AU3877599A - Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber - Google Patents
Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorberInfo
- Publication number
- AU3877599A AU3877599A AU38775/99A AU3877599A AU3877599A AU 3877599 A AU3877599 A AU 3877599A AU 38775/99 A AU38775/99 A AU 38775/99A AU 3877599 A AU3877599 A AU 3877599A AU 3877599 A AU3877599 A AU 3877599A
- Authority
- AU
- Australia
- Prior art keywords
- vertical
- emitting laser
- cavity surface
- optical absorber
- well optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/026—Optical bistable devices based on laser effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0658—Self-pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18316—Airgap confined
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18325—Between active layer and substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09071653 | 1998-05-01 | ||
US09/071,653 US6026108A (en) | 1996-10-16 | 1998-05-01 | Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber |
PCT/US1999/009607 WO1999057789A1 (en) | 1998-05-01 | 1999-04-30 | Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber |
Publications (1)
Publication Number | Publication Date |
---|---|
AU3877599A true AU3877599A (en) | 1999-11-23 |
Family
ID=22102723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU38775/99A Abandoned AU3877599A (en) | 1998-05-01 | 1999-04-30 | Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber |
Country Status (6)
Country | Link |
---|---|
US (1) | US6026108A (en) |
EP (1) | EP1075718A4 (en) |
JP (1) | JP2002514016A (en) |
AU (1) | AU3877599A (en) |
CA (1) | CA2330537A1 (en) |
WO (1) | WO1999057789A1 (en) |
Families Citing this family (57)
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US6327293B1 (en) * | 1998-08-12 | 2001-12-04 | Coherent, Inc. | Optically-pumped external-mirror vertical-cavity semiconductor-laser |
JP4441014B2 (en) * | 1999-07-26 | 2010-03-31 | 富士ゼロックス株式会社 | Photoelectric conversion element for wireless communication |
US6624000B1 (en) * | 1999-09-02 | 2003-09-23 | Agility Communications, Inc. | Method for making a monolithic wavelength converter assembly |
US6577658B1 (en) * | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
US6555407B1 (en) * | 1999-10-26 | 2003-04-29 | Zarlink Semiconductor Ab | Method for the controlled oxidiation of materials |
WO2001031756A1 (en) | 1999-10-29 | 2001-05-03 | E20 Communications, Inc. | Modulated integrated optically pumped vertical cavity surface emitting lasers |
US6424669B1 (en) | 1999-10-29 | 2002-07-23 | E20 Communications, Inc. | Integrated optically pumped vertical cavity surface emitting laser |
KR100317988B1 (en) * | 1999-12-20 | 2001-12-24 | 오길록 | Method for fabricating multi-channel array optical device |
DE10004398A1 (en) * | 2000-02-02 | 2001-08-16 | Infineon Technologies Ag | VCSEL with monolithically integrated photodetector |
EP1126739A1 (en) * | 2000-02-15 | 2001-08-22 | Lucent Technologies Inc. | Method of and arrangement for buffering digital optical signals |
US6643305B2 (en) | 2000-04-07 | 2003-11-04 | The United States Of America As Represented By The Secretary Of The Navy | Optical pumping injection cavity for optically pumped devices |
KR100708081B1 (en) * | 2000-05-18 | 2007-04-16 | 삼성전자주식회사 | Apparatus and method for manufacturing oxide aperture of VCSEL |
NL1015714C2 (en) * | 2000-07-14 | 2002-01-15 | Dsm Nv | Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropanoic acid. |
US6678301B1 (en) * | 2000-07-14 | 2004-01-13 | Triquint Technology Holding Co. | Apparatus and method for minimizing wavelength chirp of laser devices |
US6445021B1 (en) * | 2000-09-20 | 2002-09-03 | International Business Machines Corporation | Negative differential resistance reoxidized nitride silicon-based photodiode and method |
US6674785B2 (en) * | 2000-09-21 | 2004-01-06 | Ricoh Company, Ltd. | Vertical-cavity, surface-emission type laser diode and fabrication process thereof |
DE10102458A1 (en) * | 2001-01-15 | 2002-07-25 | Infineon Technologies Ag | Laser diode for scanning media has fading absorber means for irradiating a vertical resonator and absorber material integrated into a sequence of layers. |
US20020163952A1 (en) * | 2001-03-01 | 2002-11-07 | Wen-Yen Hwang | VCSEL with single lasing-reflectivity peak reflector |
US6556610B1 (en) | 2001-04-12 | 2003-04-29 | E20 Communications, Inc. | Semiconductor lasers |
US6608846B1 (en) * | 2001-05-01 | 2003-08-19 | Sandia Corporation | Bistable laser device with multiple coupled active vertical-cavity resonators |
US6611539B2 (en) * | 2001-05-29 | 2003-08-26 | Nsc Nanosemiconductor Gmbh | Wavelength-tunable vertical cavity surface emitting laser and method of making same |
US7075954B2 (en) | 2001-05-29 | 2006-07-11 | Nl Nanosemiconductor Gmbh | Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors |
US6717964B2 (en) | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
JP3561244B2 (en) * | 2001-07-05 | 2004-09-02 | 独立行政法人 科学技術振興機構 | Two-dimensional photonic crystal surface emitting laser |
US6671304B2 (en) | 2001-08-28 | 2003-12-30 | The United States Of America As Represented By The Secretary Of The Navy | Amplitude-modulated laser for high-bandwidth communications systems |
US7308202B2 (en) | 2002-02-01 | 2007-12-11 | Cubic Corporation | Secure covert combat identification friend-or-foe (IFF) system for the dismounted soldier |
US6628695B1 (en) * | 2002-03-07 | 2003-09-30 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL) |
US6943939B1 (en) * | 2002-03-19 | 2005-09-13 | Finisar Corporation | Optical amplifier with damped relaxation oscillation |
DE60214536T2 (en) * | 2002-07-30 | 2007-08-30 | Hitachi, Ltd. | Optical device |
US7497992B2 (en) | 2003-05-08 | 2009-03-03 | Sru Biosystems, Inc. | Detection of biochemical interactions on a biosensor using tunable filters and tunable lasers |
EP1496583B1 (en) * | 2003-07-07 | 2016-05-18 | II-VI Laser Enterprise GmbH | A vertical cavity surface emitting laser having improved transverse mode control and a method of forming the same |
JP4058633B2 (en) * | 2003-07-10 | 2008-03-12 | セイコーエプソン株式会社 | Surface-emitting light emitting device, optical module, optical transmission device |
JP4092570B2 (en) * | 2003-07-23 | 2008-05-28 | セイコーエプソン株式会社 | OPTICAL DEVICE AND ITS MANUFACTURING METHOD, OPTICAL MODULE, AND OPTICAL MODULE DRIVING METHOD |
JP3738849B2 (en) * | 2003-08-07 | 2006-01-25 | セイコーエプソン株式会社 | Surface emitting semiconductor laser, optical module, and optical transmission device |
JP4599865B2 (en) * | 2004-03-26 | 2010-12-15 | 住友電気工業株式会社 | Surface emitting semiconductor laser device |
US7369583B2 (en) * | 2004-06-07 | 2008-05-06 | Innolume Gmbh | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer |
EP1834390A1 (en) * | 2005-01-07 | 2007-09-19 | Vrije Universiteit Brussel | Broad-area microlasers and methods for driving them |
KR100668329B1 (en) * | 2005-02-16 | 2007-01-12 | 삼성전자주식회사 | Modulator integrated semiconductor laser device |
JP4250603B2 (en) * | 2005-03-28 | 2009-04-08 | キヤノン株式会社 | Terahertz wave generating element and manufacturing method thereof |
US20060227823A1 (en) * | 2005-03-30 | 2006-10-12 | Edris Mohammed | Electroabsorption vertical cavity surface emitting laser modulator and/or detector |
US7983572B2 (en) * | 2005-06-30 | 2011-07-19 | Finisar Corporation | Electro-absorption modulator integrated with a vertical cavity surface emitting laser |
US7801197B2 (en) * | 2006-06-16 | 2010-09-21 | Epicrystals Oy | High power laser device |
WO2008029283A2 (en) * | 2006-06-16 | 2008-03-13 | Nikolai Ledentsov | Optoelectronic device for high-speed data transfer |
JP4924172B2 (en) * | 2006-07-14 | 2012-04-25 | セイコーエプソン株式会社 | Optical element manufacturing method and optical element wafer |
WO2008121159A2 (en) * | 2006-10-19 | 2008-10-09 | Los Alamos National Security Llc | Active terahertz metamaterial devices |
JP4967615B2 (en) * | 2006-11-17 | 2012-07-04 | ソニー株式会社 | Semiconductor light emitting device |
JP2008211164A (en) * | 2007-01-29 | 2008-09-11 | Matsushita Electric Ind Co Ltd | Nitride semiconductor light-emitting device and method for fabricating the same |
JP4983346B2 (en) * | 2007-04-02 | 2012-07-25 | ソニー株式会社 | Semiconductor light emitting device |
US7508858B2 (en) * | 2007-04-30 | 2009-03-24 | The Research Foundation Of State University Of New York | Detuned duo-cavity laser-modulator device and method with detuning selected to minimize change in reflectivity |
US8027591B2 (en) * | 2007-10-29 | 2011-09-27 | Cubic Corporation | Resonant quantum well modulator driver |
US7859675B2 (en) | 2007-11-06 | 2010-12-28 | Cubic Corporation | Field test of a retro-reflector and detector assembly |
US9318872B2 (en) * | 2014-01-03 | 2016-04-19 | Finisar Corporation | VCSEL with integrated electrically modulated intra-cavity graphene absorber |
CN106887488B (en) * | 2015-12-15 | 2019-06-11 | 群创光电股份有限公司 | Light emitting diode and use display device obtained by this light emitting diode |
US11177632B2 (en) * | 2020-03-16 | 2021-11-16 | International Business Machines Corporation | Augmented semiconductor lasers with spontaneous emissions blockage |
EP3926769B1 (en) | 2020-06-18 | 2023-01-18 | TRUMPF Photonic Components GmbH | Method of producing a vertical cavity surface emitting laser |
GB202010596D0 (en) * | 2020-07-09 | 2020-08-26 | Rockley Photonics Ltd | Optoelectronic device and method of manufacture thereof |
DE102021122386A1 (en) | 2021-08-30 | 2023-03-02 | Trumpf Photonic Components Gmbh | Vertical surface emitting cavity laser (VCSEL), laser sensor and method of making a VCSEL |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60247982A (en) * | 1984-05-23 | 1985-12-07 | Nec Corp | Driving circuit for semiconductor laser |
US5416790A (en) * | 1992-11-06 | 1995-05-16 | Sanyo Electric Co., Ltd. | Semiconductor laser with a self-sustained pulsation |
US5604628A (en) * | 1994-12-30 | 1997-02-18 | Cornell Research Foundation, Inc. | Optical laser amplifier combined with a spontaneous emission filter |
US5574738A (en) * | 1995-06-07 | 1996-11-12 | Honeywell Inc. | Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser |
US5519362A (en) * | 1995-08-23 | 1996-05-21 | The United States Of America As Represented By The Secretary Of The Air Force | Optical current controlled oscillators |
US5757837A (en) * | 1996-10-16 | 1998-05-26 | The Regents Of The University Of California | Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
-
1998
- 1998-05-01 US US09/071,653 patent/US6026108A/en not_active Expired - Lifetime
-
1999
- 1999-04-30 JP JP2000547679A patent/JP2002514016A/en not_active Withdrawn
- 1999-04-30 EP EP99921608A patent/EP1075718A4/en not_active Withdrawn
- 1999-04-30 WO PCT/US1999/009607 patent/WO1999057789A1/en not_active Application Discontinuation
- 1999-04-30 AU AU38775/99A patent/AU3877599A/en not_active Abandoned
- 1999-04-30 CA CA002330537A patent/CA2330537A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1075718A1 (en) | 2001-02-14 |
EP1075718A4 (en) | 2001-09-19 |
WO1999057789A1 (en) | 1999-11-11 |
US6026108A (en) | 2000-02-15 |
CA2330537A1 (en) | 1999-11-11 |
JP2002514016A (en) | 2002-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |