AU2003267389A1 - Automatically adjustable transistor and the production method thereof - Google Patents

Automatically adjustable transistor and the production method thereof

Info

Publication number
AU2003267389A1
AU2003267389A1 AU2003267389A AU2003267389A AU2003267389A1 AU 2003267389 A1 AU2003267389 A1 AU 2003267389A1 AU 2003267389 A AU2003267389 A AU 2003267389A AU 2003267389 A AU2003267389 A AU 2003267389A AU 2003267389 A1 AU2003267389 A1 AU 2003267389A1
Authority
AU
Australia
Prior art keywords
production method
automatically adjustable
adjustable transistor
transistor
automatically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003267389A
Inventor
Hubert Enichlmair
Jochen Kraft
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram AG
Original Assignee
Austriamicrosystems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems AG filed Critical Austriamicrosystems AG
Publication of AU2003267389A1 publication Critical patent/AU2003267389A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
AU2003267389A 2002-10-25 2003-09-18 Automatically adjustable transistor and the production method thereof Abandoned AU2003267389A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2002149897 DE10249897B4 (en) 2002-10-25 2002-10-25 Self-aligning process for producing a transistor
DE10249897.0 2002-10-25
PCT/EP2003/010430 WO2004038784A1 (en) 2002-10-25 2003-09-18 Automatically adjustable transistor and the production method thereof

Publications (1)

Publication Number Publication Date
AU2003267389A1 true AU2003267389A1 (en) 2004-05-13

Family

ID=32103043

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003267389A Abandoned AU2003267389A1 (en) 2002-10-25 2003-09-18 Automatically adjustable transistor and the production method thereof

Country Status (3)

Country Link
AU (1) AU2003267389A1 (en)
DE (1) DE10249897B4 (en)
WO (1) WO2004038784A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004054806A1 (en) * 2004-11-12 2006-05-24 Austriamicrosystems Ag Bipolar transistor has intrinsic base region with an electronically conductive silicide layer in close contact with base layer
DE102005013982A1 (en) * 2005-03-26 2006-10-05 Atmel Germany Gmbh A method of manufacturing a bipolar transistor and a bipolar transistor produced by such a method
DE102006014619A1 (en) * 2006-03-29 2007-06-21 Siemens Ag Plasterboard e.g. gypsum plasterboard, for construction of e.g. house, has base body made of gypsum, and electrically conducting structures, which are inserted into or affixed on body, where structures are metal wires or metal foil strips

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001533A (en) * 1988-12-22 1991-03-19 Kabushiki Kaisha Toshiba Bipolar transistor with side wall base contacts
US5101256A (en) * 1989-02-13 1992-03-31 International Business Machines Corporation Bipolar transistor with ultra-thin epitaxial base and method of fabricating same
US5235206A (en) * 1990-10-24 1993-08-10 International Business Machines Corporation Vertical bipolar transistor with recessed epitaxially grown intrinsic base region
JP2551364B2 (en) * 1993-11-26 1996-11-06 日本電気株式会社 Semiconductor device
US5866462A (en) * 1995-09-29 1999-02-02 Analog Devices, Incorporated Double-spacer technique for forming a bipolar transistor with a very narrow emitter
DE69729833T2 (en) * 1996-03-29 2005-07-07 Koninklijke Philips Electronics N.V. PREPARATION OF A SEMICONDUCTOR ASSEMBLY WITH AN EPITAXIAL SEMICONDUCTOR LAYER
US5773350A (en) * 1997-01-28 1998-06-30 National Semiconductor Corporation Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base
FR2790867B1 (en) * 1999-03-12 2001-11-16 St Microelectronics Sa BIPOLAR TRANSISTOR MANUFACTURING PROCESS
FR2795233B1 (en) * 1999-06-18 2001-08-24 St Microelectronics Sa SELF-ALIGNED MANUFACTURING PROCESS OF BIPOLAR TRANSISTORS
US6417058B1 (en) * 2000-06-14 2002-07-09 Sony Corporation SiGe/poly for low resistance extrinsic base npn transistor

Also Published As

Publication number Publication date
DE10249897B4 (en) 2005-09-22
WO2004038784A1 (en) 2004-05-06
DE10249897A1 (en) 2004-05-13

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase