AU4843593A - Coincident activation of pass transistors in a random access memory - Google Patents

Coincident activation of pass transistors in a random access memory

Info

Publication number
AU4843593A
AU4843593A AU48435/93A AU4843593A AU4843593A AU 4843593 A AU4843593 A AU 4843593A AU 48435/93 A AU48435/93 A AU 48435/93A AU 4843593 A AU4843593 A AU 4843593A AU 4843593 A AU4843593 A AU 4843593A
Authority
AU
Australia
Prior art keywords
random access
access memory
pass transistors
coincident
activation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU48435/93A
Other languages
English (en)
Inventor
Albert W. Vinal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thunderbird Technologies Inc
Original Assignee
Thunderbird Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thunderbird Technologies Inc filed Critical Thunderbird Technologies Inc
Publication of AU4843593A publication Critical patent/AU4843593A/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
AU48435/93A 1992-09-03 1993-08-30 Coincident activation of pass transistors in a random access memory Abandoned AU4843593A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US94029992A 1992-09-03 1992-09-03
US940299 1992-09-03
PCT/US1993/008232 WO1994006120A1 (fr) 1992-09-03 1993-08-30 Activation coincidente de transistors de passe dans une memoire a acces selectif

Publications (1)

Publication Number Publication Date
AU4843593A true AU4843593A (en) 1994-03-29

Family

ID=25474589

Family Applications (1)

Application Number Title Priority Date Filing Date
AU48435/93A Abandoned AU4843593A (en) 1992-09-03 1993-08-30 Coincident activation of pass transistors in a random access memory

Country Status (6)

Country Link
EP (1) EP0662235A1 (fr)
JP (1) JPH08501179A (fr)
KR (1) KR950703197A (fr)
AU (1) AU4843593A (fr)
CA (1) CA2141860A1 (fr)
WO (1) WO1994006120A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619447A (en) * 1995-05-02 1997-04-08 Motorola, Inc. Ferro-electric memory array architecture and method for forming the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638202A (en) * 1970-03-19 1972-01-25 Bell Telephone Labor Inc Access circuit arrangement for equalized loading in integrated circuit arrays
US3629612A (en) * 1970-09-18 1971-12-21 Rca Corp Operation of field-effect transistor circuit having substantial distributed capacitance
US3893087A (en) * 1974-02-08 1975-07-01 Gen Instrument Corp Random access memory with shared column conductors
US5163022A (en) * 1989-01-23 1992-11-10 Hitachi, Ltd. Semiconductor cell memory with current sensing
JPH03259495A (ja) * 1990-03-07 1991-11-19 Matsushita Electric Ind Co Ltd スタティックram

Also Published As

Publication number Publication date
CA2141860A1 (fr) 1994-03-17
WO1994006120A1 (fr) 1994-03-17
JPH08501179A (ja) 1996-02-06
EP0662235A1 (fr) 1995-07-12
KR950703197A (ko) 1995-08-23

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