AU7304198A - Electron beam pumped semiconductor laser screen and method of forming - Google Patents

Electron beam pumped semiconductor laser screen and method of forming

Info

Publication number
AU7304198A
AU7304198A AU73041/98A AU7304198A AU7304198A AU 7304198 A AU7304198 A AU 7304198A AU 73041/98 A AU73041/98 A AU 73041/98A AU 7304198 A AU7304198 A AU 7304198A AU 7304198 A AU7304198 A AU 7304198A
Authority
AU
Australia
Prior art keywords
forming
electron beam
semiconductor laser
pumped semiconductor
laser screen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU73041/98A
Inventor
Robert Rex Rice
Neil Francis Ruggeiri
John Stanley Whiteley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
McDonnell Douglas Corp
Original Assignee
McDonnell Douglas Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by McDonnell Douglas Corp filed Critical McDonnell Douglas Corp
Publication of AU7304198A publication Critical patent/AU7304198A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/0955—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
    • H01S3/0959—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU73041/98A 1996-11-19 1997-11-18 Electron beam pumped semiconductor laser screen and method of forming Abandoned AU7304198A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US75205796A 1996-11-19 1996-11-19
US08/752057 1996-11-19
PCT/US1997/021241 WO1998022998A1 (en) 1996-11-19 1997-11-18 Electron beam pumped semiconductor laser screen and method of forming

Publications (1)

Publication Number Publication Date
AU7304198A true AU7304198A (en) 1998-06-10

Family

ID=25024664

Family Applications (1)

Application Number Title Priority Date Filing Date
AU73041/98A Abandoned AU7304198A (en) 1996-11-19 1997-11-18 Electron beam pumped semiconductor laser screen and method of forming

Country Status (2)

Country Link
AU (1) AU7304198A (en)
WO (1) WO1998022998A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6556602B2 (en) * 2000-12-05 2003-04-29 The Boeing Company Electron beam pumped semiconductor laser screen and associated fabrication method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539687A (en) * 1982-12-27 1985-09-03 At&T Bell Laboratories Semiconductor laser CRT
US4881236A (en) * 1988-04-22 1989-11-14 University Of New Mexico Wavelength-resonant surface-emitting semiconductor laser
US5131002A (en) * 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
RU2064206C1 (en) * 1991-12-26 1996-07-20 Физический институт им.П.Н.Лебедева РАН Laser screen for cathode-ray tube and method for its manufacturing
US5317583A (en) * 1991-12-26 1994-05-31 Principia Optics Incorporated Semiconductor laser screen of a cathode-ray tube
FR2690286A1 (en) * 1992-04-17 1993-10-22 Commissariat Energie Atomique Laser cavity with asymmetrical semi-conductor heterostructure and laser equipped with this cavity.
RU2056665C1 (en) * 1992-12-28 1996-03-20 Научно-производственное объединение "Принсипиа оптикс" Laser cathode-ray tube
US5416044A (en) * 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5677923A (en) * 1996-01-11 1997-10-14 Mcdonnell Douglas Corporation Vertical cavity electron beam pumped semiconductor lasers and methods

Also Published As

Publication number Publication date
WO1998022998A1 (en) 1998-05-28

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