AU6386101A - Wavelength-selective pn transition photodiode - Google Patents

Wavelength-selective pn transition photodiode

Info

Publication number
AU6386101A
AU6386101A AU63861/01A AU6386101A AU6386101A AU 6386101 A AU6386101 A AU 6386101A AU 63861/01 A AU63861/01 A AU 63861/01A AU 6386101 A AU6386101 A AU 6386101A AU 6386101 A AU6386101 A AU 6386101A
Authority
AU
Australia
Prior art keywords
photodiode
selective
wavelength
transition
transition photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU63861/01A
Inventor
Michael Humeniuk
Bernd Kloth
Hartwin Obernik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EPIGAP OPTOELEKTRONIK GmbH
Original Assignee
EPIGAP OPTOELEKTRONIK GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EPIGAP OPTOELEKTRONIK GmbH filed Critical EPIGAP OPTOELEKTRONIK GmbH
Publication of AU6386101A publication Critical patent/AU6386101A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
AU63861/01A 2000-04-12 2001-04-12 Wavelength-selective pn transition photodiode Abandoned AU6386101A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2000119089 DE10019089C1 (en) 2000-04-12 2000-04-12 Wavelength selective pn junction photodiode
DE10019089 2000-04-12
PCT/EP2001/004287 WO2001078155A2 (en) 2000-04-12 2001-04-12 Wavelength-selective pn transition photodiode

Publications (1)

Publication Number Publication Date
AU6386101A true AU6386101A (en) 2001-10-23

Family

ID=7639109

Family Applications (1)

Application Number Title Priority Date Filing Date
AU63861/01A Abandoned AU6386101A (en) 2000-04-12 2001-04-12 Wavelength-selective pn transition photodiode

Country Status (3)

Country Link
AU (1) AU6386101A (en)
DE (1) DE10019089C1 (en)
WO (1) WO2001078155A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10228309A1 (en) * 2002-06-25 2004-01-22 Sick Ag Light sensor colour receiver for area monitoring has semiconductor photo diode surfaces arranged adjacent or along path at receive pupil with unfocussed or collimated objective
DE10341086B4 (en) * 2003-07-31 2007-06-06 Osram Opto Semiconductors Gmbh Radiation-receiving semiconductor body with a filter layer
TWI250659B (en) 2003-07-31 2006-03-01 Osram Opto Semiconductors Gmbh Radiation-receiving semiconductor-body with an integrated filter-layer
DE102008030750A1 (en) * 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Radiation detector, has passive area formed along side surfaces for controlling addition of radiations irradiated laterally in direction of active area for producing signal of radiation detector in active area of semiconductor body

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US3506830A (en) * 1968-02-26 1970-04-14 Us Air Force Narrow spectral responsive p-n junction photodiode
DE2646424A1 (en) * 1976-10-14 1978-04-20 Siemens Ag FILTER FOR PHOTODETECTORS
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode
JPS5575273A (en) * 1978-12-04 1980-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light detecting device
DD143839A1 (en) * 1979-07-03 1980-09-10 Friedhelm Banse RADIATION-SENSITIVE SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
DD158198A3 (en) * 1980-03-31 1983-01-05 Hubert Pohlack PHOTODIODE
GB2078440B (en) * 1980-03-31 1984-04-18 Nippon Telegraph & Telephone An optoelectronic switch
SE8103798L (en) * 1981-06-17 1982-12-18 Asea Ab SPECTRAL ANALYSIS PHOTODIOD
SE8106453L (en) * 1981-11-02 1983-05-03 Asea Ab PHOTODIOD STRUCTURE WITH T tailored SPECTRAL SENSITIVITY
DE3205461C2 (en) * 1982-02-16 1986-06-26 Siemens AG, 1000 Berlin und 8000 München Semiconductor photodiode
SU1123069A1 (en) * 1982-09-03 1984-11-07 Казахский Ордена Трудового Красного Знамени Государственный Университет Им.С.М.Кирова Photodetector for visible light region
DD230633A3 (en) * 1983-06-22 1985-12-04 Aldo Bojarski METHOD FOR MEASURING THE SPECTRAL POWER DISTRIBUTION OF RADIATION SOURCES
DD292771A5 (en) * 1986-05-05 1991-08-08 Carl Zeiss Jena,De SEMICONDUCTOR HISTORY SENSOR FOR SPECTRAL ANALYSIS
DE3736203A1 (en) * 1987-10-26 1989-05-03 Siemens Ag Method for operating a spectrometer diode
CH684971A5 (en) * 1989-03-16 1995-02-15 Landis & Gyr Tech Innovat Ultraviolet light sensor.
JP2661412B2 (en) * 1991-06-25 1997-10-08 日立電線株式会社 Light receiving element
JP2833438B2 (en) * 1993-09-17 1998-12-09 日立電線株式会社 Single wavelength photo detector
JP3734939B2 (en) * 1997-09-03 2006-01-11 住友電気工業株式会社 Light receiving element and light receiving element module

Also Published As

Publication number Publication date
WO2001078155A2 (en) 2001-10-18
DE10019089C1 (en) 2001-11-22
WO2001078155A3 (en) 2002-03-14

Similar Documents

Publication Publication Date Title
AU2001279018A1 (en) Towelette packaging
AU2001232022A1 (en) Optoelectronic devices
AU3604401A (en) Photoelectric device
AU2023301A (en) Improved prosthesis
AU2001231682A1 (en) Surfactant combination
AU2001246878A1 (en) Semiconductor photodetector
AU2001270792A1 (en) Surfactant
AU2002354080A1 (en) Photodiode
AU6594401A (en) 6-heterocyclyl-3-oxo-3,4-dihydro-quinoxalines
AU2002212914A1 (en) Autofocusing
AU6386101A (en) Wavelength-selective pn transition photodiode
AU2001235899A1 (en) Implantation
AU2002227520A1 (en) Improved semiconductor laser
AU2001282644A1 (en) Case
AU2001277975A1 (en) Fabricated chip
AU2001247588A1 (en) Improved thermal-electrically cooled photodetector
AU4435701A (en) Automatically adjusting clutches
AU2002216451A1 (en) Thermal footwear
AU4859301A (en) Antihistaminic compounds
AU2001283459A1 (en) Solid state laser
AU2001252881A1 (en) Wavelength-selective module
AU6762801A (en) Power microjack
AU2001280919A1 (en) Wavelength-selective demultiplexer
AU2002221153A1 (en) Boiler
AU2002223807A1 (en) Laser devices

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase