AU2711488A - P-type buffer layers for integrated circuits - Google Patents
P-type buffer layers for integrated circuitsInfo
- Publication number
- AU2711488A AU2711488A AU27114/88A AU2711488A AU2711488A AU 2711488 A AU2711488 A AU 2711488A AU 27114/88 A AU27114/88 A AU 27114/88A AU 2711488 A AU2711488 A AU 2711488A AU 2711488 A AU2711488 A AU 2711488A
- Authority
- AU
- Australia
- Prior art keywords
- integrated circuits
- type buffer
- buffer layers
- layers
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12002087A | 1987-11-13 | 1987-11-13 | |
US120020 | 1987-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2711488A true AU2711488A (en) | 1989-06-01 |
Family
ID=22387803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU27114/88A Abandoned AU2711488A (en) | 1987-11-13 | 1988-11-09 | P-type buffer layers for integrated circuits |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2711488A (en) |
CA (1) | CA1315018C (en) |
WO (1) | WO1989004554A1 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4632710A (en) * | 1983-05-10 | 1986-12-30 | Raytheon Company | Vapor phase epitaxial growth of carbon doped layers of Group III-V materials |
-
1988
- 1988-11-09 AU AU27114/88A patent/AU2711488A/en not_active Abandoned
- 1988-11-09 WO PCT/US1988/004014 patent/WO1989004554A1/en unknown
- 1988-11-14 CA CA000582971A patent/CA1315018C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1989004554A1 (en) | 1989-05-18 |
CA1315018C (en) | 1993-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2234112B (en) | Semiconductor component | |
AU582633B2 (en) | Digital integrated circuits | |
AU2120888A (en) | Transponder circuits | |
AU566114B2 (en) | Article transferring device | |
GB2208144B (en) | Buffer circuit | |
EP0624878A3 (en) | Semiconductor integrated circuit. | |
AU1687488A (en) | Packaging system for stacking integrated circuits | |
AU6445590A (en) | Package for an integrated circuit structure | |
GB8713385D0 (en) | Semiconductor with circuitry | |
AU2676488A (en) | Semiconductor device | |
AU7975987A (en) | Integrated circuit output buffer | |
EP0315385A3 (en) | Delay circuits for integrated circuits | |
AU2084788A (en) | Semiconductor casing | |
AU1719188A (en) | Machine-tool | |
AU7819291A (en) | Laminated wafer | |
GB8715499D0 (en) | Manufacturing di-electrically isolated circuits | |
GB8811699D0 (en) | Buffer circuit | |
AU2093288A (en) | Semiconductor laser | |
GB2207319B (en) | Buffer circuit | |
GB8723539D0 (en) | Integrated circuits | |
GB2222800B (en) | Hybrid circuits | |
GB8726402D0 (en) | Fabricating circuits | |
GB2222911B (en) | Hybrid circuits | |
AU2711488A (en) | P-type buffer layers for integrated circuits | |
GB8813042D0 (en) | Semiconductor integrated circuit |