AU463787B2 - High frequency planar transistor employing highly resistive guard ring - Google Patents

High frequency planar transistor employing highly resistive guard ring

Info

Publication number
AU463787B2
AU463787B2 AU33790/71A AU3379071A AU463787B2 AU 463787 B2 AU463787 B2 AU 463787B2 AU 33790/71 A AU33790/71 A AU 33790/71A AU 3379071 A AU3379071 A AU 3379071A AU 463787 B2 AU463787 B2 AU 463787B2
Authority
AU
Australia
Prior art keywords
high frequency
guard ring
planar transistor
highly resistive
frequency planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU33790/71A
Other languages
English (en)
Other versions
AU3379071A (en
Inventor
JOSEPH HANNAM and JOHN AARON OLMSTEAD PETER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of AU3379071A publication Critical patent/AU3379071A/en
Application granted granted Critical
Publication of AU463787B2 publication Critical patent/AU463787B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
AU33790/71A 1970-12-23 1971-09-22 High frequency planar transistor employing highly resistive guard ring Expired AU463787B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10100170A 1970-12-23 1970-12-23
USUS101001 1970-12-23

Publications (2)

Publication Number Publication Date
AU3379071A AU3379071A (en) 1973-03-29
AU463787B2 true AU463787B2 (en) 1975-08-07

Family

ID=22282615

Family Applications (1)

Application Number Title Priority Date Filing Date
AU33790/71A Expired AU463787B2 (en) 1970-12-23 1971-09-22 High frequency planar transistor employing highly resistive guard ring

Country Status (8)

Country Link
AU (1) AU463787B2 (enExample)
BE (1) BE772640A (enExample)
CA (1) CA932072A (enExample)
DE (1) DE2147009A1 (enExample)
FR (1) FR2118889B1 (enExample)
GB (1) GB1362852A (enExample)
NL (1) NL7111842A (enExample)
SE (1) SE376688B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153495A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices

Also Published As

Publication number Publication date
CA932072A (en) 1973-08-14
SE376688B (enExample) 1975-06-02
FR2118889B1 (enExample) 1977-04-22
FR2118889A1 (enExample) 1972-08-04
DE2147009A1 (de) 1972-07-13
GB1362852A (en) 1974-08-07
AU3379071A (en) 1973-03-29
BE772640A (fr) 1972-01-17
NL7111842A (enExample) 1972-06-27

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