AU2003261803A1 - Light emitting element and process for producing the same - Google Patents

Light emitting element and process for producing the same

Info

Publication number
AU2003261803A1
AU2003261803A1 AU2003261803A AU2003261803A AU2003261803A1 AU 2003261803 A1 AU2003261803 A1 AU 2003261803A1 AU 2003261803 A AU2003261803 A AU 2003261803A AU 2003261803 A AU2003261803 A AU 2003261803A AU 2003261803 A1 AU2003261803 A1 AU 2003261803A1
Authority
AU
Australia
Prior art keywords
producing
light emitting
same
emitting element
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003261803A
Inventor
Shucheng Chu
Hirofumi Kan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of AU2003261803A1 publication Critical patent/AU2003261803A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU2003261803A 2002-08-30 2003-08-28 Light emitting element and process for producing the same Abandoned AU2003261803A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-255007 2002-08-30
JP2002255007A JP4142374B2 (en) 2002-08-30 2002-08-30 Light emitting element
PCT/JP2003/010961 WO2004021458A1 (en) 2002-08-30 2003-08-28 Light emitting element and process for producing the same

Publications (1)

Publication Number Publication Date
AU2003261803A1 true AU2003261803A1 (en) 2004-03-19

Family

ID=31972862

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003261803A Abandoned AU2003261803A1 (en) 2002-08-30 2003-08-28 Light emitting element and process for producing the same

Country Status (4)

Country Link
JP (1) JP4142374B2 (en)
CN (1) CN100364118C (en)
AU (1) AU2003261803A1 (en)
WO (1) WO2004021458A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312734C (en) * 2005-01-28 2007-04-25 华中科技大学 Method for preparing beta-FeSi2 semiconductor film by femtosecond pulsed laser
JP4920343B2 (en) 2006-08-24 2012-04-18 浜松ホトニクス株式会社 Semiconductor element
JP5687606B2 (en) * 2011-11-14 2015-03-18 トヨタ自動車株式会社 Solar-heat conversion member, solar-heat conversion device, and solar power generation device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3992117B2 (en) * 1996-07-18 2007-10-17 昭和電工株式会社 GaP light emitting device substrate
GB2318680B (en) * 1996-10-24 2001-11-07 Univ Surrey Optoelectronic semiconductor devices
JP2001064099A (en) * 1999-08-26 2001-03-13 Matsushita Electronics Industry Corp Thin film formation
JP3401594B2 (en) * 1999-09-29 2003-04-28 独立行政法人産業技術総合研究所 Semiconductor device and manufacturing method thereof
JP2001127338A (en) * 1999-10-29 2001-05-11 Matsushita Electronics Industry Corp Semiconductor device and its manufacturing method
JP2001244199A (en) * 2000-03-01 2001-09-07 Matsushita Electric Ind Co Ltd METHOD OF FORMING beta-IRON SILICIDE LAYER
JP4080822B2 (en) * 2002-08-27 2008-04-23 浜松ホトニクス株式会社 Method for producing β-FeSi2 film

Also Published As

Publication number Publication date
WO2004021458A1 (en) 2004-03-11
JP2004095858A (en) 2004-03-25
JP4142374B2 (en) 2008-09-03
CN100364118C (en) 2008-01-23
CN1679175A (en) 2005-10-05

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase