Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
  • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
  • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
  • H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
  • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/617—Combinations of vertical BJTs and only diodes

Applications Claiming Priority (2)

Publications (2)

Family

ID=9173721

Family Applications (1)

Country Status (13)

Families Citing this family (3)

Family Cites Families (3)

• 1976
  • 1976-05-21 FR FR7616128A patent/FR2352448A1/fr active Granted
• 1977
  • 1977-03-17 BE BE175881A patent/BE852581A/xx not_active IP Right Cessation
  • 1977-03-28 CH CH387877A patent/CH619086A5/de not_active IP Right Cessation
  • 1977-03-29 NL NL7703355A patent/NL7703355A/xx not_active Application Discontinuation
  • 1977-04-15 US US05/788,094 patent/US4096400A/en not_active Expired - Lifetime
  • 1977-04-20 GB GB16397/77A patent/GB1569932A/en not_active Expired
  • 1977-04-21 ES ES458065A patent/ES458065A1/es not_active Expired
  • 1977-04-21 IT IT22685/77A patent/IT1125738B/it active
  • 1977-05-06 SE SE7705282A patent/SE421161B/xx not_active IP Right Cessation
  • 1977-05-10 JP JP52052742A patent/JPS5915215B2/ja not_active Expired
  • 1977-05-13 BR BR3119/77A patent/BR7703119A/pt unknown
  • 1977-05-17 DE DE2722248A patent/DE2722248C3/de not_active Expired
  • 1977-05-20 AU AU25345/77A patent/AU508027B2/en not_active Expired

Also Published As

Similar Documents