AU2447495A - Multi-frequency inductive method and apparatus for the processing of material - Google Patents

Multi-frequency inductive method and apparatus for the processing of material

Info

Publication number
AU2447495A
AU2447495A AU24474/95A AU2447495A AU2447495A AU 2447495 A AU2447495 A AU 2447495A AU 24474/95 A AU24474/95 A AU 24474/95A AU 2447495 A AU2447495 A AU 2447495A AU 2447495 A AU2447495 A AU 2447495A
Authority
AU
Australia
Prior art keywords
processing
frequency inductive
inductive method
frequency
inductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU24474/95A
Inventor
Jean-Francois Daviet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cobrain NV
Original Assignee
Cobrain NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cobrain NV filed Critical Cobrain NV
Publication of AU2447495A publication Critical patent/AU2447495A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU24474/95A 1994-04-26 1995-04-20 Multi-frequency inductive method and apparatus for the processing of material Abandoned AU2447495A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
BE9400433 1994-04-26
BE9400433A BE1008338A5 (en) 1994-04-26 1994-04-26 Multi-frequency inductive method and device for working material.
PCT/EP1995/001522 WO1995029273A1 (en) 1994-04-26 1995-04-20 Multi-frequency inductive method and apparatus for the processing of material

Publications (1)

Publication Number Publication Date
AU2447495A true AU2447495A (en) 1995-11-16

Family

ID=3888123

Family Applications (1)

Application Number Title Priority Date Filing Date
AU24474/95A Abandoned AU2447495A (en) 1994-04-26 1995-04-20 Multi-frequency inductive method and apparatus for the processing of material

Country Status (4)

Country Link
EP (1) EP0758409A1 (en)
AU (1) AU2447495A (en)
BE (1) BE1008338A5 (en)
WO (1) WO1995029273A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19900179C1 (en) * 1999-01-07 2000-02-24 Bosch Gmbh Robert Installation for etching substrates by high-density plasmas comprises a phase delay line causing the supply voltages at both ends of the inductively coupled plasma coil to be in counter-phase with one another
JP3555844B2 (en) 1999-04-09 2004-08-18 三宅 正二郎 Sliding member and manufacturing method thereof
DE19923018C2 (en) * 1999-05-19 2001-09-27 Univ Dresden Tech Device for processing band-shaped workpieces using resonant high-frequency plasmas
US6969198B2 (en) 2002-11-06 2005-11-29 Nissan Motor Co., Ltd. Low-friction sliding mechanism
JP4863152B2 (en) 2003-07-31 2012-01-25 日産自動車株式会社 gear
US7771821B2 (en) 2003-08-21 2010-08-10 Nissan Motor Co., Ltd. Low-friction sliding member and low-friction sliding mechanism using same
CN100366788C (en) * 2004-09-09 2008-02-06 复旦大学 Vacuum thermal evaporation film-forming method using strong electric field

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793140A (en) * 1953-10-20 1957-05-21 Ohio Commw Eng Co Method of gas plating with a chromium compound and products of the method
JPS5633839A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Plasma treatment and device therefor
US4388344A (en) * 1981-08-31 1983-06-14 United Technolgies Corporation Method of repairing surface defects in coated laser mirrors
JPS61222534A (en) * 1985-03-28 1986-10-03 Anelva Corp Method and apparatus for surface treatment
JPS62188783A (en) * 1986-02-14 1987-08-18 Sanyo Electric Co Ltd Production of electrostatic latent image carrier
JPS63317676A (en) * 1987-06-19 1988-12-26 Sharp Corp Production of thin metallic compound film having non-grained structure
JPH04214094A (en) * 1990-04-26 1992-08-05 Hitachi Ltd Manufacture of synthetic diamond thin film, the above thin film and apparatus using same

Also Published As

Publication number Publication date
WO1995029273A1 (en) 1995-11-02
BE1008338A5 (en) 1996-04-02
EP0758409A1 (en) 1997-02-19

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