AU2010905488A0 - A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer - Google Patents

A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer

Info

Publication number
AU2010905488A0
AU2010905488A0 AU2010905488A AU2010905488A AU2010905488A0 AU 2010905488 A0 AU2010905488 A0 AU 2010905488A0 AU 2010905488 A AU2010905488 A AU 2010905488A AU 2010905488 A AU2010905488 A AU 2010905488A AU 2010905488 A0 AU2010905488 A0 AU 2010905488A0
Authority
AU
Australia
Prior art keywords
germanium layer
forming
silicon substrate
device including
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2010905488A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NewSouth Innovations Pty Ltd
Original Assignee
NewSouth Innovations Pty Ltd
Filing date
Publication date
Application filed by NewSouth Innovations Pty Ltd filed Critical NewSouth Innovations Pty Ltd
Publication of AU2010905488A0 publication Critical patent/AU2010905488A0/en
Priority to PCT/AU2011/001599 priority Critical patent/WO2012079113A1/en
Priority to TW100146349A priority patent/TWI613832B/en
Priority to US13/916,823 priority patent/US9508889B2/en
Abandoned legal-status Critical Current

Links

AU2010905488A 2010-12-15 2010-12-15 A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer Abandoned AU2010905488A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/AU2011/001599 WO2012079113A1 (en) 2010-12-15 2011-12-12 A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer
TW100146349A TWI613832B (en) 2010-12-15 2011-12-14 A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer
US13/916,823 US9508889B2 (en) 2010-12-15 2013-06-13 Method of forming a germanium layer on a silicon substrate

Publications (1)

Publication Number Publication Date
AU2010905488A0 true AU2010905488A0 (en) 2011-01-06

Family

ID=

Similar Documents

Publication Publication Date Title
TWI562202B (en) Amorphous silicon film formation method and amorphous silicon film formation apparatus
GB201104164D0 (en) Apparatus and method for monitoring a thickness of silicon wafer with highly doped layer at a backside of the silicon wafer and apparatus for thinning wafer
GB2486352B (en) Method of forming semiconductor film and photovoltaic device including the film
EP2660869A4 (en) Semiconductor device and method for manufacturing same
EP2394787A4 (en) Silicon carbide monocrystal substrate and manufacturing method therefor
EP2571052A4 (en) Semiconductor device and method of manufacturing the same
EP2608251A4 (en) Method of manufacturing organic semiconductor thin film and monocrystalline organic semiconductor thin film
EP2800140A4 (en) Thin film transistor, array substrate and manufacturing method thereof, and display device
EP2691980A4 (en) Thin silicon solar cell and method of manufacture
EP2420599A4 (en) Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
TWI562201B (en) Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
EP2767524A4 (en) Silicon nitride substrate and method for manufacturing silicon nitride substrate
EP2782153A4 (en) Display device, thin film transistor, array substrate and manufacturing method thereof
EP2345062A4 (en) Methods of forming multi-doped junctions on a substrate
GB2480265B (en) A semiconductor device and a method of fabricating a semiconductor device
EP2744310A4 (en) Wiring substrate and method for manufacturing same and semiconductor device
EP2498278A4 (en) Plasma cvd device and method of manufacturing silicon thin film
SG10201403301YA (en) Method for forming cadmium tin oxide layer and a photovoltaic device
EP2530718A4 (en) Silicon carbide semiconductor device and production method therefor
EP2660366A4 (en) Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for producing semiconductor device
EP2631934A4 (en) Semiconductor junction structure and method for manufacturing semiconductor junction structure
EP2584593A4 (en) Formation method for silicon oxynitride film, and substrate having silicon oxynitride film manufactured using same
EP2748840A4 (en) A semiconductor substrate and method of manufacturing
EP2413348A4 (en) Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate
GB2478602B (en) A semiconductor device and method of manufacturing a semiconductor device