AU3618997A - Process and device for producing stable endohedral fullerenes of structure z@cx, in which x is greater than or equal to 60 - Google Patents

Process and device for producing stable endohedral fullerenes of structure z@cx, in which x is greater than or equal to 60

Info

Publication number
AU3618997A
AU3618997A AU36189/97A AU3618997A AU3618997A AU 3618997 A AU3618997 A AU 3618997A AU 36189/97 A AU36189/97 A AU 36189/97A AU 3618997 A AU3618997 A AU 3618997A AU 3618997 A AU3618997 A AU 3618997A
Authority
AU
Australia
Prior art keywords
fullerenes
produced
particles
accelerated
producing stable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU36189/97A
Inventor
Theo Almeida Murphy
Manfred Hohne
Bernd Mertesacker
Thomas Pawlik
Bjorn Pietzak
Johann-Martin Spaeth
Alois Weidinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hahn Meitner Institut Berlin GmbH
Original Assignee
Hahn Meitner Institut Berlin GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hahn Meitner Institut Berlin GmbH filed Critical Hahn Meitner Institut Berlin GmbH
Publication of AU3618997A publication Critical patent/AU3618997A/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/156—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Abstract

A process is disclosed for producing stable endohedral fullerenes of structure Z@Cx, in which x >/= 60. A Z-atom is implanted in the fullerenes and both fullerenes and low energy accelerated Z-particles are produced at the same time and interact with each other in a vacuum vessel. The fullerenes are then withdrawn from the vacuum vessel, dissolved in a solvent and dried. Atoms of non-metals and metalloids are used as Z-atoms. The fullerenes are produced by vapour phase deposition of Cx on a substrate and and the accelerated Z-particles are produced by an ion source and directed onto the growing fullerene layer on the substrate. Alternatively, the fullerenes are produced by evaporating Cx in a furnace through which flows a gas mixture which contains the material to be implanted and the accelerated Z-particles are produced by a high-voltage gas discharge in the same furnace. The disclosed device for producing endohedral fullerenes by means of a high-voltage gas discharge has a cathode which is provided with cooling means and/or has an enlarged surface.
AU36189/97A 1996-06-28 1997-06-27 Process and device for producing stable endohedral fullerenes of structure z@cx, in which x is greater than or equal to 60 Abandoned AU3618997A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19627337 1996-06-28
DE19627337 1996-06-28
PCT/DE1997/001399 WO1998000363A1 (en) 1996-06-28 1997-06-27 PROCESS AND DEVICE FOR PRODUCING STABLE ENDOHEDRAL FULLERENES OF STRUCTURE Z@Cx, IN WHICH x ≥ 60

Publications (1)

Publication Number Publication Date
AU3618997A true AU3618997A (en) 1998-01-21

Family

ID=7799152

Family Applications (1)

Application Number Title Priority Date Filing Date
AU36189/97A Abandoned AU3618997A (en) 1996-06-28 1997-06-27 Process and device for producing stable endohedral fullerenes of structure z@cx, in which x is greater than or equal to 60

Country Status (5)

Country Link
EP (1) EP0958241B1 (en)
AT (1) ATE201658T1 (en)
AU (1) AU3618997A (en)
DE (3) DE59703700D1 (en)
WO (1) WO1998000363A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10058243C2 (en) * 2000-11-19 2002-10-10 Hahn Meitner Inst Berlin Gmbh Method and arrangement for processing quantum mechanical information units
DE10122750B4 (en) * 2001-05-10 2008-04-10 Diehl Stiftung & Co.Kg Process for the preparation of carbon allotropes and their intercalates or endohedral compounds
JP2005001970A (en) * 2003-06-16 2005-01-06 Sony Corp Nitrogen-containing carbon material and its manufacturing method
JP2005053904A (en) * 2003-07-24 2005-03-03 Ideal Star Inc Fullerene and anticancer therapeutic agent
CN100453457C (en) * 2007-02-08 2009-01-21 厦门大学 Production of doped aggregate cluster
AU2010238502A1 (en) * 2009-04-14 2011-11-03 Bucky'o'zun Aps Endohedral fullerenes having enclosed therein one or more ozone molecules, and their use as a UV-absorbing agent

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300203A (en) * 1991-11-27 1994-04-05 William Marsh Rice University Process for making fullerenes by the laser evaporation of carbon
JP3544237B2 (en) * 1995-02-09 2004-07-21 独立行政法人 科学技術振興機構 Production method of giant fullerene

Also Published As

Publication number Publication date
ATE201658T1 (en) 2001-06-15
EP0958241B1 (en) 2001-05-30
DE59703700D1 (en) 2001-07-05
DE19780628D2 (en) 1999-06-17
WO1998000363A1 (en) 1998-01-08
DE19728321A1 (en) 1998-01-02
EP0958241A1 (en) 1999-11-24

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