AU3877599A - Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber - Google Patents

Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber

Info

Publication number
AU3877599A
AU3877599A AU38775/99A AU3877599A AU3877599A AU 3877599 A AU3877599 A AU 3877599A AU 38775/99 A AU38775/99 A AU 38775/99A AU 3877599 A AU3877599 A AU 3877599A AU 3877599 A AU3877599 A AU 3877599A
Authority
AU
Australia
Prior art keywords
vertical
emitting laser
cavity surface
optical absorber
well optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU38775/99A
Inventor
Connie J. Chang-Hasnain
Janice A. Hudgings
Kam-Yin Lau
Sui F. Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of AU3877599A publication Critical patent/AU3877599A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18316—Airgap confined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18325—Between active layer and substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU38775/99A 1998-05-01 1999-04-30 Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber Abandoned AU3877599A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/071,653 US6026108A (en) 1996-10-16 1998-05-01 Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber
US09071653 1998-05-01
PCT/US1999/009607 WO1999057789A1 (en) 1998-05-01 1999-04-30 Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber

Publications (1)

Publication Number Publication Date
AU3877599A true AU3877599A (en) 1999-11-23

Family

ID=22102723

Family Applications (1)

Application Number Title Priority Date Filing Date
AU38775/99A Abandoned AU3877599A (en) 1998-05-01 1999-04-30 Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber

Country Status (6)

Country Link
US (1) US6026108A (en)
EP (1) EP1075718A4 (en)
JP (1) JP2002514016A (en)
AU (1) AU3877599A (en)
CA (1) CA2330537A1 (en)
WO (1) WO1999057789A1 (en)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
JP4441014B2 (en) * 1999-07-26 2010-03-31 富士ゼロックス株式会社 Photoelectric conversion element for wireless communication
US6624000B1 (en) * 1999-09-02 2003-09-23 Agility Communications, Inc. Method for making a monolithic wavelength converter assembly
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6555407B1 (en) * 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
WO2001031756A1 (en) 1999-10-29 2001-05-03 E20 Communications, Inc. Modulated integrated optically pumped vertical cavity surface emitting lasers
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
KR100317988B1 (en) * 1999-12-20 2001-12-24 오길록 Method for fabricating multi-channel array optical device
DE10004398A1 (en) * 2000-02-02 2001-08-16 Infineon Technologies Ag VCSEL with monolithically integrated photodetector
EP1126739A1 (en) * 2000-02-15 2001-08-22 Lucent Technologies Inc. Method of and arrangement for buffering digital optical signals
US6643305B2 (en) 2000-04-07 2003-11-04 The United States Of America As Represented By The Secretary Of The Navy Optical pumping injection cavity for optically pumped devices
KR100708081B1 (en) * 2000-05-18 2007-04-16 삼성전자주식회사 Apparatus and method for manufacturing oxide aperture of VCSEL
US6678301B1 (en) * 2000-07-14 2004-01-13 Triquint Technology Holding Co. Apparatus and method for minimizing wavelength chirp of laser devices
NL1015714C2 (en) * 2000-07-14 2002-01-15 Dsm Nv Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropanoic acid.
US6445021B1 (en) * 2000-09-20 2002-09-03 International Business Machines Corporation Negative differential resistance reoxidized nitride silicon-based photodiode and method
US6674785B2 (en) 2000-09-21 2004-01-06 Ricoh Company, Ltd. Vertical-cavity, surface-emission type laser diode and fabrication process thereof
DE10102458A1 (en) 2001-01-15 2002-07-25 Infineon Technologies Ag Laser diode for scanning media has fading absorber means for irradiating a vertical resonator and absorber material integrated into a sequence of layers.
US20020163952A1 (en) * 2001-03-01 2002-11-07 Wen-Yen Hwang VCSEL with single lasing-reflectivity peak reflector
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US6608846B1 (en) * 2001-05-01 2003-08-19 Sandia Corporation Bistable laser device with multiple coupled active vertical-cavity resonators
US6611539B2 (en) * 2001-05-29 2003-08-26 Nsc Nanosemiconductor Gmbh Wavelength-tunable vertical cavity surface emitting laser and method of making same
US7075954B2 (en) 2001-05-29 2006-07-11 Nl Nanosemiconductor Gmbh Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors
US6717964B2 (en) 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
JP3561244B2 (en) * 2001-07-05 2004-09-02 独立行政法人 科学技術振興機構 Two-dimensional photonic crystal surface emitting laser
US6671304B2 (en) 2001-08-28 2003-12-30 The United States Of America As Represented By The Secretary Of The Navy Amplitude-modulated laser for high-bandwidth communications systems
US7308202B2 (en) 2002-02-01 2007-12-11 Cubic Corporation Secure covert combat identification friend-or-foe (IFF) system for the dismounted soldier
US6628695B1 (en) * 2002-03-07 2003-09-30 The Board Of Trustees Of The Leland Stanford Junior University Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL)
US6943939B1 (en) * 2002-03-19 2005-09-13 Finisar Corporation Optical amplifier with damped relaxation oscillation
EP1387452B1 (en) * 2002-07-30 2006-09-06 Hitachi, Ltd. Optical device
US7497992B2 (en) * 2003-05-08 2009-03-03 Sru Biosystems, Inc. Detection of biochemical interactions on a biosensor using tunable filters and tunable lasers
EP1496583B1 (en) * 2003-07-07 2016-05-18 II-VI Laser Enterprise GmbH A vertical cavity surface emitting laser having improved transverse mode control and a method of forming the same
JP4058633B2 (en) * 2003-07-10 2008-03-12 セイコーエプソン株式会社 Surface-emitting light emitting device, optical module, optical transmission device
JP4092570B2 (en) * 2003-07-23 2008-05-28 セイコーエプソン株式会社 OPTICAL DEVICE AND ITS MANUFACTURING METHOD, OPTICAL MODULE, AND OPTICAL MODULE DRIVING METHOD
JP3738849B2 (en) * 2003-08-07 2006-01-25 セイコーエプソン株式会社 Surface emitting semiconductor laser, optical module, and optical transmission device
JP4599865B2 (en) * 2004-03-26 2010-12-15 住友電気工業株式会社 Surface emitting semiconductor laser device
WO2005122349A1 (en) * 2004-06-07 2005-12-22 Nl Nanosemiconductor Gmbh Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer
WO2006072149A1 (en) * 2005-01-07 2006-07-13 Vrije Univeriteit Brussel Broad-area microlasers and methods for driving them
KR100668329B1 (en) * 2005-02-16 2007-01-12 삼성전자주식회사 Modulator integrated semiconductor laser device
JP4250603B2 (en) 2005-03-28 2009-04-08 キヤノン株式会社 Terahertz wave generating element and manufacturing method thereof
US20060227823A1 (en) * 2005-03-30 2006-10-12 Edris Mohammed Electroabsorption vertical cavity surface emitting laser modulator and/or detector
US7983572B2 (en) * 2005-06-30 2011-07-19 Finisar Corporation Electro-absorption modulator integrated with a vertical cavity surface emitting laser
US7801197B2 (en) * 2006-06-16 2010-09-21 Epicrystals Oy High power laser device
EP2033282B1 (en) * 2006-06-16 2012-10-31 Russian limited liability company "Connector Optics" Optoelectronic device for high-speed data transfer
JP4924172B2 (en) * 2006-07-14 2012-04-25 セイコーエプソン株式会社 Optical element manufacturing method and optical element wafer
WO2008121159A2 (en) * 2006-10-19 2008-10-09 Los Alamos National Security Llc Active terahertz metamaterial devices
JP4967615B2 (en) * 2006-11-17 2012-07-04 ソニー株式会社 Semiconductor light emitting device
JP2008211164A (en) * 2007-01-29 2008-09-11 Matsushita Electric Ind Co Ltd Nitride semiconductor light-emitting device and method for fabricating the same
JP4983346B2 (en) * 2007-04-02 2012-07-25 ソニー株式会社 Semiconductor light emitting device
US7508858B2 (en) * 2007-04-30 2009-03-24 The Research Foundation Of State University Of New York Detuned duo-cavity laser-modulator device and method with detuning selected to minimize change in reflectivity
US8027591B2 (en) * 2007-10-29 2011-09-27 Cubic Corporation Resonant quantum well modulator driver
US7859675B2 (en) 2007-11-06 2010-12-28 Cubic Corporation Field test of a retro-reflector and detector assembly
US9318872B2 (en) * 2014-01-03 2016-04-19 Finisar Corporation VCSEL with integrated electrically modulated intra-cavity graphene absorber
CN106887488B (en) * 2015-12-15 2019-06-11 群创光电股份有限公司 Light emitting diode and use display device obtained by this light emitting diode
US11177632B2 (en) 2020-03-16 2021-11-16 International Business Machines Corporation Augmented semiconductor lasers with spontaneous emissions blockage
EP3926769B1 (en) 2020-06-18 2023-01-18 TRUMPF Photonic Components GmbH Method of producing a vertical cavity surface emitting laser
GB202010596D0 (en) * 2020-07-09 2020-08-26 Rockley Photonics Ltd Optoelectronic device and method of manufacture thereof
DE102021122386A1 (en) 2021-08-30 2023-03-02 Trumpf Photonic Components Gmbh Vertical surface emitting cavity laser (VCSEL), laser sensor and method of making a VCSEL

