AU3261401A - Molecular scale electronic devices - Google Patents

Molecular scale electronic devices

Info

Publication number
AU3261401A
AU3261401A AU32614/01A AU3261401A AU3261401A AU 3261401 A AU3261401 A AU 3261401A AU 32614/01 A AU32614/01 A AU 32614/01A AU 3261401 A AU3261401 A AU 3261401A AU 3261401 A AU3261401 A AU 3261401A
Authority
AU
Australia
Prior art keywords
electronic devices
molecular scale
scale electronic
molecular
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU32614/01A
Inventor
Jia Chen
David W. Price
Adam M. Rawlett
Mark A Reed
James M Tour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yale University
Original Assignee
Yale University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/551,716 external-priority patent/US6756605B1/en
Application filed by Yale University filed Critical Yale University
Publication of AU3261401A publication Critical patent/AU3261401A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Conductive Materials (AREA)
AU32614/01A 1999-09-20 2000-09-18 Molecular scale electronic devices Abandoned AU3261401A (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US15471699P 1999-09-20 1999-09-20
US60154716 1999-09-20
US15714999P 1999-09-30 1999-09-30
US60157149 1999-09-30
US52788500A 2000-03-20 2000-03-20
US09527885 2000-03-20
US09/551,716 US6756605B1 (en) 1999-09-20 2000-04-18 Molecular scale electronic devices
US09551716 2000-04-18
PCT/US2000/025518 WO2001027972A2 (en) 1999-09-20 2000-09-18 Molecular scale electronic devices

Publications (1)

Publication Number Publication Date
AU3261401A true AU3261401A (en) 2001-04-23

Family

ID=27496149

Family Applications (1)

Application Number Title Priority Date Filing Date
AU32614/01A Abandoned AU3261401A (en) 1999-09-20 2000-09-18 Molecular scale electronic devices

Country Status (6)

Country Link
EP (1) EP1542869A4 (en)
JP (1) JP2004518268A (en)
AU (1) AU3261401A (en)
CA (1) CA2404832A1 (en)
TW (1) TW463183B (en)
WO (1) WO2001027972A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10132640A1 (en) * 2001-07-05 2003-01-23 Infineon Technologies Ag Molecular electronics arrangement and method for producing a molecular electronics arrangement
US6828685B2 (en) 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
WO2004050231A2 (en) * 2002-11-29 2004-06-17 Aarhus Universitet (bio) organic oligomers for the preparation of macromolecules
DE10337830B4 (en) * 2003-08-18 2005-08-25 Infineon Technologies Ag Method for producing a multilayer arrangement with a metal layer in a molecular electronics arrangement
DE10340610B4 (en) * 2003-08-29 2007-06-06 Infineon Technologies Ag Connection with at least one storage unit made of organic storage material, in particular for use in CMOS structures, semiconductor component and a method for producing a semiconductor component
US7035140B2 (en) * 2004-01-16 2006-04-25 Hewlett-Packard Development Company, L.P. Organic-polymer memory element
US9121843B2 (en) * 2007-05-08 2015-09-01 Trustees Of Boston University Chemical functionalization of solid-state nanopores and nanopore arrays and applications thereof
US8933437B2 (en) 2008-11-27 2015-01-13 Kaneka Corporation Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material
JP2013115388A (en) * 2011-11-30 2013-06-10 Toshiba Corp Organic molecule memory and organic molecule therefor
JP2022107072A (en) * 2019-05-23 2022-07-21 国立大学法人東京工業大学 Variable resistance device and manufacturing method for the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629798A (en) * 1983-04-18 1986-12-16 The B. F. Goodrich Company Electrically conductive pyrrole polymers and process of preparing the same
DE3751376T2 (en) * 1986-10-13 1995-11-16 Canon Kk Circuit element.
US5110669A (en) * 1989-09-28 1992-05-05 The Dow Chemical Company Conductive polymer laminates
US5597890A (en) * 1993-11-01 1997-01-28 Research Corporation Technologies, Inc. Conjugated polymer exciplexes and applications thereof
US5563424A (en) * 1994-03-24 1996-10-08 Uniax Corporation Polymer grid triodes

Also Published As

Publication number Publication date
JP2004518268A (en) 2004-06-17
WO2001027972A2 (en) 2001-04-19
WO2001027972A9 (en) 2002-11-14
CA2404832A1 (en) 2001-04-19
WO2001027972A3 (en) 2001-11-22
TW463183B (en) 2001-11-11
EP1542869A2 (en) 2005-06-22
EP1542869A4 (en) 2005-06-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase