AU747912B2 - A method for the formation of an indium oxide film - Google Patents

Description

S&F Ref: 439628D1

AUSTRALIA

PATENTS ACT 1990 COMPLETE SPECIFICATION FOR A STANDARD PATENT

ORIGINAL

Name and Address of Applicant: Actual Inventor(s): Address for Service: Canon Kabushiki Kaisha 30-2, Shimomaruko 3-chome, Ohta-ku Tokyo 146 Japan Kozo Arao, Katsumi Nakagawa and Yukiko Iwasaki Spruson Ferguson St Martins Tower 31 Market Street Sydney NSW 2000 A Method for the Formation of an Indium Oxide Film s s Invention Title: The following statement is a full description of this invention, including the best method of performing it known to me/us:- 5845c A Method for the Formation of an Indium Oxide Film Background of the Invention 1. Field of the Invention The present invention relates to a method for forming an indium oxide film by way of electro deposition process, and a method for forming an indium oxide film by way of electroless deposition process. The present invention also relates to a plating solution for use in the formation of an indium oxide film by way of electroless deposition process. The present invention further relates to a substrate provided with said indium oxide film for a semiconductor element, and a semiconductor element provided with said substrate. The semiconductor element includes a photovoltaic element (including a photoelectric conversion element), a self luminescent type element, a liquid crystal element, and the like.

2. Related Background Art Indium oxide is excellently transparent and has IN:\LIBC1OOOO9:MEF an excellent electrically conductive property as well as tin oxide and zinc oxide. In this respect, indium oxide has been often used for industrial purposes. Particularly, it has been used in the production of semiconductor elements Shaving a portion to which light is impinged and a voltage is impressed upon use. Besides, it has been also used as an antistatic coating material which can be applied to a transparent glass member or the like. In addition, indium oxide is superior to tin oxide with respect to the electric Ic conductivity and it is superior to zinc oxide with respect to the stability to environments, specifically, for instance, the resistance to chemicals. In this connection, indium oxide has more opportunities to be used in comparison with tin oxide and zinc oxide. Particularly, in the case of an indium oxide incorporated with several percentages to some tens percentages of tin such as ITO (In 2 0 3 -SnO2), it is excellently transparent and has an extremely small electric resistance. Therefore, it has been widely used as a transparent and electrically conductive film in various semiconductor elements.

As for the method for the formation of an indium oxide film, there are known vacuum deposition film-forming i methods such as chemical vapor deposition (CVD) method, evaporation method, sputtering method, and MBE method.

Besides, a wet-type film forming method by so-called 2

I

sol-gel processing is also known. Of these, the sputtering film-forming method has been preferably used, because this film-forming method is advantageous in that an uniform indium oxide film can be easily formed at a relatively low temperature. For the sputtering filmforming method, there is known a reactive sputtering film-forming method in which a target comprising an indium metal is sputtered in an atmosphere composed of 02 gas. This reactive sputtering film-forming method enables to form ico an indium oxide film at a high speed.

However, any of these vacuum deposition filmforming methods has such disadvantages as will be described in the following. A specific film-forming apparatus provided with a vacuum vessel and a exhaust device is necessary to be used, and in the case where the filmforming apparatus is large-sized, the film-forming apparatus unavoidably becomes costly, resulting in a raise in the production cost of an indium oxide film obtained. In addition, in the case of forming a large area indium D(C oxide film uniformly on a large area substrate, a gas introduction means including a control system for a gas introduced, a means for controlling the temperature of the substrate, a power supply equipment and the like are necessary to be specifically designed to conform the large area substrate, wherein the film-forming apparatus becomes r 3 more costly. Further, a certain period of time is unavoidably consumed for evacuating the inside of the film forming space and also for raising or lowering the substrate temperature. And in the case of producing a semiconductor Selement, there are various restrictions in the process for the production thereof.

For the film-forming method by sol-gel processing, there are problems such that a temperature of several hundreds centigrade is required for sintering, and a number \o of pores are liable to generate in an indium oxide film obtained. In addition, it is difficult to mass-produce a uniform indium oxide film product having a sufficiently low electric resistance.

Under this circumstance, in view of providing 1' particularly an optical semiconductor element such as a photovoltaic element (or a photoelectric conversion element) at a reasonable production cost, there is a demand for realizing an appropriate film-forming method which enables to effectively form a large area transparent and P0 electrically conductive indium oxide film having a uniform thickness and a uniform property on a large area substrate at a high speed and at a low substrate temperature without using such large-sized apparatus including evacuating and heating apparatus as in the case of the vacuum deposition aS film forming method.

4 Summary of the Invention A principal object of the present invention is to provide a method which enables to effectively form a high quality indium oxide film by way of electro deposition process or electroless deposition process, which meets the foregoing demand and which can be employed in the production of various semiconductor elements.

Another object of the present invention is to provide a method for forming an indium oxide film, comprising the io steps of: immersing an electrically conductive substrate as an electrode and a counter electrode in an aqueous solution containing at least nitrate ion and indium ion and applying an electric current to said substrate to energize between said substrate and said counter electrode, ig whereby causing the formation of said indium oxide film on the substrate.

A further object of the present invention is to provide a substrate for a semiconductor element, comprising an electrically conductive substrate as a substrate for a semiconductor element having an indium oxide film formed thereon by immersing said elect rically conductive substrate as an electrode and a counter electrode in an aqueous solution containing at least nitrate ion and indium ion and applying an electric current to said substrate to 5 energize between said substrate and said counter electrode.

5 6 A further object of the present invention is to provide a photovoltaic element comprising at least a first transparent and electrically conductive layer, a semiconductor layer and a second transparent and electrically conductive layer stacked in this order on an electrically conductive substrate, wherein at least one of the first and second transparent and electrically conductive layers comprises an indium oxide film formed by immersing said electrically conductive substrate as an electrode and a counter electrode in an aqueous solution containing at least nitrate ion and indium ion and applying an electric current to said substrate to energize between said substrate and said counter electrode.

A further object of the present invention is to provide an aqueous solution for the formation of an indium oxide film by electroless deposition, said aqueous solution containing at least nitrate ion at a concentration of 0.001 to 0.5 mol/1, indium ion at a concentration of 0.001 to 0.5 mol/1, and tartrate at a concentration of 0.00001 to 0.1 mol/1.

A further object of the present invention is to provide an electroless deposition filmforming method for forming an indium oxide film, comprising the steps of: immersing a I is substrate in an aqueous solution containing at least nitrate ion, indium ion and tartrate and maintaining said substrate at a temperature of 10 to 60 thereby depositing said indium oxide film on said substrate.

A further object of the present invention is to [R:\LIBXX]03245.doc:aak provide a photovoltaic element comprising at least a first transparent and electrically conductive layer, a semiconductor layer and a second transparent and electrically conductive layer stacked in this order on a substrate, wherein at least one of the first and second transparent and electrically conductive layers comprises an indium oxide film formed by immersing said substrate in an aqueous solution containing at least nitrate ion, indium ion and tartrate and maintaining said substrate at a io temperature of 10 to 60 00 to deposit said indium oxide film on said substrate.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram illustrating the constitution of an example of a film-forming apparatus for 1' forming an indium oxide film by way of electro deposition process in the present invention.

FIG. 2 is a X-ray diffraction pattern for an indium oxide film formed in the present invention.

FIG. 3 is a schematic cross-sectional view "0 illustrating the configuration of an example of a photovoltaic element (a solar cell) in which the present invention can be employed.

eoooo S"DESCRIPTION OF THE INVENTION AND PREFERRED T EMBODIMENTS as The present inventors conducted studies through 7 experiments in order to satisfy the foregoing demand.

As a result, there were obtained such findings as will be described in the following experiments.

Particularly, there was obtained a finding that the use of a specific aqueous solution containing at least nitrate ion and indium ion enables to form a desirable, large area indium oxide film having a uniform thickness and a uniform property on a large area substrate at a high speed (or a high deposition rate) and at a low substrate temperature ic' without necessity of using a large scale apparatus. The present invention has been accomplished on the basis of this finding.

oo go ooo ooooo eeeoo ooe o ooooo Description will be made of the experiments conducted by the present inventors.

1 In the following experiments, there was used a film-forming apparatus shown in FIG. i, in which a circulation system for an aqueous solution is omitted for simplification purposes.

In FIG. i, reference numeral 101 indicates a Do reaction vessel, reference numeral 102 an electrolytic aqueous solution, reference numeral 103 an negative electrode comprising an electrically conductive substrate, reference numeral 104 a counter electrode as a positive electrode, reference numeral 105 a power source, reference Zi numeral 106 a load resistor, reference numeral 107 an inlet o.

oe e oo 8 pipe, reference numeral 108 an exhaust pipe, reference numeral 109 a conduit for exhaustion, reference numeral 110 a conduit for inlet, and reference numeral 111ii a solution circulating pump.

As the negative electrode 103, there was used a 0.12 mm thick stainless steel plate 430BA whose rear face being covered with an insulating tape. As the positive electrode 104, there was used a 0.2 mm thick platinum plate having a purity of 4N. As the electrolytic aqueous solution 102, there Co was used an aqueous solution of indium nitrate. In order to prevent occurrence of abnormal film growth, the aqueous solution was added with sucrose (disaccharide) or dextrin (polysaccharide). Instead of the solution circulation system which was omitted, the electrolytic aqueous solution 11 102 was always stirred by means of a magnetic agitator.

Experiment 1 This experiment was conducted using the filmforming apparatus shown in FIG. 1.

As the electrolytic solution 102, there was used S ~2-O an aqueous solution containing 0.007 mol/l of indium nitrate. The temperature of the electrolytic solution was maintained at 25 C. Under this condition, film formation "was conducted by applying an electric current **density between the negative electrode 103 and the positive electrode 104 for 10 minutes. This procedure was 9 repeated several times, except for changing the density of the electric current flown between the two electrodes to 0.6 mA/cm 2 0.9 mA/cm 2 2.1 mA/cm 2 or 3.7 mA/cm 2 in each run. The negative electrode's surface exposed Sto the electrolytic solution after the film formation in each run was examined. As a result, for the run where the density of the electric current was 0.6 mA/cm 2 there was observed no change on the negative electrode's surface. For the run where the density of the electric current was 0.9 k<D mA/cm 2 there were observed interference colors only at a periphery of the negative electrode's surface. For the run where the density of the electric current was 2.1 mA/cm 2 there were observed a transparent film exhibiting interference colors deposited at a central portion of the negative electrode's surface and an opaque cloudy film deposited at a periphery of the negative electrode's surface.

For the run where the density of the electric current was ooooo 3.7 mA/cm 2 there was observed a white opaque film deposited on the negative electrode's surface to cover the "7C" entire surface and which slightly exhibits interference colors.

Experiment 2 S"This experiment was conducted in the same manner as in Experiment i, except for changing the electrolytic solution used in Experiment 1 to an electrolytic solution 10 obtained by adding 6 g/l of sucrose to an aqueous solution containing 0.007 mol/l of indium nitrate.

Particularly, under condition of maintaining the temperature of the electrolytic solution, film formation was conducted by applying an electric current density of 2.4 mA/cm 2 between the negative electrode 103 and the positive electrode 104 for 10 minutes.

Thereafter, the negative electrode's surface exposed to the electrolytic solution after the film formation was C> examined. As a result, there was observed the deposition of a transparent film exhibiting more interference colors that those in the case of 2.1 mA/cm 2 for the electric current density in Experiment 1 where no sucrose was used in the electrolytic solution.

i 5 Based on this fact, there was obtained a finding that sucrose contributes to uniform film deposition.

oooo In addition, the film-formingspeed (the deposition rate) in this experiment was found to be about 5 A/sec.

Experiment 3 This experiment was conducted in the same manner as in Experiment i, except for changing the electrolytic solution used in Experiment 1 to an electrolytic solution ooo.o.

Sobtained by adding 0.02 g/l of dextrin to an aqueous solution containing 0.007 mol/l of indium nitrate.

P:articularly, under the condition of constant 11 r temperature of the electrolytic solution, film formation was conducted by applying an electric current density of 2.4 mA/cm 2 between the negative electrode 103 and the positive electrode 104 for 10 minutes.

SThereafter, the negative electrode's surface exposed to the electrolytic solution after the film formation was examined. As a result, there was observed the deposition of a transparent film exhibiting more interference colors than those in the case of 2.1 mA/cm 2 for the electric io current density in Experiment 1 where no sucrose was used in the electrolytic solution, as well as in the case of Experiment 2.

Based on this fact, there was obtained a finding that dextrin also contributes to uniform film deposition.

Experiment 4 The film-forming procedure of Experiment 2 was repeated three times, except that the temperature of the ooooo electrolytic solution was changed to 50 C, 60 C, or 70 °C in each run.

.2 0c The negative electrode's surface exposed to the electrolytic solution after the film formation in each ooocase was examined. As a result, there were obtained the following findings. In each of the two runs where the temperature of the electrolytic solution was 50 C and that S 5 was 60 a transparent deposited film exhibiting 12 interference colors was formed on the entire negative electrode's surface. On the other hand, in the run where the temperature of the electrolytic solution was 70 the electrolytic solution became opaque and precipitation Swas formed on the negative electrode's surface. This precipitation was examined using a scanning electron microscope (SEM). As a result, the precipitation was found to contain a number of oval grains of about 1 pm in size.

It is considered that these particles would have been grown in the liquid phase.

For the opaqueness of the electrolytic solution, it was found to faintly start from 60 Thus, it was found that 60 -C for the electrolytic solution is the upper limit.

Separately, the deposited film at 60 C for the temperature of the electrolytic solution was subjected to X-ray diffraction to obtain a diffraction pattern shown in FIG. 2 having a strong specific diffraction peak near .20° corresponding to indium oxide.

Experiment •D O The film-forming procedures of the case of maintaining the electrolytic solution at 50 in Experiment 4 were repeated, except for using a 0.2 mm thick indium plate having a purity of 4N as the counter electrode.

The results were similar to those obtained in 5 Experiment 4 except for the following points. That is, the 13 r electrolytic solution became slightly hazy even at 50 C, and a white opaque film was lightly deposited at a periphery of the negative electrode's surface.

On the basis of the results obtained, there were Sobtained the following findings. That is, in the case of using such indium plate as the counter electrode, although the indium plate has an advantage of supplying indium in the electrolytic solution, there is a disadvantages in that it is softened as the temperature of the KD surrounding atmosphere is increased and therefore an intense care is necessary to have in handling the indium plate as the counter electrode.

The present invention has been accomplished on the basis of the findings obtained through the experiments.

As previously described, the present invention provides a film-forming method which enables to form a desirable large area indium oxide film having a uniform thickness and a uniform property on a large area substrate at a high speed (a high deposition rate) and at a low cO substrate temperature without necessity of using a large scale apparatus.

A typical embodiment of the film-forming method for forming an indium oxide film, comprises the steps of: immersing an electrically conductive substrate as an electrode and a counter electrode in an aqueous 14 electrolytic solution containing at least nitrate ion and indium ion and applying an electric current between said substrate and said counter electrode, whereby causing the formation of said indium oxide film on the substrate.

C3For the electric current applied to the electrically conductive substrate upon the film formation, it is desired to be in the range of 0.1 mA/cm 2 to 100 mA/cm 2 in terms of the current density.

For the temperature of the aqueous electrolytic icD solution upon the film formation, it is desired to be in the range of 20 to 60 °C.

The counter electrode is desired to comprise an electrode which is insoluble in the aqueous electrolytic solution.

1 The aqueous electrolytic solution may contain a hydrocarbon. The hydrocarbon material can include saccharides.

,oeo For the nitrate ion contained in the aqueous solution as the electrolytic solution, it may be supplied ?Zoo in the form of a nitric acid or in the form of a nitrate. .o Alternatively, it may be based on a mixture of said nitric •acid and nitrate.

In the case where the nitrate ion is based on a nitric acid, when its concentration is beyond 0.1 mol/l which 5 exceeds the concentration of base counter ions, 15 substantially no film deposition is occurred. On the other hand, when the concentration is less than 0.01 mol/l, there is provided an effect of delaying the aqueous solution from being hazy when the aqueous solution is maintained at about 50 °C.

In the case where the nitrate ion is based on a nitrate, the nitrate can include indium nitrate, magnesium nitrate, aluminum nitrate, sodium nitrate, potassium nitrate, and the like. In the case of using the indium nitrate, it supplies \o both the nitrate ion and indium ion in the aqueous solution.

For the indium ion contained in the aqueous solution as the electrolytic solution, it may be supplied in the form of, for example, indium nitrate, indium chloride, indium sulfate, or indium hydroxide. Alternatively, it is possible \5 to introduce indium ion into the aqueous solution using a solution comprising an indium metal or a tin-indium alloy dissolved in a nitric acid. In the case of using the tin-indium alloy, since the tin is precipitated as a tin oxide, there is provided a solution containing indium LO ion as a main content. For instance, there can be used a solution obtained by dissolving a 50% tin-50 indium alloy in a 0.1 mol/l nitric acid solution at room temperature, followed by diluting to 1/10 with pure water.

As above described, the temperature of the aqueous L solution as the electrolytic solution upon the film

S

0S9*

S

S

55S 8 .5 *S S 16 formation is desired to be in the range of 20 to 60 C. It is possible for the aqueous solution to be varied in this range during the film formation. In order to prevent occurrence of an abnormal film growth, it is preferable to Smaintain the aqueous solution at a higher temperature in the above range, where film deposition is stably occurred.

As the counter electrode as the positive electrode, an electrode made of indium may be used in order to prevent the counter electrode from suffering from a ICo mechanical force and also in order to prevent the counter electrode from suffering from a raise in the temperature.

Further, in order to stably conduct the film formation, it is desired to use a counter electrode made of a material insoluble in the aqueous electrolytic I5 solution. Such material can include platinum, carbon, and the like. When the counter electrode comprising carbon is 0000

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used, the electrode may comprise a titanium plate coated •by a carbon powder.

Specific examples of the foregoing saccharides as o LO. the carbohydrate contained in the aqueous electrolytic solution are sucrose, dextrin, glucose, maltose, fructose, galactose, lactose, glycogen, and inulin.

As above described, the electric current applied to 0. the electrically conductive substrate upon the film Sformation is desired to be in the range of 0.1 A/cm to 100 ooo.. 5 formation is desired to be in the range of 0.1 mA/cm 2 to 100 17 mA/cm 2 in terms of the current density. In order to attain the formation of a deposited film with certainty, it is desired for the current density to be 0.7 mA/cm 2 or more.

The upper limit in this case should be determined depending Supon the situation of hydrogen generated from the aqueous electrolytic solution oooooooooooooto hinder the film formation. However, in general, it is 20 mA/cm 2 or less.

The electrically conductive substrate used as the negative electrode is for forming an indium oxide film %o thereon. For the electrically conductive substrate, there is no particular restriction as long as it is electrically conductive and stable to the aqueous electrolytic solution. Specific examples are metal members made of a metal such as Fe, Cu, or Al, or an alloy such as stainless t steel or brass; electrically conductive metallic members coated by a metal such as Au, Ag, Cu, or Al; non-electrically conductive members made of a glass, ceramic, or synthetic ooooo resin, coated with a metal such as Au, Ag, Cu, or Al.

Alternatively, the electrically conductive -OC substrate may comprise a semiconductor member as long as it allows surface reaction with the electric current applied as above described. Such semiconductor member can include a crystalline silicon member, an amorphous silicon member, a microcrystalline silicon member, and these members doped i with a p-type or n-type dopant; group III-V semiconductor 18 members such as a GaAs member, an InP member, and the like; group II-VI semiconductor members such as a CdS member, a CdSe member, and the like. Besides, it is possible to use a tin oxide member or a zinc oxide member. Further, it is Salso possible to use an indium oxide member or an ITO member, formed by a sputtering process, and having a different morphology.

The electro deposition film-forming method for the formation of an indium oxide film according to the ico present invention may be effectively employed in the production of a photovoltaic element including a solar cell.

A typical embodiment of a photovoltaic element in which the present invention is applied comprises at least a first transparent and electrically conductive layer, a :i semiconductor layer and a second transparent and electrically conductive layer stacked in this order on an :oooi electrically conductive substrate, wherein at least one of the first and second transparent and electrically 'o conductive layers comprises an indium oxide film formed by immersing said electrically conductive substrate as an electrode and a counter electrode in an aqueous solution ooooo containing at least nitrate ion and indium ion and applying an electric current between said substrate and said O• counter electrode.

19- FIG. 3 is a schematic cross-sectional view illustrating an example of such photovoltaic element (used as a solar cell) The photovoltaic element (the solar cell) shown in FIG. 3 comprises an optically reflecting layer 302 (or a back reflecting layer), a first transparent and electrically conductive layer 303, a semiconductor active layer 304, a second transparent and electrically conductive layer 308, and a collecting electrode 309 disposed in this order on \o an electrically conductive substrate 301, wherein a power output terminal (not shown) is electrically connected to the collecting electrode 309, and another power output terminal (not shown) is electrically connected to the electrically conductive substrate 301.

5 The semiconductor active layer 303 in the photovoltaic element (the solar cell) shown in FIG. 3 has a single cell structure having a pin junction, comprising an n-type semiconductor layer 305, an i-type semiconductor layer 306 and a p-type semiconductor layer being stacked in o this order from the substrate side. But this is not imperative. The semiconductor active layer 303 may be a stacked structure comprising a plurality of pin junction cells. Alternatively, it may be a stacked structure having an np junction or a hottky type junction. This situation will be detailed later.

20 In the following, description will be made of each constituent of the photovoltaic element (the solar cell) shown in FIG. 3.

Electrically Conductive Substrate The electrically conductive substrate 301 serves not only as a substrate having a physical strength to support a photovoltaic element disposed thereon while having an electrical connection with the element.

For the electrically conductive substrate 301, there is no particular restriction as long as it has an electrically conductive surface. Specifically, it may be an electrically conductive member composed of a metal such as Al, Cu, Fe, Al, Ni, or the like, or an electrically conductive member composed of an alloy of these metals such as stainless steel, brass, or the like. Besides, metal members coated with an electrically conductive metallic so** material such as a Ni-plated steel member may be also usable. usable.

a The electrically conductive substrate 301 may be a film or sheet made of a synthetic resin or a sheet made of a glass or ceramic, deposited with an electrically conductive film on at least a surface thereof so as to have an electrical connection with the element disposed thereon.

The electrically conductive substrate 301 may be shaped in an appropriate form as long as a given layer of 21 the photovoltaic element can be properly formed thereon.

Particularly, when the semiconductor active layer is composed of an amorphous silicon material, the electrically conductive substrate may be shaped in an appropriate form such as a sheet-like form, a plate-like form, or a roll form.

Besides, it may be shaped in a roof tile-like form or an external wall form which is usable to a building.

Optically Reflecting Layer The optically reflecting layer 302 (hereinafter c referred to as "reflecting layer") disposed on the electrically conductive substrate 301 serves to reflect light passed through the semiconductor active layer 304 back into the semiconductor active layer so that the light is efficiently utilized by being absorbed by the 15 semiconductor material of the semiconductor active layer :i to improve the photoelectric conversion efficiency of the photovoltaic element (the solar cell). Particularly, the reflecting layer comprises a layer having a sufficient reflectivity against light in a region where the 2Z semiconductor material of the semiconductor active layer exhibits translucency. The light in such region of S exhibiting translucency may be 600 nm to 1100 nm when the semiconductor material of the active layer comprises an amorphous silicon material.

IThe back reflecting layer may comprise a single- 22 layered structure or a two-layered structure comprising a metal selected from the group consisting of Ag, Cu, Al, and the like.

The reflecting layer 302 is desired to have a roughened surface in order to make incident light to be effectively utilized. This situation will be later described in more detail The reflecting layer may be omitted when the electrically conductive substrate 301 is composed of Cu Qo which exhibits a sufficient reflectivity.

The reflecting layer may be properly formed by a conventional film-forming technique such as resistant heating evaporation, electron beam evaporation or sputtering.

First Transparent and Electrically Conductive Layer The first transparent and electrically conductive *O*o layer 303 is required to be transparent against the light of the translucent region of the foregoing semiconductor material and to exhibits conductivity to an o O electric current outputted from the semiconductor junction eeo* of the semiconductor active layer 304. The conductivity •herein depends upon the thickness of the first transparent and electrically conductive layer, but it is necessary to be less than the internal electric resistance of the a semiconductor junction of the semiconductor active layer.

23 For instance, when the first transparent and electrically conductive layer 303 of a thickness of l1 m, the conductivity thereof is desired to be about 105 Qcm or less.

A combination of the optically reflecting layer 302 and the first transparent and electrically conductive layer 303 establishes a back reflector. The back reflector serves not only to reflect the light in the region where the semiconductor material of the semiconductor active layer exhibits translucency back into the semiconductor active IC layer so that the light is further absorbed by the semiconductor material but also to prolong a optical path of the reabsorbed light by providing optical irregularities at the surface thereof to make the reflected light scattered. This system is generally called "light confinement".

:i The optical irregularities may be mechanical irregularities, approximately corresponding to light wavelength, which are provided either at the surface of the optically reflecting layer 302 or at the surface of Q the first transparent and electrically conductive layer 303. Alternatively, optical irregularities may be provided i in the first transparent and electrically conductive layer oeoei 303. The optical irregularities in this case may be based on a polycrystal material comprising a plurality of Scrystal grains each having a size approximately 24 corresponding to light wavelength, where the polycrystal material has varied refractive index at the interfaces among the crystal grains, resulting an increase in the optical path in the semiconductor active layer.

Semiconductor Active Layer The semiconductor active layer 303 functions to conduct photoelectric conversion, where incident light generates an electromotive force. As above described, the semiconductor active layer 303 in the photovoltaic element 1O (the solar cell) comprises a single cell structure (having a three-layered structure) having a pin junction comprising an n-type semiconductor layer 305, an i-type semiconductor layer 306 and a p-type semiconductor layer 307 being stacked inthis order. Any of these three semiconductor layers may It. 5 be composed of an amorphous silicon semiconductor material The p-type semiconductor layer 307 may be composed of a microcrystalline silicon semiconductor material. This configuration is only for explanatory purposes and therefore, is not limitative. The semiconductor active *oo* layer 304 may be structured to comprise a plurality of such cells having a pin junction being stacked. As specific •examples in this case, there can be mentioned a tandem structure comprising two cells having a pin junction being stacked, a triple structure comprising three cells :having a pin junction being stacked, and a quadruple having a pin j unc tion being s tac ke'd, and a quadrup le 25 structure comprising four cells having a pin junction being stacked.

The above silicon-containing semiconductor layers constituting the semiconductor active layer may contain Shydrogen atoms or/and halogen atoms such as fluorine atoms in order to compensate dangling bonds contained therein. Further, they may contain a band gap-controlling element such as carbon nitrogen oxygen or germanium (Ge) o To dispose either the p-type semiconductor layer or the n-type semiconductor layer on the side through which light is impinged is optional. In the case where the p-type semiconductor layer is positioned on the side through which light is impinged, namely on the side opposite the foregoing back reflector, an electron travels in the semiconductor active layer from the light incident side toward the back reflector side, and a hole travels in the semiconductor active layer from the back reflector side toward the light incident side. Since the absorption of light is mostly a. occurred at the surface of the light incident side of the semiconductor active layer, it is advantageous to use this structure for an amorphous silicon material (including a "microcrystalline silicon material), which excels in the mobility of electron.

In the case where the p-type semiconductor layer 26 positioned on the light incident side is constituted by an amorphous silicon material doped with a dopant comprising boron the p-type semiconductor layer has a narrow band gap and therefore, in terms of the light absorption, it is inferior to the n-type semiconductor layer when positioned on the light incident side instead of the p-type semiconductor layer. As above described, the p-type semiconductor layer may be composed of a microcrystalline silicon semiconductor material in order for the p-type t> semiconductor layer to have an improved light transmitting property. In any case, to position either the p-type semiconductor layer or the n-type semiconductor layer on which side should be decided depending upon the related factors including the fabrication apparatus.

1= The semiconductor active layer 304 may be designed to have a pn junction comprising a crystalline silicon semiconductor material or a Shottky type junction. In any of these two cases, the semiconductor active layer may comprise a plurality of cells having a pn junction or a 0 shottky type junction being stacked, as well as in the foregoing case.

The semiconductor active layer may be properly formed by a conventional film-forming technique.

Second Transparent and Electrically Conductive Layer The second transparent and electrically 27 conductive layer 308 serves as an upper electrode and also as an antireflection layer in the case of a solar cell.

The second transparent and electrically conductive layer 308 is designed to have a thickness of about 700 A (in the case where the refractive index is about In view of this, the second transparent and electrically conductive layer is desired to have an electric resistivity of preferably 10-1 0 cm or less or more preferably 10- 3 Qcm or less.

o Collecting Electrode The collecting electrode 309 (or the grid electrode) is used in the case where the second transparent and electrically conductive layer 308 is insufficient in flowing an electric current, by disposing it on the second D transparent and electrically conductive layer 308.

The collecting electrode serves to effectively collect an electric current generated by virtue of a photoelectromotive force on the second transparent and electrically conductive layer.

LCD The collecting electrode is desired to be in the form of a comb shape.

The collecting electrode is formed of a material which has a low electric resistance. Specific examples of such material are evaporated metallic materials of Ag, Au, Al, or Cr; and metallic pastes obtained by mixing a colloid

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C.

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28 of carbon, Ag, or Cu with a binder resin into a paste.

The pattern and constituent of the collecting electrode 309 should be determined depending upon the related factors including the electric resistance of the g second transparent and electrically conductive layer 309, the size of the photovoltaic element (the solar cell), and a module prepared using the photovoltaic element (the solar cell).

The foregoing photovoltaic element (the solar cell) Sdescribed above with reference to FIG. 3 is structured so as to provide characteristics desired therefor. However, it is not always sufficient to continuously use as a power supply source. Therefore, in order to improve the durability to environments where it is used and also in order to S" 1 improve the easiness in the installation and the reliability when it is installed at a desired place, it is processed, coo• for instance, as follows. That is, the photovoltaic element (the solar cell) is converted into a module by sealing it by a sealing resin, followed by providing aback reinforcing member at the back side. And if necessary, the resultant module is processed to have holes or bent to have bent portions for the installation.

Film-Forming Method by Electroless Deposition As previously described, the present invention 235 includes a film-forming method by electroless deposition 29process (this film-forming method will be hereinafter referred to as "electroless deposition film-forming method) for forming an indium oxide film.

In the following, the electroless deposition film-forming method will be detailed.

A typical embodiment of the electroless deposition film-forming method for forming an indium oxide film, comprises the steps of: immersing a substrate in an aqueous solution containing at least nitrate ion, indium ion and oC tartrate and maintaining said substrate at a temperature of 10 to 60 C, whereby depositing said indium oxide film on said substrate.

The aqueous solution used in this method will be hereinafter referred to as "plating aqueous solution" in order to distinguish from the aqueous solution used in the foregoing film-forming method by the electro deposition process.

*o oooe oooo ooo ooooo oo Description will be made the aqueous solution the plating aqueous solution) As a source of providing nitrate ion in the plating aqueous solution, there can be used an appropriate source as long as it desirably supplies nitrate ion in the plating aqueous solution. As preferable examples of such nitrate ion-supplying source, there can be mentioned nitric acid S and nitrates such as indium nitrate, sodium nitrate, potassium nitrate, lithium nitrate, aluminum nitrate, and ammonium nitrate. Of these nitrates, indium nitrate is particularly preferable.

For the concentration of the nitrate ion in the 6 plating aqueous solution, there is no particular restriction.

However, in general, it is preferably in the range of 0.001 to 0.5 mol/l, or more preferably in the range of 0.01 to 0.1 mol/l. As long as the concentration of the nitrate ion is more than 0.001 mol/l, indium hydroxide is prevented from being precipitated in the plating aqueous solution. And when the concentration of the nitrate ion is less than mol/l, film deposition desirably proceeds at a practical rate.

S. As a source of the indium ion, an appropriate source i, may be used as long as it desirably supplies indium ion in 0 the plating aqueous solution. As preferable examples of such indium ion-supplying source, there can be mentioned indium salts such as indium nitrate, indium sulfate, and indium chloride. Of these indium salts, indium nitrate is 0 o particularly preferable because it supplies both nitrate ion and indium ion.

For the concentration of the indium ion in the plating aqueous solution, there is no particular restriction.

However, in general, it is preferably in the range of 0.001 S to 0.5 mol/l, or more preferably in the range of 0.01 to 0.1 31 mol/l. As long as the concentration of the indium ion is more than 0.001 mol/l, film deposition desirably proceeds at a practical rate. And when the concentration of the indium ion is less than 0.5 mol/l, unnecessary materials are prevented from being precipitated in the plating aqueous solution, and no coagulated material is deposited on an indium film deposited on the substrate.

For the tartrate contained in the plating aqueous solution, an appropriate tartrate may be optionally used.

(0 As preferable examples of such tartrate, there can be mentioned sodium tartrate, potassium tartrate, sodiumpotassium tartrate, potassium hydrogen tartrate, and oooocalcium tartrate. Of these tartrates, sodium tartrate and sodium-potassium tartrate are particularly preferable.

For the concentration of the tartrate in the plating aqueous solution, there is no particular restriction.

However, in general, it is preferably in the range of 0.00001 to 0.1 mol/l, or more preferably in the range of 0.001 to 0.01 mol/l. As long as the concentration of the tartrate lo is more than 0.00001 mol/l, deposition of an indium oxide film on the substrate efficiently proceeds. And when the .ooooi concentration of the tartrate is less than 0.01 mol/l, there is not occurred such a problem that the plating aqueous solution is clouded to cause the formation of a deposited film comprising an aggregate of opaque powdery materials.

32 In order to maintain the plating aqueous solution without being clouded during the film formation, it is more desirable for the concentration of the tartrate to be 1/200 to 1/5 of the concentration of the indium ion. This is based on a finding obtained through experiments.

For the reason for the above situation, it is considered such that carboxyl or/and an alcoholic hydroxyl which are dissociated from the tartarate contribute to oxidizing the indium ion and therefore, the presence of an \o excessive amount of the tartarate cause a precipitate of the tartarate in the plating aqueous solution. Particularly, in the case of the electroless deposition process, there cannot be supplied any external energy for the oxidation of the indium ion as in the case of the electro deposition 1, process. Therefore, it is desired to control the concentration of the plating aqueous solution as above described.

Description will be made of the film-forming conditions in the electroless deposition film-forming o0 method for forming an indium oxide film.

The temperature of the plating aqueous solution upon the film formation is preferably in the range of 10 to 60 °C, or more preferably in the range of 30 to 50 It is desired for the plating aqueous solution to be maintained at a higher temperature. However, in the case where the 33 temperature of the plating aqueous solution is beyond 60 C, the plating aqueous solution is liable to cloud to entail a problem in that uniform film growth is difficult to be attained. And in the case where the temperature of the plating aqueous solution is less than 10 a problem is liable to entail in that a film deposited on the substrate is insufficient in the adhesion to the substrate and thus, the film is inferior in terms of the physical strength.

For the pH value of the plating aqueous solution, i0 it is different depending upon the kind of a solute or the temperature. However, in general, it is desired to be in the range of 3 to 9. By controlling the pH value of the plating aqueous solution in this range, it is possible to prevent occurrence of problems such that substantial film 1" deposition is not occurred, or a precipitate is formed and because of this, uniform film deposition is not occurred.

In order to control the pH value of the plating aqueous solution as above deqcribed, there is used a small 0 amount of an acid or base is added to the plating aqueous co solution. The acid can include sulfuric acid, nitric acid, :hydrochloric acid, and acetic acid. The base can include sodium hydroxide, potassium hydroxide, and ammonium hydroxide.

The film-forming speed (the deposition rate) is S generally 0.01 to 10 A /second. Particularly, the 34 deposition rate is high at the initial stage of the film formation and thereafter, it is gradually decreased and eventually becomes constant at a given value.

The plating aqueous solution is retained in an appropriate vessel made of a stainless steel or glass.

Alternatively, it is possible to use a vessel made of Cu or Al for retaining the plating aqueous solution whose pH value being relatively high. In order to prevent deposition of an unnecessary film, it is desired for any of these vessels to 0 have an inner wall coated by an oxide material other than indium oxide or a passive material.

For the substrate on which an indium oxide film is o6e to be deposited, an appropriate substrate may be optionally used. For instance, the substrate may be a metallic member made of a metal such as Fe, Pt, Ni, or the like or an alloy such as stainless steel. Alternatively, it may be a member made of a synthetic resin, glass or ceramic.

The surface of the substrate on which an indium o ¢o oxide film is to be deposited is desired to be clean and highly active in terms of the trigger for film formation.

*In this respect, in the case of using a substrate which does not have such surface, it is desired for said substrate to be subjected to surface treatment by way of acid cleaning or alkalicleaning to remove an oxide layer present on the surface, or to surface treatment by way of sensitizeractivator processing. The sensitizer-activator processing may be conducted by a conventional manner using stannous chloride or palladium chloride (see, for instance, [Electroless PlatingJ edited by Denki-Tokin Kenkyukai,

P.

135, published by Daily Industry Newspaper). And for the chemicals used in the sensitizer-activator processing, there is commercially available a sensitizer-activator S-1 or P-l (trade name).

The electroles deposition film-forming method of the io present invention can be employed, for instance, in antistatic finishing treatment and also in the production of a photovoltaic element (a solar cell) or an electrophotographic light receiving member, where insufficient points in the prior art are desirably improved.

This situation will be described in more detail in the following. Antistatic Finishing Treatment The antistatic finishing treatment is used for preventing a glass member from gathering dust due to static electricity. It is also used in the production of an eo. electronic device. Particularly, in the case of an electronic device, there is often occurred a problem such that electrostatic charging is caused in the 0 electronic device to attract dust, followed by suffering 04< from further electrostatic charging, where a high voltage 36 is applied to its electronic components, whereby the components are damaged. In order to prevent this problem from being occurred, in the production of an electronic device, its electronic components and peripheral members are subjected to antistatic finishing treatment.

For the glass member, it is extremely likely to be suffered from electrostatic charging, because its principal constituent is silicon oxide. For the electronic components and peripheral members for an electronic device in recent iO years, they are mostly made of plastics and therefore, are also extremely likely to be suffered from electrostatic charging. In this connection, these are usually treated as will be described in the following, prior to using them in practice. That is, their surfaces are subjected to substitution treatment by hydrophilic agent of a metal alkoxide or the like, or to electroconductive treatment by e way of coating with an electrically conductive carbon material, a metal or the like. However, in any of the above antistatic finishing Streatments, in many cases, a problem of coloring is :i occurred. For the components which are used in a inconspicuous part, they are less problematic even when they are colored. However, for the components which are used in an indicative part, particularly, as a panel cover or the like, they are not suitable when undesirably colored..

Sthe like, they are not suitable when undesirably colored. i 37 Additionally, in order to coat an electronic component by a transparent and electrically conductive film composed of an indium oxide or ITO (comprising an indium oxide doped with tin in an amount of several f there is usually employed a manner using a vacuum apparatus or a manner by way of sputtering. However, these manners are disadvantageous in that the apparatus used in any of them is remarkably costly and any of the manners is not practical in treating a small electronic component.

In this connection, for such colored electronic jO component which is positioned in an indicative part of an electronic device, an inconspicuously thinner coating is often employed, sacrificed with respect to the conductivity.

:I An indium oxide film formed in accordance with the ee electroless deposition film-forming method of the present invention can be provided at a reasonable production cost because it can be produced in a simple manner using a less expensive fabrication apparatus, and the indium oxide film 620 excels in transparency. Therefore, the indium oxide film is "suited for use, particularly as a cover for an indicative part of an electronic device. In addition, in the electroless deposition film-forming method of the present "invention, the treating temperature is not high and S therefore, various members including electronic components 38 can be desirably treated in the present invention.

Photovoltaic Element (Solar Cell) The electroless deposition film-forming method of the present invention can be effectively employed in the production of a photovoltaic element, particularly a solar cell.

Typically, in a solar cell (excluding a point contact type solar cell having a specific configuration) in which the present invention can be applied, its surface jo through which light is impinged is used as an electrode.

By the way, for the point contact type solar cell, it is required for the semiconductor material used therein to have a long lifetime and a large mobility with respect to an electron and hole. A desirable contact type solar cell 45 is difficult to be realized still at the present time unless a single crystalline silicon material of a high grade is used as the semiconductor material. Now, for a polycrystalline silicon material, an amorphous Si material, an amorphous SiGe material, a 0 microcrystalline Si material, and a polycrystalline CuInSe S material which are often used as a semiconductor member in oo.: the above described solar cell, the surface of the semiconductor member on the side through which light is impinged is required to have a transparent and electrically conductive film formed thereon as an electrode.: 39 This transparent and electrically conductive film, also serving as a light reflection preventive layer, is usually made to have an optical thickness corresponding to 1/4 of a wavelength giving a maximum value in the sensitivity spectrum of the semiconductor. In more detail, as the sensitivity maximum wavelength is in therange of about 500 nm to about 1 pm, the above optical thickness is in the range of about 1200 A to about 2500 A.

And the refractive index of the transparent and electrically conductive film is generally about 2. In this connection, the film thickness of the transparent and electrically conductive film is in the range of about 600 A to about 1300

A.

The presently known transparent and electrically conductive materials are indium oxide, ITO, zinc oxide, tin oxide, alloys of these, and those incorporated with gallium..

oxide or nitrides. Of these, indium oxide and ITO are the iooooe highest in terms of the conductivity, where the highest value with respect to the conductivity is about 1 x 104 S/cm.

do Hence, it is difficult to attain a conductivity eeo* S which is higher than the above value at the present time.

This situation makes it necessary to provide a grid electrode or an integrated electrical connection, having a Swidth of some millimeters to some centimeters, on the S transparent and electrically conductive film formed on the 40 semiconductor member. However, the grid electrode does not allow light to transmit therethrough, and because of this, a shadow of light (that is, sunlight) is unavoidably formed, resulting in a loss in the utilization efficiency of incident light, which leads to a decrease in the photoelectric conversion efficiency of the solar cell.

In order to sufficiently utilize incident light in the solar cell, it is required for the transparent and electrically conductive film to be highly transparent and i0 to have a sufficiently high conductivity.

In addition, in the case of producing a solar cell using a film-forming system using a vacuum deposition apparatus, expenses for the facility investment and maintenance are large, and therefore, a solar cell obtained unavoidably costly.

However, the electroless deposition film-forming method of the present invention enables to efficiently form a high quality indium oxide film having an excellent .transparency and a sufficiently high conductivity, which 0'0 is similar to that formed by way of sputtering, in a simple ooooo manner using a less expensive fabrication apparatus. Thus, the indium oxide film can be provided at a reasonable production cost. This situation enables to produce a solar Scell at a reasonable production cost.

41 Electrophotoaraphic Liaht Receivina Member An electrophotographic photosensitive member comprising a photoconductive layer formed on an electrically conductive substrate.

The electrophotographic photosensitive member is used in an electrophotographic apparatus for forming an electrostatic latent image by subjecting its surface to charging to a prescribed electric potential, followed by subjecting to image exposure, wherein only in a portion io of the surface having been subjected to light exposure, a photocarrier is generated, followed by moving to compensate the charged electric potential. The photoconductive layer of the electrophotographic photosensitive member generally comprises a photosensitive material or a carrier transportation material in which either a hole or an electron is major.

Particularly, for instance, in the case where the electrophotographic photosensitive member is of an organic series, a hole acts as a transportation carrier in many cases. SIn the case where the electrophotographic photosensitive member is for use in a laser beam printer, the electrophotographic photosensitive member is required. to sufficiently form an electrostatic latent image in a S6 region of red light in order to have a sensitivity to a 42 semiconductor laser. This requirement can be satisfied by making the photoconductive layer thereof to comprise a functionally divided layer structure comprising a charge generation layer and a charge transportation layer, where 1) the electrophotographic photosensitive member has an improved stability and an improved lifetime.

Here, the surface of the electrophotographic photosensitive member which is subjected to charging comprises a free surface of the functionally divided layer r0 structure, where a charge can be relatively easily prevented from invading into the photoconductive layer.

However, it is necessary to have a specific due care about the substrate side of the electrophotographic photosensitive member. That is, for instance, in the case 1i where negative charging is preferred because of the characteristics of a toner used, the charge generation layer is position on the substrate side and the charge transportation layer is positioned on the charge generation layer. In this case, if a hole (as a carrier) is injected Z from the substrate side, the surface potential is neutralized to significantly disturb the contrast of the electrostatic image on the surface (the free surface) of the electrophotographic photosensitive member. In order to S" prevent this problem from occurring, it is necessary to 7' interpose a hole injection prohibition layer (as a blocking 43 layer) between the substrate and the charge generation layer.

Separately, when an electron (as another carrier) is remained in the photoconductive layer (or the charge transportation layer), a ghost is liable to occur. In order to prevent this problem from occurring, it is necessary for the electrophotographic photosensitive member to be configured so that such electron is escaped to the substrate side.

io Now, for the foregoing hole injection inhibition layer (the blocking layer), it is very effective that the layer is comprised of an n-type semiconductor material having a large band gap. Presently, an extremely few ntype organic semiconductor materials are available. In this respect, as the foregoing semiconductor material to *oo, constitute the hole injection inhibition layer (the go..oi blocking layer), a transparent and electrically conductive film made of an inorganic material, eeoc specifically, an inorganic oxide material is stable and q0 uite suitable. However, as well as in the foregoing case of the photovoltaic element (the solar cell), in the case "where this transparent and electrically conductive film is formed by way of vacuum film-forming process such as sputtering in the production of an electrophotographic S photosensitive member, the resulting electrophotographic 44 photosensitive member becomes unavoidably costly.

For the formation of an inorganic transparent and electrically conductive film, there has been proposed a sol-gel film-forming method. But this film-forming method Sis still problematic in that desirable film formation cannot be stably conducted.

The present invention enables to desirably solve the above problems. Particularly, in accordance with the electroless deposition film-forming method, it is possible ro to efficiently form an effective blocking layer (a hole injection inhibition layer) comprising a high quality indium film as the transparent and electrically conductive film. The indium oxide film formed in accordance with the present invention is never problematic even in the case of producing an organic electrophotographic photosensitive member. That is, the ooooo indium oxide film is neither deteriorated nor eluted in the successive coating step. Hence, the present invention enables to provide a desirable electrophotographic

O

20 photosensitive member at a reasonable production cost.

EXAMPLES

*ooooo The present invention will be described in more detail with reference to examples. It should be understood that these examples are only for illustrative purposes and $2 they are not intended to restrict the scope of the present 45 invention to them.

In the following, Examples 1 to 4 are of the electro deposition film-forming method of the present invention, and Examples 5 to 11 are of the electroless deposition film-forming method of the present invention.

Examnle 1 In this example, there was prepared a solar cell (a photovoltaic element) having the configuration shown in FIG. 3 whose first transparent and electrically conductive layer (303) comprising an indium oxide film formed in accordance with the electro deposition film-forming method of the present invention. This solar cell was prepared in the following manner.

Provision of substrate:' There was provided a well-cleaned stainless steel 430BA plate (trade name) as the electrically conductive substrate 301.

Formation of optically reflecting layer: On the substrate 301, there was formed a 1000 A o0 thick Ag-film as the optically reflecting layer 302 by DC magnetron sputtering without particularly heating the substrate. As a result of optically examining the surface of the Ag-film, it was found to be a mirror surface having a reflectivity of more than 98% over the wavelength range of from 400 to 1100 nm.

46 Formation of first transparent and electrically conductive layer: The substrate 301 having the Ag-film as the optically reflecting layer 302 formed thereon was positioned in the film-forming apparatus shown in FIG. 1 as the negative electrode (103), and in accordance with the previously described procedures for forming an indium film by way of electro deposition process, there was formed a 5000 A thick indium oxide film as the first transparent iv and electrically conductive layer 303 on the Ag-film as the optically reflecting layer 302, where an aqueous solution containing indium nitrate at a concentration of 0.02 mol/l was used as the aqueous solution (102), and film formation was conducted for 25 minutes while maintaining the aqueous solution (102) at 30 As a result of optically examining the surface of the indium oxide film, it was found to be slightly hazy andprovided with texture.

Formation of semiconductor active layer: The resultant obtained in the above was positioned ao in a conventional RF plasma CVD apparatus, where a semiconductor active layer 304 having a pin junction was formed on the first transparent and electrically conductive layer 303 (comprising the indium oxide film) by sequentially forming a 250 A thick n-type amorphous Q silicon semiconductor layer 305 with the use of SiH, gas, 47

H

2 gas and PH, gas at respective flow rates of 5 seem, 10 sccm, and 0.001 seem; a 2000 A thick i-type amorphous silicon semiconductor layer 306 with the use of SiH, gas and H 2 gas at respective flow rates of 5 sccm and 10 sccm; and a 150 A thick p-type microcrystalline silicon semiconductor layer 307 with the use of SiH gas, H 2 gas and BF, gas at respective flow rates of 5 seem, 1500 seem, and sccm.

Formation of second transparent and electrically 0 conductive layer: On the p-typemicrocrystalline silicon semiconductor layer 307 of the semiconductor active layer 304, there was formed a 660 A thick ITO film as the second transparent and S* electrically conductive layer 308 by means of a conventional heat resistance evaporation process wherein an o*" In source and a Sn source were evaporated in an 02 atmosphere, where the ITO film exhibited blue interference color. At this time, the ITO film was formed in a rotund form, so as to have an effective area of 0.25 o0 cm 2 when a grid electrode (a collecting electrode) is formed thereon.

Formation of grid electrode (collecting electrode): *On the ITO film as the as the second transparent and electrically conductive layer 308, an Ag-film was formed in a cruciate form at a thickness of 3000 A as 48 the grid electrode 309 (the collecting electrode) by means of a conventional heat resistance evaporation process.

Thus, there was obtained a solar cell (aphotovoltaic element) SUsing a conventional solar simulator, the resultant solar cell was subjected to measurement with respect to I-V characteristics under pseudo sunlight having an intensity of 100 mW/cm 2 and a spectrum ofAM 1.5. As a result, the solar cell was found to have a short-circuit current i density of 11. 1 mA/cm 2 an open-circuit voltage of 0.95 V, a fill factor of 0.68, and a photoelectric conversion efficiency of 7.2%.

Separately, for comparison purposes, the following comparative example will be described.

Comparative Example 1' oo..

The procedures for the preparation of the solar cell in Example 1 were repeated, except that as the first transparent and electrically conductive layer 303, a 5000 A thick indium oxide film by DC magnetron sputtering 9o without particularly heating the substrate, to thereby obtain a solar cell.

S"The resultant solar cell was evaluated in the same *manner as in Example 1.

As a result, the solar cell was found to have a S short-circuit current density of 10. 5 mA/cm 2 an open- 49 circuit voltage of 0.96 V, a fill factor of 0.67, and a photoelectric conversion efficiency of 6.8%.

Based on the results obtained in Example 1 and Comparative Example it is understbod that the solar cell prepared by employing the present invention is apparently surpassing the comparative solar cell particularly in terms of the photoelectric conversion efficiency.

Examle_ 2 In this example, there was prepared a solar cell (a photovoltaic element) having the configuration shown in FIG. 3 whose first transparent and electrically conductive layer (303) comprising an indium oxide film formed in accordance with the electro deposition film-forming method of the present invention. This solar cell was prepared in 1-5 the following manner.

,o Provision of substrate: There was provided a well-cleaned stainless steel 430BA plate (trade name) as the electrically conductive substrate 301.

.2o Formation of optically reflecting layer: On the substrate 301, there was formed a two- Slayered optically reflecting layer 302 in the following .manner.

ooo First, on the substrate 301, there was formed a 1000 A thick Al-film by DC magnetron sputtering without 50 particularly heating the substrate. As a result of optically examining the surface of the Al-film, it was found to be a mirror surface having a reflectivity of more than 89% over the wavelength range of from 400 to 1100 nm.

Then, on the Al-film thus formed, there was formed a 1000 A thick zinc oxide film by DC magnetron sputtering without particularly heating the substrate. As a result of examining the surface of the zinc oxide film, it was found to exhibit green to pink interference color.

io And the surface was found to be a mirror surface.

Formation of first transparent and electrically conductive layer: The substrate 301 having the two-layered optically reflecting layer 302 (comprising theAl-filmand ,5 zinc oxide film) formed thereon was positioned in the film-forming apparatus shown in FIG. 1 as the negative electrode (103), and in accordance with the previously described procedures for forming an indium film by way of electro deposition process, there was formed a 10000 A 110 thick indium oxide film as the first transparent and electrically conductive layer 303 on the zinc oxide film of S"the two-layered optically reflecting layer 302, where an aqueous solution obtained by providing an aqueous solution containing indium nitrate at a concentration of 0.02 mol/l and adding 6 g/l of sucrose to said aqueous solution 51was used as the aqueous solution (102), and film formation was conducted for 20 minutes while maintaining the aqueous solution (102) at 50 *C.

As a result of optically examining the surface of the indium oxide film thus formed, it was found to be slightly hazy and provided with texture.

Formation of semiconductor active layer: In accordance with the procedures for forming the semiconductor active layer 304 in Example i, there was ic formed a 2400 A thick semiconductor active layer 304 having a pin junction on the first transparent and electrically conductive layer 303 (comprising the indium oxide film).

Formation of second transparent and electrically S conductive layer: On the p-type microcrystalline silicon semiconductor layer 307 of the semiconductor active layer 304, there was formed a 660 A thick ITO film as the second transparent and electrically conductive layer 308, o in accordance with the procedures for forming the forming the second transparent and electrically conductive layer ooooo 308 in Example 1.

Formation of grid electrode (collecting electrode): On the second transparent and electrically 23 conductive layer 308, there was formed a cruciate grid 52 electrode 309 (a collecting electrode) in accordance with the procedures for the formation of the grid electrode 309 in Example i.

For the resultant obtained, a pair of power output connections were provided.

Thus, there was obtained a solar cell (a photovoltaic element) The resultant solar cell was evaluated in the same manner as in Example i.

f As a result, the solar cell was found to have a short-circuit current density of 11. 3 mA/cm', an opencircuit voltage of 0.97 V, a fill factor of 0.68, and a photoelectric conversion efficiency of Based on the evaluated results, it is understood that the use of the back reflector comprising the twolayered optically reflecting layer 302 and the first transparent and electrically conductive layer 303 (comprising the indium oxide film) provides a superior effect. And for the reason why the solar cell obtained in ao this example has an improved open-circuit voltage, it is S"considered such that occurrence of shunt is slight.

eoooo Examol 3 In this example, there was prepared a solar cell (a Sphotovoltaic element) having the configuration shown in S FIG. 3 whose first transparent and electrically conductive 53 layer (303) comprising an indium oxide film formed in accordance with the electro deposition film-forming method of the present invention. This solar cell was prepared in the following manner.

Provision of substrate: There was provided a well-cleaned stainless steel 430BA plate (trade name) as the electrically conductive substrate 301.

Formation of optically reflecting layer: O On the substrate 301, there was formed a twolayered optically reflecting layer 302 comprising a 1000 A thick Al-film and a 1000 A thick zinc oxide film being stacked in this order from the substrate side, in accordance with the procedures for the formation of the two-layered optically reflecting layer 302 in Example 2.

Formation of first transparent and electrically conductive layer: On the zinc oxide film of the two-layered optically reflecting layer 302, there was formed a 10000 o A thick indium oxide film as the first transparent and electrically conductive layer 303, in accordance with the 99*9*9 procedures for the formation of the first transparent and electrically conductive layer 303 in Example 2.

Formation of semiconductor active layer: a The resultant obtained in the above was positioned 54 in a conventional RF plasma CVD apparatus, where there was formed, on the first transparent and electrically conductive layer 303 (comprising the indium oxide film), a semiconductor active layer 304 having a triple cell 6 structure comprising a bottom cell with a pin junction, a middle cell with a pin junction, and a top cell with a pin junction being stacked in this order from the substrate side, said bottom cell comprising a 150 A thick n-type amorphous silicon semiconductor layer, a 900 A thick i-type amorphous silicon-germanium semiconductor layer, and a 100 A thick p-type microcrystalline silicon semiconductor layer being stacked; said middle cell comprising a 150 A thick n-type amorphous silicon semiconductor layer, a 900 A thick i-type amorphous silicon-germanium semiconductor layer, and a 100 A thick p-type microcrystalline silicon semiconductor layer being stacked; and said top cell comprising a 150 A thick n-type amorphous silicon semiconductor layer, a 900 A thick i-type amorphous silicon semiconductor layer, and o0 a 100 A thick p-type microcrystalline silicon semiconductor layer being stacked.

The n-type amorphous silicon semiconductor layer in each cell was formed using SiH gas, H 2 gas and PH, gas at respective flow rates of 5 seem, 10 seem, and 0.001 sccm.

o^ The p-type microcrystalline silicon semiconductor 55 layer in each cell was formed using SiH 4 gas, H 2 gas and BF, gas at respective flow rates of 5 sccm, 1500 seem, and sccm.

The i-type amorphous silicon-germanium semiconductor layer in the bottom cell was formed using SiH, gas, GeH 4 gas, and H 2 gas at respective flow rates of 3 sccm, 2 sccm, and 10 sccm; the i-type amorphous silicon-germanium semiconductor layer in the middle cell was formed using SiH gas, GeH 4 gas, and H 2 gas at tO respective flow rates of 4 sccm, 1 seem, and 10 seem; and the i-type amorphous silicon semiconductor layer in the top cell was formed using SiH, gas and H 2 gas at respective flow rates of 5 seem and 10 sccm.

Formation of second transparent and electrically S conductive layer: On the p-type microcrystalline silicon semiconductor layer of the top cell of the semiconductor active layer 304, there was formed a 660 A thick ITO film as the second transparent and 0 electrically conductive layer 308, in accordance with the procedures for forming the forming the second transparent and electrically conductive layer 308 in Example 1.

Formation of grid electrode (collecting electrode): On the second transparent and electrically d6 conductive layer 308, there was formed a cruciate grid

S.

S

56 electrode 309 (a collecting electrode) in accordance with the procedures for the formation of the grid electrode 309 in Example 1.

For the resultant obtained, a pair of power output S connections were provided.

Thus, there was obtained a solar cell (a photovoltaic element).

The resultant solar cell was evaluated in the same manner as in Example 1.

i As a result, the solar cell was found to have a short-circuit current density of 7.1 mA/cm 2 an opencircuit voltage of 2.21 V, a fill factor of 0.72, and a photoelectric conversion efficiency of 11.3%.

.Separately, for comparison purposes, the following comparative example will be described.

Comparative Example 3' o The procedures for the preparation of the solar cell in Example 3 were repeated, except that the thickness (1000 A of the zinc oxide film of the two-layered .2do optically reflecting layer 302 was changed to 5000 A, and the formation of the indium oxide film as the first transparent and electrically conductive layer 303 was omitted, to thereby obtain a solar cell having a triple rS cell structure.

2$ The resultant solar cell was evaluated in the same 57 manner as in Example i.

As a result, the solar cell was found to have a short-circuit current density of 6.9 mA/cm 2 an opencircuit voltage of 2.20 V, a fill factor of 0.72, and a photoelectric conversion efficiency of 10.9%.

Based on the above results obtained in Example 3 and Comparative Example the following facts are understood.

That is, the solar cell prepared by employing the present invention is surpassing the comparative solar cell (0 particularly in terms of the short-circuit current density, and this situation makes the former solar cell to have a greater photoelectric conversion efficiency than that of the latter solar cell. For the reason for this, it is considered such that the indium oxide film as the first transparent and If electrically conductive layer formed in accordance with the electro deposition film-forming method of the present invention has an excellent surface texture and the indium oxide film having this excellent surface texture functions as a back reflector, very efficiently.

Example-1 In this example, there was prepared a solar cell (a photovoltaic element) having the configuration shown in FIG. 3 whose second transparent and electrically conductive layer (308) comprising an indium oxide film Li- formed in accordance with the electro deposition film- 58 forming method of the present invention. This solar cell was prepared in the following manner.

Provision of substrate: There was provided a well-cleaned stainless steel S 430BA plate (trade name) as the electrically conductive substrate 301.

Formation of optically reflecting layer: On the substrate 301, there was formed a 1000 A thick Ag-film as the optically reflecting layer 302 by DC fo magnetron sputtering without particularly heating the substrate.

Formation of first transparent and electrically conductive layer: On the Ag-film as the optically reflecting layer 302 ooooo• formed on the substrate 301, there was formed a 5000 A thick indium oxide film as the first transparent and electrically conductive layer 303 by DC magnetron sputtering without particularly heating the substrate.

coo* Formation of semiconductor active layer: 10 The resultant obtained in the above was positioned in a conventional RF plasma CVD apparatus, where a semiconductor active layer 304 having a pin junction was formed on the first transparent and electrically conductive layer 303 (comprising the indium oxide film) by l( sequentially forming a 250 A thick n-type amorphous 59 silicon semiconductor layer 305 with the use of SiH gas,

H

2 gas and PH, gas at respective flow rates of 5 seem, 10 seem, and 0.001 sccm; a 2000 A thick i-type amorphous silicon semiconductor layer 306 with the use of SiH 4 gas and H 2 r gas at respective flow rates of 5 seem and 10 sccm; and a 150 A thick p-type microcrys talline silicon semiconductor layer 307 with the use of SiH 4 gas, H 2 gas and BF, gas at respective flow rates of 5 seem, 1500 sccm, and sccm.

0 Formation of second transparent and electrically conductive layer: The substrate 301 having the optically reflecting layer 302, the first transparent and electrically conductive S.layer 303 and the semiconductor active layer 304 formed in r f this order thereon was positioned in the film-forming "apparatus shown in FIG. 1 as the negative electrode (103), and in accordance with the previously described procedures for forming an indium film by way of electro deposition process, there was formed a 600 A thick 0 indium oxide film in a rotund form as the second transparent and electrically conductive layer 308 on the p-type microcrystalline silicon semiconductor layer 307 of the semiconductor active layer 304, where an aqueous solution obtained by providing an aqueous solution (a) 1y containing indium ion at a concentration of 0.05 mol/l, 60 adding, to said aqueous solution a nitric acid aqueous solution containing nitric acid at a concentration of 0.02 mol/l in an amount of 1 ml versus 500 ml of said aqueous solution, followed by adding 0.5 g/l Sof dextrin was used as the aqueous solution (102), and film formation was conducted for 3 minutes while maintaining the aqueous solution (102) at 45 In this case, a film exhibiting blue interference color was deposited on the p-type microcrystalline silicon semiconductor layer 307 So at a thickness of 600 A from the aqueous solution (102) From this, the film deposited on on the p-type microcrystalline silicon semiconductor layer was found to be an indium oxide film.

Formation of grid electrode (collecting electrode) On the second transparent and electrically conductive layer 308, there was formed a cruciate grid

C,

electrode 309 (a collecting electrode) in accordance with :.the procedures for the formation of the grid electrode 309 in Example i.

For the resultant obtained, a pair of power output connections were provided.

Thus, there was obtained a solar cell (a photovoltaic element) The resultant solar cell was evaluated in the same Smanner as in Example i.

61 As a result, the solar cell was found to have satisfactory solar cell characteristics as well as that obtained in Example 1, although it is liable to have some room to be more improved in terms of the shunt.

SIn the following, examples 5 to 11 relating to the electroless deposition film-forming method of the present invention will be described.

ExamnIe There was provided an aqueous solution obtained by dissolving 0.08 mol/l of indium nitrate and 0.003 mol/l of sodium tartrate in pure water. The aqueous solution was introduced into a vessel made of heat resisting glass.

While maintaining the aqueous solution contained in the glass vessel at 30 °C a Ni-coated steel plate was immersed in the aqueous solution for 2 hours. As a result, an about 1000 A thick indium oxide film was deposited on the Ni-coated steel plate.

Evaluation was conducted of the indium oxide film deposited on the Ni-coated steel plate. As a result, the indium oxide film was found to have a conductivity of a sheet resistance of 100 to 10 k Q L and a light transmittance of more than 85%, where it exhibited interference color. Then, the indium oxide film deposited on the Ni-coated steel plate was subjected to X-ray 2- microprobe analysis (XMA). As a result, it was found to 62 comprise oxygen and indium. On the basis of this result, it was found to be surely an indium oxide film.

Examie 6 A glass plate was subjected to sensitizer-activator E processing using stannous chloride and palladium chloride.

The glass plate thus treated was treated in the same manner as in Example 5 by immersing it in the aqueous solution contained in the glass vessel for 4 hours. As a result, an indium oxide film was deposited on the glass jO plate at a thickness of about 1000 A.

Evaluation was conducted of the indium oxide film deposited on the glass plate. As a result, the indium oxide film was found to have a conductivity of a sheet resistance of 100 to 10 kQ/ and a light transmittance of if more than 85%, where it exhibited interference color.

Then, the indium oxide film deposited on the glass plate was subjected to X-ray microprobe analysis (XMA). As a result, it was found to comprise oxygen and indium. On the basis of this result, it was found to be surely an indium 0 oxide film.

Comparative Example 1 The procedures of Example 5 were repeated, except for replacing the indium nitrate by indium sulfate. However, no'film formation was occurred.

This result indicates that to contain nitrate ion 63 in the aqueous solution is indispensable for causing the formation of an indium oxide film.

Comparative Example 2 The procedures of Example 5 were repeated, except for replacing the indium nitrate by indium chloride.

However, no film formation was occurred.

This result indicates that to contain nitrate ion in the aqueous solution is indispensable for causing the formation of an indium oxide film.

o Example 7 [application of the electroless deposition film-forming method in the preparation of an antistatic member] There was provided an aqueous solution containing 0.2 mol/l of indium nitrate and 0.001 mol/l of sodium it tartrate.

A stainless steel vessel having an inner size of 350 mm x 500 mm x 150 mm (depth) was filled with said aqueous solution, and the aqueous solution contained in the stainless steel vessel was maintained at 50 C.

Under this condition, a soda-lime glass plate having been subjected to sensitizer-activator processing was immersed in the aqueous solution contained in the stainless steel vessel for 5 hours while agitating the aqueous solution.

As a result, an about 1500 A thick indium oxide 2 64 film was deposited on the soda-lime glass plate. The indium oxide film formed on the soda-lime glass plate was subjected to atmospheric annealing at 90 -C for 2 hours, whereby the indium oxide became to have an improved adhesion with the soda-lime glass plate.

By this, a desirable antistatic indium oxide film could be formed by a simple manner.

It is understood that in comparison with the case of forming an antistatic indium oxide film by vacuum deposition or sputtering, using a simple apparatus but not using such a large and costly apparatus as used in the vacuum deposition or sputtering and while greatly reducing the labor required for the film formation, a desirable antistatic indium oxide film can be effectively i formed by a simpler manner according to the electroless deposition film-forming method of the present invention.

*.oo Now, the surface of the soda-lime glass plate having the indium oxide film thereon was electrically connected to a high-voltage supply unit of +5.5 kV, and scanning was conducted at a speed of 50 mm/second while charging the soda-lime glass plate using a corona charger of 30 mm in charging width and 330 mm in length for 30 seconds. After this, the residual potential of the surface of the sodalime glass plate was measured using a surface potentiometer.

As a result, the residual potential was found to be '1i +2 V (the error range: 5 V) which indicates an extremely good antistatic ability.

On the other hand, for a soda-lime glass plate (having been subjected to sensitizer-activator processing) f with no indium oxide film which was treated in the same manner as in the above, the residual potential was found to be +200 V.

The antistatic finishing of this example is possibly used to other glasses than soda-lime glass, such as a non-alkaline glass, a borosilicate glass, a phosphosilicate, glass, a bariumaluinum silicate glass such as a Corning Glass 7059 (trade name) or the like.

Such antistatic-finished glass as above described can be desirably used as a surface protective glass for a ir display or as an exhibition protective glass for an ornament article, because it can effectively avoid dust.

Example 8 [application of the electroless deposition film-forming method in the production of a solar cell (a photovoltaic element) This example is an embodiment of the electroless deposition film-forming method of the present invention when used in the formation of an upper electrode of a photovoltaic element (as a solar cell) formed on an electrically conductive substrate comprising a SUS 430 BA 66 stainless steel plate (trademark name).

In this example, the photovoltaic element (as the solar cell) comprises a photovoltaic element (a solar cell) obtained by forming a 1000 A thick Al-film on an electrically conductive substrate comprising a SUS 430 BA (bright-annealed) stainless steel plate by DC magnetron sputtering using an Al-target, forming a 16000 A thick zinc oxide film by DC magnetron sputtering using a target comprising a sintered zinc oxide material, and J0 forming a semiconductor active layer having apin junction structure on said zinc oxide film, comprising a 200 A thick n-type amorphous silicon semiconductor layer formed by plasma CVD, a 2000 A thick i-type amorphous silicon semiconductor layer formed by plasma CVD, and a 150 A thick p-type microcrystalline silicon semiconductor layer formed by plasma CVD being stacked in this order from the substrate side.

Here, description will be made of the constituents of the solar cell.

The foregoing 430 ferritic stainless steel plate as the substrate was used for the reason that it can be readily contacted to a magnet and therefore, the apparatus in the successive steps can be easily designed. However, it is possible to use a martensitic stainless steel plate, an j austenitic stainless steel plate, or an anticorrosion 67 platinum plate as the substrate.

The bright annealing treatment for the stainless steel substrate was employed for the reason that it is relatively simple and can readily provide a relatively flat f surface. However, it is possible for the stainless plate to have a surface applied with surface roughening treatment represented by 2D treatment, or to have a mirror surface by mechanical or electrolytic polishing.

For the formation of the Al film and zinc oxide film, DC magnetron sputtering was used for the reason that the film-forming conditions can be easily conducted. However, it is possible to employ RF sputtering instead of the DC magnetron sputtering. Alternatively, in the case where a metal target such as an Al-target is used, it is possible i5' to employ DC sputtering with no aide of a magnet.

For the Al-film, since light having a wavelength close to an energy of the forbidden band of the semiconductor material formed on the Al-film is partially passed through the semiconductor layer, the Al-film serves as a reflecting i layer to effectively reflect the light back into the semiconductor layer. This reflecting layer is necessary to have a high reflectivity to the light having a longer wavelength than that of red light in the case where the semiconductor layer comprises an amorphous silicon material.

2' In this respect, it is possible for the reflecting layer 68 to be constituted by Au, Ag or Cu, other than Al.

For the zinc oxide film, it makes the reflected light to be sufficiently scattered to efficiently travel into the semiconductor layer. In this connection, by f relatively thickening the zinc oxide film, it is provided with irregularities at the surface. The zinc oxide film can be made to have conductivity, and therefore, it serves as a part of an electric circuit particularly when a solar cell is completed, without deteriorating the characteristics.

As described above, the semiconductor active layer of the solar cell has a pin junction structure. However, in the case where the lifetime of the carrier is long, the semiconductor active layer may be designed to have a pn :junction structure. In the case where the pin junction if structure comprises an amorphous silicon material, since the photogenerated carriers in the p-type layer and the n-type layer never contribute to the electric current, these layers are desired to be as thin as possible, as long as they establish the semiconductor junction.

20 Film formation by the foregoing plasma CVD used .:.oei for the formation of the pin junction structure is conducted, for instance, in the following manner. A film-forming raw o •o material gas principally comprising silane gas is flown ooooo between opposite electrodes while applying an RF power between said electrode to generate plasma in the film- 69 forming raw material gas, whereby the film-forming raw material gas is decomposed to cause the formation of a deposited film on a substrate.

In order to form a p-type semiconductor layer, an r element such as B or Al is introduced into a film formed as the p-type semiconductor layer. In order to form an n-type semiconductor layer, an element such as P or As is introduced into a film formed as the n-type semiconductor layer.

The p-type semiconductor layer in this example is 1, composed of the microcrystalline material in order for the p-type semiconductor layer to be high enough in terms of the light transmittance, because it is positioned on the side through which light is impinged. It is known that the use of a layer composed of a microcrystalline material as the p-type semiconductor layer of a solar cell to make the solar cell to have an improved open-circuit voltage. In order to form such microcrystalline material layer by plasma CVD, an film-forming raw material gas diluted by hydrogen gas in a large amount is used, and an electric power applied upon the -3 film formation is set at a high level.

Now, in this example, the foregoing photovoltaic element (as the solar cell) was immersed in an aqueous solution containing 0.01 mol/l of indium nitrate and 0.0001 mol/l of sodium tartrate contained in a treating vessel i( made of stainless steel while maintaining the aqueous

S

70 solution at 40 'C for an hour, whereby a 600 A thick indium oxide film was formed on the p-type semiconductor layer of the photovoltaic element. The indium oxide film was found such that it desirably extended over the entirety of the p-type semiconductor layer while filling local defects including pinholes present in the semiconductor active layer.

In order to passivate short-circuited defects present in the semiconductor active layer by way of local I3 etching, the resultant obtained in the above was immersed in a saturated aluminum sulfate solution having a conductivity of 60 S/cm in which a counter electrode was positioned, and a voltage pulse of -5 V and 0.1 s was intermittently applied between the resultant and the counter electrode, five times. By this, portions of the indium oxide film situated in the peripheries of the locally short- **oo circuited minute defects including pinholes were etched, whereby the defects could be substantially removed.

After this, a grid electrode (a collecting o electrode) comprising Au was formed on the indium oxide film i by means of a conventional heat resistance evaporation process, followed by providing a pair of power output oO** connectionds. Thus, there was obtained a solar cell.

Using a conventional solar simulator, the resultant solar cell was subjected to measurement with respect to 71- I-V characteristics under pseudo sunlight having an intensity of 100mW/cm 2 and aspectrumofAM 1.5. As aresult, the solar cell was found to have a short-circuit current density of 14 mA/cm 2 an open-circuit voltage of 0.97 V, a fill factor of 0.68, and a photoelectric conversion efficiency of 9.23%.

Further, in order to evaluate the transparency of the upper transparent electrode. comprising the indium oxide film, the collection efficiency against the light having a (0 wavelength of 400 nm (this collection efficiency will be hereinafter referred to as Q400) was measured. As a result, it was found to be 62%. These photoelectric conversion efficiency and collection efficiency were found to be the substantially the same as those of a solar cell having an i upper transparent electrode comprising a transparent and electrically conductive film formed by vacuum deposition or sputtering.

Hence, it is understood that the solar cell obtained in this example has satisfactory solar cell characteristics.

These facts indicates that the electroless deposition film-forming method of the present invention enables to effectively form a desirable indium oxide film having a sufficient conductivity and a sufficient transparency, which can be effectively used as the upper 72 transparent and electrically conductive electrode of a solar cell. In any case, the electroless deposition film-forming method of the present invention enables to effectively form a high quality indium oxide film usable r as a transparent and electrically conductive film in a semiconductor element, in a simple manner and at an unexpensive production cost.

The indium oxide film thus formed can be optionally used also in the production of other solar cells such as a solar cell whose i-type semiconductor layer comprising an amorphous silicon-germanium material, a solar cell having a pn junction structure comprising Si-Cu, In-Se, Ga-As, In-P, or the like, and a multi-cells stacked solar cell having a plurality of pin junction structures.

Example 9 In this example, as well as in the case of Example 8, there was prepared a solar cell (a photovoltaic element) by employing the electroless deposition film-forming method of the present invention. Particularly, the electroless deposition film-forming method was employed in the formation of a light incident side electrode layer in a solar cell (a photovoltaic element) formed on a glass -plate.

The solar cell was prepared in the following manner.

If Provision of substrate: 73 There was provided a 0.9 mm thick Corning No.

7059 glass plate (trade name) having a polished surface and which has been subjected to sensitizer-activator processing as a substrate.

Formation of light incident side electrode layer: The glass plate as the substrate was immersed in an aqueous solution containing 0.5 mol/l of indium nitrate and 0.01 mol/l of sodium potassium tartrate for 10 hours while maintaining said aqueous solution at 60 whereby ,r a.2 pm thick indium oxide film as a light incident side electrode layer (hereinafter referred to as upper electrode layer) was deposited on the polished surface of the glass plate as the substrate.

The indium oxide film thus formed as the upper o..o electrode layer was found to have a desirable lightscattering surface provided with minute irregularities.

This light-scattering surface of the indium oxide film as the upper electrode helps the incident light to so effectively scatter incident light as to pass into a Ssemiconductor layer formed on the upper electrode layer, wherein the optical path is prolonged to increase the number of photocarriers generated, resulting in an increase in the photoelectric conversion efficiency of a solar cell.

Formation of semiconductor active layer: On the surface of the upper electrode layer 74- (comprising the indium oxide film) except for its predetermined power outputting portion, there was formed a semiconductor active layer having a pin junction structure by sequentially forming a 220 A thick p-type semiconductor layer comprising a p-type amorphous silicon carbide (a-SiC) film, a 1800 A thick i-type semiconductor layer comprising an i-type amorphous silicon (a-Si) film, and a 200 A thick n-type semiconductor layer comprising an n-type amorphous silicon (a-Si) film by plasma CVD, where the p-type amorphous silicon carbide (a-SiC) film as the p-type semiconductor layer was formed using a gas mixture comprising SiH 4 gas, CH 4 gas, BF, gas and H, gas the itype amorphous silicon (a-Si) film as the i-type o** i semiconductor layer was formed using a gas mixture comprising SiH, gas and H, gas; and the n-type amorphous silicon (a-Si) film as the n-type semiconductor layer was formed using a gas mixture comprising SiH 4 gas, PH, gas and

H

2 gas.

Formation of back reflecting layer (back reflector): On the n-type semiconductor layer of the semiconductor active layer, there was formed a 5000 A 4 thick Al-film as a back reflecting layer by sputtering, where during the film formation of said Al-film by sputtering, irregularities were gradually 75 grown at the surface of the Al-film as the deposition of the Al-film on the n-type semiconductor layer proceeded.

The irregularities formed at the surface of the Al-film as the back reflecting layer were found to have an f average elevation of about 1 pm. This indicates that the back reflecting layer has a desirably irregular surface capable of sufficiently reflecting and scattering incident light.

Formation of a pair of power output terminals: 1' A lead as a power output connection was fixed to the power outputting portion of the upper electrode layer, and a lead as another power output connection was fixed to the back reflecting layer.

The element thus obtained was sealed using a sealing resin by a conventional resin-sealing manner into a module.

Thus, there was obtained a resin-sealed solar cell.

S. The resultant solar cell was evaluated as follows.

Using a conventional solar simulator, the solar cell was subjected to measurement with respect to I-V characteristics under pseudo sunlight having an intensity of 100 mW/cm 2 and a spectrum of AM 1.5. As a result, the solar cell was found to have a short-circuit current density of 14.5 mA/cm 2 an open-circuit voltage of 0.92 V, a fill Ir factor of 0.67, and a photoelectric conversion 76efficiency of 8.94%.

Further, in order to evaluate the transparency of the upper electrode layer comprising the indium oxide film, the collecting efficiency against the light having a r wavelength of 400 nm (that is, the Q400) was measured. As a result, it was found to be 58%.

These photoelectric conversion efficiency and collecting efficiency were foundto be the substantially the same as those of a solar cell formed on a glass 16 plate and having an upper electrode layer comprising a transparent and electrically conductive film formed by vacuum deposition or sputtering.

Hence, it is understood that the solar cell obtained in this example has satisfactory solar cell oC..

iY characteristics.

000* These facts indicates that the electroless deposition film-forming method of the present invention enables to effectively form a desirable indium oxide film C."having a sufficient conductivity and a sufficient o transparency, which can be effectively used as the oooe• transparent upper electrode layer of a solar cell.

Particularly, the solar cell whose upper electrode layer comprising the indium oxide film formed in accordance with the electroless deposition film-forming method of the Ls present invention exhibits a greater short-circuit 77 current density than that of the above described solar cell whose upper electrode layer comprising a transparent and electrically conductive film formed by vacuum deposition or sputtering. This indicates that the transparent upper Selectrode (on the light incident side) comprising the indium oxide film provided with desirable irregularities at the surface has an extremely effective behavior in terms of reflecting and scattering incident light.

Thus, it is understood that the electroless deposition film-forming method of the present invention enables to effectively form a high quality indium oxide film usable as a transparent and electrically conductive film in an semiconductor element, in a simple manner and at 0 a reasonable production cost.

OSOO

t And as previously described, the indium oxide film thus formed can be optionally used also in the production

OSO.

of other solar cells of the type that light is impinged from the substrate side, such as a solar cell whose i-type o semiconductor layer comprising an amorphous silicon- 1 germanium material, and a multi-cells stacked type solar cell having a plurality of pin junction structures.

Examnle *:see: [application of the electroless film-forming method in the production of an electrophotographic photosensitive 2S member] 78 In this example, there was prepared an electrophotographic photosensitive member having a photoconductive layer comprising a charge generation layer and a charge transportation layer in the following manner.

A cylindrical substrate made of aluminum and having an outer diameter of 30 mm and a length of 260 mm was subjected to acid cleaning by means of nitric acid.

The acid-cleaned surface of the cylindrical substrate was subjected to electroplating of Ni.

;0 The cylindrical substrate thus treated was immersed in an aqueous solution containing 0.05 mol/l of indium nitrate and 0.001 mol/l of sodium potassium tartrate for hours while maintaining the aqueous solution at 40 where a 10000 A thick indium oxide film was formed on the oooo if surface of the cylindrical substrate. The indium oxide film thus formed on the cylindrical substrate exhibits an ntype characteristic, and because of this, it functions as •ego .a blocking layer which prohibits a hole from being injected from the substrate side and prevents a hole, which to is generated in a charge generation layer formed thereon, from escaping to the substrate side. And this blocking layer stably exhibits blocking characteristics against environments. This situation makes the resulting electrophotographic light receiving member to have Il improved environmental characteristics.

79- Thereafter, the cylindrical substrate having the indium oxide film as the blocking layer thereon was subjected to dip-coating treatment using a dispersion comprising copper phthalocyanine (as a charge generation f material) dispersed in polyvinyl butyral, followed by drying, to form a 1 pm thick charge generation layer on the indium oxide film.

The resultant was subjected to dip-coating treatment using a coating liquid comprising carbazole (as la a. charge transportation material) dissolved in polycarbonate, followed by drying, to form a 10 pm thick charge transportation layer on the charge generation layer.

Thus, there was obtained a cylindrical electrophotographic photosensitive member.

i For the resultant electrophotographic photosensitive member, evaluation was conducted as will be described below.

The electrophotographic photosensitive member was set to a commercially available laser beam printer L o (produced by CANON Kabushiki Kaisha) which has been modified for experimental purposes, where its retained dark potential and light residual potential were measured under normal environmental condition with 25 °C/60%RH and high temperature and high humidity environmental condition with S- 35 °C/85%RH. And comparison was made of the measured results 80 in each case.

As a result, the "retained dark potential/ light residual potential" under the normal environmental condition was found to be 680 V/10 V, and that under the high temperature and high humidity environmental condition was found to be 670 V/12 V. These results indicate that the cylindrical electrophotographic photosensitive member obtained in this example is good enough in terms of the electrophotographic characteristics.

to In this example, as above described, the photocoductive layer was made to have a functionally divided two-layered structure comprising the charge generation layer and the charge transportation layer being stacked. But, this is not limitative. It is possible ir for the photoconductive layer to be designed to comprise a oeoo single-layered structure.

For the photosensitive charge generation material used in the charge generation layer, it is not restricted to copper phthalocyanine. Besides this, other pigments such S t as xylene pigment, perylene pigment, and azulenium salt pigment may be optionally used. For the charge transportation material used in the charge transportation layer, it is not restricted tocarbazole. Besides this, other compounds such as anthracene, pyrene, indole, and pyrazolone may be optionally used.

81 Examle 11 [application of the electroless deposition film-forming method in the formation of an undercoat layer] There was provided a non-alkaline glass plate [a C barium aluminum silicate glass plate: a Corning No. 7059 glass plate (trade name)] of 50 mm x 50 mm in size.

The rear face of this glass plate was covered by a masking tape, followed by subjecting its exposed surface to sensitizer-activator processing.

I The glass plate applied with the sensitizeractivator processing was immersed in an aqueous solution containing 0.05 mol/l of indium nitrate and 0.001 mol/l of sodium potassium tartrate for an hour while maintaining the aqueous solutioh at 40 C, where a 1000 A thick indium oxide i film was deposited on the exposed surface of the glass plate. The glass plate having the indium oxide film was subjected to annealing treatment at 150 IC for 2 hours.

The glass plate thus treated was positioned in an aqueous solution containing 0.01 mol/l of indium nitrate as a substrate and an indium counter electrode was also positioned in the aqueous solution. Then, an electric current of 10 mA was flown between the substrate and the counter electrode while maintaining the aqueous solution at 50 C where a 8000 -C thick indium oxide film was r- deposited uniformly over the previously formed indium 82 oxide film on the glass plate. This indium oxide film deposited was examined by means of SEM. As a result, it was found to comprise indium oxide crystal particles of about jim in average dimension.

SThus, it is understood that an indium oxide member produced in accordance with the electroless deposition film-forming method can be used as a substrate for electro plating.

Now, in the case where such an under coat layer for electroplating is formed in accordance with the electroless deposition film-forming method of the present invention, evenwhena layer formed thereon comprises the same material (that is, indium oxide) as the constituent (indium oxide) of the under coat, the constituent particles i? can be properly controlled with respect to their dimension and orientation. This situation more widens the extent of indium oxide to be utilized.

As apparent from the above description, the present invention enables to effectively form a high quality 1o indium oxide film having a uniform thickness and a uniform property on a large area substrate at a low film-forming temperature, at a high speed (a high deposition rate) and at a reasonable production cost, without using a large scale apparatus including a vacuum apparatus, a heating if apparatus, and the like. Particularly, the present invention 83 enables to efficiently produce a desirable photovoltaic element (a solar cell) having an improved photoelectric conversion efficiency at a reasonable production cost.

84

Claims (14)

1. A film-forming method for forming an indium oxide film on an electrically conductive substrate, comprising the steps of: immersing said substrate and a counter electrode in an aqueous solution containing at least nitrate ion and indium ion and flowing an electric current between said substrate and said counter electrode, whereby causing the formation of said indium oxide film on said substrate.

2. A film-forming method according to claim 1, wherein the nitrate ion is supplied from a compound selected from the group consisting of indium nitrate, magnesium nitrate, aluminum nitrate, sodium nitrate and potassiinm nitrate. a.

3. A film-forming method according to claim 1, wherein the indium ion is supplied from a compound'selected from the group consisting of indium nitrate, indium chloride, indium sulfate, and indium hydroxide.

4. A film-forming method according to claim 1, wherein the aqueous solution includes a solution obtained i by dissolving an indium material in nitric acid.

5. A film-forming method according to claim 1, wherein the aqueous solution is maintained at a temperature in the range of 20 to 60 °C upon the film formation. 85

6. A film-forming method according to claim i, wherein the counter electrode is insoluble in the aqueous solution.

7. A film-forming method according to claim i, wherein the aqueous solution contains a carbohydrate.

8. A film-forming method according to claim i, wherein the electrically conductive substrate comprises a member selected from the group consisting of a stainless steel plate, a steel plate, a copper plate, a brass plate, and an aluminum plate.

9. A film-forming method according to claim i, wherein the electrically conductive substrate comprises a combination comprising a substrate and a metal layer formed on the surface of said substrate.

10. A film-forming method according to claim 9, wherein the substrate is constituted by a glass, a ceramic, or a synthetic resin.

11. A film-forming method according to claim i, wherein the electrically conductive substrate has a metal layer formed thereon.

12. A film-forming method according to claim 9 or 11, wherein the metal layer is constituted by a metal selected from the group consisting of Au, Ag, Cu, and Al.

13. A film-forming method according to claim 1, wherein the electrically conductive substrate is shaped in a sheet form, a plate form, or a roll form.

86- 14. A film-forming method according to claim 7, wherein the carbohydrate comprises at least a material selected from the group consisting of sucrose, dextrin, glucose, maltose, fructose, galactose, lactose, glycogen, and inulin. A substrate for a semiconductor element, comprising an electrically conductive substrate as a substrate for a semiconductor element, said electrically conductive substrate having an indium oxide film formed thereon by immersing said electrically conductive substrate and a counter electrode in an aqueous solution containing at least nitrate ion and indium ion and flowing an electric current between said substrate and said counter electrode. oooo 16. A substrate for a semiconductor element according to claim 15, wherein the nitrate ion is supplied from a compound selected from the group consisting of indium nitrate, magnesium nitrate, aluminum nitrate, sodium nitrate and potassium nitrate. 17. A substrate for a semiconductor element ooo i Saccording to claim 15, wherein the indium ion is supplied from a compound selected from the group consisting of indium :nitrate, indium chloride, indium sulfate, and indium hydroxide. 18. A substrate for a semiconductor element 87 according to claim 15, wherein the aqueous solution includes a solution obtained by dissolving an indium material in nitric acid. 19. A substrate for a semiconductor element according to claim 15, wherein the aqueous solution is maintained at a temperature in the range of 20 to 60 00 upon the film formation. A substrate for a semiconductor element according to claim 15, wherein the counter electrode is insoluble in the aqueous solution. 21. A substrate for a semiconductor element according to claim 15, wherein the aqueous solution contains carbohydrate. 22. A substrate for a semiconductor element ooo *according to claim 15, wherein the electrically conductive substrate comprises a member selected from the group consisting of a stainless steel plate, a steel plate, a copper plate, a brass plate, and an aluminum plate. 23. A substrate for a semiconductor element according to claim 15, wherein the electrically conductive .oo.oi S"substrate comprises a combination comprising a substrate and a metal layer formed on the surface of said substrate. 24. A substrate for a semiconductor element according to claim 23, wherein the substrate is constituted by a glass, a ceramic, or a synthetic resin. 88 A substrate for a semiconductor element according to claim 15, wherein the electrically conductive substrate has a metal layer formed thereon. 26. A substrate for a semiconductor element according to claim 23 or 25, wherein the metal layer is constituted by a metal selected from the group consisting of Au, Ag, Cu, and Al. 27. A substrate for a semiconductor element according to claim 15, wherein the electrically conductive substrate is shaped in a sheet form, a plate form, or a roll form. 28. A substrate for a semiconductor element according to claim 21, wherein the carbohydrate comprises at least a material selected from the group consisting of *oo* sucrose, dextrin, glucose, maltose, fructose, galactose, .ooooi liactose, glycogen, and inulin. 29. A photovoltaic element comprising at least a first transparent and electrically conductive layer, a .o semiconductor layer and a second transparent and electrically conductive layer stacked in this order on an .ooooi Selectrically conductive substrate, wherein at least one of the first and second transparent and electrically conductive layers comprises an indium oxide film formed by immersing said electrically conductive substrate and a counter electrode in an aqueous solution containing at 89 least nitrate ion and indium ion and flowing an electric current between said substrate and said counter electrode. A photovoltaic element according to claim 29, wherein the nitrate ion is supplied from a compound selected from the group consisting of indium nitrate, magnesium nitrate, aluminum nitrate, sodium nitrate and potassium nitrate. 31. A photovoltaic element according to claim 29, wherein the indium ion is supplied from a compound selected from the group consisting of indium nitrate, indium chloride, indium sulfate, and indium hydroxide. 32. A photovoltaic element according to claim 29, wherein the aqueous solution includes a solution obtained by dissolving an indium metal or an indium alloy in nitric acid. 33. A photovoltaic element according to claim 29, wherein the aqueous solution is maintained at a temperature in the range of 20 to 60 C upon the film formation. 34. A photovoltaic element according to claim 29, 'i wherein the counter electrode is insoluble in the aqueous .:oooi solution. 35. A photovoltaic element according to claim 29, wherein the aqueous solution contains a carbohydrate. 36. A photovoltaic element according to claim 29, wherein the electrically conductive substrate comprises a 91 member selected from the group consisting of a stainless steel plate, a steel plate, a copper plate, a brass plate, and an aluminum plate. 37. A photovoltaic element according to claim 29, wherein the electrically conductive substrate comprises a substrate having a metal layer formed on a surface s thereof. 38. A photovoltaic element according to claim 37, wherein the substrate is constituted by a glass, a ceramic, or a synthetic resin. 39. A photovoltaic element according to claim 29, wherein the electrically conductive substrate has a metal layer formed thereon. to 40. A photovoltaic element according to-claim 37 or 39, wherein the metal layer is constituted by a metal selected from the group consisting of Au, Ag, Cu, and Al. 41. A photovoltaic element according to claim 29, wherein the electrically conductive substrate is shaped in a sheet form, a plate form, or a roll form. 42. A photovoltaic element according to claim 35, wherein the hydrocarbon 15 comprises at least a material selected from the group consisting of sucrose, dextrin, S-glucose, maltose, fructose, galactose, lactose, glycogen, and inulin. 43. An aqueous solution for the formation of an indium oxide film by electroless deposition, said aqueous solution containing at least nitrate ion at a concentration of 0.001 to 0.5 mol/l, indium ion at a concentration of 0.001 to 0.5 mol/l1, and tartrate at a 20 concentration of 0.00001 to 0.1 molIl. 44. An aqueous solution according to claim 43, wherein the tartrate comprises sodium tartrate or sodium potassium tartrate. o. 45. An aqueous solution according to claim 43, wherein the concentration of the tartrate is 1/2 to 1/5 of that of the indium ion. 25 46. An aqueous solution according to claim 43, wherein the nitrate ion and indium ion are based on an ion supply source comprising indium nitrate contained in the aqueous solution. 47., An aqueous solution according to claim 46, wherein the indium nitrate has a concentration of0,001 to 0.5-mol/1 in the aqueous solution. 48. A film-forming method for forming an indium oxide film on a substrate by electroless deposition process, said film-forming method comprising the steps of: immersing said substrate in an aqueous solution containing at least nitrate ion, indium ion and tartrate and treating said substrate by said aqueous solution maintained a temperature of 10 to 60 to deposit said indium oxide film on said substrate. [R:\LXX]03245.do,:a.k 92 49. A film-forming method according to claim 48, wherein the tartrate comprises sodium tartrate or sodium potassium tartrate. A film-forming method according to claim 48, wherein the aqueous solution contains the nitrate ion at a concentration of 0.001 to 0.5 moll. 51. A film-forming method according to claim 48, wherein the aqueous solution contains the indium ion at a concentration of 0.001 to 0.5 mol/1. 52. A film-forming method according to claim 48, wherein the aqueous solution contains the tartrate at a concentration of 0.00001 to 0.1 mol1. 53. A film-forming method according to claim 48, wherein the concentration of 1o the tartrate in the aqueous solution is 1/200 to 1/5 of that of the indium ion in the aqueous solution. 54. A film-forming method to claim 48, wherein the nitrate ion and indium ion are based on an ion supply source comprising indium nitrate contained in the aqueous solution. 1: 5 55. A film-forming method according to claim 54, wherein the indium nitrate has S;a concentration of 0.001 to 0.5 mol1 in the aqueous solution. ~56. A substrate for a semiconductor element, having an indium oxide film on a surface of said substrate, said indium oxide film being formed by a film-forming method by electroless deposition process, said film-forming method comprising the steps of: 20 immersing said substrate in an aqueous solution containing at least nitrate ion, indium ion and tartrate and treating said substrate by said aqueous solution maintained a temperature S. of 10 to 60 whereby depositing said indium oxide film on said substrate. S: 57. A substrate for a semiconductor element according to claim 56, wherein the i tartrate comprises sodium tartrate or sodium potassium tartrate. 58. A photovoltaic element comprising at least a first transparent and electrically conductive layer, a semiconductor layer and a second transparent and electrically conductive layer stacked in this order on a substrate, wherein at least one of the first and second transparent and electrically conductive layers comprises an indium oxide :film formed by immersing said substrate in an aqueous solution containing- at least. nitrate ion,- indium ion and tartrate and treating said substrate by said aqueous solution maintained at a temperature of 10 to 60 0 C, thereby depositing said indium oxide film on said substrate. 59. A photovoltaic element according to claim 58, wherein the tartrate comprises sodium tartrate or sodium potassium tartrate. [R\LIBXX]03245.doc:aak 93 A film-forming method for forming an indium oxide film on an electrically conductive substrate, substantially as hereinbefore described with reference to any one of the Examples. 61. A substrate for a semiconductor element, comprising an electrically conductive substrate as a substrate for a semiconductor element, said electrically conductive substrate having an indium oxide film formed thereon, substantially as hereinbefore described with reference to any one of the Examples. 62. A photovoltaic element comprising at least a first transparent and electrically conductive layer, a semiconductor layer and a second transparent and electrically conductive layer stacked in this order on an electrically conductive substrate, wherein at least one of the first and second transparent and electrically conductive layers comprises an indium oxide film, substantially as hereinbefore described with reference to any one of the Examples. 63. An aqueous solution for the formation of an indium oxide film by electroless 5is deposition process, substantially as hereinbefore described with reference to any one of oe o 'the Examples. 64. A substrate for a semiconductor element, having an indium oxide film on a surface of said substrate, substantially as hereinbefore described with reference to any one of the Examples *0 0: 20 65. A film-forming method according to claim 1, wherein the aqueous solution :o includes a solution obtained by dissolving an indium metal or an indium alloy in nitric acid. S.r: 66. A film-forming method according to claim 1, wherein the electrically 0: conductive substrate comprises a substrate having a metal layer formed a surface thereof. 25 67. A substrate for a semiconductor element according to claim 15, wherein the aqueous solution includes a solution obtained by dissolving an indium metal or an indium alloy in nitric acid. 68. A substrate for a semiconductor element according to claim 15, wherein the electrically conductive substrate comprises a substrate having a metal layer formed a surface thereof. Dated 27 March, 2002 Canon Kabushiki Kaisha Patent Attorneys for the Applicant/Nominated Person SPRUSON FERGUSON [R:\LIBXX]03245.doc:aak