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247982A (en) * 1984-05-23 1985-12-07 Nec Corp Driving circuit for semiconductor laser
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
US5604628A (en) * 1994-12-30 1997-02-18 Cornell Research Foundation, Inc. Optical laser amplifier combined with a spontaneous emission filter
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US5519362A (en) * 1995-08-23 1996-05-21 The United States Of America As Represented By The Secretary Of The Air Force Optical current controlled oscillators
US5757837A (en) * 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same

Also Published As

Publication number Publication date
CA2330537A1 (en) 1999-11-11
EP1075718A1 (en) 2001-02-14
JP2002514016A (en) 2002-05-14
EP1075718A4 (en) 2001-09-19
WO1999057789A1 (en) 1999-11-11
US6026108A (en) 2000-02-15

Similar Documents

Publication Publication Date Title
AU3877599A (en) Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber
AU9472298A (en) Tunable fiber fabry-perot surface-emitting lasers
AU2001293212A1 (en) Contact scheme for intracavity-contacted vertical-cavity surface-emitting laser
EP0748007A3 (en) Surface-emitting lasers
AU6478096A (en) Current-apertured vertical-cavity laser
EP1072072B8 (en) Surface-emitting optical device
AU2002241558A1 (en) Short cavity tunable laser with mode position compensation
AU2002230546A1 (en) Short cavity tunable laser with mode position compensation
AU6883698A (en) Compact excimer laser insulator with integral pre-ionizer
AU2001232754A1 (en) Pseudo-monolithic laser with an intracavity optical parametric oscillator
AU6142399A (en) Tunable laser
AU5928500A (en) Wavelength-locked external cavity lasers with an integrated modulator
AU4238596A (en) Laser system with anamorphic confocal unstable resonator
EP1246328A3 (en) Intracavity contacted long wavelength VCSELs with buried antimony layers
AU5842100A (en) Laser wavelength stabilization
AU3580700A (en) Multiple-wavelength mode-locked laser
GB9422951D0 (en) Surface-emitting laser
AU1255101A (en) Tunable laser with microactuator
EP0649200A3 (en) Planar, topology-free, single-mode, semiconductor quantum-well window laser with current confinement.
WO2000072409A3 (en) Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics
AU2001288727A1 (en) Integrated grating-outcoupled surface-emitting lasers
AU1712500A (en) Asymmetrical distributed feedback fiber laser
AU6534398A (en) Intra-cavity lens structures for semiconductor lasers
AU7821898A (en) Very narrow band laser with unstable resonance cavity
AU2666497A (en) Vertical cavity lasers with monolithically integrated refractive microlenses

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase