AU2003284911A1 - Optoelectronic circuits employing one or more heterojunction thyristor devices - Google Patents

Optoelectronic circuits employing one or more heterojunction thyristor devices

Info

Publication number
AU2003284911A1
AU2003284911A1 AU2003284911A AU2003284911A AU2003284911A1 AU 2003284911 A1 AU2003284911 A1 AU 2003284911A1 AU 2003284911 A AU2003284911 A AU 2003284911A AU 2003284911 A AU2003284911 A AU 2003284911A AU 2003284911 A1 AU2003284911 A1 AU 2003284911A1
Authority
AU
Australia
Prior art keywords
circuits employing
optoelectronic circuits
thyristor devices
heterojunction thyristor
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003284911A
Other languages
English (en)
Other versions
AU2003284911A8 (en
Inventor
Jianhong Cai
Geoff W. Taylor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CENTER FOR SCIENCE AND TECHNOLOGY COMMERCIALIZATION
Opel Inc
Original Assignee
CT FOR SCIENCE AND TECHNOLOGY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/280,892 external-priority patent/US6954473B2/en
Priority claimed from US10/323,413 external-priority patent/US6995407B2/en
Priority claimed from US10/323,388 external-priority patent/US6873273B2/en
Priority claimed from US10/323,389 external-priority patent/US7332752B2/en
Priority claimed from US10/323,390 external-priority patent/US6853014B2/en
Application filed by CT FOR SCIENCE AND TECHNOLOGY filed Critical CT FOR SCIENCE AND TECHNOLOGY
Publication of AU2003284911A8 publication Critical patent/AU2003284911A8/xx
Publication of AU2003284911A1 publication Critical patent/AU2003284911A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/667—Recirculation type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H03M1/80—Simultaneous conversion using weighted impedances
    • H03M1/808—Simultaneous conversion using weighted impedances using resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
AU2003284911A 2002-10-25 2003-10-23 Optoelectronic circuits employing one or more heterojunction thyristor devices Abandoned AU2003284911A1 (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US10/280,892 2002-10-25
US10/280,892 US6954473B2 (en) 2002-10-25 2002-10-25 Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay
US10/323,388 2002-12-19
US10/323,413 US6995407B2 (en) 2002-10-25 2002-12-19 Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices
US10/323,388 US6873273B2 (en) 2002-10-25 2002-12-19 Photonic serial digital-to-analog converter employing a heterojunction thyristor device
US10/323,389 US7332752B2 (en) 2002-10-25 2002-12-19 Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal
US10/323,413 2002-12-19
US10/323,389 2002-12-19
US10/323,390 2002-12-19
US10/323,390 US6853014B2 (en) 2002-10-25 2002-12-19 Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling
PCT/US2003/033813 WO2004038812A1 (fr) 2002-10-25 2003-10-23 Circuits optoelectroniques faisant appel a un ou plusieurs dispositifs de thyristors

Publications (2)

Publication Number Publication Date
AU2003284911A8 AU2003284911A8 (en) 2004-05-13
AU2003284911A1 true AU2003284911A1 (en) 2004-05-13

Family

ID=32180774

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003284911A Abandoned AU2003284911A1 (en) 2002-10-25 2003-10-23 Optoelectronic circuits employing one or more heterojunction thyristor devices

Country Status (2)

Country Link
AU (1) AU2003284911A1 (fr)
WO (1) WO2004038812A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7247892B2 (en) * 2000-04-24 2007-07-24 Taylor Geoff W Imaging array utilizing thyristor-based pixel elements
US7064697B2 (en) 2003-01-29 2006-06-20 The University Of Connecticut Photonic sigma delta analog-to-digital conversation employing dual heterojunction thyristors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4806997A (en) * 1985-06-14 1989-02-21 AT&T Laboratories American Telephone and Telegraph Company Double heterostructure optoelectronic switch
US5204871A (en) * 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor

Also Published As

Publication number Publication date
AU2003284911A8 (en) 2004-05-13
WO2004038812A1 (fr) 2004-05-06

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase