AU2003288786A1 - Thin film type image sensor of high aperture ratio and a method for manufacturing thereof - Google Patents

Thin film type image sensor of high aperture ratio and a method for manufacturing thereof

Info

Publication number
AU2003288786A1
AU2003288786A1 AU2003288786A AU2003288786A AU2003288786A1 AU 2003288786 A1 AU2003288786 A1 AU 2003288786A1 AU 2003288786 A AU2003288786 A AU 2003288786A AU 2003288786 A AU2003288786 A AU 2003288786A AU 2003288786 A1 AU2003288786 A1 AU 2003288786A1
Authority
AU
Australia
Prior art keywords
manufacturing
thin film
image sensor
aperture ratio
type image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003288786A
Inventor
Jong Hoon Yi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICONIMAGEWORKS Inc
Original Assignee
SILICONIMAGEWORKS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICONIMAGEWORKS Inc filed Critical SILICONIMAGEWORKS Inc
Publication of AU2003288786A1 publication Critical patent/AU2003288786A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AU2003288786A 2003-02-10 2003-12-31 Thin film type image sensor of high aperture ratio and a method for manufacturing thereof Abandoned AU2003288786A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0008245 2003-02-10
KR1020030008245A KR20040072251A (en) 2003-02-10 2003-02-10 Thin film type image sensor of high aperture ratio and a method for manufacturing thereof
PCT/KR2003/002928 WO2004070843A1 (en) 2003-02-10 2003-12-31 Thin film type image sensor of high aperture ratio and a method for manufacturing thereof

Publications (1)

Publication Number Publication Date
AU2003288786A1 true AU2003288786A1 (en) 2004-08-30

Family

ID=32844804

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003288786A Abandoned AU2003288786A1 (en) 2003-02-10 2003-12-31 Thin film type image sensor of high aperture ratio and a method for manufacturing thereof

Country Status (3)

Country Link
KR (1) KR20040072251A (en)
AU (1) AU2003288786A1 (en)
WO (1) WO2004070843A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102496601B (en) * 2011-12-15 2014-02-05 华映视讯(吴江)有限公司 Pixel structure and manufacturing method thereof
CN110992873A (en) * 2019-12-30 2020-04-10 厦门天马微电子有限公司 Array substrate, display panel and display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271657A (en) * 1989-04-13 1990-11-06 Nec Corp Double active layer cmos inverter
JPH0792500A (en) * 1993-06-29 1995-04-07 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
WO2004070843A1 (en) 2004-08-19
KR20040072251A (en) 2004-08-18

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase