AU2005234303A1 - Semiconductor element and semiconductor system - Google Patents

Semiconductor element and semiconductor system

Info

Publication number
AU2005234303A1
AU2005234303A1 AU2005234303A AU2005234303A AU2005234303A1 AU 2005234303 A1 AU2005234303 A1 AU 2005234303A1 AU 2005234303 A AU2005234303 A AU 2005234303A AU 2005234303 A AU2005234303 A AU 2005234303A AU 2005234303 A1 AU2005234303 A1 AU 2005234303A1
Authority
AU
Australia
Prior art keywords
semiconductor
semiconductor element
semiconductor system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
AU2005234303A
Inventor
Hiroshi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Publication of AU2005234303A1 publication Critical patent/AU2005234303A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
AU2005234303A 2004-04-12 2005-04-11 Semiconductor element and semiconductor system Pending AU2005234303A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004116925A JP2007250561A (en) 2004-04-12 2004-04-12 Semiconductor element and semiconductor system
PCT/JP2005/007034 WO2005101475A1 (en) 2004-04-12 2005-04-11 Semiconductor element and semiconductor system

Publications (1)

Publication Number Publication Date
AU2005234303A1 true AU2005234303A1 (en) 2005-10-27

Family

ID=35150248

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2005234303A Pending AU2005234303A1 (en) 2004-04-12 2005-04-11 Semiconductor element and semiconductor system

Country Status (4)

Country Link
JP (1) JP2007250561A (en)
AU (1) AU2005234303A1 (en)
TW (1) TW200539242A (en)
WO (1) WO2005101475A1 (en)

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JP4353861B2 (en) 2004-06-30 2009-10-28 Ｎｅｃエレクトロニクス株式会社 Semiconductor device
JP4250154B2 (en) 2005-06-30 2009-04-08 新光電気工業株式会社 Semiconductor chip and manufacturing method thereof
US9312217B2 (en) 2006-02-01 2016-04-12 Silex Microsystems Ab Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
KR100871381B1 (en) * 2007-06-20 2008-12-02 주식회사 하이닉스반도체 Through silicon via chip stack package
US7939941B2 (en) 2007-06-27 2011-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of through via before contact processing
US7872357B2 (en) 2008-03-05 2011-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protection for bonding pads and methods of formation
WO2009136495A1 (en) 2008-05-09 2009-11-12 国立大学法人九州工業大学 Chip-size double side connection package and method for manufacturing the same
US8816486B2 (en) 2008-05-12 2014-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Pad structure for 3D integrated circuit
US8853830B2 (en) 2008-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. System, structure, and method of manufacturing a semiconductor substrate stack
KR101458958B1 (en) 2008-06-10 2014-11-13 삼성전자주식회사 Semiconductor chip, semiconductor package, and method of fabricating the semiconductor chip
US7968975B2 (en) * 2008-08-08 2011-06-28 International Business Machines Corporation Metal wiring structure for integration with through substrate vias
JP2010056139A (en) * 2008-08-26 2010-03-11 Toshiba Corp Multilayer semiconductor device
US8487444B2 (en) 2009-03-06 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional system-in-package architecture
JP5985136B2 (en) 2009-03-19 2016-09-06 ソニー株式会社 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
JP5773379B2 (en) * 2009-03-19 2015-09-02 ソニー株式会社 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
TWI366906B (en) * 2009-03-31 2012-06-21 Ind Tech Res Inst Die stacking structure and fabricating method thereof
JP5559773B2 (en) * 2009-04-17 2014-07-23 株式会社日立製作所 Manufacturing method of laminated semiconductor device
US8691664B2 (en) 2009-04-20 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Backside process for a substrate
US8400781B2 (en) 2009-09-02 2013-03-19 Mosaid Technologies Incorporated Using interrupted through-silicon-vias in integrated circuits adapted for stacking
US8384411B2 (en) * 2009-12-18 2013-02-26 Tektronix, Inc. Method and device for measuring inter-chip signals
KR101142338B1 (en) * 2010-06-17 2012-05-17 에스케이하이닉스 주식회사 Semiconductor chip and method for manufacturing of the same and stack package using the same
JP4902773B2 (en) * 2010-08-12 2012-03-21 有限会社 ナプラ Semiconductor device
JP2012156327A (en) 2011-01-26 2012-08-16 Elpida Memory Inc Semiconductor device and laminate semiconductor device
KR20140053175A (en) * 2011-08-11 2014-05-07 도쿄엘렉트론가부시키가이샤 Semiconductor device manufacturing method, semiconductor device, and jig for forming wiring
KR20130104728A (en) * 2012-03-15 2013-09-25 에스케이하이닉스 주식회사 Semiconductor chip and stacked semiconductor package having the same
KR20130113032A (en) * 2012-04-05 2013-10-15 에스케이하이닉스 주식회사 Semiconductor substrate, semiconductor chip having the same and stacked semiconductor package
JP5986499B2 (en) * 2012-12-21 2016-09-06 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP5836346B2 (en) * 2013-10-04 2015-12-24 有限会社 ナプラ Wiring board and electronic device
WO2015136821A1 (en) * 2014-03-12 2015-09-17 学校法人慶應義塾 Laminated semiconductor integrated circuit device
SG11201701725QA (en) * 2014-09-17 2017-04-27 Toshiba Kk Semiconductor device
EP3518285A4 (en) * 2016-09-23 2020-07-29 Toshiba Memory Corporation Memory device
EP3576151A4 (en) 2017-01-24 2020-06-03 Sony Semiconductor Solutions Corporation Semiconductor device, method for manufacturing same, solid-state image pickup element, and electronic apparatus
JP6680705B2 (en) 2017-02-10 2020-04-15 キオクシア株式会社 Semiconductor device and manufacturing method thereof
TW201838094A (en) 2017-02-16 2018-10-16 學校法人慶應義塾 Multilayer semiconductor integrated circuit device
US10181447B2 (en) 2017-04-21 2019-01-15 Invensas Corporation 3D-interconnect
JP2021068737A (en) * 2019-10-17 2021-04-30 本田技研工業株式会社 Semiconductor device
JP2024062874A (en) 2022-10-25 2024-05-10 株式会社アドバンテスト LAMINATED CHIP AND METHOD FOR MANUFACTURING LAMINATED CHIP

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JPS5394781A (en) * 1977-01-29 1978-08-19 Toshiba Corp Semiconductor integrated circuit device and its fabrication
KR100364635B1 (en) * 2001-02-09 2002-12-16 삼성전자 주식회사 Chip-Level Three-Dimensional Multi-Chip Package Having Chip Selection Pad Formed On Chip-Level And Making Method Therefor
JP2003060053A (en) * 2001-08-10 2003-02-28 Fujitsu Ltd Semiconductor chip, semiconductor integrated circuit device comprising it and method for selecting semiconductor chip

Also Published As

Publication number Publication date
TW200539242A (en) 2005-12-01
JP2007250561A (en) 2007-09-27
WO2005101475A1 (en) 2005-10-27

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Free format text: IN VOL 20, NO 43, PAGE(S) 4245 UNDER THE HEADING PCT APPLICATIONS THAT HAVE ENTERED THE NATIONAL PHASE - NAME INDEX DELETE ALL REFER- ENCE TO 2005234303.