AU2702195A - High temperature, high holding current semiconductor thyristor - Google Patents

High temperature, high holding current semiconductor thyristor

Info

Publication number
AU2702195A
AU2702195A AU27021/95A AU2702195A AU2702195A AU 2702195 A AU2702195 A AU 2702195A AU 27021/95 A AU27021/95 A AU 27021/95A AU 2702195 A AU2702195 A AU 2702195A AU 2702195 A AU2702195 A AU 2702195A
Authority
AU
Australia
Prior art keywords
holding current
current semiconductor
high temperature
semiconductor thyristor
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU27021/95A
Inventor
Samuel A Johnson
Richard E Nelson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beacon Light Products Inc
Original Assignee
Beacon Light Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beacon Light Products Inc filed Critical Beacon Light Products Inc
Publication of AU2702195A publication Critical patent/AU2702195A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
AU27021/95A 1994-06-10 1995-06-09 High temperature, high holding current semiconductor thyristor Abandoned AU2702195A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25789994A 1994-06-10 1994-06-10
US257899 1994-06-10
PCT/US1995/007357 WO1995034914A1 (en) 1994-06-10 1995-06-09 High temperature, high holding current semiconductor thyristor

Publications (1)

Publication Number Publication Date
AU2702195A true AU2702195A (en) 1996-01-05

Family

ID=22978254

Family Applications (1)

Application Number Title Priority Date Filing Date
AU27021/95A Abandoned AU2702195A (en) 1994-06-10 1995-06-09 High temperature, high holding current semiconductor thyristor

Country Status (2)

Country Link
AU (1) AU2702195A (en)
WO (1) WO1995034914A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950688B2 (en) 2019-02-21 2021-03-16 Kemet Electronics Corporation Packages for power modules with integrated passives

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
US4063278A (en) * 1975-01-06 1977-12-13 Hutson Jearld L Semiconductor switch having sensitive gate characteristics at high temperatures
JPS5927571A (en) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
FR2697674B1 (en) * 1992-10-29 1995-01-13 Sgs Thomson Microelectronics Thyristor and common cathode thyristor assembly.

Also Published As

Publication number Publication date
WO1995034914A1 (en) 1995-12-21

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