AU5152200A - Methods for wet processing electronic components having copper containing surfaces - Google Patents

Methods for wet processing electronic components having copper containing surfaces

Info

Publication number
AU5152200A
AU5152200A AU51522/00A AU5152200A AU5152200A AU 5152200 A AU5152200 A AU 5152200A AU 51522/00 A AU51522/00 A AU 51522/00A AU 5152200 A AU5152200 A AU 5152200A AU 5152200 A AU5152200 A AU 5152200A
Authority
AU
Australia
Prior art keywords
methods
electronic components
wet processing
copper containing
processing electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU51522/00A
Inventor
Steven Verhaverbeke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CFMT Inc
Original Assignee
CFMT Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CFMT Inc filed Critical CFMT Inc
Publication of AU5152200A publication Critical patent/AU5152200A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
AU51522/00A 1999-05-21 2000-05-19 Methods for wet processing electronic components having copper containing surfaces Abandoned AU5152200A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13526799P 1999-05-21 1999-05-21
US60135267 1999-05-21
PCT/US2000/014019 WO2000071782A1 (en) 1999-05-21 2000-05-19 Methods for wet processing electronic components having copper containing surfaces

Publications (1)

Publication Number Publication Date
AU5152200A true AU5152200A (en) 2000-12-12

Family

ID=22467309

Family Applications (1)

Application Number Title Priority Date Filing Date
AU51522/00A Abandoned AU5152200A (en) 1999-05-21 2000-05-19 Methods for wet processing electronic components having copper containing surfaces

Country Status (7)

Country Link
EP (1) EP1198620A4 (en)
JP (1) JP2003500537A (en)
KR (1) KR20020030742A (en)
CN (1) CN1352703A (en)
AU (1) AU5152200A (en)
TW (1) TW466728B (en)
WO (1) WO2000071782A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020072595A (en) * 2001-03-12 2002-09-18 (주)에스티디 Oxidization film formation method for copper board and copper board thereby
AU2006340825A1 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
JP4973231B2 (en) * 2006-09-05 2012-07-11 日立化成工業株式会社 Copper etching method and wiring board and semiconductor package using this method
CN105802747B (en) * 2016-04-15 2018-11-09 林淑录 The cleaning agent of cleaning after a kind of solar-energy photo-voltaic cell silicon wafer wool making
US10982335B2 (en) * 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
CN115558931B (en) * 2022-10-26 2023-07-04 广东华智芯电子科技有限公司 Refining method of copper surface crystal flower, corrosive liquid combination and application thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526853B2 (en) * 1972-12-22 1977-02-25
US4586961A (en) * 1985-02-15 1986-05-06 Halliburton Company Methods and compositions for removing copper and copper oxides from surfaces
JP2909743B2 (en) * 1989-03-08 1999-06-23 富山日本電気株式会社 Chemical polishing method for copper or copper alloy
JP3154814B2 (en) * 1991-06-28 2001-04-09 株式会社東芝 Semiconductor wafer cleaning method and cleaning apparatus
JPH06318584A (en) * 1993-05-10 1994-11-15 Kawasaki Steel Corp Cleaning method and drying method after cleaning for wafer with cu wiring formed
JP3338134B2 (en) * 1993-08-02 2002-10-28 株式会社東芝 Semiconductor wafer processing method
JP3226144B2 (en) * 1994-07-01 2001-11-05 三菱マテリアルシリコン株式会社 Silicon wafer cleaning method
US5855805A (en) * 1996-08-08 1999-01-05 Fmc Corporation Microetching and cleaning of printed wiring boards
KR100234541B1 (en) * 1997-03-07 1999-12-15 윤종용 Cleaning solution and cleaning method for semiconductor process

Also Published As

Publication number Publication date
EP1198620A4 (en) 2004-12-22
JP2003500537A (en) 2003-01-07
KR20020030742A (en) 2002-04-25
EP1198620A1 (en) 2002-04-24
WO2000071782A1 (en) 2000-11-30
CN1352703A (en) 2002-06-05
TW466728B (en) 2001-12-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase