Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2010905488A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NewSouth Innovations Pty Ltd
Original Assignee
NewSouth Innovations Pty Ltd
Filing date
Publication date
Application filed by NewSouth Innovations Pty LtdfiledCriticalNewSouth Innovations Pty Ltd
Publication of AU2010905488A0publicationCriticalpatent/AU2010905488A0/en
Priority to PCT/AU2011/001599priorityCriticalpatent/WO2012079113A1/en
Priority to TW100146349Aprioritypatent/TWI613832B/en
Priority to US13/916,823prioritypatent/US9508889B2/en
AU2010905488A2010-12-152010-12-15A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer
AbandonedAU2010905488A0
(en)
Apparatus and method for monitoring a thickness of silicon wafer with highly doped layer at a backside of the silicon wafer and apparatus for thinning wafer