein said InGaN layer is a quantum well layer.
23. 39. A nitride semiconductor device according to any S 10 one of Claim 1 to Claim38 wherein said device is a laser device comprising an active layer between a p-type cladding layer and an n-type cladding layer, and at least one of said p-type cladding layer and said n- type cladding layer is said n-side super lattice layer or 15 said p-side super lattice layer. A nitride semiconductor device according to Claim 39 wherein said device is a laser device, and an optical waveguide layer made of a nitride semiconductor containing In or GaN which has an impurity concentration of not more than 1 x 10"/cm 3 which is formed at least either between said n-type cladding layer and said active layer or between said p-type cladding layer and said active layer. I 143
24. 41. A nitride semiconductor device according to Claim wherein said optical waveguide layer has a super lattice structure. 42, A nitride semiconductor device according to Claim or 41 wherein further, a cap layer made of a nitride semiconductor which has a higher band gap energy than said well layer of said active layer and said optical waveguide layer and has a thickness of not more than 0.1 urn is 10 formed between said optical waveguide layer and said active layer, said cap layer containing an impurity of not less than 1 x 1019/cm 3 43, A nitride semiconductor device according to Claim 15 42 wherein said optical waveguide layer and said cap layer are formed in the p-type semiconductor region.
25. 44. A nitride semiconductor device comprising a nitride semiconductor substrate which is formed by growing a nitride semiconductor layer on an auxiliary substrate made of a material other than nitride semiconductor, forming a protective film on said grown nitride semiconductor layer so as to expose partially the surface thereof, thereafter growing a nitride semiconductor layer to cover said protective film from the exposed nitride semiconductor layer, 004302740 144 and a nitride semiconductor device according to any one of Claim 23 to Claim 65 which is formed on said nitride semiconductor substrate. A nitride semiconductor device according to any one of Claim 39 to 44 wherein said p-type cladding layer is a super lattice layer and a ridge is formed on said p-type cladding layer and on the layer located over said p-type cladding layer in a manner that the longitudinal direction of the ridge coincides with the direction of resonance and the ridge has a predetermined width. woo. C.. 0 060, -000 CC C 00 C CC.. CCC. Cc *C CC,. Nichia Chemical Industries Ltd By its Registered Patent Attorneys Freehills Carter Smith Beadle 6 June 2003