AU2003301460A1 - Non-destructive analysis method for determining the quality of a solar cell, and application of the same - Google Patents

Non-destructive analysis method for determining the quality of a solar cell, and application of the same

Info

Publication number
AU2003301460A1
AU2003301460A1 AU2003301460A AU2003301460A AU2003301460A1 AU 2003301460 A1 AU2003301460 A1 AU 2003301460A1 AU 2003301460 A AU2003301460 A AU 2003301460A AU 2003301460 A AU2003301460 A AU 2003301460A AU 2003301460 A1 AU2003301460 A1 AU 2003301460A1
Authority
AU
Australia
Prior art keywords
solar cell
quality
determining
application
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003301460A
Other versions
AU2003301460A8 (en
Inventor
Ilka Luck
Eveline Rudigier
Roland Scheer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hahn Meitner Institut Berlin GmbH
Original Assignee
Hahn Meitner Institut Berlin GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hahn Meitner Institut Berlin GmbH filed Critical Hahn Meitner Institut Berlin GmbH
Publication of AU2003301460A1 publication Critical patent/AU2003301460A1/en
Publication of AU2003301460A8 publication Critical patent/AU2003301460A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering

Landscapes

  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Photovoltaic Devices (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A non-destructive analysis process to determine the condition of a solar cell comprises using Raman data to find the structural properties of the semiconductor layer and a current/voltage measure. FWHM data is obtained directly after the production of the absorbing layer and used to predict the electrical properties of the finished cell.
AU2003301460A 2002-10-13 2003-10-09 Non-destructive analysis method for determining the quality of a solar cell, and application of the same Abandoned AU2003301460A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10248504.6 2002-10-13
DE10248504A DE10248504B4 (en) 2002-10-13 2002-10-13 Non-destructive analysis method for determining the quality of a chalcopyrite-based solar cell
PCT/DE2003/003372 WO2004036656A2 (en) 2002-10-13 2003-10-09 Non-destructive analysis method for determining the quality of a solar cell, and application of the same

Publications (2)

Publication Number Publication Date
AU2003301460A1 true AU2003301460A1 (en) 2004-05-04
AU2003301460A8 AU2003301460A8 (en) 2004-05-04

Family

ID=32038739

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003301460A Abandoned AU2003301460A1 (en) 2002-10-13 2003-10-09 Non-destructive analysis method for determining the quality of a solar cell, and application of the same

Country Status (6)

Country Link
EP (1) EP1556900B1 (en)
AT (1) ATE430991T1 (en)
AU (1) AU2003301460A1 (en)
DE (2) DE10248504B4 (en)
ES (1) ES2325155T3 (en)
WO (1) WO2004036656A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5473187B2 (en) 2006-09-04 2014-04-16 三菱重工業株式会社 Film forming condition setting method, photoelectric conversion device manufacturing method and inspection method
DE102007007140B4 (en) 2007-02-09 2009-01-29 Astrium Gmbh Method and arrangement for detecting mechanical defects of a semiconductor device, in particular a solar cell or solar cell arrangement
DE102009024377B4 (en) 2009-06-09 2011-02-10 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Non-destructive analysis method for determining the quality of a thin-film solar cell by means of photoluminescence spectroscopy
CN111769050A (en) * 2020-07-03 2020-10-13 南通大学 Method for detecting efficiency of perovskite solar cell by using Raman spectrum
JP7420204B2 (en) * 2022-02-25 2024-01-23 株式会社プロテリアル Silicon nitride substrate evaluation method, evaluation device, and evaluation system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4217454B4 (en) * 1991-05-27 2004-09-30 Fuji Electric Corporate Research & Development Ltd., Yokosuka CuInSe-2 thin film solar cell and process for its manufacture
DE19827202A1 (en) * 1998-06-18 1999-12-23 Wacker Siltronic Halbleitermat Rapid and reliable nondestructive detection and characterization of crystal defects in single crystal semiconductor material, e.g. silicon rods or wafers
DE19840197A1 (en) * 1998-09-03 2000-03-09 Wacker Siltronic Halbleitermat Method to identify and characterize crystal defects in monocrystalline semiconductor material; involves testing sample of monocrystalline semiconductor material using micro-Raman spectroscopy

Also Published As

Publication number Publication date
DE10248504B4 (en) 2008-01-10
AU2003301460A8 (en) 2004-05-04
WO2004036656A2 (en) 2004-04-29
EP1556900B1 (en) 2009-05-06
ATE430991T1 (en) 2009-05-15
WO2004036656A3 (en) 2004-06-24
ES2325155T3 (en) 2009-08-27
DE10248504A1 (en) 2004-04-22
EP1556900A2 (en) 2005-07-27
DE50311501D1 (en) 2009-06-18

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase